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Analog Devices Inc./Maxim Integrated DS1250W-100+
- Part No.:
- DS1250W-100+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 32-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1250W-100+.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 32EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,002
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Product details
Overview
DS1250W-100+ from Maxim Integrated is a 4,194,304-bit (524,288 × 8) nonvolatile static RAM with integrated lithium backup, 3.3V supply, 100ns read/write access time, and JEDEC-standard 32-pin extended DIP package. It replaces volatile SRAM, EEPROM, or Flash in systems requiring automatic data retention during power loss-e.g., industrial PLCs preserving configuration registers.
For engineers reviewing the DS1250W-100+ datasheet, DS1250W-100+ pinout, DS1250W-100+ application, or DS1250W-100+ equivalent, key selection criteria include guaranteed 10-year data retention without external support, write-protection activation at 2.8V VCC, unlimited write cycles, and compatibility with standard 512k×8 byte-wide memory interfaces.
Technical Context
The DS1250W-100+ integrates SRAM, lithium battery, and voltage-monitoring control circuitry into a single monolithic module. Its power-fail detection triggers automatic switch to battery backup when VCC drops below ~2.5V, while write protection engages unconditionally at ≤2.8V to prevent corruption.
It operates in three distinct modes: normal read/write (VCC ≥ 3.0V), data retention (VCC < 2.5V, battery active), and transitional power-down/power-up (2.5V < VCC < 3.0V). The device uses asynchronous parallel interface with CE/OE/WE controls and requires no external support circuitry for microprocessor interfacing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (524,288 words × 8 bits) - supports full replacement of legacy 512k×8 SRAMs without address decoding changes. |
| Access Time | 100 ns - enables direct interface with 10 MHz bus systems without wait states. |
| Data Retention | 10 years minimum without external power - guaranteed from first VCC application, enabled by internal freshness seal disconnecting lithium until initial power-on. |
| Write Protection Threshold | 2.8V to 3.0V - ensures early, deterministic lockout before VCC decay causes logic-level uncertainty. |
| Supply Voltage Range | 3.0V to 3.6V - compatible with standard 3.3V LVTTL and LVCMOS I/O domains. |
| Operating Temperature | 0°C to +70°C - commercial-grade thermal performance validated across full range per AC/DC specs. |
| Standby Current | 30 µA to 250 µA - ultra-low ICCS2 enables long-term battery-backed retention with minimal self-discharge impact. |
Pinout & Package
DS1250W-100+ uses a JEDEC-standard 32-pin Extended Dual In-line Package (740-mil width), fully compatible with socketed 512k×8 SRAM footprints. Pinout supports standard parallel memory interface with dedicated address, data, and control lines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 524,288-word addressing; TTL-compatible inputs with VIH ≥ 2.2V. |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; outputs enter high-Z on CE/OE deactivation or WE assertion during writes. |
| CE | Chip Enable | Active-low chip select; initiates read/write when low; drives internal state machine for power-fail response. |
| WE | Write Enable | Active-low write strobe; combined with CE to define write cycle timing; disables outputs during write if OE is active. |
| OE | Output Enable | Active-low output enable; controls data bus drivers independently of CE/WE for multiplexed bus sharing. |
| VCC | Power Supply | +3.3V ±0.3V main supply; powers SRAM core and control logic; monitored continuously for fail detection. |
| GND | Ground | Reference return for all signals and power; decoupling required per high-speed SRAM layout guidelines. |
| NC | No Connect | Unbonded pins (pins 13, 31); must remain unconnected to avoid unintended coupling or ESD paths. |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Response | Switches to lithium backup within 1.5 µs of VCC falling below threshold, eliminating need for external supervisor ICs or firmware intervention. |
| Freshness Seal | Lithium source remains electrically disconnected until first VCC application >3.0V, preserving full 10-year retention capacity from shipment. |
| Unlimited Write Cycles | No endurance wear-out mechanism - unlike Flash or EEPROM, supports continuous logging or real-time parameter updates without degradation. |
| Standardized Pinout | JEDEC 32-pin DIP footprint matches legacy 512k×8 SRAMs, enabling drop-in replacement without PCB redesign. |
| Zero External Support Circuitry | Integrates voltage monitoring, battery switching, and write protection - no external capacitors, resistors, or supervisors required. |
Applications
| Industrial Data Loggers | Medical Device Configuration Storage |
|---|---|
Use Scenario: Battery-powered field loggers recording sensor readings over weeks without mains power. IC Role / Device Role / Timing Role: Nonvolatile SRAM holding timestamped measurement buffers and calibration tables during intermittent power loss. Use Value: Guarantees 10-year data integrity without periodic refresh or complex file-system overhead - critical for regulatory audit trails. | Use Scenario: Portable diagnostic equipment storing user preferences, calibration offsets, and last-used settings. IC Role / Device Role / Timing Role: Immediate-access configuration memory that survives cold starts and accidental battery removal. Use Value: Eliminates boot-time EEPROM reads and write delays, enabling sub-second power-on readiness per IEC 62304 requirements. |
| Telecom Line Card Status Memory | Automotive Body Control Module (BCM) NVRAM |
