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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1245AB-70

Name: DS1245AB-70
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1245AB-70
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1245AB-70

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 32-DIP Module (0.600", 15.24mm)

Datasheet:: DS1245AB-70.pdf

Description:: IC NVSRAM 1MBIT PARALLEL 32EDIP

Quantity:: RFQ Add To RFQ list

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Inventory:2,413

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Product details

Overview

DS1245AB-70 from Maxim Integrated is a 1024k (131,072 × 8) nonvolatile static RAM with lithium backup, ±5% V_CC tolerance (4.75–5.25 V), 70 ns access time, and industrial temperature rating (–40°C to +85°C). It replaces volatile SRAM, EEPROM, or Flash in battery-backed memory systems requiring data retention during power loss.

For engineers reviewing the DS1245AB-70 datasheet, DS1245AB-70 pinout, DS1245AB-70 application, or DS1245AB-70 equivalent, this page delivers verified timing behavior, write-protection thresholds, PowerCap Module compatibility, and JEDEC-standard DIP package integration for embedded data logging, configuration storage, and real-time clock backup.

Technical Context

The DS1245AB-70 integrates self-contained lithium energy source and voltage-monitoring circuitry that triggers automatic write protection when V_CC drops below 4.50 V and switches to battery power below ~3.0 V. Its fully static architecture requires no refresh cycles and supports unlimited write endurance.

It operates in standard asynchronous SRAM mode with independent CE/OE/WE controls, full 17-bit address decoding (A0–A16), and eight bidirectional data lines (DQ0–DQ7). The device maintains high-impedance outputs and "don't care" inputs during power-down, ensuring system-level data integrity without external supervision.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	1024 kbit (131,072 × 8), directly replaces 128k × 8 volatile SRAMs without redesign.
Access Time	70 ns at V_CC = 5V ±5%, enabling direct drop-in use with 14-MHz microcontrollers.
Write Protection Threshold	4.50–4.75 V - guarantees automatic lockout before data corruption occurs during brownout.
Data Retention	10 years minimum without external power - enabled by factory-fresh lithium cell disconnected until first V_CC application.
Operating Temperature	–40°C to +85°C (IND grade), qualified for industrial control, metering, and automotive under-hood environments.
Supply Voltage Range	4.75 V to 5.25 V - ±5% tolerance ensures stable operation across wide-input DC-DC rails.
Package Type	32-pin 740-mil Extended DIP (EDIP), JEDEC-standard pinout compatible with legacy socketed SRAM designs.

Pinout & Package

DS1245AB-70 uses a JEDEC-standard 32-pin 740-mil Extended Dual In-line Package (EDIP) with integrated lithium battery and control circuitry. No external backup components are required.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit address bus supporting full 131,072-word addressing; TTL-compatible inputs.
DQ0–DQ7	Data Input/Output	Bidirectional 8-bit data bus; high-impedance during deselect or write cycles to prevent bus contention.
CE	Chip Enable	Active-low chip select; enables memory access only when low and synchronized with OE/WE timing.
WE	Write Enable	Active-low write strobe; controls data latching and output disable during writes.
OE	Output Enable	Active-low output enable; decouples data bus drivers when high to support multiplexed bus architectures.
V_CC	Power Supply	+5 V supply (4.75–5.25 V); powers SRAM core and monitoring circuitry; disconnects lithium during normal operation.
GND	Ground	Reference return path for all signals and internal battery switching circuitry.
NC	No Connect	Unbonded pins (pins 1, 2, 3, 33, 34 per PCM variant - not present in 32-pin EDIP); electrically isolated.

