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Analog Devices Inc./Maxim Integrated DS1245W-100IND
- Part No.:
- DS1245W-100IND
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 32-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1245W-100IND.pdf
- Description:
- IC NVSRAM 1MBIT PARALLEL 32EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:1,058
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Product details
Overview
DS1245W-100IND from Maxim Integrated is a 1,048,576-bit (128k × 8) nonvolatile SRAM with integrated lithium backup, 100 ns read/write access time, 3.3 V supply, and industrial temperature range (–40°C to +85°C). It replaces volatile SRAM, EEPROM, or Flash in battery-backed memory applications requiring data retention during power loss.
For engineers reviewing the DS1245W-100IND datasheet, DS1245W-100IND pinout, DS1245W-100IND application, or DS1245W-100IND equivalent, key selection factors include guaranteed 10-year data retention without external power, automatic write protection at VCC < 2.8 V, JEDEC-standard 32-pin DIP package, and compatibility with standard microprocessor bus interfaces.
Technical Context
The DS1245W-100IND integrates static RAM, lithium energy source, and voltage-monitoring control circuitry into a single monolithic package. Its power-fail detection triggers automatic switch to battery backup when VCC drops below ~2.8 V, enabling unconditional write protection and high-impedance outputs.
It operates as a byte-wide parallel memory with full static timing: CE/WE/OE-controlled read/write cycles, no refresh required, and seamless transition between VCC-powered and battery-backed modes. The device uses a self-contained lithium cell electrically disconnected until first power-up to preserve shelf life.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1,048,576 bits (131,072 × 8), directly replaces 128k × 8 volatile SRAMs |
| Access Time | 100 ns - supports high-speed microprocessor bus interfacing without wait states |
| Supply Voltage | 3.0 V to 3.6 V - compatible with 3.3 V logic systems; write protection activates at 2.8 V |
| Data Retention | 10 years minimum without external power - enabled by internal lithium battery and automatic switchover |
| Operating Temp | –40°C to +85°C - qualified for industrial environments including factory automation and telecom infrastructure |
| Write Cycles | Unlimited - no wear-out mechanism unlike EEPROM or Flash |
| Package | 32-pin JEDEC-standard 740-mil extended DIP - drop-in replacement for legacy 32-pin SRAM sockets |
Pinout & Package
DS1245W-100IND is supplied in a 32-pin JEDEC-standard 740-mil extended dual in-line package (EDIP), wave- or hand-solderable only (not reflow-compatible). The package integrates SRAM, lithium battery, and control circuitry in one hermetically sealed unit.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus for accessing all 131,072 bytes; fully static, no timing constraints on hold time |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; high-impedance when CE or OE inactive |
| CE | Chip Enable | Active-low chip select; initiates read/write when low with WE/OE conditions satisfied |
| WE | Write Enable | Active-low write strobe; controls write cycle start/termination with CE |
| OE | Output Enable | Active-low output enable; disables outputs during writes to prevent bus contention |
| VCC | Power Supply | +3.3 V main supply; powers SRAM and enables lithium disconnect circuitry on first power-up |
| GND | Ground | Reference return path for all signals and power |
| NC | No Connect | Two pins (pins 1 and 32) are unconnected; must remain floating per datasheet |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Protection | Monitors VCC continuously; switches to lithium backup and enables write protection within 1.5 µs of out-of-tolerance condition |
| Freshness Seal | Lithium source remains electrically disconnected until first VCC application >3.0 V, preserving full 10-year retention capacity |
| Zero External Support Circuitry | Requires no external capacitors, regulators, or supervision ICs - direct connection to 3.3 V bus suffices |
| Standardized Pinout | JEDEC 32-pin DIP layout matches legacy 128k × 8 SRAMs - enables socket-level replacement without PCB redesign |
| Industrial Temperature Qualification | Guaranteed operation across –40°C to +85°C with full AC/DC specs - validated for harsh embedded environments |
Applications
| Industrial Data Logger | Medical Diagnostic Equipment |
|---|---|
Use Scenario: Continuous acquisition of sensor readings (e.g., temperature, pressure) in unattended field deployments where mains power may be intermittent. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time measurement buffers and configuration state during unexpected power loss. Use Value: Guarantees 10-year data integrity without supercapacitors or external battery management, reducing BOM count and field failure risk. | Use Scenario: Storing calibration coefficients, patient session history, and fault logs in portable ultrasound or ECG devices subject to frequent power cycling. IC Role / Device Role / Timing Role: Battery-backed memory preserving critical diagnostic metadata across shutdown/reboot cycles. Use Value: Eliminates need for EEPROM write endurance management and avoids Flash latency during boot initialization. |
| Telecom Base Station Controller | Factory Automation PLC Module |
