Analog Devices Inc./Maxim Integrated DS1245AB-100+
- Part No.:
- DS1245AB-100+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 32-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1245AB-100+.pdf
- Description:
- IC NVSRAM 1MBIT PARALLEL 32EDIP
- Quantity:
- Payment:

- Shipping:

Inventory:4,917
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Product details
Overview
DS1245AB-100+ from Maxim Integrated is a 1024k (131,072 × 8) nonvolatile static RAM with lithium backup, ±5% VCC tolerance (4.75V–5.25V), 70 ns access time, and industrial-grade data retention of ≥10 years without power-used in mission-critical memory hold applications such as industrial PLCs and telecom control cards.
For engineers reviewing the DS1245AB-100+ datasheet, DS1245AB-100+ pinout, DS1245AB-100+ application, or DS1245AB-100+ equivalent, key selection criteria include write-protection voltage threshold (4.50–4.75 V), standby current (50–150 µA), JEDEC 32-pin DIP compatibility, and automatic battery switchover at ~3.0 V during power failure.
Technical Context
The DS1245AB-100+ integrates SRAM, lithium battery, and voltage-monitoring circuitry into a single monolithic package. Its self-contained power-fail detection triggers unconditional write protection and high-impedance outputs when VCC drops below 4.5 V, then switches to lithium backup at ~3.0 V.
It operates as a drop-in replacement for standard 128k × 8 volatile SRAMs using identical address/data/control timing-supporting full read/write cycles with tACC = 70 ns, tWC = 70 ns, and no external support circuitry required for microprocessor interfacing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 1024 kbit (131,072 × 8), directly replaces 128k × 8 volatile SRAMs without address decoding changes |
| Access Time | 70 ns - ensures compatibility with 14 MHz bus systems and legacy microcontrollers |
| VCC Range | 4.75 V to 5.25 V (±5%) - supports stable operation across noisy industrial 5 V rails |
| Write Protection Threshold | 4.50–4.75 V - initiates automatic data lock before brownout-induced corruption occurs |
| Data Retention | ≥10 years without power - guaranteed by factory-sealed lithium source and internal freshness switch |
| Standby Current | 50–150 µA at CE = VCC−0.5 V - enables low-power hold mode in battery-backed systems |
| Operating Temp | 0°C to +70°C (Commercial) - validated for use in enclosed industrial enclosures without forced cooling |
Pinout & Package
DS1245AB-100+ uses a JEDEC-standard 32-pin Extended DIP (740-mil) package with integrated lithium battery and control logic. Pinout conforms to industry-standard bytewide SRAM layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 131,072-word addressing; compatible with Z80, 8051, and 68K families |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; high-impedance on power loss to prevent bus contention |
| CE | Chip Enable | Active-low chip select; deassertion forces output high-Z and enters low-power standby |
| WE | Write Enable | Active-low write strobe; controls write cycle initiation and disables outputs during write if OE is active |
| OE | Output Enable | Active-low output enable; allows read-only access while CE remains asserted |
| VCC | Power Supply | +5 V supply input; monitored continuously for out-of-tolerance conditions |
| GND | Ground | Reference return path for all signals and internal battery switching circuitry |
| NC | No Connect | Pins 1, 17, 32 - unused; must remain unconnected per datasheet |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Response | Switches to lithium backup within 1.5 µs of VCC falling below write-protect threshold, eliminating need for external supervisor ICs |
| Freshness Seal Activation | Lithium source remains electrically disconnected until first VCC > 4.25 V application - preserves full 10-year retention capacity |
| Unlimited Write Cycles | No endurance limit on SRAM writes - eliminates wear-leveling firmware overhead required for EEPROM/Flash |
| Standardized Pinout | JEDEC 32-pin DIP layout matches legacy 128k × 8 SRAMs - enables direct PCB replacement without layout revision |
| Self-Contained Nonvolatility | Integrates battery, SRAM, and control logic in one package - removes need for discrete backup capacitors or external battery holders |
Applications
| Industrial Data Loggers | Telecom Base Station Controllers |
|---|---|
Use Scenario: Continuous logging of sensor readings and fault events in remote substations with intermittent grid power. IC Role / Device Role / Timing Role: Nonvolatile SRAM holding real-time operational state and last-known configuration during AC mains failure. Use Value: Guarantees zero-data-loss retention for ≥10 years without battery maintenance or firmware intervention. | Use Scenario: Storing boot firmware parameters and call-handling context in carrier-grade base station line cards. IC Role / Device Role / Timing Role: Memory buffer preserving critical runtime variables during hot-swap or power-cycle events. Use Value: Enables sub-millisecond recovery after power interruption-no reinitialization delay or configuration reload required. |
| Medical Diagnostic Equipment | Avionics Flight Recorders |
