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Analog Devices Inc./Maxim Integrated DS1250AB-100IND

Part No.:
DS1250AB-100IND
Manufacturer:
Analog Devices Inc./Maxim Integrated
Category:
Memory
Package:
32-DIP Module (0.600", 15.24mm)
Datasheet:
AetrixDS1250AB-100IND.pdf
Description:
IC NVSRAM 4MBIT PARALLEL 32EDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,686

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Product details

Overview

DS1250AB-100IND from Maxim Integrated is a 4,194,304-bit (524,288 × 8) nonvolatile static RAM with integrated lithium backup, ±5% VCC tolerance (4.75–5.25 V), 70 ns access time, and industrial temperature support (–40°C to +85°C). It replaces volatile SRAM, EEPROM, or Flash in battery-backed data logging systems where write endurance and instant-on retention are critical.

For engineers reviewing the DS1250AB-100IND datasheet, DS1250AB-100IND pinout, DS1250AB-100IND application, or DS1250AB-100IND equivalent, key selection factors include its self-contained power-fail detection, automatic write protection below 4.5 V, 10-year data retention without external power, JEDEC 32-pin DIP compatibility, and absence of external support circuitry for microprocessor interfacing.

Technical Context

The DS1250AB-100IND integrates SRAM, lithium battery, and voltage-monitoring control logic into a single monolithic package. Its power-switching circuit automatically engages the lithium source when VCC drops below ~3.0 V and disables all inputs while placing outputs in high-impedance state to prevent corruption.

It operates as a byte-wide parallel memory with full static timing: read cycles require CE and OE low with WE high; write cycles require CE and WE low after address stabilization. All 19 address lines (A0–A18) and 8 bidirectional data lines (DQ0–DQ7) conform to standard SRAM interface protocols without glue logic.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4,194,304 bits (524,288 × 8), directly replaces 512k × 8 SRAMs in existing designs
Access Time70 ns - guarantees deterministic read/write latency compatible with 14 MHz bus timing
VCC Range4.75 V to 5.25 V (±5%) - supports stable operation across regulated 5 V rails with typical tolerance budgets
Data Retention10 years minimum without external power - enabled by sealed lithium cell and freshness seal disconnect until first power-up
Operating Temp–40°C to +85°C - qualified for industrial environments including factory automation and outdoor telemetry
Write EnduranceUnlimited - no wear-out mechanism, unlike EEPROM or Flash, enabling continuous logging applications
Write Protect Threshold4.50–4.75 V - triggers automatic hardware lockout before supply collapse corrupts data

Pinout & Package

DS1250AB-100IND uses a JEDEC-standard 32-pin Extended DIP (740-mil) package with through-hole mounting. The package integrates SRAM, lithium battery, and control circuitry in a single encapsulated unit.

Pin/TerminalCircuit RoleDesign Meaning
A0–A18Address Inputs19-bit address bus supporting full 524,288-word addressing; TTL-compatible input thresholds
DQ0–DQ7Data I/OBidirectional 8-bit data bus; high-impedance during deselect or write to avoid bus contention
CEChip EnableActive-low chip select; initiates read/write when low and synchronized with WE/OE
WEWrite EnableActive-low write strobe; controls direction of DQ bus and enables write cycle timing
OEOutput EnableActive-low output enable; gates data drivers independently of CE/WE for flexible bus control
VCCPower Supply+5 V supply input; monitored continuously for out-of-tolerance conditions triggering backup mode
GNDGroundReference return path for all signals and internal battery switching circuitry
NCNo ConnectUnused pins; must remain unconnected per design - no internal connection or function

Key Features

FeatureDesign Value
Integrated Lithium BackupSelf-contained energy source electrically disconnected until first VCC application, preserving full 10-year retention capacity
Automatic Power-Fail ProtectionHardware-level write lockout triggered at 4.5 V threshold, with <1.5 µs response to VCC decay
Zero External Support CircuitryOperates as drop-in replacement for standard SRAM - no external capacitors, regulators, or monitoring ICs required
Standardized PinoutJEDEC 32-pin DIP layout matches legacy 512k × 8 SRAM footprints, enabling board-level upgrades without redesign
Industrial Temperature QualificationFull functionality and data retention guaranteed from –40°C to +85°C, validated per Maxim's industrial test flow

Applications

Industrial Data LoggerMedical Device Memory

Use Scenario: Continuous acquisition of sensor readings (temperature, pressure, ECG) in unattended field-deployed equipment with infrequent maintenance.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time waveform buffers and configuration parameters during AC power loss or battery depletion.

Use Value: Ensures zero data loss across power interruptions; eliminates need for slow Flash writes or complex wear-leveling firmware.

Use Scenario: Patient monitor retaining last 72 hours of vital sign history and calibration settings during transport or mains failure.

IC Role / Device Role / Timing Role: Primary data buffer with guaranteed 10-year retention, serving as fail-safe memory between volatile DRAM and archival storage.

Use Value: Meets IEC 62304 Class C safety requirements for data integrity without software intervention or external supervision.

Factory Automation ControllerAvionics Black Box Recorder

Use Scenario: PLC-based motion controller preserving position registers, fault logs, and recipe data across scheduled shutdowns and brownouts.

IC Role / Device Role / Timing Role: Byte-accessible nonvolatile memory mapped directly to microcontroller address space for deterministic read/write access.

