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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1249Y-100

Name: DS1249Y-100
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1249Y-100
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1249Y-100

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 32-DIP Module (0.600", 15.24mm)

Datasheet:: DS1249Y-100.pdf

Description:: IC NVSRAM 2MBIT PARALLEL 32EDIP

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Inventory:3,735

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Product details

Overview

DS1249Y-100 from Maxim Integrated is a 2048k (2,097,152-bit) nonvolatile static RAM organized as 262,144 × 8, featuring lithium-backed data retention, 70 ns read/write access time, ±10% V_CC operation (4.5V–5.5V), and JEDEC-standard 32-pin extended DIP packaging. It operates as a drop-in SRAM replacement with automatic power-fail write protection in industrial and embedded memory subsystems.

For engineers reviewing the DS1249Y-100 datasheet, DS1249Y-100 pinout, DS1249Y-100 application, or DS1249Y-100 equivalent, key selection criteria include guaranteed 10-year data retention without external power, full V_CC tolerance compliance, battery-freshness seal activation on first power-up, and compatibility with standard microprocessor bus timing.

Technical Context

The DS1249Y-100 integrates a self-contained lithium energy source and voltage-monitoring circuitry that triggers unconditional write protection when V_CC falls below 4.25 V, switching to battery backup at ~3.0 V. Its CMOS architecture supports unlimited write cycles and eliminates need for external support circuitry.

It implements standard asynchronous SRAM interface logic: read mode requires CE and OE low with WE high; write mode requires CE and WE low while OE is high. Address inputs A0–A17 and bidirectional data lines DQ0–DQ7 conform to JEDEC 32-pin DIP pinout, with NC on Pin 16.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	2,097,152-bit (262,144 × 8) - provides byte-addressable NV SRAM capacity matching standard 256KB memory maps
Access Time	70 ns - ensures compatibility with 14 MHz bus timing without wait states
V_CC Range	4.5 V to 5.5 V (±10%) - supports wide-input power rails common in legacy industrial systems
Data Retention	10 years minimum without power - enabled by sealed lithium cell and automatic V_CC monitoring
Write Protection Threshold	V_TP = 4.25 V to 4.5 V - initiates hardware lockout before brownout-induced corruption
Operating Temperature	0°C to +70°C - commercial-grade thermal rating per ordering code DS1249Y-100 (non-IND)
Package	32-pin 740-mil extended DIP - through-hole mounting compatible with legacy PCB layouts and wave soldering

Pinout & Package

DS1249Y-100 uses a JEDEC-standard 32-pin extended dual in-line package (EDIP), 740 mil width, with lead finish compliant to RoHS exemptions. Pin 16 is No Connect (NC); all other pins follow industry-standard SRAM interface mapping.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit address bus supporting full 262,144-word addressing; TTL/CMOS compatible
DQ0–DQ7	Bidirectional Data I/O	8-bit parallel data path; high-impedance during deselect or write to prevent bus contention
CE	Chip Enable	Active-low chip select; must be stable before address setup; controls device enable/disable state
WE	Write Enable	Active-low write strobe; falling edge initiates write cycle; disables outputs when asserted
OE	Output Enable	Active-low output control; enables data drivers only during read; must be high during writes
V_CC	Power Supply	+5 V supply with ±10% tolerance; powers logic and enables lithium switch-on at first power application
GND	Ground Reference	Signal and power return; decoupling required within 1 inch of V_CC pin per layout guidelines
NC	No Connect	Pin 16 is unconnected internally; must remain floating or grounded per board design rules

Key Features

Feature	Design Value
Lithium freshness seal	Energy source remains electrically disconnected until first V_CC application > V_TP, preserving full 10-year retention capacity
Automatic V_CC monitoring	Dedicated circuitry detects decay below 4.25 V and forces write protection within 1.5 µs, preventing partial writes
Unlimited write endurance	No wear-out mechanism - no erase cycles or gate oxide stress; suitable for logging applications with frequent updates
Low-power standby	100–150 µA ICCS2 current when CE = V_CC–0.5 V - enables battery-backed operation with minimal drain
Full ±10% V_CC range	Operates across 4.5 V–5.5 V without derating - accommodates aging supplies and line regulation drift