Use Scenario: Maintaining operational state, alarm history, and firmware patch staging in carrier-grade baseband units operating in outdoor cabinets. IC Role / Device Role / Timing Role: High-reliability memory holding runtime variables and fail-safe recovery data during brownouts or thermal shutdowns. Use Value: 100 ns access time enables deterministic response to real-time control interrupts without memory wait states. | Use Scenario: Preserving ladder logic execution context, I/O mapping tables, and recipe parameters in programmable logic controllers exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: Industrial-grade nonvolatile storage retaining program state through power interruptions in manufacturing lines. Use Value: –40°C to +85°C qualification ensures stable operation in unconditioned factory floors; unlimited write cycles support frequent parameter updates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1248W-100IND | Same architecture but 256k × 8 (2 Mbit); identical 100 ns speed, 3.3 V, and –40°C to +85°C rating | Higher density for applications needing >128 kB of battery-backed RAM | Select when memory footprint exceeds 128k × 8; pinout differs (32-pin DIP remains, but A17 added) |
| STK12C68-100I | 128k × 8 NV SRAM; 100 ns access; 3.3 V; –40°C to +85°C; but uses external capacitor-based backup instead of integrated lithium | Lower cost alternative where 10-year retention is not mandatory and board space allows discrete backup components | Choose if long-term data retention is secondary to BOM cost and design flexibility is needed for backup topology |
Compared with DS1245W-100IND, DS1248W-100IND offers double density with minimal interface change, while STK12C68-100I trades integrated lithium reliability for lower component count flexibility-neither is pin-compatible, but both serve overlapping industrial memory roles.
Availability
DS1245W-100IND is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic equipment, telecom base station controllers, and factory automation PLC modules requiring stable component supply and guaranteed long-term data retention.
Supply support for DS1245W-100IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications applications.
The DS1245W-100IND belongs to Maxim's nonvolatile SRAM product line, engineered specifically for mission-critical memory backup where data integrity during power loss cannot be compromised.
FAQ
What is the guaranteed data retention period for DS1245W-100IND without external power?
The DS1245W-100IND guarantees a minimum of 10 years of data retention in the absence of external power, based on its integrated lithium energy source and controlled discharge profile. This retention time begins after first application of VCC >3.0 V, which activates the battery. The DS1245W-100IND's freshness seal ensures full capacity is preserved until initial power-up.
Does DS1245W-100IND require external circuitry for battery backup operation?
No, the DS1245W-100IND requires no external circuitry for battery backup operation. It integrates a lithium energy source, voltage monitoring, and automatic power switchover logic into a single 32-pin DIP package. The DS1245W-100IND functions as a drop-in replacement for standard 128k × 8 SRAMs with zero additional components.
Is DS1245W-100IND pin-compatible with standard 32-pin 128k × 8 SRAMs?
Yes, the DS1245W-100IND uses a JEDEC-standard 32-pin 740-mil extended DIP package with pinout identical to conventional 128k × 8 volatile SRAMs. Address (A0–A16), data (DQ0–DQ7), and control (CE, WE, OE, VCC, GND) signals map directly, enabling socket-level replacement without PCB modification.
What happens to DS1245W-100IND when VCC falls below the write-protection threshold?
When VCC drops below ~2.8 V, the DS1245W-100IND immediately disables write capability, places all inputs in "don't care" state, and forces outputs to high impedance. Within 1.5 µs, it connects the internal lithium source to retain RAM contents. The DS1245W-100IND maintains data integrity autonomously until VCC is restored above 3.0 V.
Can DS1245W-100IND operate in a 3.0 V system?
Yes, the DS1245W-100IND is specified for 3.0 V to 3.6 V operation and functions fully across this range. Its write-protection threshold is 2.8–3.0 V, ensuring reliable data safeguarding even at the lower end of the supply range. The DS1245W-100IND delivers 100 ns access time and full AC/DC specifications at 3.0 V, supporting robust low-voltage industrial designs.
DS1245W-100IND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 32-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-EDIP
DS1245W-100IND FAQ
1.How can I place an order for DS1245W-100IND through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1245W-100IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1245W-100IND reliable?
The price and inventory of DS1245W-100IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1245W-100IND is usually 5 days.
3.What payment methods are accepted for DS1245W-100IND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1245W-100IND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1245W-100IND?
DS1245W-100IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1245W-100IND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1245W-100IND?
For technical support, including DS1245W-100IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1245W-100IND requirements.
6.How does Aetrix verify that DS1245W-100IND is sourced from the original manufacturer or authorized distributors?
All DS1245W-100IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1245W-100IND meets industry standards.
7.What is the process for return or replacement of DS1245W-100IND?
All DS1245W-100IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1245W-100IND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1245W-100IND part is unused and in its original packaging.
Return procedure for DS1245W-100IND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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