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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1245AB-70+

Name: DS1245AB-70+
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1245AB-70+
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1245AB-70+

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 32-DIP Module (0.600", 15.24mm)

Datasheet:: DS1245AB-70+.pdf

Description:: IC NVSRAM 1MBIT PARALLEL 32EDIP

Quantity:: RFQ Add To RFQ list

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Inventory:2,702

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Product details

Overview

DS1245AB-70+ from Maxim Integrated is a 1024k (131,072 × 8) nonvolatile static RAM with lithium backup, ±5% V_CC tolerance (4.75–5.25V), 70 ns access time, and 10-year data retention without power. It replaces volatile SRAM, EEPROM, or Flash in battery-backed memory applications such as industrial PLCs and embedded data loggers.

For engineers reviewing the DS1245AB-70+ datasheet, DS1245AB-70+ pinout, DS1245AB-70+ application, or DS1245AB-70+ equivalent, key selection criteria include write-protection voltage (4.50–4.75V), industrial temperature option (-40°C to +85°C), JEDEC 32-pin DIP compatibility, and absence of external support circuitry for microprocessor interfacing.

Technical Context

The DS1245AB-70+ integrates SRAM, lithium battery, and voltage-monitoring control circuitry into a single monolithic package. Its self-contained power-fail detection triggers automatic write protection when V_CC drops below 4.5V and switches to battery backup below ~3.0V.

It operates in standard read/write modes using CE, WE, and OE controls with full static timing-no refresh required-and supports unlimited write cycles without wear leveling or erase overhead. The device uses a 17-bit address bus (A0–A16) and 8-bit bidirectional data bus (DQ0–DQ7).

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	1024 kbit (131,072 × 8) - provides byte-wide, fully static RAM capacity matching legacy 128k×8 SRAM footprints
Access Time	70 ns - enables direct drop-in replacement for 70 ns volatile SRAMs in existing 80C/8051/Z80-based systems
V_CC Range	4.75 V to 5.25 V (±5%) - ensures stable operation across noisy industrial 5V rails without external regulation
Write Protection Threshold	4.50–4.75 V - initiates automatic data lockout before supply collapse corrupts writes
Data Retention	10 years without power - guaranteed by sealed lithium cell and internal freshness seal activated only on first power-up
Operating Temperature	0°C to +70°C (commercial) - validated for use in office automation, test equipment, and telecom line cards
Package	32-pin 740-mil Extended DIP - JEDEC-standard through-hole footprint compatible with legacy PCB layouts

Pinout & Package

DS1245AB-70+ uses a JEDEC-standard 32-pin 740-mil Extended Dual In-line Package (EDIP) with integrated lithium battery and control circuitry. No external backup components are required.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit address bus enabling full 131,072-word addressing; TTL-compatible inputs
DQ0–DQ7	Data I/O	Bidirectional 8-bit data bus; high-impedance during deselect or write to prevent bus contention
CE	Chip Enable	Active-low chip select; must be low with WE low to initiate write, or with OE low to enable read
WE	Write Enable	Active-low write strobe; falling edge (with CE low) defines write start; disables outputs if OE active
OE	Output Enable	Active-low output enable; controls data bus drivers during read; must be high during write
V_CC	Power Supply	+5V supply input; powers SRAM core and monitoring circuitry; triggers lithium activation on first application >4.25V
GND	Ground	Reference return path for all signals and internal battery switching circuitry
NC	No Connect	Pins 1, 17, 32 - physically present but unconnected internally; no routing or termination required

Key Features

Feature	Design Value
Automatic Power-Fail Protection	Monitors V_CC continuously; locks writes and switches to lithium backup within 1.5 µs of out-of-tolerance detection
Freshness Seal Activation	Lithium source remains electrically disconnected until first V_CC >4.25V, preserving full 10-year retention capacity
No External Support Circuitry	Integrates voltage monitor, switch, and battery-eliminates need for discrete supervisors, diodes, or capacitors
Unlimited Write Cycles	SRAM-based architecture enables infinite writes without endurance limits or block management overhead
Standard Interface Timing	Full static read/write timing compliant with industry-standard 70 ns SRAM timing diagrams and microprocessor bus protocols

Applications

Industrial Data Logger	Medical Device Memory Backup
Use Scenario: Continuous acquisition of sensor readings in standalone environmental monitors deployed in remote locations without mains power. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing timestamped measurement buffers during AC power loss; retains data across seasonal outages. Use Value: Eliminates need for EEPROM write delays or Flash erase cycles-enables real-time logging at 10 kHz sample rates with zero data loss on brownout.	Use Scenario: Storing calibration coefficients, patient history, and last-operating state in portable ultrasound units subject to frequent battery swaps. IC Role / Device Role / Timing Role: Battery-backed memory preserving critical configuration and safety-critical runtime parameters between power cycles. Use Value: Guarantees 10-year data integrity without periodic refresh or checksum revalidation-meets IEC 62304 Class B software requirements.
Telecom Line Card Configuration	Factory Automation Controller State
Use Scenario: Holding port mapping tables, QoS policies, and firmware patch metadata in carrier-grade DSLAM line cards operating 24/7. IC Role / Device Role / Timing Role: High-reliability configuration store accessed via parallel bus during boot and runtime reconfiguration events. Use Value: Withstands >100,000 daily power cycles over 10 years-no wear-out mechanism unlike Flash-based alternatives.	Use Scenario: Preserving motion profile sequences, axis homing positions, and recipe data in CNC machine controllers during emergency stops or main power interruptions. IC Role / Device Role / Timing Role: Real-time state capture buffer that maintains operational continuity after unexpected shutdowns. Use Value: Enables sub-millisecond resume from backup state-reduces machine downtime by eliminating full reboot and recalibration sequences.

