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Analog Devices Inc./Maxim Integrated DS1245Y-70IND

Part No.:
DS1245Y-70IND
Manufacturer:
Analog Devices Inc./Maxim Integrated
Category:
Memory
Package:
32-DIP Module (0.600", 15.24mm)
Datasheet:
AetrixDS1245Y-70IND.pdf
Description:
IC NVSRAM 1MBIT PARALLEL 32EDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,283

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Product details

Overview

DS1245Y-70IND from Maxim Integrated is a 1024k (131,072 × 8) nonvolatile static RAM with lithium backup, industrial temperature rating (–40°C to +85°C), ±10% VCC tolerance (4.5V–5.5V), and 70 ns read/write access time. It replaces volatile SRAM, EEPROM, or Flash in data-critical systems requiring automatic power-loss protection and 10-year data retention without external support circuitry.

For engineers reviewing the DS1245Y-70IND datasheet, DS1245Y-70IND pinout, DS1245Y-70IND application, or DS1245Y-70IND equivalent, key selection factors include its self-contained lithium energy source, JEDEC-standard 32-pin DIP package, write-protection threshold at 4.25 V, battery-freshness seal activation on first power-up, and compatibility with standard 128k × 8 memory interfaces.

Technical Context

The DS1245Y-70IND integrates SRAM, lithium battery, and voltage-monitoring control logic into a single monolithic module. Its internal power-switching circuit automatically engages the lithium source when VCC falls below ~3.0 V and disables it during normal operation above 4.5 V.

It operates as a byte-wide parallel memory with full static timing: CE/OE/WE control signals define read/write cycles, address inputs A0–A16 select 131,072 locations, and DQ0–DQ7 provide bidirectional data transfer - all compliant with standard microprocessor bus protocols without wait states or glue logic.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size1024 kbit (131,072 × 8), directly replaces 128k × 8 SRAMs in existing designs
Access Time70 ns max - supports high-speed CPU interfaces without cycle stretching
VCC Range4.5 V to 5.5 V (±10%) - accommodates wide-input power rails in industrial environments
Data Retention10 years minimum without external power - guaranteed by sealed lithium cell and low-leakage CMOS design
Operating Temp–40°C to +85°C (IND grade) - qualified for harsh industrial and transportation applications
Write CyclesUnlimited - no wear-out mechanism unlike EEPROM or Flash
Write-Protect Threshold4.25 V (min) - triggers automatic data protection before system brownout corrupts writes

Pinout & Package

DS1245Y-70IND uses a JEDEC-standard 32-pin Extended DIP (740-mil) package with integrated lithium battery and control circuitry. No external backup components are required.

Pin/TerminalCircuit RoleDesign Meaning
A0–A16Address Inputs17-bit address bus for full 131,072-word addressing; TTL-compatible inputs
DQ0–DQ7Data I/OBidirectional 8-bit data bus; high-impedance outputs during deselect or write
CEChip EnableActive-low chip select; controls device enable and write-cycle initiation timing
WEWrite EnableActive-low write strobe; combined with CE to define write start/stop boundaries
OEOutput EnableActive-low output gate; enables data drivers only during valid read cycles
VCCPower Supply+5 V supply input; powers SRAM core and monitoring circuitry
GNDGroundReference return path for all digital and analog functions
NCNo ConnectUnused pins (pins 1, 2, 17, 32); must remain unconnected per datasheet

Key Features

FeatureDesign Value
Automatic Power-Fail ProtectionOn-chip voltage monitor switches to lithium backup within 1.5 µs of VCC drop below 4.25 V, preventing data corruption
Freshness SealLithium cell remains electrically disconnected until first VCC > 4.25 V application - preserves full 10-year capacity
Zero External Support CircuitryNo external capacitors, regulators, or battery management ICs needed - simplifies BOM and layout
Standard Pinout CompatibilityJEDEC 32-pin DIP footprint matches legacy 128k × 8 SRAMs - enables drop-in replacement
Industrial Temperature QualificationFull functionality and timing guaranteed across –40°C to +85°C - validated per MIL-STD-883 methods

Applications

Industrial Data LoggerMedical Diagnostic Equipment

Use Scenario: Continuous acquisition of sensor readings in remote oil-field monitoring units with intermittent power.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing timestamped measurements during mains failure or battery depletion.

Use Value: Guarantees 10-year data integrity without periodic refresh or external backup power, reducing field maintenance.

Use Scenario: Storing calibration coefficients and last-known patient vital signs in portable ultrasound devices.

IC Role / Device Role / Timing Role: Fail-safe memory holding critical configuration and state data during unexpected shutdown.

Use Value: Eliminates need for EEPROM write endurance management and avoids Flash latency during boot recovery.

Avionics Black Box RecorderRailway Signaling Controller

Use Scenario: Capturing flight parameter history in aircraft cockpit voice and data recorders subject to extreme thermal cycling.

IC Role / Device Role / Timing Role: High-reliability memory buffer preserving pre-crash telemetry even after total power loss.

Use Value: Meets DO-160 Section 22 environmental stress requirements with –40°C to +85°C operation and 70 ns deterministic access.

