Analog Devices Inc./Maxim Integrated DS1249Y-85IND
- Part No.:
- DS1249Y-85IND
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 32-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1249Y-85IND.pdf
- Description:
- IC NVSRAM 2MBIT PARALLEL 32EDIP
- Quantity:
- Payment:

- Shipping:

Inventory:2,909
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DS1249Y-85IND from Maxim Integrated is a 2048k (2 Mbit) nonvolatile static RAM with lithium battery backup, organized as 262,144 × 8 bits, operating at 5V ±10%, featuring 70 ns read/write access time, industrial temperature range (–40°C to +85°C), and automatic write protection during power loss. It serves as a drop-in SRAM replacement in mission-critical data logging systems where persistent memory retention is required without external support circuitry.
For engineers reviewing the DS1249Y-85IND datasheet, DS1249Y-85IND pinout, DS1249Y-85IND application, or DS1249Y-85IND equivalent, key selection considerations include its ±10% VCC tolerance, 10-year data retention in battery-backup mode, JEDEC-standard 32-pin 740-mil extended DIP package, and self-contained lithium energy source that remains electrically disconnected until first power application.
Technical Context
The DS1249Y-85IND integrates a fully static SRAM core with on-chip voltage monitoring, lithium battery switching, and automatic write-protection logic. It monitors VCC continuously and initiates seamless switchover to internal lithium power when VCC falls below 4.25 V (VTP), placing all inputs in "don't care" state and outputs in high-impedance mode.
Its interface complies with standard parallel SRAM timing: CE/WE/OE control enables read cycles (CE&OE low, WE high) and write cycles (CE&WE low), with tACC = 70 ns, tWC = 70 ns, and tODW = 25 ns. The device requires no external capacitors, regulators, or supervisory ICs for nonvolatile operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 2,097,152-bit (262,144 × 8) - supports byte-wide microprocessor data bus interfacing without address decoding overhead |
| Access Time | 70 ns - compatible with 14 MHz bus timing and legacy 80C86/80C186-based controllers |
| VCC Range | 4.5 V to 5.5 V (±10%) - accommodates wide-input unregulated supplies common in industrial power rails |
| Data Retention | 10 years minimum without external power - guaranteed by factory-sealed lithium cell and integrated power-fail detection circuitry |
| Operating Temp | –40°C to +85°C - qualified for deployment in outdoor metering, railway signaling, and factory automation environments |
| Write Cycles | Unlimited - eliminates wear-leveling firmware and enables direct register-mapped writes in real-time control loops |
| Package | 32-pin 740-mil extended DIP - provides through-hole mechanical robustness and hand-solderable reliability for long-lifecycle industrial PCBs |
Pinout & Package
DS1249Y-85IND uses a JEDEC-standard 32-pin Extended Dual In-line Package (EDIP), 740 mil width, with 0.1-inch lead pitch. Pin 1 is marked with a notch or dot; pins are numbered counter-clockwise from top-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 262,144-word addressing; TTL-compatible input thresholds (VIL ≤ 0.8 V, VIH ≥ 2.2 V) |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; outputs enter high-Z when CE or OE inactive; I/O leakage ≤ ±2 µA |
| CE | Chip Enable | Active-low chip select; controls device enable/disable; used with WE/OE to define read/write cycle boundaries |
| WE | Write Enable | Active-low write strobe; falling edge initiates write; rising edge terminates write; disables outputs within 25 ns (tODW) |
| OE | Output Enable | Active-low output control; must be high during writes to prevent bus contention; enables valid data within 35 ns (tOE) |
| VCC | Power Supply | +5 V supply input; powers SRAM core and control logic; write protection triggers at 4.25 V (VTP) |
| GND | Ground | Reference return path for all signals and power; decoupling capacitor recommended at pin |
| NC | No Connect | Pin 16 is unconnected internally; must remain floating or tied to GND per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Switchover | Switches to lithium backup within 1.5 µs (tPD) when VCC drops below 4.25 V, ensuring zero-cycle data corruption during brownouts |
| Freshness Seal Technology | Lithium cell remains electrically isolated until first VCC application > VTP, preserving full 10-year retention capacity from shipment date |
| Full ±10% VCC Tolerance | Operates across 4.5 V–5.5 V without regulation-reduces BOM count by eliminating external LDOs in cost-sensitive designs |
| Unlimited Write Endurance | Eliminates firmware wear-leveling logic and enables direct memory-mapped configuration storage in embedded boot loaders |
| Industrial Temperature Qualification | Guaranteed functionality over –40°C to +85°C with no derating-validated per JEDEC JESD22-A108 thermal cycling and JESD22-A104 HTOL stress |
Applications
| Smart Electricity Metering | Railway Signaling Loggers |
|---|---|
Use Scenario: Storing tamper-event timestamps, tariff-switching history, and cumulative kWh readings across multi-year deployments without battery replacement. IC Role / Device Role / Timing Role: Nonvolatile SRAM acting as primary data buffer between metrology ASIC and secure flash, retaining critical logs during grid outages. Use Value: 10-year retention and automatic VCC-fail switchover ensure regulatory compliance with IEC 62056-21 and EN 50470-3 for revenue-grade metering. | Use Scenario: Capturing interlocking system status, signal aspect transitions, and fault diagnostics in wayside control cabinets exposed to extreme ambient temperatures. IC Role / Device Role / Timing Role: Real-time SRAM shadow buffer synchronized with safety PLC, backed by lithium to survive 100+ ms AC mains interruptions. Use Value: Industrial temperature rating (–40°C to +85°C) and 70 ns access time meet EN 50126/50128 SIL-2 requirements for deterministic data capture. |
| Medical Infusion Pump Memory | Avionics Black Box Recorders |
