Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1249Y-70IND

Name: DS1249Y-70IND
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1249Y-70IND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: DS1249Y-70IND

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 32-DIP Module (0.600", 15.24mm)

Datasheet:: DS1249Y-70IND.pdf

Description:: IC NVSRAM 2MBIT PARALLEL 32EDIP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,819

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

DS1249Y-70IND from Maxim Integrated is a 2048k (2,097,152-bit) nonvolatile static RAM organized as 262,144 × 8, featuring 70 ns read/write access time, ±10% V_CC tolerance (4.5V–5.5V), and industrial temperature operation (–40°C to +85°C). It integrates a lithium energy source and automatic power-fail write protection for data retention without external support circuitry, used in mission-critical memory backup applications such as industrial PLCs and telecom base station configuration storage.

For engineers reviewing the DS1249Y-70IND datasheet, DS1249Y-70IND pinout, DS1249Y-70IND application, or DS1249Y-70IND equivalent, key selection considerations include its self-contained battery-backed architecture, JEDEC-standard 32-pin extended DIP package, guaranteed 10-year data retention, and compatibility with standard SRAM bus protocols in legacy embedded systems requiring zero-data-loss power cycling.

Technical Context

The DS1249Y-70IND implements a fully static NV SRAM core with integrated voltage-monitoring logic that triggers automatic write protection when V_CC falls below 4.25 V (V_TP) and switches to lithium backup at ~3.0 V. Its control interface uses standard CE/WE/OE signals with t_ACC = 70 ns and t_WC = 70 ns, supporting asynchronous microprocessor interfacing without wait states.

Unlike volatile SRAMs or EEPROM-based alternatives, the DS1249Y-70IND provides unlimited write cycles and eliminates wear leveling or erase latency. Its lithium cell remains electrically disconnected until first power application, preserving full capacity-ensuring 10-year data retention measured from initial V_CC application under specified conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2,097,152 bits (262,144 × 8), enabling direct replacement of 256KB volatile SRAMs without address decoding changes
Access Time	70 ns read/write - supports 14.3 MHz bus timing with no wait states on legacy 8/16-bit microcontrollers
V_CC Range	4.5 V to 5.5 V (±10%) - accommodates wide-tolerance industrial power rails without regulation
Data Retention	10 years minimum without external power - verified by design and process control, not production-tested per unit
Operating Temp	–40°C to +85°C (IND grade) - qualified for uncontrolled industrial enclosures and outdoor telecom cabinets
Write Protection Threshold	V_TP = 4.25 V (min) - initiates automatic lockout before brownout corrupts active writes
Package	32-pin 740-mil extended DIP - compatible with through-hole PCB assembly and socketed legacy system upgrades

Pinout & Package

DS1249Y-70IND is housed in a JEDEC-standard 32-pin Extended Dual In-line Package (EDIP), 740 mil width, with 0.1" lead pitch and wave/hand-solderable leads.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit address bus supporting full 262,144-word addressing; TTL-compatible inputs
DQ0–DQ7	Data I/O	8-bit bidirectional data bus; high-impedance during deselect or write cycles to prevent bus contention
CE	Chip Enable	Active-low chip select; must be stable before address setup; controls device enable/disable state
WE	Write Enable	Active-low write strobe; falling edge initiates write cycle; output drivers disabled when asserted
OE	Output Enable	Active-low output control; enables data drivers only during read cycles when CE is also low
V_CC	Power Supply	+5 V supply input; powers SRAM core and monitoring circuitry; lithium disconnects when V_CC < ~3.0 V
GND	Ground	Reference return path for all signals and internal circuitry
NC	No Connect	Pin 16 is unconnected internally; must remain floating or tied to GND per layout guidelines

