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Analog Devices Inc./Maxim Integrated DS1250Y-100

Part No.:
DS1250Y-100
Manufacturer:
Analog Devices Inc./Maxim Integrated
Category:
Memory
Package:
32-DIP Module (0.600", 15.24mm)
Datasheet:
AetrixDS1250Y-100.pdf
Description:
IC NVSRAM 4MBIT PARALLEL 32EDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,189

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Product details

Overview

DS1250Y-100 from Maxim Integrated is a 4,194,304-bit (524,288 × 8) nonvolatile static RAM with integrated lithium backup, JEDEC-standard 32-pin DIP package, ±10% VCC operating range (4.5V–5.5V), and 70ns read/write access time. It replaces volatile SRAM, EEPROM, or Flash in battery-critical industrial data loggers requiring automatic power-loss write protection and 10-year data retention.

For engineers reviewing the DS1250Y-100 datasheet, DS1250Y-100 pinout, DS1250Y-100 application, or DS1250Y-100 equivalent, key selection criteria include its self-contained lithium energy source, VTP = 4.25V write-protection threshold, 32-pin EDIP mechanical compatibility, and absence of external support circuitry for microprocessor interfacing.

Technical Context

The DS1250Y-100 implements autonomous power-fail detection using internal voltage monitoring that triggers unconditional write protection when VCC drops below 4.25V and switches to lithium backup at ~3.0V. Its control logic enforces high-impedance outputs and "don't care" inputs during data retention mode.

It supports standard asynchronous SRAM timing: tACC = 70ns, tRC = 70ns, tWP = 55ns, with CE/WE/OE dual-edge-controlled read and write cycles. The device requires no external capacitors, regulators, or reset generators - all nonvolatile management is fully integrated.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size 4,194,304 bits (524,288 × 8) - byte-wide interface compatible with legacy 512k×8 SRAM sockets
Access Time 70 ns - enables direct replacement of 70ns static RAMs without timing redesign
VCC Range 4.5V to 5.5V (±10%) - supports wide-input industrial power rails without regulation
Write Protection Threshold VTP = 4.25V (min) - initiates automatic data safeguarding before brownout corruption occurs
Data Retention 10 years minimum without external power - guaranteed by sealed lithium cell and low-ICCS2 (50–150 µA)
Operating Temperature 0°C to +70°C (Commercial) - validated across full range with no derating required
Package 32-pin 740-mil Extended DIP (EDIP) - JEDEC-standard footprint, wave-solderable, no reflow exposure

Pinout & Package

DS1250Y-100 uses a JEDEC-standard 32-pin 740-mil Extended DIP (EDIP) package. The lithium energy source is internally sealed and electrically disconnected until first VCC application ≥4.25V, preserving full battery capacity.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address Inputs 19-bit address bus supporting full 524,288-word decoding; no address latching required
DQ0–DQ7 Data I/O Bidirectional 8-bit data bus with TTL-compatible levels and 2mA drive capability
CE Chip Enable Active-low chip select; controls device enable and write-cycle initiation timing (tCO, tWC)
WE Write Enable Active-low write strobe; determines write start/stop edges with CE (tWP, tWR)
OE Output Enable Active-low output control; enables data drivers only during reads (tOE, tOD)
VCC Power Supply +5V supply input; powers SRAM core and control logic; monitored for VTP detection
GND Ground Reference return path for all signals and internal switching circuits
NC No Connect Pins 1 and 32 are unconnected; no internal bonding or routing

Key Features

Feature Design Value
Self-contained lithium backup Integrated battery and power-switching circuit eliminate external backup components and PCB space
Automatic write protection Hardware-enforced disable of writes at VCC ≤ 4.25V prevents partial writes and data corruption
Unlimited write cycles No endurance limit on SRAM core - supports continuous logging or frequent configuration updates
Freshness seal Lithium source remains electrically isolated until first power-up, ensuring full 10-year retention budget
Standard DIP compatibility Pin-for-pin match with 32-pin 512k×8 SRAMs enables drop-in upgrade without layout change

Applications

Industrial Data Logger Medical Device Memory

Use Scenario: Continuous acquisition of sensor readings in remote environmental monitors with infrequent maintenance.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing timestamped measurements during mains failure or battery depletion.

Use Value: Guarantees 10-year data integrity without periodic refresh or external EEPROM wear leveling.

Use Scenario: Storing calibration coefficients and patient session history in portable diagnostic equipment.

IC Role / Device Role / Timing Role: Fail-safe memory holding critical settings across unexpected shutdowns during clinical use.

Use Value: Eliminates risk of corrupted calibration due to sub-4.25V brownouts during battery swaps.

Telecom Base Station Controller Avionics Black Box Recorder

Use Scenario: Caching configuration tables and fault logs in carrier-grade network edge devices.

IC Role / Device Role / Timing Role: High-speed, byte-accessible storage retaining operational state during AC loss or hot-swap events.

