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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1250AB-100IND+

Name: DS1250AB-100IND+
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1250AB-100IND+
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1250AB-100IND+

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 32-DIP Module (0.600", 15.24mm)

Datasheet:: DS1250AB-100IND+.pdf

Description:: IC NVSRAM 4MBIT PARALLEL 32EDIP

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Product details

Overview

DS1250AB-100IND+ from Maxim Integrated is a 4,194,304-bit (524,288 × 8) nonvolatile static RAM with lithium backup, industrial temperature rating (–40°C to +85°C), ±5% V_CC tolerance (4.75V–5.25V), and 100ns access time. It replaces volatile SRAM, EEPROM, or Flash in mission-critical data logging and real-time control systems where power loss immunity is mandatory.

For engineers reviewing the DS1250AB-100IND+ datasheet, DS1250AB-100IND+ pinout, DS1250AB-100IND+ application, or DS1250AB-100IND+ equivalent, key selection criteria include write-protection voltage threshold (4.50–4.75V), battery-freshness seal behavior, PCM vs. DIP package compatibility, and industrial-grade retention timing under V_CC decay.

Technical Context

The DS1250AB-100IND+ integrates self-contained lithium energy source and voltage-monitoring circuitry that triggers unconditional write protection when V_CC falls below 4.50V and switches to battery power below ~3.0V. Its control logic enforces high-impedance outputs and "don't care" inputs during power-down transitions.

It operates as a byte-wide parallel memory with full static interface timing: CE/WE/OE dual-control read/write protocol, 19 address lines (A0–A18), and 8 bidirectional data lines (DQ0–DQ7). The device requires no external support circuitry for microprocessor interfacing and supports unlimited write cycles without wear leveling.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	4,194,304 bits (524,288 × 8); directly substitutes 512k × 8 SRAMs in existing 32-pin DIP layouts
Access Time	100 ns; guarantees deterministic read/write latency for 10 MHz bus timing budgets
V_CC Range	4.75 V to 5.25 V (±5%); enables stable operation across noisy industrial 5V rails without regulation
Data Retention	10 years minimum without external power; verified by component-level design and process control, not production-tested
Write Protection Threshold	4.50–4.75 V (V_TP); initiates automatic lockout before data corruption occurs during brownout
Operating Temperature	–40°C to +85°C (IND grade); qualified per industrial thermal cycling and storage specifications
Package	32-pin 740-mil extended DIP (EDIP); JEDEC-standard footprint compatible with legacy socketed designs

Pinout & Package

DS1250AB-100IND+ uses a JEDEC-standard 32-pin 740-mil extended DIP (EDIP) package with integrated lithium battery and nonvolatile control circuitry. No external PowerCap required - all backup functionality is self-contained within the monolithic module.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	19-bit address bus supporting full 524,288-word addressing; TTL-compatible input thresholds
DQ0–DQ7	Data I/O	Bidirectional 8-bit data bus; high-impedance on deselect or during write protection activation
CE	Chip Enable	Active-low chip select; combined with WE/OE to define read/write cycle boundaries and power-down entry
WE	Write Enable	Active-low write strobe; falling edge (with CE) initiates write; rising edge defines recovery timing (t_WR)
OE	Output Enable	Active-low output control; disables drivers during writes to prevent bus contention
V_CC	Power Supply	+5V supply input; monitored continuously for out-of-tolerance detection and automatic backup switchover
GND	Ground	Reference return path for all signals and internal battery switching circuitry
NC	No Connect	Unbonded pin; must remain unconnected to avoid interference with internal voltage monitoring

Key Features

Feature	Design Value
Lithium freshness seal	Energy source electrically disconnected until first V_CC > 4.25V applied; ensures full 10-year retention capacity at installation
Automatic write protection	Unconditional lockout triggered at V_TP = 4.50–4.75V; prevents partial writes during brownout without software intervention
Zero-cycle wear limitation	Unlimited write endurance; eliminates EEPROM/Flash wear-leveling firmware overhead and failure prediction
Self-contained backup power	Integrated lithium cell and analog switch eliminate external battery holders, charging ICs, or backup diodes
Industrial-grade reliability	Qualified over –40°C to +85°C with 150 µs V_CC slew rate tolerance and UL E99151 recognition

