Analog Devices Inc./Maxim Integrated DS1250Y-100
- Part No.:
- DS1250Y-100
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 32-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1250Y-100.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 32EDIP
- Quantity:
- Payment:

- Shipping:

Inventory:4,189
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Product details
Overview
DS1250Y-100 from Maxim Integrated is a 4,194,304-bit (524,288 × 8) nonvolatile static RAM with integrated lithium backup, JEDEC-standard 32-pin DIP package, ±10% VCC operating range (4.5V–5.5V), and 70ns read/write access time. It replaces volatile SRAM, EEPROM, or Flash in battery-critical industrial data loggers requiring automatic power-loss write protection and 10-year data retention.
For engineers reviewing the DS1250Y-100 datasheet, DS1250Y-100 pinout, DS1250Y-100 application, or DS1250Y-100 equivalent, key selection criteria include its self-contained lithium energy source, VTP = 4.25V write-protection threshold, 32-pin EDIP mechanical compatibility, and absence of external support circuitry for microprocessor interfacing.
Technical Context
The DS1250Y-100 implements autonomous power-fail detection using internal voltage monitoring that triggers unconditional write protection when VCC drops below 4.25V and switches to lithium backup at ~3.0V. Its control logic enforces high-impedance outputs and "don't care" inputs during data retention mode.
It supports standard asynchronous SRAM timing: tACC = 70ns, tRC = 70ns, tWP = 55ns, with CE/WE/OE dual-edge-controlled read and write cycles. The device requires no external capacitors, regulators, or reset generators - all nonvolatile management is fully integrated.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4,194,304 bits (524,288 × 8) - byte-wide interface compatible with legacy 512k×8 SRAM sockets |
| Access Time | 70 ns - enables direct replacement of 70ns static RAMs without timing redesign |
| VCC Range | 4.5V to 5.5V (±10%) - supports wide-input industrial power rails without regulation |
| Write Protection Threshold | VTP = 4.25V (min) - initiates automatic data safeguarding before brownout corruption occurs |
| Data Retention | 10 years minimum without external power - guaranteed by sealed lithium cell and low-ICCS2 (50–150 µA) |
| Operating Temperature | 0°C to +70°C (Commercial) - validated across full range with no derating required |
| Package | 32-pin 740-mil Extended DIP (EDIP) - JEDEC-standard footprint, wave-solderable, no reflow exposure |
Pinout & Package
DS1250Y-100 uses a JEDEC-standard 32-pin 740-mil Extended DIP (EDIP) package. The lithium energy source is internally sealed and electrically disconnected until first VCC application ≥4.25V, preserving full battery capacity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 524,288-word decoding; no address latching required |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus with TTL-compatible levels and 2mA drive capability |
| CE | Chip Enable | Active-low chip select; controls device enable and write-cycle initiation timing (tCO, tWC) |
| WE | Write Enable | Active-low write strobe; determines write start/stop edges with CE (tWP, tWR) |
| OE | Output Enable | Active-low output control; enables data drivers only during reads (tOE, tOD) |
| VCC | Power Supply | +5V supply input; powers SRAM core and control logic; monitored for VTP detection |
| GND | Ground | Reference return path for all signals and internal switching circuits |
| NC | No Connect | Pins 1 and 32 are unconnected; no internal bonding or routing |
Key Features
| Feature | Design Value |
|---|---|
| Self-contained lithium backup | Integrated battery and power-switching circuit eliminate external backup components and PCB space |
| Automatic write protection | Hardware-enforced disable of writes at VCC ≤ 4.25V prevents partial writes and data corruption |
| Unlimited write cycles | No endurance limit on SRAM core - supports continuous logging or frequent configuration updates |
| Freshness seal | Lithium source remains electrically isolated until first power-up, ensuring full 10-year retention budget |
| Standard DIP compatibility | Pin-for-pin match with 32-pin 512k×8 SRAMs enables drop-in upgrade without layout change |
Applications
| Industrial Data Logger | Medical Device Memory |
|---|---|
Use Scenario: Continuous acquisition of sensor readings in remote environmental monitors with infrequent maintenance. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing timestamped measurements during mains failure or battery depletion. Use Value: Guarantees 10-year data integrity without periodic refresh or external EEPROM wear leveling. |
Use Scenario: Storing calibration coefficients and patient session history in portable diagnostic equipment. IC Role / Device Role / Timing Role: Fail-safe memory holding critical settings across unexpected shutdowns during clinical use. Use Value: Eliminates risk of corrupted calibration due to sub-4.25V brownouts during battery swaps. |
| Telecom Base Station Controller | Avionics Black Box Recorder |
Use Scenario: Caching configuration tables and fault logs in carrier-grade network edge devices. IC Role / Device Role / Timing Role: High-speed, byte-accessible storage retaining operational state during AC loss or hot-swap events. Use Value: Enables sub-70ns read/write performance while maintaining data through multi-second power gaps. |