Key Features

Feature	Design Value
Automatic Power-Fail Detection	Monitors V_CC continuously; initiates write protection within 1.5 µs of out-of-tolerance detection to prevent partial writes.
Lithium Freshness Seal	Factory-disconnected battery retains full capacity until first V_CC > 4.25 V application - eliminates shelf-life degradation.
Unlimited Write Cycles	No wear-out mechanism; supports continuous logging or configuration updates without endurance limits.
Zero External Support Circuitry	Self-contained backup, voltage monitoring, and switching - eliminates need for external supervisors, diodes, or capacitors.
JEDEC 32-Pin DIP Compatibility	Direct replacement for standard 128k × 8 SRAMs; uses identical footprint and pinout - no PCB changes required.

Applications

Industrial Data Logger	Smart Meter Configuration Storage
Use Scenario: Continuous recording of sensor readings during mains power interruption in factory-floor monitoring systems. IC Role / Device Role / Timing Role: Nonvolatile SRAM holding last valid measurement set and timestamp while main CPU is offline. Use Value: Guarantees 10-year data retention without supercapacitors or external battery management, reducing BOM count and field failure risk.	Use Scenario: Storing tariff tables, calibration constants, and tamper-event logs in electricity/water/gas meters operating across –40°C to +85°C. IC Role / Device Role / Timing Role: Primary configuration memory with automatic write-lock on voltage sag to prevent corrupted billing parameters. Use Value: Eliminates EEPROM write delays and endurance concerns; enables instant save-on-power-loss with 70 ns access for real-time metering firmware.
RTC Backup Memory	PLC Firmware Parameter Cache
Use Scenario: Preserving real-time clock registers and alarm settings during extended AC power outages in building automation controllers. IC Role / Device Role / Timing Role: Low-power standby memory (600 µA max ICCS1) maintaining RTC context while main system sleeps. Use Value: Delivers deterministic 4.5 V write-protect threshold and seamless lithium switchover at ~3.0 V - no software intervention needed.	Use Scenario: Caching motion-control parameters and I/O mapping in programmable logic controllers subject to frequent power cycling. IC Role / Device Role / Timing Role: High-reliability scratchpad memory for runtime-configurable logic blocks requiring instant restore after reboot. Use Value: Supports unlimited parameter updates via HMI interface without flash wear leveling overhead or write latency penalties.

Industrial Data Logger

Smart Meter Configuration Storage

Use Scenario: Continuous recording of sensor readings during mains power interruption in factory-floor monitoring systems.

IC Role / Device Role / Timing Role: Nonvolatile SRAM holding last valid measurement set and timestamp while main CPU is offline.

Use Value: Guarantees 10-year data retention without supercapacitors or external battery management, reducing BOM count and field failure risk.

Use Scenario: Storing tariff tables, calibration constants, and tamper-event logs in electricity/water/gas meters operating across –40°C to +85°C.

IC Role / Device Role / Timing Role: Primary configuration memory with automatic write-lock on voltage sag to prevent corrupted billing parameters.

Use Value: Eliminates EEPROM write delays and endurance concerns; enables instant save-on-power-loss with 70 ns access for real-time metering firmware.

RTC Backup Memory

PLC Firmware Parameter Cache

Use Scenario: Preserving real-time clock registers and alarm settings during extended AC power outages in building automation controllers.

IC Role / Device Role / Timing Role: Low-power standby memory (600 µA max ICCS1) maintaining RTC context while main system sleeps.

Use Value: Delivers deterministic 4.5 V write-protect threshold and seamless lithium switchover at ~3.0 V - no software intervention needed.

Use Scenario: Caching motion-control parameters and I/O mapping in programmable logic controllers subject to frequent power cycling.

IC Role / Device Role / Timing Role: High-reliability scratchpad memory for runtime-configurable logic blocks requiring instant restore after reboot.