Applications

Industrial Data Logger	Medical Device Memory
Use Scenario: Continuous acquisition of sensor readings in remote environmental monitors with intermittent mains power and battery backup. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing timestamped measurements during AC outage; retains data across 10-year field deployment. Use Value: Eliminates need for EEPROM write-delay polling or Flash erase cycles, enabling sub-millisecond data capture even during power transition.	Use Scenario: Storing calibration coefficients, patient history, and fault logs in portable diagnostic equipment subject to frequent power cycling. IC Role / Device Role / Timing Role: Primary working memory with guaranteed retention during battery swaps or unplanned shutdowns. Use Value: Ensures regulatory-compliant data integrity without host MCU intervention or external supervision circuits.
Avionics Black Box Recorder	Programmable Logic Controller (PLC)
Use Scenario: Capturing flight parameters in commercial aircraft recorders where power interruption may occur during crash impact or system reset. IC Role / Device Role / Timing Role: Crash-survivable memory buffer holding last 30 minutes of telemetry prior to event. Use Value: Meets DO-160E Section 22 crash survivability requirements via autonomous V_CC monitoring and <3.0V battery switchover.	Use Scenario: Holding ladder logic state, I/O mapping, and configuration in factory-floor PLCs exposed to voltage sags and EMI. IC Role / Device Role / Timing Role: Volatile SRAM replacement preserving runtime context during 200 ms brownouts typical in industrial power distribution. Use Value: Prevents machine re-homing or sequence restart after brief outages, reducing downtime and scrap.

Industrial Data Logger

Medical Device Memory

Use Scenario: Continuous acquisition of sensor readings in remote environmental monitors with intermittent mains power and battery backup.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing timestamped measurements during AC outage; retains data across 10-year field deployment.

Use Value: Eliminates need for EEPROM write-delay polling or Flash erase cycles, enabling sub-millisecond data capture even during power transition.

Use Scenario: Storing calibration coefficients, patient history, and fault logs in portable diagnostic equipment subject to frequent power cycling.

IC Role / Device Role / Timing Role: Primary working memory with guaranteed retention during battery swaps or unplanned shutdowns.

Use Value: Ensures regulatory-compliant data integrity without host MCU intervention or external supervision circuits.

Avionics Black Box Recorder

Programmable Logic Controller (PLC)

Use Scenario: Capturing flight parameters in commercial aircraft recorders where power interruption may occur during crash impact or system reset.

IC Role / Device Role / Timing Role: Crash-survivable memory buffer holding last 30 minutes of telemetry prior to event.

Use Value: Meets DO-160E Section 22 crash survivability requirements via autonomous V_CC monitoring and <3.0V battery switchover.

Use Scenario: Holding ladder logic state, I/O mapping, and configuration in factory-floor PLCs exposed to voltage sags and EMI.

IC Role / Device Role / Timing Role: Volatile SRAM replacement preserving runtime context during 200 ms brownouts typical in industrial power distribution.

Use Value: Prevents machine re-homing or sequence restart after brief outages, reducing downtime and scrap.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1250Y-100IND+	Wider V_CC range (4.5V–5.5V, ±10%), lower write-protection threshold (4.25–4.5V); identical pinout and timing	Better suited for unregulated 5V supplies with higher ripple; less margin before write lockout triggers	Select DS1250Y-100IND+ only if system V_CC variation exceeds ±5% and brownout response delay is acceptable
STK15C88-100I	Same 512k × 8 organization and 100ns speed, but uses external capacitor-based backup; no integrated lithium	Requires external supercapacitor and charge circuit; shorter retention (72 hours typical) unless actively maintained	Choose STK15C88-100I only when long-term retention is unnecessary and cost sensitivity outweighs reliability risk

Compared with DS1250Y-100IND+, the DS1250AB-100IND+ offers tighter V_CC regulation tolerance and earlier write protection - critical for precision brownout handling. Against STK15C88-100I, it delivers true 10-year retention without external components or maintenance, simplifying BOM and qualification.

