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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1245Y-85

Name: DS1245Y-85
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1245Y-85
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1245Y-85

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 32-DIP Module (0.600", 15.24mm)

Datasheet:: DS1245Y-85.pdf

Description:: IC NVSRAM 1MBIT PARALLEL 32EDIP

Quantity:: RFQ Add To RFQ list

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Inventory:3,229

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Product details

Overview

DS1245Y-85 from Maxim Integrated is a 1024k (131,072 × 8) nonvolatile static RAM with integrated lithium backup, JEDEC-standard 32-pin DIP package, ±10% V_CC operation (4.5V–5.5V), and 70 ns read/write access time. It automatically enables write protection during power loss and retains data for ≥10 years without external power - used in industrial control memory logging and legacy system SRAM replacement.

For engineers reviewing the DS1245Y-85 datasheet, DS1245Y-85 pinout, DS1245Y-85 application, or DS1245Y-85 equivalent, key selection criteria include its self-contained battery-backed architecture, guaranteed 10-year data retention, 70 ns timing, industrial temperature rating (-40°C to +85°C), and direct drop-in compatibility with standard 128k×8 SRAM sockets.

Technical Context

The DS1245Y-85 integrates SRAM, lithium energy source, and voltage-monitoring control circuitry in one monolithic DIP package. Its power-fail detection triggers automatic switch to battery backup when V_CC drops below 4.25 V, disabling all inputs and placing outputs in high-impedance state.

It operates as a fully static, byte-wide parallel memory with standard CE/OE/WE control logic and 17 address lines (A0–A16). No external support circuitry is required for microprocessor interfacing, and it supports unlimited write cycles without wear leveling or erase overhead.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	1024 kbit (131,072 × 8) - provides full byte-accessible nonvolatile storage matching legacy 128k×8 SRAM footprint
Access Time	70 ns - ensures compatibility with 14 MHz bus systems and eliminates wait states in most 8/16-bit microcontrollers
V_CC Range	4.5 V to 5.5 V (±10%) - supports wide-input industrial power rails without regulation
Data Retention	≥10 years without power - enabled by internal lithium cell and freshness seal disconnect until first power-up
Operating Temp	-40°C to +85°C (IND grade) - qualified for uncontrolled industrial environments including factory automation and metering
Write Protection Threshold	4.25 V - initiates automatic write lock and battery switchover before critical logic-level failure
Package	32-pin JEDEC 740-mil Extended DIP - direct socket replacement for existing 32-pin SRAM designs

Pinout & Package

DS1245Y-85 uses a JEDEC-standard 32-pin 740-mil Extended Dual In-line Package (EDIP) with integrated lithium battery and control circuitry. The package is wave-solderable only (not reflow-compatible).

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit address bus supporting full 131,072-word addressing; TTL-compatible inputs
DQ0–DQ7	Data I/O	Bi-directional 8-bit data bus; high-impedance on deselect or power-down
CE	Chip Enable	Active-low chip select; controls device activation and write-protection entry timing
WE	Write Enable	Active-low write strobe; combined with CE to define write cycle start/stop
OE	Output Enable	Active-low output enable; allows read data gating independent of CE
V_CC	Power Supply	+5 V supply input; powers SRAM core and monitoring circuitry; battery disconnects until first valid V_CC
GND	Ground	Reference return path for all signals and internal circuitry
NC	No Connect	Unbonded pins (pins 1, 2, 3, 33, 34); no internal connection or function

Key Features

Feature	Design Value
Automatic Power-Fail Response	Switches to lithium backup and locks writes within 1.5 µs of V_CC falling below 4.25 V - prevents corruption during brownout or sudden shutdown
Freshness Seal	Lithium cell remains electrically disconnected until first V_CC > 4.25 V - guarantees full 10-year retention capacity at installation
Unlimited Write Cycles	No endurance limit - eliminates wear-out concerns in high-frequency logging or configuration storage applications
Full ±10% V_CC Operation	Functional across 4.5 V–5.5 V - removes need for tight-regulation LDOs in cost-sensitive industrial designs
Standard Pinout Compatibility	JEDEC 32-pin DIP layout matches 128k×8 SRAMs - enables drop-in replacement without PCB revision

Applications

Industrial Data Logger	Legacy System Memory Upgrade
Use Scenario: Continuous timestamped sensor readings stored during mains power outage in factory floor PLCs. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate, byte-addressable storage with zero latency on power fail. Use Value: Guarantees 10-year retention of critical operational history without external battery management or EEPROM write delays.	Use Scenario: Replacing obsolete 128k×8 volatile SRAM in vintage CNC controllers where firmware expects uninterrupted memory. IC Role / Device Role / Timing Role: Drop-in SRAM replacement with identical pinout, timing, and interface behavior - no software or hardware changes required. Use Value: Eliminates redesign effort while adding battery-backed data persistence for configuration and runtime variables.
Smart Electricity Meter	Medical Device Event Recorder
Use Scenario: Storing tariff-switching events, consumption snapshots, and tamper logs in utility meters operating across wide ambient temperatures. IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +85°C), low-power NV SRAM with guaranteed 10-year data hold in battery-backup mode. Use Value: Meets IEC 62056 compliance requirements for long-term, unattended data integrity without periodic refresh or maintenance.	Use Scenario: Capturing ECG waveform segments and alarm timestamps in portable diagnostic devices during unexpected power loss. IC Role / Device Role / Timing Role: High-reliability, zero-write-cycle-limit memory for time-critical clinical event buffering. Use Value: Ensures complete capture of pre-event data even during abrupt AC dropout - critical for FDA Class II device validation.

Industrial Data Logger

Legacy System Memory Upgrade

Use Scenario: Continuous timestamped sensor readings stored during mains power outage in factory floor PLCs.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate, byte-addressable storage with zero latency on power fail.