Use Scenario: Carrier-grade line cards maintaining port state, alarm history, and provisioning data across AC power interruptions. IC Role / Device Role / Timing Role: High-reliability shadow RAM mirroring volatile control registers during brownouts. Use Value: Prevents service disruption by retaining operational state through multi-second grid dips - meets Telcordia GR-63-CORE fault tolerance. | Use Scenario: BCMs storing seat/mirror position memories, door lock configurations, and lighting profiles across ignition cycles. IC Role / Device Role / Timing Role: Automotive-grade nonvolatile storage interfacing directly with 8-bit microcontroller buses. Use Value: Supports AEC-Q100 Class 2 temperature operation (via IND variant) and eliminates EEPROM write latency during vehicle startup sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1249Y-100+ | 512k×8 (4,194,304-bit) NV SRAM, same 100ns speed, but uses older 28-pin DIP package and lacks freshness seal - lithium connected at manufacture. | Requires board-level battery isolation design; not suitable where shelf-life retention is critical pre-deployment. | Select DS1249Y-100+ only for legacy 28-pin sockets or cost-sensitive designs accepting reduced shelf-life margin. |
| STK14C88-3A50I | 4-Mbit NV SRAM with 55ns access, 3.3V supply, and industrial temp rating, but uses 32-pin SOJ package - different pinout and layout. | Not pin-compatible; requires PCB redesign and signal routing changes due to SOJ footprint and address/data interleaving. | Choose STK14C88-3A50I only when faster access time justifies layout revision and higher component cost. |
Compared with DS1249Y-100+ and STK14C88-3A50I, DS1250W-100+ uniquely combines JEDEC 32-pin DIP compatibility, factory-fresh lithium sealing, and guaranteed 10-year retention - making it optimal for field-deployed equipment where long-term reliability and zero-layout-change upgrades are mandatory.
Availability
DS1250W-100+ is available at Aetrix Electronics and suitable for industrial data loggers, medical device configuration storage, and telecom line card status memory requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for DS1250W-100+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in analog, mixed-signal, and power-management ICs for industrial, communications, and computing applications.
The DS1250W-100+ belongs to Maxim's nonvolatile SRAM product line, engineered to eliminate external battery management and firmware-based data protection in mission-critical memory applications.
FAQ
What is the guaranteed data retention period for DS1250W-100+ under battery backup?
The DS1250W-100+ guarantees a minimum 10-year data retention period in the absence of external power, measured from the time VCC is first applied - enabled by its internal freshness seal that preserves full lithium capacity until initial power-on. This specification is validated across the commercial temperature range (0°C to +70°C) and applies to the DS1250W-100+ device specifically, not extrapolated from family data.
Does DS1250W-100+ require external circuitry for write protection during power failure?
No, DS1250W-100+ does not require external circuitry for write protection. Its integrated voltage monitor detects VCC decay and automatically enables write protection when supply falls to 2.8V–3.0V, then switches to lithium backup below ~2.5V. All control logic, battery switching, and retention management are self-contained within the DS1250W-100+ package.
Is DS1250W-100+ pin-compatible with standard 512k×8 SRAMs?
Yes, DS1250W-100+ uses a JEDEC-standard 32-pin extended DIP package with identical pinout to conventional 512k×8 byte-wide SRAMs. Address (A0–A18), data (DQ0–DQ7), and control (CE/OE/WE/VCC/GND) signals map directly - enabling true drop-in replacement without PCB modification or signal re-routing.
What is the maximum operating current of DS1250W-100+ during active read/write cycles?
The DS1250W-100+ has a maximum operating current (ICCO1) of 50 mA under typical conditions (VCC = 3.3V ±0.3V, TA = +25°C). This value is specified in the DC Electrical Characteristics table and represents peak current draw during sustained read or write operations - sufficient for integration with standard 3.3V microcontroller buses without additional regulation.
Can DS1250W-100+ be used in industrial temperature environments?
The DS1250W-100+ is rated for commercial temperature range (0°C to +70°C). For industrial environments (-40°C to +85°C), the DS1250W-100IND+ variant must be selected - it shares identical functionality and pinout but is qualified across the extended range. Using DS1250W-100+ outside its specified 0°C to +70°C range may compromise data retention and timing compliance.
DS1250W-100+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 32-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-EDIP
DS1250W-100+ FAQ
1.How can I place an order for DS1250W-100+ through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1250W-100+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1250W-100+ reliable?
The price and inventory of DS1250W-100+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1250W-100+ is usually 5 days.
3.What payment methods are accepted for DS1250W-100+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1250W-100+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1250W-100+?
DS1250W-100+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1250W-100+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1250W-100+?
For technical support, including DS1250W-100+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1250W-100+ requirements.
6.How does Aetrix verify that DS1250W-100+ is sourced from the original manufacturer or authorized distributors?
All DS1250W-100+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1250W-100+ meets industry standards.
7.What is the process for return or replacement of DS1250W-100+?
All DS1250W-100+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1250W-100+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1250W-100+ part is unused and in its original packaging.
Return procedure for DS1250W-100+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1250W-100+ Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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