Analog Devices Inc./Maxim Integrated DS1245W-150
- Part No.:
- DS1245W-150
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 32-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1245W-150.pdf
- Description:
- IC NVSRAM 1MBIT PARALLEL 32EDIP
- Quantity:
- Payment:

- Shipping:

Inventory:3,946
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DS1245W-150 from Maxim Integrated is a 3.3V, 1024k-bit (131,072 × 8) nonvolatile static RAM with lithium backup, 100ns read/write access time, automatic power-loss data protection, and JEDEC-standard 32-pin DIP packaging. It replaces volatile SRAM, EEPROM, or Flash in systems requiring persistent memory without external support circuitry-e.g., industrial PLCs retaining configuration during brownouts.
For engineers reviewing the DS1245W-150 datasheet, DS1245W-150 pinout, DS1245W-150 application, or DS1245W-150 equivalent, key selection criteria include guaranteed 10-year data retention at 25°C, write-protection activation at ≤2.9V VCC, 3.0–3.6V operating supply range, and compatibility with standard 32-pin bytewide DIP sockets used for legacy 128k×8 SRAM upgrades.
Technical Context
The DS1245W-150 integrates SRAM, lithium battery, and voltage-monitoring control logic into a monolithic 32-pin EDIP package. Its power-switching circuit autonomously connects the lithium source when VCC drops below 2.9V and disconnects it upon power-up above 2.5V-enabling seamless transition to battery-backed retention mode without host intervention.
It operates as a drop-in replacement for standard 128k×8 SRAMs using identical address/data/control timing: CE/OE/WE dual-gated read cycles, WE/CE-synchronized writes, and high-impedance outputs during deselection. The device requires no external capacitors, regulators, or write-protection logic-only a stable 3.3V ±0.3V supply and standard parallel bus interface.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 1,048,576-bit (131,072 words × 8 bits); matches 128k×8 SRAM footprint for direct socket replacement. |
| Access Time | 100ns tACC; ensures compatibility with 10MHz bus systems without wait states. |
| Data Retention | ≥10 years at +25°C without external power; enabled by internal lithium cell and freshness seal. |
| Write Protection Threshold | VTP = 2.8–3.0V; triggers automatic write-disable before VCC falls to unreliable levels. |
| Supply Voltage Range | VCC = 3.0V to 3.6V; supports industrial-grade 3.3V rails with ±10% tolerance. |
| Operating Temperature | 0°C to +70°C (Commercial grade); validated for use in embedded controllers and instrumentation. |
| Standby Current | ICCS1 ≤ 250µA at CE = 2.2V; enables low-power retention in battery-backed systems. |
Pinout & Package
DS1245W-150 uses a JEDEC-standard 32-pin Extended Dual In-line Package (EDIP), 740-mil width, wave-solderable only. The package integrates SRAM, lithium battery, and power-fail detection circuitry in one hermetically sealed unit.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 131,072-word addressing; compatible with standard microprocessor address lines. |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; TTL-compatible inputs/outputs with 2mA drive capability. |
| CE | Chip Enable | Active-low chip select; must be low with WE high and OE low for valid read access. |
| WE | Write Enable | Active-low write strobe; falling edge initiates write cycle synchronized with CE. |
| OE | Output Enable | Active-low output enable; controls data bus drivers independently of CE/WE during reads. |
| VCC | Power Supply | +3.3V supply input; powers SRAM core and control logic; monitored for fail-detect triggering. |
| GND | Ground | Reference return path for all signals and internal battery circuitry. |
| NC | No Connect | Pins 1, 17, 32 are unconnected; no internal bonding or function. |
Key Features
| Feature | Design Value |
|---|---|
| Lithium freshness seal | Internal switch disconnects battery until first VCC application >3.0V-guarantees full 10-year retention capacity from shipment. |
| Automatic write protection | Hardware-level VCC monitoring triggers unconditional write-disable and high-Z outputs when VCC falls below 2.9V-no firmware or external logic required. |
| Unlimited write cycles | SRAM-based architecture eliminates endurance limits-supports continuous logging or real-time data buffering without wear-out concerns. |
| Standard DIP pinout | JEDEC 32-pin bytewide layout enables plug-in replacement of obsolete 128k×8 volatile SRAMs without PCB redesign. |
| Low-power retention | 250µA max ICCS1 at standby ensures minimal battery drain during extended power-off periods. |
Applications
| Industrial Data Loggers | Medical Device Configuration Storage |
|---|---|
Use Scenario: Battery-powered field loggers recording sensor data across multi-day outages. IC Role / Device Role / Timing Role: Nonvolatile SRAM holding timestamped measurements and calibration tables during AC loss. Use Value: 10-year data retention and automatic write-protection ensure zero data loss even after repeated brownouts-no file system or wear-leveling overhead. | Use Scenario: Portable diagnostic equipment storing user preferences, calibration offsets, and audit trails. IC Role / Device Role / Timing Role: Direct-memory-mapped configuration store accessed via microcontroller's parallel bus. Use Value: 100ns access time enables real-time parameter recall; unlimited writes allow frequent recalibration without endurance degradation. |
| Telecom Base Station Control Memory | Automotive ECU Boot Parameters |
Use Scenario: Remote radio units maintaining operational state and fault history during grid instability. IC Role / Device Role / Timing Role: Fail-safe memory for critical control registers and last-known-good configuration. Use Value: Hardware-triggered write-disable at 2.9V prevents corruption during gradual VCC decay-verified under telecom power-sequencing standards. | Use Scenario: Engine control units preserving adaptive learning values and emission calibration across ignition cycles. IC Role / Device Role / Timing Role: Pin-compatible upgrade path for legacy 128k×8 SRAMs in existing ECU designs. Use Value: Same 32-pin DIP footprint and timing allows retrofit without layout changes-reducing qualification time for automotive Tier 1 suppliers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK12C68-5 | 5V-only operation; 55ns access time; 256k-bit density; uses external capacitor for backup. | Requires 5V rail and external capacitor; not suitable for 3.3V systems or space-constrained designs. | Select only if legacy 5V design exists and board-level capacitor placement is feasible. |
| DS1248W-100 | Same 3.3V supply and 1024k-bit size but in PowerCap Module (34-pin PCM) format; requires separate DS9034PC PowerCap. | Surface-mount solution; avoids through-hole assembly; enables reflow soldering of SRAM base before battery attachment. | Choose for new SMT designs prioritizing automated assembly and thermal safety-DS1245W-150 remains optimal for through-hole upgrades. |
Compared with STK12C68-5 and DS1248W-100, the DS1245W-150 uniquely delivers 3.3V compatibility, integrated lithium backup, and JEDEC 32-pin DIP packaging in a single monolithic unit-making it the only option for direct socket replacement of legacy 128k×8 SRAMs in commercial-temperature 3.3V systems.