Applications

Industrial PLC Data Logging	Military Avionics Configuration Storage
Use Scenario: Storing real-time sensor calibration tables and operational logs in programmable logic controllers subject to intermittent mains failure. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-read/write access with zero software overhead and guaranteed retention during 100+ ms brownouts. Use Value: Eliminates need for EEPROM write delays or flash wear-leveling; retains data for ≥10 years without refresh or backup power management firmware.	Use Scenario: Holding flight-critical configuration parameters (e.g., trim settings, navigation offsets) in airborne computing modules where power interruption may occur during engine start or turbulence. IC Role / Device Role / Timing Role: Hardware-protected memory element that locks writes autonomously at 4.25 V and switches to lithium backup at ~3.0 V. Use Value: Meets DO-160 Section 22 surge/brownout requirements without external supervisors or capacitors; supports MIL-STD-704F transient profiles.
Medical Diagnostic Equipment Memory	Telecom Base Station Real-Time Clock Backup
Use Scenario: Preserving patient session data and diagnostic algorithm state in portable ultrasound or ECG units during battery swaps or AC loss. IC Role / Device Role / Timing Role: Drop-in SRAM replacement interfacing directly to ARM9 or ColdFire microcontrollers via standard 8-bit bus. Use Value: Enables seamless session continuity with <70 ns latency and no firmware intervention - critical for FDA Class II device reliability validation.	Use Scenario: Backing up RTC registers and network synchronization timestamps in LTE macrocell baseband processors during grid outages. IC Role / Device Role / Timing Role: Nonvolatile storage co-located with DS1307/DS3231 RTC ICs, sharing same V_CC rail and monitored by identical voltage threshold. Use Value: Maintains precise time-of-day and frame alignment metadata for 10+ years without periodic NTP resync dependency or supercapacitor maintenance.

Industrial PLC Data Logging

Military Avionics Configuration Storage

Use Scenario: Storing real-time sensor calibration tables and operational logs in programmable logic controllers subject to intermittent mains failure.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-read/write access with zero software overhead and guaranteed retention during 100+ ms brownouts.

Use Value: Eliminates need for EEPROM write delays or flash wear-leveling; retains data for ≥10 years without refresh or backup power management firmware.

Use Scenario: Holding flight-critical configuration parameters (e.g., trim settings, navigation offsets) in airborne computing modules where power interruption may occur during engine start or turbulence.

IC Role / Device Role / Timing Role: Hardware-protected memory element that locks writes autonomously at 4.25 V and switches to lithium backup at ~3.0 V.

Use Value: Meets DO-160 Section 22 surge/brownout requirements without external supervisors or capacitors; supports MIL-STD-704F transient profiles.

Medical Diagnostic Equipment Memory

Telecom Base Station Real-Time Clock Backup

Use Scenario: Preserving patient session data and diagnostic algorithm state in portable ultrasound or ECG units during battery swaps or AC loss.

IC Role / Device Role / Timing Role: Drop-in SRAM replacement interfacing directly to ARM9 or ColdFire microcontrollers via standard 8-bit bus.

Use Value: Enables seamless session continuity with <70 ns latency and no firmware intervention - critical for FDA Class II device reliability validation.

Use Scenario: Backing up RTC registers and network synchronization timestamps in LTE macrocell baseband processors during grid outages.

IC Role / Device Role / Timing Role: Nonvolatile storage co-located with DS1307/DS3231 RTC ICs, sharing same V_CC rail and monitored by identical voltage threshold.

Use Value: Maintains precise time-of-day and frame alignment metadata for 10+ years without periodic NTP resync dependency or supercapacitor maintenance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STK12C68-70	5V ±5% V_CC range (4.75–5.25 V); 10-year retention; same 32-pin DIP but no freshness seal	Lacks automatic first-power lithium activation; requires pre-charged backup cap or external supervisor for brownout response	Select when system already includes discrete voltage monitor and capacitor-based hold-up
DS1225Y-100	256k (32KB) capacity; identical V_CC range, pinout, and retention; smaller footprint	Insufficient memory depth for full configuration tables or multi-channel log buffers	Select when application requires only parameter storage and board space is constrained

Compared with STK12C68-70 and DS1225Y-100, DS1249Y-100 uniquely delivers 256KB capacity with ±10% supply tolerance and factory-sealed lithium readiness - enabling simpler, more robust designs in cost-sensitive industrial equipment where long-term data integrity is mandatory.