Use Scenario: Maintaining interlocking logic state and event logs in wayside signaling cabinets exposed to outdoor rail environments.

IC Role / Device Role / Timing Role: Real-time nonvolatile storage for safety-critical control decisions and fault diagnostics.

Use Value: Provides unlimited write cycles and automatic write-protection - essential for high-frequency logging without wear-out risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DS1245AB-70IND+Narrower VCC range (4.75–5.25 V); higher write-protect threshold (4.5 V)Better suited for stable 5 V ±5% supplies; less tolerant of brownout conditions than DS1245Y-70INDSelect DS1245AB-70IND+ if system regulation meets tight 5 V tolerance and higher VTP improves noise margin
STK12C68-AW50I50 ns access time; 5 V ±10% operation; 10-year retention; 32-pin DIP but different pinout (no A16, NC placement differs)Not pin-compatible; requires PCB redesign; lacks freshness seal and same VTP behaviorChoose STK12C68-AW50I only when faster access is mandatory and layout revision is acceptable

Compared with DS1245AB-70IND+ and STK12C68-AW50I, the DS1245Y-70IND offers broader supply tolerance (±10%), lower write-protect threshold (4.25 V), and guaranteed pin-compatibility with legacy 128k × 8 designs - making it optimal for retrofitting industrial systems with marginal power regulation.

Availability

DS1245Y-70IND is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic equipment, avionics black box recorders, and railway signaling controllers requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DS1245Y-70IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a U.S.-based semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications markets.

The DS1245Y-70IND belongs to Maxim's nonvolatile SRAM product line, engineered specifically for mission-critical data retention in systems where power interruption is frequent or unpredictable - emphasizing reliability, zero-support design, and seamless integration into legacy memory sockets.

FAQ

What is the guaranteed data retention period for the DS1245Y-70IND?

The DS1245Y-70IND guarantees a minimum data retention period of 10 years in the absence of external power. This specification is assured through component selection, process control, and design - not measured per unit during production testing. The built-in lithium energy source remains disconnected until first power application, preserving full capacity for the full retention window. DS1245Y-70IND achieves this without external capacitors or support circuitry.

Does the DS1245Y-70IND require external circuitry for battery backup operation?

No, the DS1245Y-70IND requires no external circuitry for battery backup operation. It integrates a lithium energy source, voltage-monitoring logic, and power-switching circuitry into a single 32-pin DIP package. The device automatically engages the lithium cell when VCC drops below ~3.0 V and disables it during normal operation above 4.5 V. DS1245Y-70IND is fully functional as a standalone nonvolatile memory.

Is the DS1245Y-70IND pin-compatible with standard 128k × 8 SRAMs?

Yes, the DS1245Y-70IND uses a JEDEC-standard 32-pin Extended DIP (740-mil) package with identical pinout to conventional 128k × 8 static RAMs. Address lines A0–A16, data lines DQ0–DQ7, and control signals CE, WE, OE, VCC, and GND align directly - enabling true drop-in replacement without PCB modification. DS1245Y-70IND maintains full timing compatibility at 70 ns access time.

What is the write-protection voltage threshold for the DS1245Y-70IND?

The DS1245Y-70IND activates automatic write protection when VCC falls to 4.25 V (minimum), with typical threshold at 4.37 V and maximum at 4.5 V. This ensures data integrity during brownout conditions well before system logic fails. Unlike the DS1245AB variant (4.5 V threshold), DS1245Y-70IND provides earlier protection for systems with looser voltage regulation. All inputs become "don't care" and outputs go high-impedance upon activation.

How does the freshness seal function on the DS1245Y-70IND?

The DS1245Y-70IND ships with its lithium energy source electrically disconnected via an internal switch. The battery remains isolated until VCC is first applied at ≥4.25 V, at which point the switch closes and enables backup operation. This preserves full lithium capacity for the entire 10-year retention period. DS1245Y-70IND eliminates shelf-life degradation concerns common in pre-connected battery modules.

DS1245Y-70IND Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc./Maxim Integrated
Series:
-
Package/Case:
32-DIP Module (0.600", 15.24mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
70ns
Access Time:
70 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
32-EDIP

DS1245Y-70IND FAQ

1.How can I place an order for DS1245Y-70IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1245Y-70IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1245Y-70IND reliable?

The price and inventory of DS1245Y-70IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1245Y-70IND is usually 5 days.

3.What payment methods are accepted for DS1245Y-70IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1245Y-70IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1245Y-70IND?

DS1245Y-70IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1245Y-70IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1245Y-70IND?

For technical support, including DS1245Y-70IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1245Y-70IND requirements.

6.How does Aetrix verify that DS1245Y-70IND is sourced from the original manufacturer or authorized distributors?

All DS1245Y-70IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1245Y-70IND meets industry standards.

7.What is the process for return or replacement of DS1245Y-70IND?

All DS1245Y-70IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1245Y-70IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1245Y-70IND part is unused and in its original packaging.

Return procedure for DS1245Y-70IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DS1245Y-70IND Tags

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