Availability

DS1250AB-100IND+ is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory buffers, avionics black box recorders, and programmable logic controllers requiring stable component supply with guaranteed 10-year data retention.

Supply support for DS1250AB-100IND+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in high-reliability analog and mixed-signal ICs for industrial, automotive, and communications infrastructure.

The DS1250AB-100IND+ belongs to Maxim's nonvolatile SRAM product line, engineered specifically for applications demanding zero-software, zero-component data retention during unpredictable power loss events.

FAQ

What is the exact memory organization of the DS1250AB-100IND+?

The DS1250AB-100IND+ is organized as 524,288 words × 8 bits (4,194,304 total bits), matching the pinout and timing of standard 512k × 8 volatile SRAMs. This allows direct drop-in replacement without address decoding changes or PCB modification. Its 19 address lines (A0–A18) and 8 bidirectional data lines (DQ0–DQ7) maintain full compatibility with legacy microprocessor buses.

Does the DS1250AB-100IND+ require external circuitry for battery backup operation?

No, the DS1250AB-100IND+ contains a fully integrated lithium energy source and analog power-switching circuitry - no external capacitors, diodes, regulators, or charge controllers are needed. The internal freshness seal disconnects the battery until first power-up at V_CC > 4.25V, ensuring full 10-year retention capacity is preserved until deployment.

How does write protection activate on the DS1250AB-100IND+ during power loss?

DS1250AB-100IND+ continuously monitors V_CC. When voltage drops to the write-protection threshold (V_TP = 4.50–4.75V), it unconditionally disables write capability and places all inputs in "don't care" state and outputs in high-impedance. At ~3.0V, the internal switch connects the lithium source to retain data - all without host MCU involvement or external signaling.

Is the DS1250AB-100IND+ pin-compatible with the DS1250Y-100IND+?

Yes, DS1250AB-100IND+ and DS1250Y-100IND+ share identical 32-pin EDIP packaging, pin assignments, and AC/DC timing specifications. The only functional difference is V_CC tolerance (±5% vs. ±10%) and corresponding write-protection voltage thresholds - both parts can be interchanged at the board level if system rail stability meets the selected variant's specification.

What is the maximum operating current of the DS1250AB-100IND+ during active read/write cycles?

The DS1250AB-100IND+ draws up to 85 mA during active operation (I_CCO1), measured at V_CC = 5.0V with 200 ns cycle time. Standby current is 50–150 μA when CE is held high (V_CC–0.5V), making it suitable for low-power industrial systems where background memory retention must coexist with energy-constrained operation.

DS1250AB-100IND+ Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 32-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 4Mbit

Memory Organization:: 512K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 100ns

Access Time:: 100 ns

Voltage - Supply:: 4.75V ~ 5.25V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 32-EDIP

DS1250AB-100IND+ FAQ

1.How can I place an order for DS1250AB-100IND+ through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1250AB-100IND+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1250AB-100IND+ reliable?

The price and inventory of DS1250AB-100IND+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1250AB-100IND+ is usually 5 days.

3.What payment methods are accepted for DS1250AB-100IND+?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1250AB-100IND+ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1250AB-100IND+?

DS1250AB-100IND+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1250AB-100IND+ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1250AB-100IND+?

For technical support, including DS1250AB-100IND+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1250AB-100IND+ requirements.

6.How does Aetrix verify that DS1250AB-100IND+ is sourced from the original manufacturer or authorized distributors?

All DS1250AB-100IND+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1250AB-100IND+ meets industry standards.

7.What is the process for return or replacement of DS1250AB-100IND+?

All DS1250AB-100IND+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1250AB-100IND+, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1250AB-100IND+ part is unused and in its original packaging.

Return procedure for DS1250AB-100IND+:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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