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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1245Y-120IND

Name: DS1245Y-120IND
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1245Y-120IND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1245Y-120IND

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 32-DIP Module (0.600", 15.24mm)

Datasheet:: DS1245Y-120IND.pdf

Description:: IC NVSRAM 1MBIT PARALLEL 32EDIP

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Product details

Overview

DS1245Y-120IND from Maxim Integrated is a 1024k (131,072 × 8) nonvolatile static RAM with lithium backup, JEDEC 32-pin DIP package, ±10% V_CC tolerance (4.5V–5.5V), 70 ns access time, and industrial temperature range (–40°C to +85°C). It replaces volatile SRAM in battery-critical data logging systems where power loss protection is mandatory.

For engineers reviewing the DS1245Y-120IND datasheet, DS1245Y-120IND pinout, DS1245Y-120IND application, or DS1245Y-120IND equivalent, key selection criteria include write-protection voltage threshold (4.25V), automatic V_CC failover timing (t_PD = 1.5 µs), data retention guarantee (10 years), and compatibility with legacy 32-pin byte-wide memory sockets.

Technical Context

The DS1245Y-120IND integrates SRAM, lithium battery, and power-fail detection circuitry into a single monolithic DIP package. Its control logic continuously monitors V_CC; when voltage drops below 4.25V, it unconditionally enables write protection and switches to battery power within 1.5 µs.

It operates as a drop-in replacement for standard 128k × 8 SRAMs using identical address/data/control signaling (A0–A16, DQ0–DQ7, CE/OE/WE), with no external support circuitry required. The lithium source remains electrically disconnected until first V_CC application ≥4.25V, preserving full energy capacity.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	1024 kbit (131,072 × 8), directly substituting 128k × 8 volatile SRAM without address decoding changes
Access Time	70 ns - guarantees deterministic read/write timing for 14.3 MHz bus operation
V_CC Range	4.5V to 5.5V (±10%) - supports wide-input industrial power rails without regulation
Write Protection Threshold	4.25V (min) - triggers automatic data lock before brownout-induced corruption occurs
Data Retention	10 years minimum without external power - verified by component-level design and process control, not production-tested
Operating Temp	–40°C to +85°C - qualified for industrial embedded control, metering, and telemetry environments
Standby Current	50–150 µA (CE = V_CC–0.5V) - enables ultra-low-power sleep modes in battery-backed systems

Pinout & Package

DS1245Y-120IND uses a JEDEC-standard 32-pin Extended DIP (740-mil) package with integrated lithium battery and NV control circuitry. No external PowerCap required.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit address bus supporting full 131,072-word addressing; compatible with standard microprocessor address lines
DQ0–DQ7	Data I/O	8-bit bidirectional data bus with TTL-compatible levels; high-impedance during write or deselection
CE	Chip Enable	Active-low chip select; must be stable before address setup; controls device enable and power-down entry
OE	Output Enable	Active-low output gate; used to tri-state outputs independently of CE during read cycles
WE	Write Enable	Active-low write strobe; falling edge initiates write; disables outputs if OE active during write
V_CC	Power Supply	+5V supply input; monitored for failover; powers SRAM and control logic during normal operation
GND	Ground	Reference return path for all signals and internal circuitry
NC	No Connect	Pins 1, 2, 3, 17, 32 - physically present but internally unconnected; no routing or termination required

Key Features

Feature	Design Value
Automatic Power-Fail Response	Switches to lithium backup and locks writes within 1.5 µs of V_CC dropping below 4.25V - prevents partial writes and data corruption
Lithium Freshness Seal	Battery remains electrically isolated until first V_CC ≥4.25V - ensures full 10-year retention capacity at installation
Unlimited Write Cycles	No endurance limit on SRAM writes - eliminates wear leveling, erase cycles, or write latency penalties of Flash/EEPROM
Direct Socket Replacement	JEDEC 32-pin DIP footprint and pinout matches legacy 128k × 8 SRAMs - zero PCB redesign required
Wide V_CC Tolerance	±10% operating range (4.5V–5.5V) - accommodates unregulated industrial supplies and aging power systems