Use Value: Guarantees 10-year retention of critical operational history without external battery management or EEPROM write delays.

Use Scenario: Replacing obsolete 128k×8 volatile SRAM in vintage CNC controllers where firmware expects uninterrupted memory.

IC Role / Device Role / Timing Role: Drop-in SRAM replacement with identical pinout, timing, and interface behavior - no software or hardware changes required.

Use Value: Eliminates redesign effort while adding battery-backed data persistence for configuration and runtime variables.

Smart Electricity Meter

Medical Device Event Recorder

Use Scenario: Storing tariff-switching events, consumption snapshots, and tamper logs in utility meters operating across wide ambient temperatures.

IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +85°C), low-power NV SRAM with guaranteed 10-year data hold in battery-backup mode.

Use Value: Meets IEC 62056 compliance requirements for long-term, unattended data integrity without periodic refresh or maintenance.

Use Scenario: Capturing ECG waveform segments and alarm timestamps in portable diagnostic devices during unexpected power loss.

IC Role / Device Role / Timing Role: High-reliability, zero-write-cycle-limit memory for time-critical clinical event buffering.

Use Value: Ensures complete capture of pre-event data even during abrupt AC dropout - critical for FDA Class II device validation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1245AB-70IND+	Narrower V_CC tolerance (±5%, 4.75–5.25 V); same 70 ns speed, -40°C to +85°C rating, and 32-pin DIP	Requires tighter regulated 5 V supply; preferred where power rail stability is assured and higher noise immunity is needed	Select DS1245AB-70IND+ if system uses precision 5 V regulation and demands stricter V_CC noise margin over DS1245Y-85's wider range
STK12C68-AW50I	Same 1024k size, 50 ns access, -40°C to +85°C, but uses external capacitor-based backup (no integrated lithium)	Lacks guaranteed 10-year retention; requires external capacitor charging circuit and periodic refresh supervision	Choose STK12C68-AW50I only if design already includes capacitor backup infrastructure and lower BOM cost outweighs retention reliability

Compared with DS1245AB-70IND+, DS1245Y-85 trades tighter V_CC tolerance for broader supply flexibility; compared with STK12C68-AW50I, it delivers superior long-term data integrity via integrated lithium and automatic power-fail response - eliminating external backup components and qualification risk.

Availability

DS1245Y-85 is available at Aetrix Electronics and suitable for industrial data loggers, legacy system memory upgrades, and smart metering applications requiring stable component supply, long-lifecycle support, and guaranteed 10-year data retention under intermittent power conditions.

Supply support for DS1245Y-85 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in high-performance analog, mixed-signal, and power management ICs for industrial, automotive, and communications markets.

The DS1245Y-85 belongs to Maxim's nonvolatile SRAM product line, designed specifically to replace volatile memory in systems where data persistence during power loss is mission-critical - targeting industrial control, instrumentation, and legacy equipment modernization.

FAQ

What is the guaranteed data retention period for DS1245Y-85?

The DS1245Y-85 guarantees ≥10 years of data retention in the absence of external power, measured from the time V_CC is first applied and the internal lithium energy source is activated. This specification is ensured by component selection, process control, and design - not production-tested per unit, but statistically assured across the manufacturing lot.

Does DS1245Y-85 require external circuitry for battery backup operation?

No, DS1245Y-85 requires no external circuitry for battery backup operation. It integrates a lithium energy source, voltage-monitoring logic, and power-switching circuitry into the 32-pin DIP package. The "freshness seal" keeps the battery disconnected until first power-up, and automatic switchover occurs below 4.25 V without user intervention.

Is DS1245Y-85 compatible with standard 128k×8 SRAM sockets?

Yes, DS1245Y-85 uses a JEDEC-standard 32-pin 740-mil Extended DIP package with pinout identical to industry-standard 128k×8 SRAMs. It supports the same address (A0–A16), data (DQ0–DQ7), and control (CE/OE/WE) signals - enabling true drop-in replacement without PCB or firmware modification.

What is the operating temperature range specified for DS1245Y-85?

The DS1245Y-85 is rated for industrial temperature operation from –40°C to +85°C, as indicated by the "IND" suffix in its full ordering code (e.g., DS1245Y-70IND+). All DC and AC electrical specifications, including 70 ns access time and write protection threshold, are guaranteed across this full range.

How does DS1245Y-85 handle power-down and power-up transitions?

During power-down, DS1245Y-85 detects V_CC decay below 4.25 V within 1.5 µs, disables all inputs, places outputs in high-impedance, and switches to lithium backup. At power-up, it reconnects V_CC to the SRAM core once V_CC exceeds ~3.0 V and exits write protection after 125 ms - ensuring clean, corruption-free resumption of normal operation.

DS1245Y-85 Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 32-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 1Mbit

Memory Organization:: 128K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 85ns

Access Time:: 85 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 32-EDIP

DS1245Y-85 FAQ

1.How can I place an order for DS1245Y-85 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1245Y-85 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1245Y-85 reliable?

The price and inventory of DS1245Y-85 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1245Y-85 is usually 5 days.

3.What payment methods are accepted for DS1245Y-85?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1245Y-85 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1245Y-85?

DS1245Y-85 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1245Y-85 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1245Y-85?

For technical support, including DS1245Y-85 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1245Y-85 requirements.

6.How does Aetrix verify that DS1245Y-85 is sourced from the original manufacturer or authorized distributors?

All DS1245Y-85 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1245Y-85 meets industry standards.

7.What is the process for return or replacement of DS1245Y-85?

All DS1245Y-85 units undergo pre-shipment inspection (PSI). If there is an issue with DS1245Y-85, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1245Y-85 part is unused and in its original packaging.

Return procedure for DS1245Y-85:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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