Availability
DS1245W-150 is available at Aetrix Electronics and suitable for industrial data loggers, medical device configuration storage, and telecom base station control memory requiring stable component supply, long-term data integrity, and legacy SRAM upgrade paths.
Supply support for DS1245W-150 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in analog, mixed-signal, and power-management ICs for industrial, communications, and computing applications.
The DS1245W-150 belongs to Maxim's nonvolatile SRAM product line, designed specifically to eliminate external backup components and simplify migration from volatile memory in mission-critical embedded systems.
FAQ
What is the guaranteed data retention period for DS1245W-150 under normal conditions?
The DS1245W-150 guarantees ≥10 years of data retention at +25°C in the absence of external power. This specification assumes the lithium energy source is activated on first power-up (>3.0V) and accounts for cumulative time spent in battery-backup mode. Retention time decreases at elevated temperatures per Arrhenius modeling, but the DS1245W-150 maintains functional integrity across its commercial temperature range (0°C to +70°C).
Does DS1245W-150 require external components for nonvolatile operation?
No, the DS1245W-150 requires no external capacitors, regulators, or control logic for nonvolatile operation. Its monolithic 32-pin EDIP package integrates the 1024k-bit SRAM, lithium battery, and voltage-monitoring circuitry. The internal freshness seal ensures full battery capacity until first VCC application, and automatic switching activates backup power when VCC drops below 2.9V-making DS1245W-150 a true single-component solution.
Can DS1245W-150 be used as a direct replacement for standard 128k×8 SRAMs?
Yes, DS1245W-150 is engineered as a pin- and function-compatible replacement for 128k×8 volatile SRAMs using the JEDEC-standard 32-pin DIP footprint. Its address (A0–A16), data (DQ0–DQ7), and control (CE/OE/WE/VCC/GND) signals match industry-standard timing and electrical characteristics-including 100ns access time and TTL-compatible I/O-enabling drop-in upgrades without PCB or firmware changes.
What happens to DS1245W-150 outputs during power failure?
During VCC decay below ~2.9V, the DS1245W-150 automatically disables all outputs, placing them in high-impedance state, and locks write functionality. Address, data, and control inputs become "don't care," preventing bus contention or unintended writes. This behavior is hardware-enforced by the internal power-fail detector-no software or external circuitry is needed to ensure safe shutdown, making DS1245W-150 ideal for fail-safe memory applications.
Is DS1245W-150 RoHS-compliant and lead-free?
Yes, DS1245W-150 is RoHS-compliant and lead-free, indicated by the "+" suffix in its ordering code (e.g., DS1245W-150+). It meets EU Directive 2011/65/EU requirements and is manufactured using lead-free solderable terminations. The device is rated for wave soldering only (not reflow), consistent with its 32-pin EDIP package construction and internal lithium cell safety constraints.
DS1245W-150 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 32-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 150ns
- Access Time:
- 150 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-EDIP
DS1245W-150 FAQ
1.How can I place an order for DS1245W-150 through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1245W-150 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1245W-150 reliable?
The price and inventory of DS1245W-150 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1245W-150 is usually 5 days.
3.What payment methods are accepted for DS1245W-150?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1245W-150 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1245W-150?
DS1245W-150 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1245W-150 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1245W-150?
For technical support, including DS1245W-150 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1245W-150 requirements.
6.How does Aetrix verify that DS1245W-150 is sourced from the original manufacturer or authorized distributors?
All DS1245W-150 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1245W-150 meets industry standards.
7.What is the process for return or replacement of DS1245W-150?
All DS1245W-150 units undergo pre-shipment inspection (PSI). If there is an issue with DS1245W-150, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1245W-150 part is unused and in its original packaging.
Return procedure for DS1245W-150:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1245W-150 Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