Applications

Industrial Data Logger	Smart Electricity Meter
Use Scenario: Continuous recording of energy consumption, tariff periods, and fault events in utility-grade meters deployed in remote substations. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time billing registers and event logs; retains data across grid outages and meter firmware updates. Use Value: Eliminates need for external EEPROM/Flash and associated write-cycle management; 10-year retention meets ANSI C12.20 and IEC 62053 standards.	Use Scenario: Storing tamper-detection timestamps, cryptographic keys, and calibration coefficients in revenue-grade meters subject to frequent power interruptions. IC Role / Device Role / Timing Role: Primary nonvolatile storage for security-critical parameters; write-protected automatically during brownouts to prevent key corruption. Use Value: Meets UL 61010-1 and IEC 62052-11 requirements for secure, unattended data retention without external supervision.
Programmable Logic Controller (PLC)	Medical Infusion Pump
Use Scenario: Preserving ladder logic state, I/O configuration, and alarm history in factory-floor PLCs exposed to voltage sags and EMI. IC Role / Device Role / Timing Role: Volatile program memory with seamless battery-backup failover; maintains operational continuity during transient power faults. Use Value: Enables deterministic restart after power recovery - avoids reinitialization delays and process downtime in ISO 13849-1 Category 3 systems.	Use Scenario: Storing drug delivery profiles, dosage history, and safety interlock states in Class II medical devices requiring continuous runtime integrity. IC Role / Device Role / Timing Role: Fail-safe memory for critical therapy parameters; guaranteed retention during AC/DC adapter failure or battery swap. Use Value: Supports FDA 21 CFR Part 11 audit trails and IEC 62304 software lifecycle compliance for Class B medical firmware.

Industrial Data Logger

Smart Electricity Meter

Use Scenario: Continuous recording of energy consumption, tariff periods, and fault events in utility-grade meters deployed in remote substations.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time billing registers and event logs; retains data across grid outages and meter firmware updates.

Use Value: Eliminates need for external EEPROM/Flash and associated write-cycle management; 10-year retention meets ANSI C12.20 and IEC 62053 standards.

Use Scenario: Storing tamper-detection timestamps, cryptographic keys, and calibration coefficients in revenue-grade meters subject to frequent power interruptions.

IC Role / Device Role / Timing Role: Primary nonvolatile storage for security-critical parameters; write-protected automatically during brownouts to prevent key corruption.

Use Value: Meets UL 61010-1 and IEC 62052-11 requirements for secure, unattended data retention without external supervision.

Programmable Logic Controller (PLC)

Medical Infusion Pump

Use Scenario: Preserving ladder logic state, I/O configuration, and alarm history in factory-floor PLCs exposed to voltage sags and EMI.

IC Role / Device Role / Timing Role: Volatile program memory with seamless battery-backup failover; maintains operational continuity during transient power faults.

Use Value: Enables deterministic restart after power recovery - avoids reinitialization delays and process downtime in ISO 13849-1 Category 3 systems.

Use Scenario: Storing drug delivery profiles, dosage history, and safety interlock states in Class II medical devices requiring continuous runtime integrity.

IC Role / Device Role / Timing Role: Fail-safe memory for critical therapy parameters; guaranteed retention during AC/DC adapter failure or battery swap.