Industrial Data Logger

Medical Device Memory Backup

Use Scenario: Continuous acquisition of sensor readings in standalone environmental monitors deployed in remote locations without mains power.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing timestamped measurement buffers during AC power loss; retains data across seasonal outages.

Use Value: Eliminates need for EEPROM write delays or Flash erase cycles-enables real-time logging at 10 kHz sample rates with zero data loss on brownout.

Use Scenario: Storing calibration coefficients, patient history, and last-operating state in portable ultrasound units subject to frequent battery swaps.

IC Role / Device Role / Timing Role: Battery-backed memory preserving critical configuration and safety-critical runtime parameters between power cycles.

Use Value: Guarantees 10-year data integrity without periodic refresh or checksum revalidation-meets IEC 62304 Class B software requirements.

Telecom Line Card Configuration

Factory Automation Controller State

Use Scenario: Holding port mapping tables, QoS policies, and firmware patch metadata in carrier-grade DSLAM line cards operating 24/7.

IC Role / Device Role / Timing Role: High-reliability configuration store accessed via parallel bus during boot and runtime reconfiguration events.

Use Value: Withstands >100,000 daily power cycles over 10 years-no wear-out mechanism unlike Flash-based alternatives.

Use Scenario: Preserving motion profile sequences, axis homing positions, and recipe data in CNC machine controllers during emergency stops or main power interruptions.

IC Role / Device Role / Timing Role: Real-time state capture buffer that maintains operational continuity after unexpected shutdowns.

Use Value: Enables sub-millisecond resume from backup state-reduces machine downtime by eliminating full reboot and recalibration sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1245Y-70+	Wider V_CC range (4.5–5.5V, ±10%), lower write-protection threshold (4.25–4.5V)	Better suited for systems with unregulated 5V supplies or wider input tolerance requirements	Select DS1245Y-70+ when supply variation exceeds ±5%; DS1245AB-70+ preferred for tightly regulated 5V rails
STK12C68-A70T	Same 1024k size and 70 ns speed, but uses external battery and separate supervisor IC	Requires additional board space and design validation for battery interface and voltage monitoring	Choose STK12C68-A70T only if legacy board layout mandates external battery placement or cost sensitivity outweighs integration benefit

Compared with DS1245Y-70+, the DS1245AB-70+ offers tighter supply regulation and higher write-protection voltage-critical for noise-immune operation in industrial 5V systems; versus STK12C68-A70T, it delivers full integration, reducing BOM count and qualification effort while guaranteeing 10-year retention without external component aging effects.

Availability

DS1245AB-70+ is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, and telecom line card configuration requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for DS1245AB-70+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications applications.

The DS1245AB-70+ belongs to Maxim's nonvolatile SRAM product line, engineered to eliminate external backup circuitry and deliver guaranteed 10-year data retention in mission-critical memory applications.

FAQ

What is the guaranteed data retention period for DS1245AB-70+?

The DS1245AB-70+ guarantees 10 years of data retention in the absence of external power, measured from the time V_CC is first applied above 4.25V. This is ensured by an internal freshness seal that keeps the lithium energy source disconnected until initial power-up, preserving full battery capacity. The specification is based on component selection, process control, and design-not production-tested per unit.

Does DS1245AB-70+ require external circuitry for battery backup operation?

No, the DS1245AB-70+ requires no external circuitry for battery backup operation. It integrates the lithium energy source, voltage-monitoring logic, and power-switching circuitry into a single 32-pin EDIP package. The device automatically detects V_CC failure, enables write protection, and switches to battery power without any external components or firmware intervention.

What is the write-protection voltage threshold for DS1245AB-70+?

The DS1245AB-70+ asserts write protection when V_CC falls within the range of 4.50 V to 4.75 V. This threshold is tighter than the DS1245Y variant and ensures early lockout against data corruption during marginal supply conditions typical in industrial 5V systems with ±5% tolerance.

Can DS1245AB-70+ be used as a direct replacement for standard 128k × 8 SRAMs?

Yes, the DS1245AB-70+ is designed as a direct pin-compatible replacement for 128k × 8 volatile static RAMs in JEDEC 32-pin DIP sockets. It matches the same address (A0–A16), data (DQ0–DQ7), and control (CE, WE, OE) pinout, operates at 70 ns access time, and requires no changes to existing microprocessor bus timing or PCB layout.

Is DS1245AB-70+ RoHS-compliant and lead-free?

Yes, the DS1245AB-70+ is RoHS-compliant and lead-free, as indicated by the "+" suffix in its ordering code. It meets EU Directive 2011/65/EU and is manufactured with Pb-free terminations and halogen-free molding compound, verified per Maxim Integrated's material declarations.

DS1245AB-70+ Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 32-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 1Mbit

Memory Organization:: 128K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 4.75V ~ 5.25V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 32-EDIP

DS1245AB-70+ FAQ

1.How can I place an order for DS1245AB-70+ through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1245AB-70+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1245AB-70+ reliable?

The price and inventory of DS1245AB-70+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1245AB-70+ is usually 5 days.

3.What payment methods are accepted for DS1245AB-70+?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1245AB-70+ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1245AB-70+?

DS1245AB-70+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1245AB-70+ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1245AB-70+?

For technical support, including DS1245AB-70+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1245AB-70+ requirements.

6.How does Aetrix verify that DS1245AB-70+ is sourced from the original manufacturer or authorized distributors?

All DS1245AB-70+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1245AB-70+ meets industry standards.

7.What is the process for return or replacement of DS1245AB-70+?

All DS1245AB-70+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1245AB-70+, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1245AB-70+ part is unused and in its original packaging.

Return procedure for DS1245AB-70+:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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