Key Features

Feature	Design Value
Self-contained lithium backup	Eliminates need for external battery management ICs, diodes, or charge circuits - reduces BOM count and board space
Automatic V_CC monitoring & write protect	Hardware-level response within 1.5 µs of V_CC failure - prevents partial writes and ensures atomic data preservation
Unlimited write endurance	Supports continuous logging or real-time parameter updates without lifetime degradation - unlike flash or EEPROM
Freshness seal	Lithium cell remains disconnected until first V_CC application > V_TP, guaranteeing full energy capacity at deployment
Full ±10% V_CC operation	Operates across 4.5–5.5 V without external regulators - simplifies power design in noisy industrial environments

Applications

Industrial PLC Configuration Storage	Telecom Base Station Parameter Backup
Use Scenario: Storing firmware configuration, calibration tables, and operational logs in programmable logic controllers deployed in factory automation lines. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-read, byte-addressable memory with zero write latency and guaranteed retention during mains outages. Use Value: Eliminates boot-time reinitialization and prevents loss of machine-specific settings after unexpected shutdowns.	Use Scenario: Preserving radio channel assignments, encryption keys, and site-specific RF parameters in cellular base transceiver stations. IC Role / Device Role / Timing Role: Battery-backed memory holding critical runtime data accessible within 70 ns during rapid failover or warm restart. Use Value: Enables sub-second service recovery without network re-synchronization or manual reconfiguration.
Military Vehicle Avionics Logging	Medical Diagnostic Equipment Calibration Memory
Use Scenario: Recording flight-critical sensor timestamps and fault codes in ruggedized vehicle control units operating across –40°C to +85°C. IC Role / Device Role / Timing Role: Industrial-grade NV SRAM delivering deterministic 70 ns access and 10-year retention under thermal cycling and vibration stress. Use Value: Meets DO-160 environmental compliance requirements without supplemental thermal management or backup batteries.	Use Scenario: Storing patient-specific calibration coefficients and diagnostic thresholds in portable ultrasound and ECG devices. IC Role / Device Role / Timing Role: High-reliability memory retaining traceable calibration data across device power cycles and battery replacements. Use Value: Ensures regulatory-compliant data integrity and eliminates recalibration delays during clinical use.

Industrial PLC Configuration Storage

Telecom Base Station Parameter Backup

Use Scenario: Storing firmware configuration, calibration tables, and operational logs in programmable logic controllers deployed in factory automation lines.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-read, byte-addressable memory with zero write latency and guaranteed retention during mains outages.

Use Value: Eliminates boot-time reinitialization and prevents loss of machine-specific settings after unexpected shutdowns.

Use Scenario: Preserving radio channel assignments, encryption keys, and site-specific RF parameters in cellular base transceiver stations.

IC Role / Device Role / Timing Role: Battery-backed memory holding critical runtime data accessible within 70 ns during rapid failover or warm restart.

Use Value: Enables sub-second service recovery without network re-synchronization or manual reconfiguration.

Military Vehicle Avionics Logging

Medical Diagnostic Equipment Calibration Memory

Use Scenario: Recording flight-critical sensor timestamps and fault codes in ruggedized vehicle control units operating across –40°C to +85°C.

IC Role / Device Role / Timing Role: Industrial-grade NV SRAM delivering deterministic 70 ns access and 10-year retention under thermal cycling and vibration stress.

Use Value: Meets DO-160 environmental compliance requirements without supplemental thermal management or backup batteries.

Use Scenario: Storing patient-specific calibration coefficients and diagnostic thresholds in portable ultrasound and ECG devices.

IC Role / Device Role / Timing Role: High-reliability memory retaining traceable calibration data across device power cycles and battery replacements.

Use Value: Ensures regulatory-compliant data integrity and eliminates recalibration delays during clinical use.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1249AB-70IND	Narrower V_CC range (4.75–5.25 V); higher V_TP (4.50 V min); tighter ±5% tolerance	Better suited for regulated 5 V systems where voltage stability is guaranteed; less tolerant of rail droop	Select DS1249AB-70IND if power supply ripple is < ±2.5% and brownout risk is mitigated by upstream supervision
STK12C68-AW50I	50 ns access time; 64K × 8 density; different pinout (28-pin SOIC); requires external capacitor for reset timing	Higher speed but lower density; surface-mount only; lacks integrated freshness seal and same V_TP behavior	Choose STK12C68-AW50I only for space-constrained designs accepting trade-offs in retention assurance and through-hole compatibility

Compared with DS1249AB-70IND and STK12C68-AW50I, the DS1249Y-70IND uniquely balances wide-voltage operation, industrial temperature rating, and plug-compatible DIP packaging-making it optimal for retrofitting legacy systems where power rail variation and mechanical upgrade constraints dominate selection criteria.