Use Value: Supports FDA 21 CFR Part 11 audit trails and IEC 62304 software lifecycle compliance for Class B medical firmware.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1245AB-70IND+	±5% V_CC tolerance (4.75V–5.25V); higher write-protection threshold (4.5V); same 70 ns speed and industrial temp	Requires tighter-regulated 5V supply; better suited for systems with clean, low-noise power rails	Select DS1245AB-70IND+ only if V_CC stability exceeds ±5%; otherwise DS1245Y-120IND provides wider margin
STK12C68-AW50I	50 ns access time; 32-pin DIP; 1024k NV SRAM; ±10% V_CC; but uses capacitor-based backup (not lithium) and shorter retention (5 years)	Lower cost, but unsuitable for long-term archival or high-temperature deployments (>70°C)	Choose STK12C68-AW50I only for cost-sensitive, short-life-cycle designs where 5-year retention suffices

Compared with DS1245AB-70IND+, DS1245Y-120IND trades tighter V_CC regulation for broader supply tolerance and lower write-protection voltage - critical for brownout-prone industrial sites. Against STK12C68-AW50I, DS1245Y-120IND delivers proven 10-year lithium retention and superior thermal reliability in extended temperature operation.

Availability

DS1245Y-120IND is available at Aetrix Electronics and suitable for industrial data loggers, smart electricity meters, programmable logic controllers, and medical infusion pumps requiring stable component supply across extended product lifecycles.

Supply support for DS1245Y-120IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory ICs for industrial, automotive, and medical applications.

The DS1245Y-120IND belongs to Maxim's nonvolatile SRAM product line, engineered specifically for mission-critical data retention in systems where power interruption is unavoidable and data integrity is legally or safety mandated.

FAQ

What is the guaranteed data retention period for DS1245Y-120IND?

The DS1245Y-120IND guarantees a minimum 10-year data retention period in the absence of external power, based on component selection, process control, and design assurance - not production-tested per unit. This retention starts accumulating from the moment V_CC is first applied ≥4.25V, and assumes proper handling per the freshness seal specification.

Does DS1245Y-120IND require an external PowerCap module?

No, DS1245Y-120IND does not require an external PowerCap module. It is packaged in a 32-pin Extended DIP with the lithium battery and control circuitry fully integrated. The PowerCap Module (PCM) variant (e.g., DS1245YP-120IND+) is a separate surface-mount option requiring DS9034PC+ attachment - DS1245Y-120IND is self-contained.

What is the write-protection voltage threshold for DS1245Y-120IND?

The DS1245Y-120IND activates automatic write protection when V_CC falls below 4.25V (minimum), with typical threshold at 4.37V and maximum at 4.5V. This ensures data integrity during brownout conditions before system reset or shutdown sequences complete.

Can DS1245Y-120IND be used as a direct replacement for standard 128k × 8 SRAMs?

Yes, DS1245Y-120IND uses the JEDEC-standard 32-pin DIP footprint and pinout, matching 128k × 8 SRAMs exactly. Its A0–A16, DQ0–DQ7, CE/OE/WE, V_CC, and GND signals are functionally and electrically compatible - no PCB or firmware changes are needed for drop-in replacement.

What is the significance of the "IND" suffix in DS1245Y-120IND?

The "IND" suffix in DS1245Y-120IND denotes qualification for the industrial temperature range of –40°C to +85°C. This includes full characterization and screening of all DC and AC electrical parameters across that range, ensuring reliable operation in harsh environments such as factory automation, outdoor metering, and transportation systems.

DS1245Y-120IND Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 32-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 1Mbit

Memory Organization:: 128K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 120ns

Access Time:: 120 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 32-EDIP

DS1245Y-120IND FAQ

1.How can I place an order for DS1245Y-120IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1245Y-120IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1245Y-120IND reliable?

The price and inventory of DS1245Y-120IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1245Y-120IND is usually 5 days.

3.What payment methods are accepted for DS1245Y-120IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1245Y-120IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1245Y-120IND?

DS1245Y-120IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1245Y-120IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1245Y-120IND?

For technical support, including DS1245Y-120IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1245Y-120IND requirements.

6.How does Aetrix verify that DS1245Y-120IND is sourced from the original manufacturer or authorized distributors?

All DS1245Y-120IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1245Y-120IND meets industry standards.

7.What is the process for return or replacement of DS1245Y-120IND?

All DS1245Y-120IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1245Y-120IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1245Y-120IND part is unused and in its original packaging.

Return procedure for DS1245Y-120IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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