Analog Devices Inc./Maxim Integrated DS1250Y-100IND

Overview

DS1250Y-100IND from Maxim Integrated is a 4,194,304-bit (512k × 8) nonvolatile static RAM with integrated lithium backup, JEDEC-standard 32-pin DIP package, ±10% V_CC tolerance (4.5V–5.5V), and industrial temperature range (–40°C to +85°C). It delivers 70ns read/write access time, automatic power-loss data protection, and unlimited write cycles-used in mission-critical data logging and real-time control systems where volatile SRAM replacement is required without external support circuitry.

For engineers reviewing the DS1250Y-100IND datasheet, DS1250Y-100IND pinout, DS1250Y-100IND application, or DS1250Y-100IND equivalent, key selection criteria include guaranteed 10-year data retention without power, self-contained battery switching at ~3.0V, write-protection threshold of 4.25V, compatibility with standard 512k×8 byte-wide memory interfaces, and industrial-grade reliability for embedded instrumentation and telecom infrastructure.

Technical Context

The DS1250Y-100IND integrates SRAM, lithium energy source, and voltage-monitoring control circuitry into a monolithic JEDEC 32-pin DIP. Its power-fail detection triggers automatic write protection and battery switchover when V_CC drops below 4.25V, with full functional operation sustained down to 4.5V and data retention active below 3.0V.

It operates in three distinct modes: normal read/write (CE/WE/OE-controlled), automatic data retention (battery-powered, all I/O high-Z), and freshness-seal mode (lithium disconnected until first V_CC > 4.25V). Address decoding uses 19 address lines (A0–A18); data I/O is 8-bit bidirectional (DQ0–DQ7).

Key Specifications

Pinout & Package

DS1250Y-100IND uses a JEDEC-standard 32-pin Extended DIP (740-mil) package with integrated lithium battery and control logic. No external capacitor or supervisor IC is required.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK14CA8-NF55I and AS6C4008-70IN, DS1250Y-100IND uniquely delivers 5V ±10% operation, 10-year retention, and zero-support-circuitry integration in a drop-in 32-pin DIP-making it the sole solution for retrofitting legacy 5V systems with guaranteed long-term data survivability.

Availability

DS1250Y-100IND is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, and telecom base station control requiring stable component supply, long-lifecycle assurance, and RoHS-compliant through-hole packaging.

Supply support for DS1250Y-100IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs for industrial, automotive, and communications markets.

The DS1250Y-100IND belongs to Maxim's nonvolatile SRAM product line, engineered specifically for applications demanding seamless, zero-software, hardware-level data retention during unpredictable power loss-without compromising speed or footprint.

FAQ

What is the guaranteed data retention period for DS1250Y-100IND?

The DS1250Y-100IND guarantees a minimum 10-year data retention period in the absence of external power, measured from the time V_CC is first applied above 4.25V. This is ensured by factory-sealed lithium cell isolation (freshness seal), rigorous component screening, and built-in voltage monitoring that activates backup power below ~3.0V. The DS1250Y-100IND achieves this without external capacitors or supervisory circuits.

Does DS1250Y-100IND require external components to function as a nonvolatile SRAM?

No, DS1250Y-100IND requires no external components to operate as a fully functional nonvolatile SRAM. Its monolithic construction integrates the 512k×8 SRAM array, lithium energy source, voltage monitor, and power-switching circuitry into a single 32-pin DIP. Unlike volatile SRAMs paired with external supervisors, the DS1250Y-100IND handles power-fail detection, write protection, and battery switchover autonomously-eliminating BOM additions and layout overhead.

What is the write-protection threshold voltage for DS1250Y-100IND?

The DS1250Y-100IND asserts unconditional write protection when V_CC falls to 4.25V (minimum), with typical activation at 4.37V and maximum at 4.5V. This threshold is tighter than the DS1250AB variant (4.50–4.75V), enabling earlier safeguarding in wider-tolerance 5V systems. Once triggered, all address and data inputs become "don't care," outputs go high-impedance, and the lithium source powers the SRAM to preserve contents.

Can DS1250Y-100IND be used as a direct replacement for standard 512k×8 SRAMs?

Yes, DS1250Y-100IND is designed as a pin- and function-compatible replacement for industry-standard 512k×8 volatile SRAMs (e.g., AS6C4008, CY621506) in 32-pin DIP sockets. It matches the JEDEC 32-pin byte-wide footprint, supports identical CE/OE/WE control protocols, and offers identical 70ns access timing-requiring no PCB changes or firmware modifications when upgrading for nonvolatility.

Is DS1250Y-100IND qualified for industrial temperature operation?

Yes, DS1250Y-100IND is explicitly rated for industrial temperature operation from –40°C to +85°C, as indicated by the "IND" suffix. All DC and AC electrical specifications-including 70ns access time, 4.5V–5.5V V_CC range, and 10-year data retention-are guaranteed across this full range. It undergoes qualification testing per JEDEC JESD22 standards and is suitable for deployment in harsh environments such as factory automation and outdoor infrastructure.