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Analog Devices Inc./Maxim Integrated DS1245AB-120IND

Part No.:
DS1245AB-120IND
Manufacturer:
Analog Devices Inc./Maxim Integrated
Category:
Memory
Package:
32-DIP Module (0.600", 15.24mm)
Datasheet:
AetrixDS1245AB-120IND.pdf
Description:
IC NVSRAM 1MBIT PARALLEL 32EDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,848

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Product details

Overview

DS1245AB-120IND from Maxim Integrated is a 1024k (131,072 × 8) nonvolatile static RAM with lithium backup, ±5% VCC tolerance (4.75–5.25 V), 70 ns access time, and industrial temperature range (–40°C to +85°C). It replaces volatile SRAM, EEPROM, or Flash in battery-backed data logging, configuration storage, and real-time clock memory applications.

For engineers reviewing the DS1245AB-120IND datasheet, DS1245AB-120IND pinout, DS1245AB-120IND application, or DS1245AB-120IND equivalent, key selection criteria include write-protection voltage (4.50–4.75 V), data retention (10 years without power), JEDEC 32-pin DIP compatibility, and automatic power-fail detection with seamless lithium switchover.

Technical Context

The DS1245AB-120IND integrates self-contained lithium energy source and voltage-monitoring circuitry that triggers unconditional write protection when VCC drops below 4.5 V and switches to battery power below ~3.0 V. It operates as a fully static, byte-wide parallel memory with no external support circuitry required.

Its read/write timing conforms to standard SRAM protocols: CE and OE low with WE high for reads; CE and WE low for writes. Address inputs A0–A16 select one of 131,072 locations; DQ0–DQ7 provide bidirectional 8-bit data transfer with 2.0 mA IOL, 1.0 mA IOH, and 5–10 pF pin capacitance.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size1024 kbit (131,072 × 8), directly replaces 128k × 8 volatile SRAMs
Access Time70 ns - ensures compatibility with 14 MHz bus systems without wait states
VCC Range4.75 V to 5.25 V (±5%) - supports stable operation across industrial-grade 5 V rails
Data Retention10 years without power - guaranteed by sealed lithium cell and freshness seal activation on first power-up
Write Protection Threshold4.50–4.75 V - initiates automatic write-disable before VCC reaches critical failure level
Operating Temperature–40°C to +85°C - qualified for industrial control, automotive body electronics, and outdoor metering
Package32-pin JEDEC-standard 740-mil Extended DIP - drop-in compatible with legacy 32-pin socket footprints

Pinout & Package

DS1245AB-120IND uses a 32-pin JEDEC-standard 740-mil Extended Dual In-line Package (EDIP), wave- or hand-solderable only. The package integrates SRAM, lithium battery, and control logic into a single monolithic unit.

Pin/TerminalCircuit RoleDesign Meaning
A0–A16Address Inputs17-bit address bus supporting full 131,072-word addressing
DQ0–DQ7Data I/OBidirectional 8-bit data bus with TTL-compatible levels and 2.0 mA sink capability
CEChip EnableActive-low chip select; disables outputs and reduces standby current to ≤600 µA when high
WEWrite EnableActive-low write strobe; controls write cycle initiation and output disable during writes
OEOutput EnableActive-low output enable; places DQ lines in high-impedance state when inactive (high)
VCCPower Supply+5 V supply input with ±5% tolerance; powers SRAM and monitoring circuitry
GNDGroundReference return path for all signals and internal battery switching
NCNo ConnectPins 1, 2, 3, 33, 34 - electrically isolated; no internal connection

Key Features

FeatureDesign Value
Automatic Power-Fail DetectionMonitors VCC continuously; triggers write protection and lithium switchover within 1.5 µs of out-of-tolerance condition
Freshness Seal ActivationLithium cell remains electrically disconnected until first VCC > 4.25 V applied - preserves full 10-year retention capacity
Unlimited Write CyclesNo endurance limit - enables continuous logging or frequent configuration updates without wear-out concerns
Low-Power CMOS OperationStandby current as low as 50 µA (CE = VCC–0.5 V) - suitable for battery-powered backup systems
Standardized PinoutJEDEC 32-pin DIP footprint matches industry-standard SRAM layouts - zero PCB redesign required

Applications

Industrial Data LoggerEmbedded Configuration Storage

Use Scenario: Continuous recording of sensor readings in remote environmental monitoring stations with intermittent mains power.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing timestamped measurements during AC loss; retains data across multi-year deployments.

Use Value: Eliminates need for external EEPROM write-cycle management or Flash erase delays - enables microsecond write latency and infinite update cycles.

Use Scenario: Storing calibration coefficients, network settings, and user preferences in programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: Byte-accessible configuration memory mapped directly to microcontroller address space; survives firmware updates and cold resets.

Use Value: Guarantees parameter integrity during brownouts - prevents factory reset or corrupted startup due to partial writes.

Real-Time Clock (RTC) Backup MemoryMedical Device Event Log

Use Scenario: Supporting RTC modules in diagnostic imaging equipment requiring persistent timekeeping during extended maintenance shutdowns.