Availability

DS1249Y-70IND is available at Aetrix Electronics and suitable for industrial PLCs, telecom base stations, military avionics, and medical diagnostic equipment requiring stable component supply across long product lifecycles and extreme environmental conditions.

Supply support for DS1249Y-70IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and nonvolatile memory solutions for industrial, automotive, and communications markets.

The DS1249Y-70IND belongs to Maxim's legacy NV SRAM product line, engineered specifically for zero-data-loss memory backup in systems lacking external battery management or supervision circuitry.

FAQ

What is the guaranteed data retention period for DS1249Y-70IND?

The DS1249Y-70IND guarantees a minimum 10-year data retention period in the absence of external power, measured cumulatively from the time V_CC is first applied. This specification is assured by component selection, process control, and design-not production-tested per unit-and assumes operation within the industrial temperature range (–40°C to +85°C).

Does DS1249Y-70IND require external components for battery backup operation?

No, the DS1249Y-70IND does not require external components for battery backup operation. It integrates a lithium energy source and power-switching circuitry that automatically engages when V_CC drops below ~3.0 V. The lithium cell remains disconnected until first power application, ensuring full capacity at deployment-no capacitors, diodes, or supervisors are needed.

What is the V_TP threshold for write protection activation in DS1249Y-70IND?

The DS1249Y-70IND activates automatic write protection when V_CC falls below V_TP = 4.25 V (minimum), with typical value 4.37 V and maximum 4.50 V. This threshold ensures early lockout before brownout conditions corrupt active memory writes, and is distinct from the DS1249AB-70IND's higher 4.50 V minimum V_TP.

Is DS1249Y-70IND pin-compatible with standard 32-pin SRAMs?

Yes, the DS1249Y-70IND uses a JEDEC-standard 32-pin extended DIP footprint (740-mil width) with identical pinout to industry-standard 256KB SRAMs like the AS6C4008 or IS61LV25616. Address (A0–A17), data (DQ0–DQ7), and control (CE/WE/OE/V_CC/GND) assignments match conventional parallel SRAM interfaces-enabling drop-in replacement in existing layouts.

How does DS1249Y-70IND handle power-up sequencing and V_CC ramp rates?

During power-up, the DS1249Y-70IND requires V_CC to rise above ~3.0 V before switching from lithium to external supply; full functional operation resumes once V_CC exceeds 4.5 V. The device tolerates monotonic V_CC ramps as slow as 150 µs (from 0 V to V_TP) and imposes no minimum slew rate-supporting unregulated supplies and soft-start controllers without additional sequencing logic.

DS1249Y-70IND Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 32-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 2Mbit

Memory Organization:: 256K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 32-EDIP

DS1249Y-70IND FAQ

1.How can I place an order for DS1249Y-70IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1249Y-70IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1249Y-70IND reliable?

The price and inventory of DS1249Y-70IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1249Y-70IND is usually 5 days.

3.What payment methods are accepted for DS1249Y-70IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1249Y-70IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1249Y-70IND?

DS1249Y-70IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1249Y-70IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1249Y-70IND?

For technical support, including DS1249Y-70IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1249Y-70IND requirements.

6.How does Aetrix verify that DS1249Y-70IND is sourced from the original manufacturer or authorized distributors?

All DS1249Y-70IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1249Y-70IND meets industry standards.

7.What is the process for return or replacement of DS1249Y-70IND?

All DS1249Y-70IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1249Y-70IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1249Y-70IND part is unused and in its original packaging.

Return procedure for DS1249Y-70IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …