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Analog Devices Inc./Maxim Integrated DS1250W-100IND
- Part No.:
- DS1250W-100IND
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 32-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1250W-100IND.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 32EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,257
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Product details
Overview
DS1250W-100IND from Maxim Integrated is a 4,194,304-bit (524,288 × 8) nonvolatile SRAM with integrated lithium backup, 100ns read/write access time, 3.3V ±0.3V supply, industrial temperature range (–40°C to +85°C), and JEDEC-standard 32-pin extended DIP package. It replaces volatile 512k×8 SRAMs in battery-backed memory applications requiring data retention during power loss.
For engineers reviewing the DS1250W-100IND datasheet, DS1250W-100IND pinout, DS1250W-100IND application, or DS1250W-100IND equivalent, key selection criteria include guaranteed 10-year data retention without external power, automatic write protection at VCC < 2.8V, unlimited write cycles, low-power CMOS operation, and compatibility with standard bytewide microprocessor buses.
Technical Context
The DS1250W-100IND integrates static RAM, lithium energy source, and voltage-monitoring control circuitry in a monolithic 32-pin EDIP package. Its power-fail detection triggers automatic switch to battery backup when VCC drops below ~2.5V, enabling seamless data retention without host intervention.
It operates as a drop-in replacement for 512k×8 SRAMs using standard CE/OE/WE control logic and 19-bit address bus (A0–A18). The device enforces unconditional write protection during power-down and maintains high-impedance outputs while in data retention mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (524,288 words × 8 bits) - supports full byte-wide addressing for legacy 8-bit microcontrollers and embedded controllers. |
| Access Time | 100 ns - enables direct interface with 10 MHz bus systems without wait states. |
| Supply Voltage | 3.3 V ±0.3 V - compatible with modern low-voltage logic families and avoids level-shifting requirements. |
| Data Retention | 10 years minimum without external power - achieved via internal lithium cell and freshness seal activated on first power-up. |
| Operating Temp | –40°C to +85°C - qualified for industrial automation, transportation, and outdoor infrastructure applications. |
| Write Cycles | Unlimited - eliminates wear-out concerns in frequently updated configuration or logging memory. |
| Write Protect Threshold | 2.8 V to 3.0 V - ensures early, deterministic lockout before VCC decay causes metastability or corruption. |
Pinout & Package
DS1250W-100IND uses a JEDEC-standard 32-pin Extended DIP (740-mil) package with integrated lithium battery and control circuitry. Pinout conforms to industry-standard bytewide SRAM layout for plug-compatible replacement of legacy 512k×8 devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 524,288-word decoding; compatible with standard microprocessor address lines. |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus with TTL-compatible levels; supports concurrent read/write without external transceivers. |
| CE | Chip Enable | Active-low chip select; initiates access when low and coordinates with OE/WE to define cycle type. |
| OE | Output Enable | Active-low output control; enables data drivers only during read cycles when CE and WE are properly asserted. |
| WE | Write Enable | Active-low write strobe; determines write start/stop timing relative to CE; disables outputs during writes if OE is active. |
| VCC | Power Supply | +3.3 V main supply; powers SRAM core and control logic; triggers lithium activation on first application >3.0 V. |
| GND | Ground | Reference return path for all signals and power; requires low-impedance connection to minimize noise-induced errors. |
| NC | No Connect | Unbonded pin; must remain unconnected to avoid unintended coupling or leakage paths. |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Switching | Switches to lithium backup within 1.5 µs of VCC falling below 2.8 V, preventing data corruption during brownouts. |
| Freshness Seal Activation | Lithium cell remains electrically disconnected until first VCC application >3.0 V, preserving full 10-year capacity. |
| Standardized Pinout | 32-pin JEDEC DIP layout matches legacy 512k×8 SRAMs, enabling PCB reuse without redesign. |
| Unconditional Write Protection | Entire memory array locked automatically during power loss - no software or external hardware required. |
| Low Standby Current | Max 250 µA at VCC = 3.3 V and CE = VIH - reduces system-level quiescent power in always-on industrial nodes. |
Applications
| Industrial PLC Data Logging | Metering Firmware Storage |
|---|---|
|
Use Scenario: Storing real-time energy consumption logs and calibration constants in smart electricity meters deployed outdoors. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing instant-access, write-enduring memory for firmware variables and metering registers. Use Value: Guarantees 10-year data integrity without supercapacitors or external battery management, meeting ANSI C12.20 and IEC 62056 standards. |
Use Scenario: Holding configuration parameters and tamper-event timestamps in utility-grade gas/water meters operating across wide temperature swings. IC Role / Device Role / Timing Role: Battery-backed memory serving as secure, fast-access storage for critical operational state. Use Value: Eliminates EEPROM wear-out risk and flash write latency, enabling sub-millisecond updates during meter wake-up events. |
| Railway Signaling Control | Medical Diagnostic Equipment |
|
Use Scenario: Preserving safety-critical interlocking logic states and fault history in trackside signaling units exposed to –40°C cold starts and EMI-rich environments. IC Role / Device Role / Timing Role: Fail-safe memory holding validated control tables and last-known safe position data. Use Value: Meets EN 50126/128/129 SIL-2 requirements via deterministic write protection and zero-latency retention on power interruption. |
Use Scenario: Storing calibration coefficients and patient session metadata in portable ultrasound and ECG devices requiring regulatory-compliant data persistence. IC Role / Device Role / Timing Role: High-reliability memory backing up diagnostic settings and audit trails between power cycles. Use Value: Provides FDA 21 CFR Part 11-aligned data integrity with no write-cycle limits, avoiding recalibration after frequent power cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK14C88-100I | 512k×8 NV SRAM, 3.3V, 100ns, industrial temp; uses external capacitor-based backup instead of integrated lithium. | Limited to ~1 week data retention without external power; requires external capacitor charging circuitry and voltage monitoring. | Select when cost sensitivity outweighs long-term retention needs and board space allows discrete backup components. |
| AS6C4008-100TIN | Volatile 512k×8 SRAM, 3.3V, 100ns, industrial temp; no built-in nonvolatility - requires external battery + controller. | No autonomous power-fail response; relies on host MCU to detect brownout and initiate save-to-flash - introduces data loss risk. | Choose only if existing design already implements external backup control and firmware handles graceful shutdown. |
Compared with STK14C88-100I and AS6C4008-100TIN, DS1250W-100IND delivers true autonomous 10-year retention without external components or host intervention - reducing BOM count, qualification effort, and field failure modes in safety-critical industrial deployments.
Availability
DS1250W-100IND is available at Aetrix Electronics and suitable for industrial PLC data logging, utility metering firmware storage, and railway signaling control requiring stable component supply, long-lifecycle support, and guaranteed data integrity under intermittent power conditions.
Supply support for DS1250W-100IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for demanding industrial, medical, and communications applications.
The DS1250W-100IND belongs to Maxim's nonvolatile SRAM product line, engineered specifically to eliminate external backup circuitry while delivering deterministic, maintenance-free data retention in harsh, mission-critical environments.
FAQ
What is the guaranteed data retention period for DS1250W-100IND without external power?
The DS1250W-100IND guarantees a minimum of 10 years of data retention in the absence of external power, measured from the time VCC is first applied and the internal lithium energy source is activated. This specification assumes proper handling per the freshness seal protocol and operation within the rated industrial temperature range (–40°C to +85°C).
Does DS1250W-100IND require external circuitry to enable nonvolatile operation?
No, DS1250W-100IND requires no external circuitry for nonvolatile operation. Its integrated lithium cell, voltage monitor, and power-switching logic operate autonomously. The device activates its backup function within 1.5 µs of detecting VCC decay below 2.8 V, and write protection engages unconditionally - no host MCU intervention or external components are needed.
Can DS1250W-100IND be used as a direct replacement for standard 512k×8 SRAMs?
Yes, DS1250W-100IND uses a JEDEC-standard 32-pin extended DIP footprint and identical pinout (A0–A18, DQ0–DQ7, CE, OE, WE, VCC, GND) as legacy 512k×8 SRAMs. It supports the same read/write timing and control protocols, enabling drop-in replacement on existing PCBs without layout changes or firmware modifications.
What happens to DS1250W-100IND outputs during power loss?
During power loss, DS1250W-100IND transitions to data retention mode: all inputs become "don't care," outputs go high-impedance within 35 ns of CE/WE deactivation, and the lithium source connects to the SRAM core. This prevents bus contention and ensures memory contents remain intact without drawing current from failing rails.
Is DS1250W-100IND RoHS-compliant and lead-free?
Yes, DS1250W-100IND+ (as indicated by the "+" suffix) is RoHS-compliant and lead-free. The device meets EU Directive 2011/65/EU and is manufactured with Pb-free terminations and halogen-free molding compounds, verified through certified material declarations and testing per J-STD-020 and IPC/JEDEC J-STD-033.
DS1250W-100IND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 32-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-EDIP
DS1250W-100IND FAQ
1.How can I place an order for DS1250W-100IND through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1250W-100IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1250W-100IND reliable?
The price and inventory of DS1250W-100IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1250W-100IND is usually 5 days.
3.What payment methods are accepted for DS1250W-100IND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1250W-100IND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1250W-100IND?
DS1250W-100IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1250W-100IND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1250W-100IND?
For technical support, including DS1250W-100IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1250W-100IND requirements.
6.How does Aetrix verify that DS1250W-100IND is sourced from the original manufacturer or authorized distributors?
All DS1250W-100IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1250W-100IND meets industry standards.
7.What is the process for return or replacement of DS1250W-100IND?
All DS1250W-100IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1250W-100IND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1250W-100IND part is unused and in its original packaging.
Return procedure for DS1250W-100IND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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