Availability

DS1249Y-100 is available at Aetrix Electronics and suitable for industrial PLC data logging, military avionics configuration storage, and medical diagnostic equipment memory requiring stable component supply and guaranteed 10-year data retention without external power.

Supply support for DS1249Y-100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in analog, mixed-signal, and high-reliability ICs for industrial, automotive, and communications markets.

The DS1249Y-100 belongs to Maxim's nonvolatile SRAM product line, designed specifically for applications demanding seamless, hardware-governed data retention during unpredictable power loss - eliminating reliance on software-controlled save routines or external backup components.

FAQ

What is the guaranteed data retention period for DS1249Y-100 under zero-power conditions?

The DS1249Y-100 guarantees a minimum 10-year data retention period when powered off, based on component selection, process control, and design assurance - not production-tested per unit. This retention begins at first V_CC application and accumulates only during absence of external power, enabled by its sealed lithium energy source and automatic V_CC monitoring circuitry in the DS1249Y-100.

Does DS1249Y-100 require external circuitry to function as nonvolatile memory?

No, the DS1249Y-100 requires no external support circuitry. Its integrated lithium energy source, voltage monitor, and power-switching logic operate autonomously. The DS1249Y-100 automatically enables battery backup when V_CC drops below ~3.0 V and disables it upon power restoration above 4.5 V - all without external components or firmware intervention.

What is the meaning of "Y" in DS1249Y-100 and how does it affect V_CC operation?

The "Y" suffix in DS1249Y-100 denotes ±10% V_CC tolerance (4.5 V to 5.5 V), distinguishing it from the "AB" variant (±5%). This wider range allows the DS1249Y-100 to operate reliably across degraded or loosely regulated 5 V supplies common in legacy industrial systems, with write protection triggered at 4.25 V instead of 4.5 V.

Can DS1249Y-100 be used in place of standard SRAMs without modifying existing PCB layouts?

Yes, the DS1249Y-100 uses a JEDEC-standard 32-pin extended DIP package with identical pinout to conventional 256KB SRAMs. Its electrical interface (A0–A17, DQ0–DQ7, CE, WE, OE, V_CC, GND) matches industry norms, allowing direct replacement on existing boards - provided V_CC remains within 4.5 V–5.5 V and no NC pin is actively driven.

How does the DS1249Y-100 handle simultaneous CE and WE transitions during write cycles?

The DS1249Y-100 defines write initiation by the later-occurring falling edge of CE or WE, and termination by the earlier rising edge. If CE and WE fall simultaneously, the DS1249Y-100 enters write mode; if CE rises before WE, outputs remain high-impedance. These behaviors are fully specified in the AC Electrical Characteristics table and ensure deterministic bus timing under all valid signal combinations.

DS1249Y-100 Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 32-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 2Mbit

Memory Organization:: 256K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 100ns

Access Time:: 100 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 32-EDIP

DS1249Y-100 FAQ

1.How can I place an order for DS1249Y-100 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1249Y-100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1249Y-100 reliable?

The price and inventory of DS1249Y-100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1249Y-100 is usually 5 days.

3.What payment methods are accepted for DS1249Y-100?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1249Y-100 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1249Y-100?

DS1249Y-100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1249Y-100 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1249Y-100?

For technical support, including DS1249Y-100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1249Y-100 requirements.

6.How does Aetrix verify that DS1249Y-100 is sourced from the original manufacturer or authorized distributors?

All DS1249Y-100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1249Y-100 meets industry standards.

7.What is the process for return or replacement of DS1249Y-100?

All DS1249Y-100 units undergo pre-shipment inspection (PSI). If there is an issue with DS1249Y-100, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1249Y-100 part is unused and in its original packaging.

Return procedure for DS1249Y-100:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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