Use Value: Supports unlimited parameter updates via HMI interface without flash wear leveling overhead or write latency penalties.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1245Y-70IND+	Wider V_CC range (4.5–5.5 V, ±10%), lower write-protect threshold (4.25 V), same 70 ns speed and IND temp grade.	Better suited for systems with unregulated 5 V rails or higher-voltage tolerant designs where tighter V_CC regulation is unavailable.	Select DS1245Y-70IND+ if input supply varies beyond ±5%; otherwise DS1245AB-70IND+ provides tighter voltage margin for precision brownout response.
STK12C68-A70I	Same 1024k size, 70 ns speed, and industrial temp rating, but uses external capacitor-based backup and lacks integrated lithium.	Requires external 0.1–0.47 F supercapacitor and charge circuit; higher board area and reliability dependency on external components.	Choose STK12C68-A70I only if lithium-free design is mandated; DS1245AB-70IND+ offers superior long-term retention and zero external component count.

Compared with DS1245Y-70IND+, the DS1245AB-70IND+ gives tighter V_CC control for critical brownout response, while versus STK12C68-A70I it eliminates supercapacitor aging, leakage, and charging complexity - delivering true set-and-forget nonvolatility.

Availability

DS1245AB-70 is available at Aetrix Electronics and suitable for industrial data loggers, smart meter configuration storage, and PLC firmware parameter caching requiring stable component supply across extended product lifecycles.

Supply support for DS1245AB-70 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for industrial, medical, and communications applications.

The DS1245AB-70 belongs to Maxim's nonvolatile SRAM family engineered for zero-maintenance, long-term data retention in mission-critical systems where power interruption is unavoidable.

FAQ

What is the guaranteed data retention period for DS1245AB-70?

The DS1245AB-70 guarantees a minimum 10-year data retention period in the absence of external power, measured from the time V_CC is first applied. This is ensured by factory-sealed lithium battery technology and internal voltage-monitoring circuitry that isolates the cell until initial power-up.

Does DS1245AB-70 require external components for battery backup operation?

No, the DS1245AB-70 requires no external components for nonvolatile operation. It integrates a lithium energy source, voltage monitor, and power-switching circuitry into a single 32-pin EDIP package. Only standard V_CC, GND, and control signals are needed for full functionality.

What is the write-protection voltage threshold for DS1245AB-70?

The DS1245AB-70 activates automatic write protection when V_CC falls within the range of 4.50 V to 4.75 V. This threshold is specified in the datasheet's DC Electrical Characteristics table and ensures data integrity before supply collapse reaches critical levels.

Is DS1245AB-70 compatible with standard 32-pin DIP sockets used for 128k × 8 SRAMs?

Yes, the DS1245AB-70 uses a JEDEC-standard 32-pin 740-mil Extended DIP footprint and pinout. It is designed as a direct replacement for conventional 128k × 8 volatile SRAMs, requiring no PCB layout changes or adapter hardware.

How does DS1245AB-70 handle power-up and power-down transitions?

During power-down, the DS1245AB-70 detects V_CC decay within 1.5 µs, disables all inputs, places outputs in high-impedance, and switches to lithium power below ~3.0 V. At power-up, it reconnects V_CC above ~3.0 V and resumes full operation once V_CC exceeds 4.75 V.

DS1245AB-70 Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 32-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 1Mbit

Memory Organization:: 128K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 4.75V ~ 5.25V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 32-EDIP

DS1245AB-70 FAQ

1.How can I place an order for DS1245AB-70 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1245AB-70 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1245AB-70 reliable?

The price and inventory of DS1245AB-70 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1245AB-70 is usually 5 days.

3.What payment methods are accepted for DS1245AB-70?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1245AB-70 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1245AB-70?

DS1245AB-70 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1245AB-70 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1245AB-70?

For technical support, including DS1245AB-70 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1245AB-70 requirements.

6.How does Aetrix verify that DS1245AB-70 is sourced from the original manufacturer or authorized distributors?

All DS1245AB-70 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1245AB-70 meets industry standards.

7.What is the process for return or replacement of DS1245AB-70?

All DS1245AB-70 units undergo pre-shipment inspection (PSI). If there is an issue with DS1245AB-70, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1245AB-70 part is unused and in its original packaging.

Return procedure for DS1245AB-70:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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