IC Role / Device Role / Timing Role: Dedicated memory bank backing RTC registers and alarm settings; powered exclusively by integrated lithium during main power loss.

Use Value: Maintains accurate time stamping for audit trails without external battery holders or soldered coin cells - simplifies regulatory compliance and field servicing.

Use Scenario: Capturing fault codes, operator actions, and therapy delivery events in infusion pumps and ventilators.

IC Role / Device Role / Timing Role: Critical event buffer retaining last 10,000+ entries even after sudden power interruption or emergency shutdown.

Use Value: Meets IEC 62304 software safety requirements for Class C devices - ensures forensic traceability for adverse event investigations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DS1245Y-70IND+Wider VCC tolerance (±10%, 4.5–5.5 V); lower write-protection threshold (4.25–4.5 V)Better suited for unstable 5 V supplies with higher ripple or aging regulatorsSelect DS1245Y-70IND+ if system VCC varies beyond ±5%; otherwise DS1245AB-120IND offers tighter regulation margin.
STK12C68-70ISame 1024k size and 70 ns speed but uses external battery; no integrated lithium or freshness sealRequires discrete battery holder, charging circuit, and voltage monitor - increases BOM count and layout areaChoose STK12C68-70I only when long-term supply chain control over battery sourcing is required or when reworkability of backup power is mandatory.

Compared with DS1245Y-70IND+, the DS1245AB-120IND provides stricter VCC regulation for noise-sensitive systems; compared with STK12C68-70I, it delivers turnkey reliability with zero external components - reducing design validation effort and field failure risk.

Availability

DS1245AB-120IND is available at Aetrix Electronics and suitable for industrial data loggers, embedded configuration storage, and medical device event logs requiring stable component supply, long-lifecycle availability, and RoHS-compliant packaging.

Supply support for DS1245AB-120IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications applications.

The DS1245AB-120IND belongs to Maxim's nonvolatile SRAM product line, engineered specifically for systems demanding guaranteed data retention during unpredictable power loss - targeting instrumentation, medical, and infrastructure equipment.

FAQ

What is the guaranteed data retention period for the DS1245AB-120IND?

The DS1245AB-120IND guarantees 10 years of data retention in the absence of external power, measured cumulatively from the moment VCC is first applied above 4.25 V. This is ensured by an integrated lithium cell activated via a freshness seal, with no degradation from shelf storage prior to use.

Does the DS1245AB-120IND require external support circuitry for battery backup operation?

No, the DS1245AB-120IND requires no external support circuitry. Its integrated lithium energy source, voltage monitor, and power-switching logic operate autonomously. The device automatically disables writes and switches to battery power when VCC falls below 4.5 V, eliminating the need for external supervisors or backup controllers.

Can the DS1245AB-120IND be used as a direct replacement for standard 128k × 8 SRAMs?

Yes, the DS1245AB-120IND uses a JEDEC-standard 32-pin DIP footprint and identical pinout to conventional 128k × 8 SRAMs. It accepts the same address, data, and control signals (A0–A16, DQ0–DQ7, CE, WE, OE), enabling drop-in replacement without PCB or firmware changes.

What is the operating voltage range specified for the DS1245AB-120IND?

The DS1245AB-120IND operates over a VCC range of 4.75 V to 5.25 V (±5%), with full functionality including read/write access and automatic write protection active across this entire range. Below 4.5 V, write protection engages; below ~3.0 V, lithium backup powers the SRAM.

Is the DS1245AB-120IND compatible with surface-mount assembly processes?

No, the DS1245AB-120IND uses a 32-pin Extended DIP package intended for through-hole mounting only (wave or hand soldering). For surface-mount applications, the DS1245ABP-70IND+ PowerCap Module variant must be used with a separate DS9034PC+ PowerCap.

DS1245AB-120IND Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc./Maxim Integrated
Series:
-
Package/Case:
32-DIP Module (0.600", 15.24mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
120ns
Access Time:
120 ns
Voltage - Supply:
4.75V ~ 5.25V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
32-EDIP

DS1245AB-120IND FAQ

1.How can I place an order for DS1245AB-120IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1245AB-120IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1245AB-120IND reliable?

The price and inventory of DS1245AB-120IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1245AB-120IND is usually 5 days.

3.What payment methods are accepted for DS1245AB-120IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1245AB-120IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1245AB-120IND?

DS1245AB-120IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1245AB-120IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1245AB-120IND?

For technical support, including DS1245AB-120IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1245AB-120IND requirements.

6.How does Aetrix verify that DS1245AB-120IND is sourced from the original manufacturer or authorized distributors?

All DS1245AB-120IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1245AB-120IND meets industry standards.

7.What is the process for return or replacement of DS1245AB-120IND?

All DS1245AB-120IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1245AB-120IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1245AB-120IND part is unused and in its original packaging.

Return procedure for DS1245AB-120IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DS1245AB-120IND Tags

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