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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1250Y-70IND

Name: DS1250Y-70IND
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1250Y-70IND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1250Y-70IND

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 32-DIP Module (0.600", 15.24mm)

Datasheet:: DS1250Y-70IND.pdf

Description:: IC NVSRAM 4MBIT PARALLEL 32EDIP

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Product details

Overview

DS1250Y-70IND from Maxim Integrated is a 4,194,304-bit (524,288 × 8) nonvolatile static RAM with lithium backup, JEDEC-standard 32-pin DIP package, ±10% V_CC tolerance (4.5V–5.5V), 70ns access time, and industrial temperature range (−40°C to +85°C). It replaces volatile SRAM, EEPROM, or Flash in battery-backed data logging systems requiring automatic write protection during power loss.

For engineers reviewing the DS1250Y-70IND datasheet, DS1250Y-70IND pinout, DS1250Y-70IND application, or DS1250Y-70IND equivalent, key selection criteria include guaranteed 10-year data retention without external power, self-contained lithium energy source with freshness seal, V_TP = 4.25V write-protection threshold, and compatibility with legacy 512k×8 byte-wide memory sockets.

Technical Context

The DS1250Y-70IND integrates SRAM, lithium battery, and voltage-monitoring control circuitry into a single monolithic DIP package. Its power-fail detection triggers automatic write protection when V_CC drops below 4.25V, then switches to battery power at ~3.0V to maintain data integrity.

It operates as a drop-in replacement for standard 32-pin 512k×8 SRAMs, supporting full read/write cycles with t_ACC = 70ns, t_RC = 70ns, and t_WC = 70ns under V_CC = 5V ±10%. All inputs become "don't care" and outputs go high-Z during data retention mode.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	4,194,304 bits (524,288 words × 8 bits); matches 512k×8 SRAM footprint and addressing.
Access Time	70 ns; ensures timing compatibility with 14.3 MHz bus systems using standard SRAM interface logic.
V_CC Range	4.5V to 5.5V (±10%); supports wide-input industrial power rails without external regulation.
Data Retention	10 years minimum without external power; enabled by sealed lithium cell and automatic V_CC-monitored switchover.
Operating Temp	−40°C to +85°C (IND grade); qualified for uncontrolled industrial environments including factory automation and remote telemetry.
Write Cycles	Unlimited; no wear-out mechanism-enables continuous logging without endurance management.
Package	32-pin 740-mil extended DIP (JEDEC MS-001); direct socket replacement for legacy SRAM designs.

Pinout & Package

DS1250Y-70IND uses a JEDEC-standard 32-pin extended DIP (740-mil) package with integrated lithium battery and control circuitry. No external backup components are required.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	19-bit address bus supporting full 524,288-word addressing; compatible with standard microprocessor address lines.
DQ0–DQ7	Data I/O	8-bit bidirectional data bus; TTL-compatible, supports high-speed read/write without bus transceivers.
CE	Chip Enable	Active-low chip select; enables memory access only when asserted-critical for multi-chip decoding.
WE	Write Enable	Active-low write strobe; controls write cycle initiation and output driver disable during writes.
OE	Output Enable	Active-low output enable; allows data bus sharing via three-state control independent of CE.
V_CC	Power Supply	+5V supply input; powers SRAM core and monitoring circuitry; ±10% tolerance accommodates brownout conditions.
GND	Ground	Reference return path for all signals and internal battery switching; requires low-impedance PCB connection.
NC	No Connect	Unused pins (pins 1, 2, 3, 32); must remain unconnected-no routing or grounding permitted.

Key Features

Feature	Design Value
Automatic Power-Fail Protection	Monitors V_CC continuously; asserts unconditional write protection and switches to lithium backup within 1.5 µs of out-of-tolerance detection.
Freshness Seal	Lithium cell electrically disconnected until first V_CC > 4.25V application-ensures full 10-year retention capacity from installation.
Zero External Support Circuitry	Requires no external capacitors, regulators, or supervisory ICs-reduces BOM count and layout complexity.
Unlimited Write Endurance	Eliminates write-cycle counting, wear-leveling firmware, or write-delay logic in host systems.
Standardized Pinout	Matches industry-standard 32-pin 512k×8 SRAM layout-enables direct PCB replacement without redesign.

Applications

Industrial Data Logger	Medical Device Memory Backup
Use Scenario: Continuous recording of sensor readings (temperature, pressure, flow) in programmable logic controllers during mains failure. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time operational history with automatic failover to lithium power at V_CC < 4.25V. Use Value: Guarantees zero data loss across unpredictable power interruptions-critical for regulatory compliance and fault analysis.	Use Scenario: Storing calibration coefficients, patient session logs, and diagnostic timestamps in portable ultrasound units. IC Role / Device Role / Timing Role: Battery-backed memory preserving critical configuration and event data between device power cycles. Use Value: Meets IEC 62304 Class C software requirements for persistent state retention without external battery management.
Avionics Black Box Recorder	Smart Grid RTU Memory
Use Scenario: Capturing flight control parameters and cockpit voice data in commercial aircraft recorders operating across −40°C to +85°C ambient. IC Role / Device Role / Timing Role: Industrial-grade NV SRAM providing deterministic 70ns access and 10-year retention in vibration-prone, wide-temperature environments. Use Value: Eliminates need for separate EEPROM+SRAM combinations-reducing component count and qualification burden for DO-160 testing.	Use Scenario: Storing metering intervals, outage records, and firmware update staging data in utility substation remote terminal units. IC Role / Device Role / Timing Role: Direct-replacement memory for legacy RTU designs requiring field-upgradeable, tamper-proof storage. Use Value: Enables seamless integration into existing 512k×8 memory sockets while adding automatic power-loss protection per IEEE 1377.

