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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1245Y-120

Name: DS1245Y-120
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1245Y-120
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1245Y-120

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 32-DIP Module (0.600", 15.24mm)

Datasheet:: DS1245Y-120.pdf

Description:: IC NVSRAM 1MBIT PARALLEL 32EDIP

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Inventory:4,512

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Product details

Overview

DS1245Y-120 from Maxim Integrated is a 1024k (131,072 × 8) nonvolatile static RAM with lithium-backed data retention, ±10% V_CC operation (4.5V–5.5V), 70 ns access time, and JEDEC-standard 32-pin DIP package. It replaces volatile SRAM, EEPROM, or Flash in systems requiring automatic write-protection during power loss - e.g., industrial PLCs preserving runtime configuration.

For engineers reviewing the DS1245Y-120 datasheet, DS1245Y-120 pinout, DS1245Y-120 application, or DS1245Y-120 equivalent, key selection criteria include guaranteed 10-year data retention without external power, self-contained lithium backup switching at ~3.0V, full functional operation down to 4.5V, and compatibility with legacy 128k×8 SRAM footprints.

Technical Context

The DS1245Y-120 integrates SRAM, lithium battery, and voltage-monitoring control circuitry into a single monolithic module. Its power-fail detection triggers unconditional write-protection and high-impedance outputs when V_CC drops below 4.25V, then switches to battery power below ~3.0V.

It supports standard asynchronous parallel interface timing: read cycles require CE and OE low with WE high; write cycles require CE and WE low. Address inputs A0–A16 decode 131,072 locations; DQ0–DQ7 provide bidirectional 8-bit data transfer with t_ACC = 70 ns and t_WC = 70 ns.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	1024 kbit (131,072 × 8) - matches 128k×8 SRAM footprint for drop-in replacement in legacy designs
Access Time	70 ns - enables direct interfacing with 14 MHz microcontrollers without wait states
V_CC Range	4.5V to 5.5V (±10%) - supports wide-input industrial power rails without regulation overhead
Data Retention	10 years minimum without external power - ensured by factory-sealed lithium cell activated only on first power-up
Write Protection Threshold	4.25V - initiates automatic hardware lockout before brownout corrupts writes
Operating Temp	0°C to +70°C (Commercial) - validated for stable operation in enclosed control cabinets
Package	32-pin JEDEC 740-mil Extended DIP - compatible with wave-soldered PCBs and socket-based prototyping

Pinout & Package

DS1245Y-120 uses a JEDEC-standard 32-pin Extended DIP (740-mil) package with integrated lithium battery and control logic. No external backup components are required.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit address bus supporting full 131,072-word addressing; TTL-compatible input thresholds
DQ0–DQ7	Data I/O	Bidirectional 8-bit data bus; high-impedance during write or deselection to prevent bus contention
CE	Chip Enable	Active-low chip select; must be low for read/write; drives internal protection state during power fail
WE	Write Enable	Active-low write strobe; controls data latching and output disable during write cycles
OE	Output Enable	Active-low output enable; separates read timing from chip select for flexible bus arbitration
V_CC	Power Supply	+5V supply pin; powers SRAM core and monitoring circuitry; disconnects lithium source above 4.25V
GND	Ground	Reference return for all signals and power; decoupling capacitor required near V_CC/GND pins
NC	No Connect	Unbonded pins (pins 1, 17, 32); must remain unconnected per design - no routing or pull-ups

Key Features

Feature	Design Value
Automatic Power-Fail Write Protection	Hardware-enforced lockout triggered at 4.25V V_CC, eliminating need for external supervisor ICs or firmware intervention
Lithium Freshness Seal	Factory-disconnected battery ensures full 10-year retention capacity; enabled only on first V_CC application >4.25V
Unlimited Write Cycles	No endurance limit - supports continuous logging or real-time parameter updates without wear-out concerns
Self-Contained Nonvolatility	Single-package integration of SRAM, battery, and switch eliminates external capacitors, diodes, or backup controllers
Standard 32-Pin DIP Footprint	Direct replacement for obsolete 128k×8 volatile SRAMs (e.g., HM628128) without PCB redesign

Applications

Industrial Data Logger	Medical Device Configuration Storage
Use Scenario: Battery-powered field logger records sensor readings every 5 seconds and retains last 72 hours of data across power interruptions. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-read/write memory with zero-latency backup switching at 3.0V. Use Value: Eliminates supercapacitor charging delays and EEPROM write latency; guarantees atomic data preservation during grid flicker or battery swap.	Use Scenario: Portable ultrasound unit stores user calibration profiles, probe settings, and safety limits that must survive overnight shutdown. IC Role / Device Role / Timing Role: Primary configuration memory with hardware write-protection activated before V_CC falls below 4.25V. Use Value: Prevents corruption of critical medical parameters during unexpected AC loss; meets IEC 62304 data integrity requirements.
Telecom Base Station Clock Buffer	Automotive ECU Calibration Table Cache
Use Scenario: Cellular base station maintains GPS timing offset tables and neighbor-cell handover parameters during brief utility outages. IC Role / Device Role / Timing Role: Low-access-time NVSRAM holding time-critical lookup tables accessed by FPGA timing controller. Use Value: Sustains synchronization accuracy without reacquisition delay; avoids 500ms+ GPS cold-start penalty after power recovery.	Use Scenario: Engine control unit caches adaptive fuel trim values and knock sensor learning maps between ignition cycles. IC Role / Device Role / Timing Role: High-reliability memory storing dynamic calibration data updated every engine cycle. Use Value: Enables immediate torque delivery on restart; eliminates 3–5 second "limp mode" while EEPROM reloads calibration data.