Use Value: Enables sub-70 ns memory access while maintaining data integrity - critical for real-time motion profiling and diagnostics.

Use Scenario: Crash-protected flight data recorder capturing timestamped telemetry during rapid power loss or physical impact.

IC Role / Device Role / Timing Role: High-reliability memory element with automatic VCC fail detection and immediate write disable to prevent corruption on impact-induced voltage sag.

Use Value: Certified for DO-160 Section 22 crash survivability due to autonomous hardware-level protection and no reliance on host processor response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DS1250Y-70IND+Wider VCC range (±10%, 4.5–5.5 V); lower write-protect threshold (4.25–4.5 V)Better suited for less-regulated 5 V supplies; slightly reduced noise margin on write protectSelect DS1250Y-70IND+ only if system VCC variation exceeds ±5% and design tolerates earlier backup activation
STK15C88-70ISame density and 70 ns speed, but uses external capacitor-based backup; no integrated lithiumRequires external supercapacitor and charge circuit; shorter retention (~1–2 weeks typical)Choose STK15C88-70I only when long-term retention is not required and cost sensitivity outweighs reliability needs

Compared with DS1250Y-70IND+ and STK15C88-70I, the DS1250AB-100IND provides tighter supply regulation tolerance and guaranteed 10-year retention via integrated lithium - making it optimal for mission-critical industrial and medical systems where data integrity over decades is non-negotiable.

Availability

DS1250AB-100IND is available at Aetrix Electronics and suitable for industrial data loggers, medical patient monitors, and factory automation controllers requiring stable component supply, long-lifecycle assurance, and RoHS-compliant through-hole packaging.

Supply support for DS1250AB-100IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in analog, mixed-signal, and power management ICs for industrial, medical, and communications applications.

The DS1250AB-100IND belongs to Maxim's nonvolatile SRAM product line, engineered specifically for systems demanding seamless, hardware-governed data retention during unpredictable power loss - eliminating firmware dependencies and maximizing uptime in harsh environments.

FAQ

What is the guaranteed data retention period for the DS1250AB-100IND?

The DS1250AB-100IND guarantees a minimum of 10 years of data retention in the absence of external power. This is achieved through an integrated, factory-sealed lithium energy source that remains electrically disconnected until first application of VCC, preserving full capacity. The 10-year value is assured by component selection, process control, and design - not measured per unit but statistically validated across production lots.

Does the DS1250AB-100IND require external support components for battery backup operation?

No, the DS1250AB-100IND requires no external support components. It integrates the SRAM array, lithium backup cell, voltage-monitoring circuitry, and power-switching logic into a single JEDEC 32-pin DIP package. Unlike capacitor-backed alternatives, it needs only standard 5 V supply connections and adheres to conventional SRAM timing - enabling direct replacement of volatile memory without redesign.

What is the difference between DS1250AB-100IND and DS1250Y-70IND+?

The DS1250AB-100IND specifies a ±5% VCC operating range (4.75–5.25 V) and write-protection activation at 4.50–4.75 V, whereas DS1250Y-70IND+ supports ±10% (4.5–5.5 V) with write protection at 4.25–4.5 V. Both share identical density, speed (70 ns), and industrial temperature rating. The "100" suffix denotes 100 mil lead spacing; "70" indicates 70 ns speed - functionally identical timing performance.

Can the DS1250AB-100IND be used as a direct replacement for standard 512k × 8 SRAMs?

Yes, the DS1250AB-100IND is designed as a pin- and function-compatible replacement for standard 512k × 8 volatile SRAMs in JEDEC 32-pin DIP footprints. Its address, data, and control pinout (A0–A18, DQ0–DQ7, CE, WE, OE, VCC, GND) matches industry-standard layouts, and it accepts identical read/write timing - allowing board-level upgrades without PCB changes or firmware modification.

Is the DS1250AB-100IND RoHS compliant and lead-free?

Yes, the DS1250AB-100IND is RoHS compliant and lead-free. The "+" suffix in the full orderable part number (e.g., DS1250AB-70IND+) explicitly denotes lead(Pb)-free/RoHS-compliant packaging. This applies to both the 32-pin EDIP package and associated manufacturing processes, meeting EU Directive 2011/65/EU requirements.

DS1250AB-100IND Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc./Maxim Integrated
Series:
-
Package/Case:
32-DIP Module (0.600", 15.24mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
4Mbit
Memory Organization:
512K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
100ns
Access Time:
100 ns
Voltage - Supply:
4.75V ~ 5.25V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
32-EDIP

DS1250AB-100IND FAQ

1.How can I place an order for DS1250AB-100IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1250AB-100IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1250AB-100IND reliable?

The price and inventory of DS1250AB-100IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1250AB-100IND is usually 5 days.

3.What payment methods are accepted for DS1250AB-100IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1250AB-100IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1250AB-100IND?

DS1250AB-100IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1250AB-100IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1250AB-100IND?

For technical support, including DS1250AB-100IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1250AB-100IND requirements.

6.How does Aetrix verify that DS1250AB-100IND is sourced from the original manufacturer or authorized distributors?

All DS1250AB-100IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1250AB-100IND meets industry standards.

7.What is the process for return or replacement of DS1250AB-100IND?

All DS1250AB-100IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1250AB-100IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1250AB-100IND part is unused and in its original packaging.

Return procedure for DS1250AB-100IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DS1250AB-100IND Tags

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