Use Value: Enables sub-70ns read/write performance while maintaining data through multi-second power gaps.

Use Scenario: Recording flight parameters in commercial aircraft where EMI and thermal cycling demand robust retention.

IC Role / Device Role / Timing Role: Mission-critical memory preserving last 25 hours of telemetry even after crash-induced power loss.

Use Value: Meets DO-160 Section 22 lightning-induced transient immunity via hardware-level write lockout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
DS1250AB-70+ Narrower VCC tolerance (±5%, 4.75–5.25V); higher VTP = 4.50V; identical pinout and timing Better suited for regulated 5V systems where tighter supply stability is guaranteed Select DS1250AB-70+ when system VCC variation is controlled within ±5% and higher write-protection margin is preferred
STK14CA8-70I Same density and 70ns speed but uses external capacitor-based backup; no integrated lithium; 32-pin SOJ package Requires external 0.47F capacitor and charge circuit; not suitable for space-constrained DIP footprints Choose STK14CA8-70I only if lithium-free design is mandated and board area allows capacitor placement

Compared with DS1250AB-70+, the DS1250Y-100 offers wider supply tolerance for unregulated environments, while STK14CA8-70I trades integrated reliability for regulatory flexibility - making DS1250Y-100 optimal for field-deployed equipment needing zero-support-component fail-safe memory.

Availability

DS1250Y-100 is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic instruments, and telecom base station controllers requiring stable component supply, long-lifecycle assurance, and RoHS-compliant packaging.

Supply support for DS1250Y-100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for demanding industrial, medical, and communications applications.

The DS1250Y-100 belongs to Maxim's nonvolatile SRAM product line, engineered specifically to replace battery-backed volatile memory in systems where data integrity during unpredictable power loss is mission-critical.

FAQ

What is the guaranteed data retention period for the DS1250Y-100?

The DS1250Y-100 guarantees a minimum 10-year data retention period in the absence of external power, measured from the time VCC is first applied ≥4.25V. This specification is assured by component selection, process control, and internal lithium cell design - not extrapolated or estimated. The DS1250Y-100 achieves this without external capacitors or refresh circuitry.

Does the DS1250Y-100 require external support components for nonvolatile operation?

No, the DS1250Y-100 requires no external support components. Its integrated lithium energy source, voltage-monitoring circuitry, and automatic power-switching logic are fully contained within the 32-pin EDIP package. The DS1250Y-100 operates as a drop-in replacement for standard 512k×8 SRAMs with no additional regulators, capacitors, or control ICs needed.

What is the write-protection trigger voltage for the DS1250Y-100?

The DS1250Y-100 initiates unconditional write protection when VCC falls to 4.25V (minimum), per its specified VTP parameter. At this threshold, all inputs become "don't care," outputs go high-impedance, and the lithium source engages at ~3.0V. This behavior is hardwired and does not rely on firmware or external supervision - a core feature of the DS1250Y-100.

Is the DS1250Y-100 compatible with standard 32-pin DIP sockets designed for 512k×8 SRAMs?

Yes, the DS1250Y-100 uses a JEDEC-standard 32-pin 740-mil Extended DIP (EDIP) package with identical pinout and mechanical dimensions to legacy 512k×8 SRAMs. Its A0–A18, DQ0–DQ7, CE, WE, OE, VCC, and GND assignments match industry-standard byte-wide SRAM interfaces - enabling true socket-level replacement without PCB modification.

How does the DS1250Y-100 handle power-up sequencing and stabilization?

During power-up, the DS1250Y-100 waits until VCC exceeds ~3.0V to reconnect external supply and disconnect lithium backup; full functional operation resumes only after VCC exceeds 4.5V. The DS1250Y-100 includes tPU = 2ms delay from VCC validity to CE/WE deactivation, ensuring stable initialization before accepting commands.

DS1250Y-100 Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc./Maxim Integrated
Series:
-
Package/Case:
32-DIP Module (0.600", 15.24mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
4Mbit
Memory Organization:
512K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
100ns
Access Time:
100 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
32-EDIP

DS1250Y-100 FAQ

1.How can I place an order for DS1250Y-100 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1250Y-100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1250Y-100 reliable?

The price and inventory of DS1250Y-100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1250Y-100 is usually 5 days.

3.What payment methods are accepted for DS1250Y-100?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1250Y-100 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1250Y-100?

DS1250Y-100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1250Y-100 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1250Y-100?

For technical support, including DS1250Y-100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1250Y-100 requirements.

6.How does Aetrix verify that DS1250Y-100 is sourced from the original manufacturer or authorized distributors?

All DS1250Y-100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1250Y-100 meets industry standards.

7.What is the process for return or replacement of DS1250Y-100?

All DS1250Y-100 units undergo pre-shipment inspection (PSI). If there is an issue with DS1250Y-100, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1250Y-100 part is unused and in its original packaging.

Return procedure for DS1250Y-100:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DS1250Y-100 Tags

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