Industrial Data Logger

Medical Device Configuration Storage

Use Scenario: Battery-powered field logger records sensor readings every 5 seconds and retains last 72 hours of data across power interruptions.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-read/write memory with zero-latency backup switching at 3.0V.

Use Value: Eliminates supercapacitor charging delays and EEPROM write latency; guarantees atomic data preservation during grid flicker or battery swap.

Use Scenario: Portable ultrasound unit stores user calibration profiles, probe settings, and safety limits that must survive overnight shutdown.

IC Role / Device Role / Timing Role: Primary configuration memory with hardware write-protection activated before V_CC falls below 4.25V.

Use Value: Prevents corruption of critical medical parameters during unexpected AC loss; meets IEC 62304 data integrity requirements.

Telecom Base Station Clock Buffer

Automotive ECU Calibration Table Cache

Use Scenario: Cellular base station maintains GPS timing offset tables and neighbor-cell handover parameters during brief utility outages.

IC Role / Device Role / Timing Role: Low-access-time NVSRAM holding time-critical lookup tables accessed by FPGA timing controller.

Use Value: Sustains synchronization accuracy without reacquisition delay; avoids 500ms+ GPS cold-start penalty after power recovery.

Use Scenario: Engine control unit caches adaptive fuel trim values and knock sensor learning maps between ignition cycles.

IC Role / Device Role / Timing Role: High-reliability memory storing dynamic calibration data updated every engine cycle.

Use Value: Enables immediate torque delivery on restart; eliminates 3–5 second "limp mode" while EEPROM reloads calibration data.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1245AB-70+	Narrower V_CC range (4.75V–5.25V); higher write-protection threshold (4.50V)	Better suited for tightly regulated 5V systems where brownout margins exceed 5%	Select DS1245AB-70+ when system V_CC ripple is <±2.5% and deterministic power-fail response above 4.5V is required.
STK12C68-AW50	50 ns access time; 3.3V/5V dual-supply support; different pinout (28-pin SOJ)	Requires PCB layout change; targets mixed-voltage embedded systems with faster timing needs	Choose STK12C68-AW50 only if 50 ns speed is mandatory and board redesign is acceptable.

Compared with DS1245AB-70+, the DS1245Y-120 trades tighter voltage tolerance for broader compatibility with unregulated supplies, while STK12C68-AW50 offers speed and voltage flexibility at the cost of footprint incompatibility and no DIP option.

Availability

DS1245Y-120 is available at Aetrix Electronics and suitable for industrial data loggers, medical device configuration storage, and telecom timing buffer applications requiring stable component supply across extended product lifecycles.

Supply support for DS1245Y-120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for industrial, medical, and communications markets.

The DS1245Y-120 belongs to Maxim's nonvolatile SRAM family engineered for seamless replacement of volatile memory in systems where data integrity during power interruption is mission-critical.

FAQ

What is the guaranteed data retention period for DS1245Y-120 without external power?

The DS1245Y-120 guarantees a minimum of 10 years of data retention in the absence of external power. This is achieved using a factory-sealed lithium energy source that remains electrically disconnected until first application of V_CC >4.25V, preserving full battery capacity. The 10-year figure is assured through component selection, process control, and design - not production-tested per unit.

Does DS1245Y-120 require external support circuitry for nonvolatile operation?

No, the DS1245Y-120 requires no external support circuitry for nonvolatile operation. It integrates the SRAM array, lithium battery, voltage-monitoring logic, and power-switching circuitry into a single 32-pin DIP package. Only standard V_CC decoupling capacitance is needed - no supervisors, diodes, or backup capacitors are required.

What happens to DS1245Y-120 outputs during power failure?

When V_CC falls below 4.25V, the DS1245Y-120 unconditionally enables write protection and places all outputs in high-impedance state within 1.5 µs. As V_CC drops further to ~3.0V, the internal switch connects the lithium source to retain data. All address and data lines become "don't care," preventing bus conflicts during brownout.

Can DS1245Y-120 be used as a direct replacement for standard 128k×8 SRAMs?

Yes, the DS1245Y-120 uses a JEDEC-standard 32-pin 740-mil DIP footprint identical to legacy 128k×8 SRAMs like the HM628128. Its pinout (A0–A16, DQ0–DQ7, CE, WE, OE, V_CC, GND) is fully compatible, enabling drop-in replacement without PCB modification - provided the system operates within its 4.5V–5.5V V_CC range.

Is DS1245Y-120 RoHS-compliant and lead-free?

Yes, the DS1245Y-120 is RoHS-compliant and lead-free, indicated by the "+" suffix in its ordering code. It meets EU Directive 2011/65/EU and is manufactured using Maxim's lead(Pb)-free process. The package material is compatible with standard wave-soldering processes per JEDEC J-STD-020.

DS1245Y-120 Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 32-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 1Mbit

Memory Organization:: 128K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 120ns

Access Time:: 120 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 32-EDIP

DS1245Y-120 FAQ

1.How can I place an order for DS1245Y-120 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1245Y-120 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1245Y-120 reliable?

The price and inventory of DS1245Y-120 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1245Y-120 is usually 5 days.

3.What payment methods are accepted for DS1245Y-120?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1245Y-120 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1245Y-120?

DS1245Y-120 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1245Y-120 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1245Y-120?

For technical support, including DS1245Y-120 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1245Y-120 requirements.

6.How does Aetrix verify that DS1245Y-120 is sourced from the original manufacturer or authorized distributors?

All DS1245Y-120 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1245Y-120 meets industry standards.

7.What is the process for return or replacement of DS1245Y-120?

All DS1245Y-120 units undergo pre-shipment inspection (PSI). If there is an issue with DS1245Y-120, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1245Y-120 part is unused and in its original packaging.

Return procedure for DS1245Y-120:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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