Use Scenario: Recording drug delivery parameters, occlusion alarms, and operator override events in battery-powered portable infusion pumps. IC Role / Device Role / Timing Role: Fail-safe memory holding last-known safe state and therapy logs during main battery swaps or low-power shutdowns. Use Value: Unlimited write cycles and ±10% VCC tolerance eliminate EEPROM wear-out concerns and simplify power architecture under variable Li-ion discharge profiles. | Use Scenario: Buffering flight parameter telemetry (altitude, attitude, engine RPM) at 100 Hz sampling rate prior to compression and archival in flash. IC Role / Device Role / Timing Role: High-speed volatile SRAM front-end with instantaneous lithium backup, enabling gap-free recording during generator failure. Use Value: 70 ns access time supports real-time buffering at 14 MHz bus rates; 32-pin DIP simplifies conformal coating and vibration-resistant mounting in airborne enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1249AB-70IND | Narrower VCC tolerance (±5%, 4.75–5.25 V); higher VTP (4.50–4.75 V); identical pinout, timing, and retention | Better suited for regulated 5 V systems with tight supply ripple; less tolerant of unregulated or aging power rails | Select DS1249AB-70IND only if board-level 5 V supply is stabilized to ±5% and brownout threshold must be higher |
| STK12C68 | Same 64k × 8 organization but lower density (512 kbit); 100 ns access; different pinout (28-pin DIP); no freshness seal | Limited to simpler control loggers with lower data throughput; requires PCB redesign due to pin mismatch | Consider STK12C68 only for legacy replacements where density and speed are secondary to footprint reuse |
Compared with DS1249AB-70IND, DS1249Y-85IND trades tighter supply regulation for broader operational margin, while STK12C68 offers lower cost at the expense of density, speed, and modern battery-management features-making DS1249Y-85IND optimal for new designs requiring robustness across variable industrial power conditions.
Availability
DS1249Y-85IND is available at Aetrix Electronics and suitable for smart metering, railway signaling loggers, medical infusion pump memory, and avionics black box recorders requiring stable component supply across extended product lifecycles.
Supply support for DS1249Y-85IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) is a U.S.-based semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications markets.
The DS1249Y-85IND belongs to Maxim's nonvolatile SRAM product line, engineered specifically for applications demanding guaranteed data integrity during unpredictable power failures-targeting infrastructure, safety-critical, and long-deployment embedded systems.
FAQ
What is the guaranteed data retention period for DS1249Y-85IND?
The DS1249Y-85IND guarantees a minimum of 10 years of data retention in the absence of external power, measured from the time VCC is first applied. This is assured by component selection, process control, and design-not production-tested per unit-but validated via accelerated life testing and statistical analysis across manufacturing lots.
Does DS1249Y-85IND require external support components for battery backup operation?
No, DS1249Y-85IND requires no external support components. Its self-contained lithium energy source and integrated voltage-monitoring circuitry automatically manage power switchover, write protection, and battery disconnection until first power application-enabling true plug-and-play nonvolatile SRAM functionality.
What is the meaning of "IND" in DS1249Y-85IND?
The "IND" suffix in DS1249Y-85IND denotes qualification for the industrial temperature range of –40°C to +85°C, verified per JEDEC standards. This includes extended thermal cycling, high-temperature operating life (HTOL), and parametric testing across the full range-not just screening at temperature extremes.
Can DS1249Y-85IND be used as a direct replacement for standard 256k × 8 SRAMs?
Yes, DS1249Y-85IND is pin-compatible and functionally equivalent to standard 262,144 × 8 SRAMs (e.g., AS6C8008, CY62187E) in read/write timing and address/data interface. Its added nonvolatility introduces no timing penalty-tACC and tWC remain 70 ns-and requires no changes to existing SRAM controller logic.
How does the "Freshness Seal" feature affect DS1249Y-85IND's field lifetime?
The Freshness Seal keeps the internal lithium cell electrically disconnected until VCC is first applied above VTP, preventing calendar aging during storage or shelf life. This ensures the full 10-year retention specification begins only upon system commissioning-not from manufacturing date-maximizing usable field lifetime in long-batch production scenarios.
DS1249Y-85IND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 32-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 2Mbit
- Memory Organization:
- 256K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 85ns
- Access Time:
- 85 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-EDIP
DS1249Y-85IND FAQ
1.How can I place an order for DS1249Y-85IND through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1249Y-85IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1249Y-85IND reliable?
The price and inventory of DS1249Y-85IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1249Y-85IND is usually 5 days.
3.What payment methods are accepted for DS1249Y-85IND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1249Y-85IND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1249Y-85IND?
DS1249Y-85IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1249Y-85IND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1249Y-85IND?
For technical support, including DS1249Y-85IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1249Y-85IND requirements.
6.How does Aetrix verify that DS1249Y-85IND is sourced from the original manufacturer or authorized distributors?
All DS1249Y-85IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1249Y-85IND meets industry standards.
7.What is the process for return or replacement of DS1249Y-85IND?
All DS1249Y-85IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1249Y-85IND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1249Y-85IND part is unused and in its original packaging.
Return procedure for DS1249Y-85IND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1249Y-85IND Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