Use Scenario: Recording flight parameters in commercial aircraft where EMI and thermal cycling demand robust retention. IC Role / Device Role / Timing Role: Mission-critical memory preserving last 25 hours of telemetry even after crash-induced power loss. Use Value: Meets DO-160 Section 22 lightning-induced transient immunity via hardware-level write lockout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1250AB-70+ | Narrower VCC tolerance (±5%, 4.75–5.25V); higher VTP = 4.50V; identical pinout and timing | Better suited for regulated 5V systems where tighter supply stability is guaranteed | Select DS1250AB-70+ when system VCC variation is controlled within ±5% and higher write-protection margin is preferred |
| STK14CA8-70I | Same density and 70ns speed but uses external capacitor-based backup; no integrated lithium; 32-pin SOJ package | Requires external 0.47F capacitor and charge circuit; not suitable for space-constrained DIP footprints | Choose STK14CA8-70I only if lithium-free design is mandated and board area allows capacitor placement |
Compared with DS1250AB-70+, the DS1250Y-100 offers wider supply tolerance for unregulated environments, while STK14CA8-70I trades integrated reliability for regulatory flexibility - making DS1250Y-100 optimal for field-deployed equipment needing zero-support-component fail-safe memory.
Availability
DS1250Y-100 is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic instruments, and telecom base station controllers requiring stable component supply, long-lifecycle assurance, and RoHS-compliant packaging.
Supply support for DS1250Y-100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for demanding industrial, medical, and communications applications.
The DS1250Y-100 belongs to Maxim's nonvolatile SRAM product line, engineered specifically to replace battery-backed volatile memory in systems where data integrity during unpredictable power loss is mission-critical.
FAQ
What is the guaranteed data retention period for the DS1250Y-100?
The DS1250Y-100 guarantees a minimum 10-year data retention period in the absence of external power, measured from the time VCC is first applied ≥4.25V. This specification is assured by component selection, process control, and internal lithium cell design - not extrapolated or estimated. The DS1250Y-100 achieves this without external capacitors or refresh circuitry.
Does the DS1250Y-100 require external support components for nonvolatile operation?
No, the DS1250Y-100 requires no external support components. Its integrated lithium energy source, voltage-monitoring circuitry, and automatic power-switching logic are fully contained within the 32-pin EDIP package. The DS1250Y-100 operates as a drop-in replacement for standard 512k×8 SRAMs with no additional regulators, capacitors, or control ICs needed.
What is the write-protection trigger voltage for the DS1250Y-100?
The DS1250Y-100 initiates unconditional write protection when VCC falls to 4.25V (minimum), per its specified VTP parameter. At this threshold, all inputs become "don't care," outputs go high-impedance, and the lithium source engages at ~3.0V. This behavior is hardwired and does not rely on firmware or external supervision - a core feature of the DS1250Y-100.
Is the DS1250Y-100 compatible with standard 32-pin DIP sockets designed for 512k×8 SRAMs?
Yes, the DS1250Y-100 uses a JEDEC-standard 32-pin 740-mil Extended DIP (EDIP) package with identical pinout and mechanical dimensions to legacy 512k×8 SRAMs. Its A0–A18, DQ0–DQ7, CE, WE, OE, VCC, and GND assignments match industry-standard byte-wide SRAM interfaces - enabling true socket-level replacement without PCB modification.
How does the DS1250Y-100 handle power-up sequencing and stabilization?
During power-up, the DS1250Y-100 waits until VCC exceeds ~3.0V to reconnect external supply and disconnect lithium backup; full functional operation resumes only after VCC exceeds 4.5V. The DS1250Y-100 includes tPU = 2ms delay from VCC validity to CE/WE deactivation, ensuring stable initialization before accepting commands.
DS1250Y-100 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 32-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-EDIP
DS1250Y-100 FAQ
1.How can I place an order for DS1250Y-100 through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1250Y-100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1250Y-100 reliable?
The price and inventory of DS1250Y-100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1250Y-100 is usually 5 days.
3.What payment methods are accepted for DS1250Y-100?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1250Y-100 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1250Y-100?
DS1250Y-100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1250Y-100 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1250Y-100?
For technical support, including DS1250Y-100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1250Y-100 requirements.
6.How does Aetrix verify that DS1250Y-100 is sourced from the original manufacturer or authorized distributors?
All DS1250Y-100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1250Y-100 meets industry standards.
7.What is the process for return or replacement of DS1250Y-100?
All DS1250Y-100 units undergo pre-shipment inspection (PSI). If there is an issue with DS1250Y-100, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1250Y-100 part is unused and in its original packaging.
Return procedure for DS1250Y-100:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1250Y-100 Tags

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AT24C02C-XHM-T
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