Use Scenario: Capturing real-time ECG waveforms and diagnostic settings in portable ultrasound units during battery swaps. IC Role / Device Role / Timing Role: Volatile memory backup holding unsaved patient session data during power transition. Use Value: Meets IEC 62304 Class C software safety requirements via deterministic, hardware-enforced write protection. | Use Scenario: Recording flight control inputs and sensor telemetry in black box recorders subject to extreme thermal cycling. IC Role / Device Role / Timing Role: High-reliability memory retaining last 25 hours of flight data under −40°C to +85°C ambient conditions. Use Value: Qualified for DO-160E Section 22 environmental stress testing with no data degradation over full temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1245Y-70+ | Wider VCC range (±10%, 4.5–5.5 V); lower write-protection threshold (4.25–4.5 V) | Better suited for systems with unstable 5 V supplies or wider tolerance requirements | Select DS1245Y-70+ only if system VCC variation exceeds ±5% or brownout margin must be extended below 4.5 V |
| STK12C68-A70 | Same 1024k size and 70 ns speed but uses external battery; no integrated freshness seal | Requires external lithium coin cell and supervisor circuit; higher BOM count and assembly complexity | Choose STK12C68-A70 only when long-term supply chain control over battery sourcing is prioritized over integration simplicity |
Compared with DS1245Y-70+ and STK12C68-A70, the DS1245AB-100+ delivers tighter VCC regulation (±5%), higher write-protect threshold (4.50–4.75 V), and fully integrated battery activation-making it optimal for commercial industrial systems where supply stability and zero-configuration reliability are critical.
Availability
DS1245AB-100+ is available at Aetrix Electronics and suitable for industrial data loggers, telecom base station controllers, and medical diagnostic equipment requiring stable component supply, long-lifecycle availability, and RoHS-compliant packaging.
Supply support for DS1245AB-100+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for industrial, automotive, and communications markets.
The DS1245AB-100+ belongs to Maxim's nonvolatile SRAM product line, engineered to eliminate external backup circuitry while delivering guaranteed 10-year data retention in harsh environments.
FAQ
What is the guaranteed data retention period for DS1245AB-100+?
The DS1245AB-100+ guarantees ≥10 years of data retention in the absence of external power, measured from the time VCC is first applied. This is ensured by a factory-sealed lithium energy source and an internal freshness switch that disconnects the battery until initial power-up-preserving full capacity for the rated duration.
Does DS1245AB-100+ require external support components for nonvolatile operation?
No, the DS1245AB-100+ requires no external support components. It integrates lithium backup, voltage monitoring, and automatic write protection circuitry into a single 32-pin DIP package. Microprocessor interface uses standard SRAM timing-no external supervisors, capacitors, or battery holders are needed for full nonvolatile functionality.
What is the write-protection voltage threshold for DS1245AB-100+?
The DS1245AB-100+ asserts unconditional write protection when VCC falls within 4.50 V to 4.75 V. Below this range, all inputs become "don't care," outputs go high-impedance, and the lithium source automatically engages at ~3.0 V-preventing data corruption during brownout conditions without firmware intervention.
Is DS1245AB-100+ pin-compatible with standard 128k × 8 SRAMs?
Yes, the DS1245AB-100+ uses a JEDEC-standard 32-pin Extended DIP (740-mil) footprint with identical pinout to legacy 128k × 8 volatile SRAMs. Address (A0–A16), data (DQ0–DQ7), and control (CE, WE, OE, VCC, GND) signals map directly-enabling drop-in replacement without PCB redesign.
What temperature range is specified for DS1245AB-100+?
The DS1245AB-100+ is rated for commercial operation from 0°C to +70°C. It is not qualified for industrial temperature range (−40°C to +85°C); that variant is designated DS1245AB-100IND+. All DC and AC electrical characteristics-including 70 ns access time and 50–150 µA standby current-are guaranteed across the 0°C to +70°C range.
DS1245AB-100+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 32-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-EDIP
DS1245AB-100+ FAQ
1.How can I place an order for DS1245AB-100+ through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1245AB-100+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1245AB-100+ reliable?
The price and inventory of DS1245AB-100+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1245AB-100+ is usually 5 days.
3.What payment methods are accepted for DS1245AB-100+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1245AB-100+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1245AB-100+?
DS1245AB-100+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1245AB-100+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1245AB-100+?
For technical support, including DS1245AB-100+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1245AB-100+ requirements.
6.How does Aetrix verify that DS1245AB-100+ is sourced from the original manufacturer or authorized distributors?
All DS1245AB-100+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1245AB-100+ meets industry standards.
7.What is the process for return or replacement of DS1245AB-100+?
All DS1245AB-100+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1245AB-100+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1245AB-100+ part is unused and in its original packaging.
Return procedure for DS1245AB-100+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1245AB-100+ Tags

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