Industrial Data Logger

Medical Device Memory Backup

Use Scenario: Continuous recording of sensor readings (temperature, pressure, flow) in programmable logic controllers during mains failure.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time operational history with automatic failover to lithium power at V_CC < 4.25V.

Use Value: Guarantees zero data loss across unpredictable power interruptions-critical for regulatory compliance and fault analysis.

Use Scenario: Storing calibration coefficients, patient session logs, and diagnostic timestamps in portable ultrasound units.

IC Role / Device Role / Timing Role: Battery-backed memory preserving critical configuration and event data between device power cycles.

Use Value: Meets IEC 62304 Class C software requirements for persistent state retention without external battery management.

Avionics Black Box Recorder

Smart Grid RTU Memory

Use Scenario: Capturing flight control parameters and cockpit voice data in commercial aircraft recorders operating across −40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Industrial-grade NV SRAM providing deterministic 70ns access and 10-year retention in vibration-prone, wide-temperature environments.

Use Value: Eliminates need for separate EEPROM+SRAM combinations-reducing component count and qualification burden for DO-160 testing.

Use Scenario: Storing metering intervals, outage records, and firmware update staging data in utility substation remote terminal units.

IC Role / Device Role / Timing Role: Direct-replacement memory for legacy RTU designs requiring field-upgradeable, tamper-proof storage.

Use Value: Enables seamless integration into existing 512k×8 memory sockets while adding automatic power-loss protection per IEEE 1377.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1250AB-70IND+	Narrower V_CC tolerance (±5%, 4.75V–5.25V); higher V_TP = 4.50V; identical pinout, speed, and temperature rating.	Better suited for regulated 5V systems where tighter supply stability is guaranteed.	Select DS1250AB-70IND+ if system V_CC variation is controlled to ±5%; otherwise DS1250Y-70IND provides wider margin.
STK15C88-70I	Same 512k×8 organization and 70ns speed, but uses capacitor-based backup (not lithium); 10-year retention not guaranteed; different pinout (32-pin SOJ).	Lower cost alternative where long-term retention is secondary to short-term hold-up time (e.g., <1 hour).	Choose STK15C88-70I only for cost-sensitive, short-duration backup needs-DS1250Y-70IND delivers proven 10-year retention with lithium.

Compared with DS1250AB-70IND+, DS1250Y-70IND offers broader V_CC tolerance for unregulated industrial rails, while STK15C88-70I lacks guaranteed long-term retention and requires PCB redesign due to SOJ packaging.

Availability

DS1250Y-70IND is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, avionics black box recorders, and smart grid RTUs requiring stable component supply across extended temperature and long lifecycle deployments.

Supply support for DS1250Y-70IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications applications.

The DS1250Y-70IND belongs to Maxim's nonvolatile SRAM product line, engineered specifically for mission-critical data retention in systems where power interruption is frequent or unpredictable.

FAQ

What is the guaranteed data retention period for DS1250Y-70IND?

The DS1250Y-70IND guarantees a minimum 10-year data retention period in the absence of external power, measured from the time V_CC is first applied and the internal lithium energy source is activated. This specification is assured through component selection, process control, and design-not production-tested per unit.

Does DS1250Y-70IND require external circuitry for battery backup operation?

No, DS1250Y-70IND requires no external circuitry for battery backup operation. It integrates a lithium energy source, voltage-monitoring control logic, and SRAM into a single 32-pin DIP package. The internal switch disconnects the battery until first power-up, ensuring full capacity retention.

What is the write-protection threshold voltage for DS1250Y-70IND?

The DS1250Y-70IND has a write-protection threshold voltage (V_TP) of 4.25V (min) to 4.50V (max). When V_CC falls below this range, the device automatically disables write capability and transitions to battery-backed data retention mode.

Can DS1250Y-70IND be used as a direct replacement for standard 512k×8 SRAMs?

Yes, DS1250Y-70IND uses a JEDEC-standard 32-pin 740-mil DIP package with identical pinout and timing (70ns access) to conventional 512k×8 SRAMs. It connects directly to existing sockets without PCB modification or additional support components.

What is the operating temperature range specified for DS1250Y-70IND?

The DS1250Y-70IND is rated for industrial temperature operation from −40°C to +85°C. This range is validated across all DC and AC electrical characteristics, including access time, standby current, and write-protection behavior.

DS1250Y-70IND Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 32-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 4Mbit

Memory Organization:: 512K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 32-EDIP

DS1250Y-70IND FAQ

1.How can I place an order for DS1250Y-70IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1250Y-70IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1250Y-70IND reliable?

The price and inventory of DS1250Y-70IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1250Y-70IND is usually 5 days.

3.What payment methods are accepted for DS1250Y-70IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1250Y-70IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1250Y-70IND?

DS1250Y-70IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1250Y-70IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1250Y-70IND?

For technical support, including DS1250Y-70IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1250Y-70IND requirements.

6.How does Aetrix verify that DS1250Y-70IND is sourced from the original manufacturer or authorized distributors?

All DS1250Y-70IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1250Y-70IND meets industry standards.

7.What is the process for return or replacement of DS1250Y-70IND?

All DS1250Y-70IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1250Y-70IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1250Y-70IND part is unused and in its original packaging.

Return procedure for DS1250Y-70IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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