Analog Devices Inc./Maxim Integrated DS1258Y-100#
- Part No.:
- DS1258Y-100#
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 40-DIP Module (0.610", 15.495mm)
- Datasheet:
-
DS1258Y-100#.pdf
- Description:
- IC NVSRAM 2MBIT PARALLEL 40EDIP
- Quantity:
- Payment:

- Shipping:

Inventory:4,366
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DS1258Y-100# from Maxim Integrated (now Analog Devices) is a 128k × 16-bit nonvolatile SRAM with integrated lithium battery backup, 10-year data retention, 100 ns access time, and 5 V ±10% supply operation. It functions as a drop-in NV memory replacement in industrial control systems requiring persistent RAM without external support circuitry.
For engineers reviewing the DS1258Y-100# datasheet, DS1258Y-100# pinout, DS1258Y-100# application, or DS1258Y-100# equivalent, key selection factors include write-protection threshold (4.25 V), byte-select capability via CEU/CEL, industrial-grade temperature option, and 40-pin 740-mil extended DIP package compatibility.
Technical Context
The DS1258Y-100# implements autonomous power-fail detection using internal voltage monitoring that triggers seamless lithium source activation below ~3.0 V, enabling uninterrupted data retention. Its dual chip-enable architecture (CEU/CEL) enables independent upper- and lower-byte access without external logic.
It operates in three distinct modes: normal read/write (VCC ≥ 4.5 V), automatic write-protect (VCC < 4.25 V), and battery-backed retention (VCC < 3.0 V). All address and data lines remain high-impedance during power-down, eliminating bus contention risks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 131,072 × 16-bit (128k × 16); supports full-word or byte-select access |
| Access Time | 100 ns max; defines minimum cycle time for reliable microprocessor interfacing |
| Supply Voltage Range | 4.5 V to 5.5 V; accommodates wider tolerance than AB variant (±10% vs ±5%) |
| Write Protection Threshold | 4.25 V min; initiates automatic hardware write lock before data corruption risk |
| Data Retention | 10 years minimum without external power; guaranteed by sealed lithium cell and low-leakage design |
| Operating Temperature | 0°C to +70°C standard; IND version extends to –40°C to +85°C |
| Package | 40-pin, 740-mil extended DIP; compatible with legacy through-hole PCB layouts |
Pinout & Package
DS1258Y-100# uses a 40-pin 740-mil extended dual in-line package (DIP) with 0.100" row spacing and 0.300" body width. Pin 1 is marked by notch or dot; pins are arranged in two parallel rows of 20.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus; selects one of 131,072 words (217) |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; supports full-word or byte-wide transfers |
| CEU / CEL | Chip Enable (Upper/Lower Byte) | Independent enable controls for DQ8–DQ15 and DQ0–DQ7; eliminates need for external byte-select logic |
| WE | Write Enable | Active-low signal initiating write cycle; output drivers disabled during write to prevent contention |
| OE | Output Enable | Active-low control for data outputs; high during write to maintain high-Z state |
| VCC / GND | Power / Ground | +5 V supply and reference; internal voltage monitor derives write-protect and battery-switching thresholds |
Key Features
| Feature | Design Value |
|---|---|
| Integrated lithium energy source | Fully sealed and electrically disconnected until first power-up, preserving 100% capacity for full 10-year retention life |
| Automatic power-fail response | Monitors VCC continuously; switches to battery and locks writes within microseconds when voltage drops below 4.25 V |
| Byte-select architecture | Dual CEU/CEL inputs enable true 8-bit access granularity without external gating or address decoding |
| No external support circuitry required | Self-contained control logic eliminates need for external supervisors, backup capacitors, or write-protect latches |
| High noise immunity | Input thresholds (VIH = 2.2 V, VIL = 0.8 V) ensure robust TTL/CMOS compatibility across voltage and temperature |
Applications
| Industrial PLC Memory | Medical Device Configuration Storage |
|---|---|
Use Scenario: Storing runtime parameters and calibration data in programmable logic controllers where mains power interruption is common. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-access, battery-backed memory with zero software overhead. Use Value: Eliminates boot-time configuration reload and prevents loss of operational state during brownouts. | Use Scenario: Retaining patient-specific therapy settings and device calibration in portable infusion pumps and diagnostic monitors. IC Role / Device Role / Timing Role: Primary nonvolatile storage for critical setup data with deterministic 100 ns access during active treatment cycles. Use Value: Ensures regulatory-compliant data persistence without reliance on firmware-managed EEPROM wear leveling. |
| Avionics Data Logging Buffer | Test Equipment Firmware Parameter Cache |
Use Scenario: Capturing flight sensor snapshots in black-box recorders where power may be lost abruptly during fault conditions. IC Role / Device Role / Timing Role: High-speed, self-protecting memory buffer that preserves last-valid data upon voltage collapse. Use Value: Guarantees integrity of final pre-failure telemetry without external voltage-monitoring ICs or delay circuits. | Use Scenario: Caching instrument calibration coefficients and user-defined test sequences in automated bench testers. IC Role / Device Role / Timing Role: Low-latency, wear-free parameter store accessed repeatedly during test execution loops. Use Value: Avoids EEPROM endurance limits and write latency bottlenecks while maintaining data across power cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1258AB-100# | Tighter VCC tolerance (±5% vs ±10%); higher write-protection threshold (4.50 V vs 4.25 V) | Better suited for stable 5 V rails; less tolerant of voltage sag during brownout transitions | Select DS1258AB-100# only if system VCC regulation meets ±5% spec and brownout duration is short |
| STK12C68-AW50I | Same 128k×16 organization but 50 ns access; uses external capacitor for backup instead of integrated lithium | Requires external 0.47 F tantalum capacitor and supervisor IC; shorter retention (typically 5 years) | Choose STK12C68-AW50I only when long-term lithium maintenance is prohibited or RoHS battery restrictions apply |
Compared with DS1258AB-100# and STK12C68-AW50I, the DS1258Y-100# provides optimal balance of voltage margin, autonomous protection timing, and maintenance-free 10-year retention-making it preferred for unattended industrial and medical systems where reliability outweighs raw speed.
Availability
DS1258Y-100# is available at Aetrix Electronics and suitable for industrial PLCs, medical instrumentation, avionics data loggers, and automated test equipment requiring stable component supply and long-term lifecycle assurance.
Supply support for DS1258Y-100# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (acquired by Analog Devices in 2021) designs precision analog, mixed-signal, and nonvolatile memory solutions for demanding industrial, medical, and automotive applications.
The DS1258Y-100# belongs to Maxim's legacy nonvolatile SRAM product line, engineered specifically to replace discrete NV memory subsystems with single-chip reliability, eliminating external battery management and write-protection logic.
FAQ
What is the guaranteed data retention period for DS1258Y-100#?
The DS1258Y-100# guarantees a minimum 10-year data retention period in the absence of external power, measured from the time VCC is first applied. This is ensured by factory-sealed lithium energy source and low-leakage CMOS design-no periodic refresh or external conditioning is required during retention.
Does DS1258Y-100# require external components to function as nonvolatile memory?
No, the DS1258Y-100# requires no external components to deliver full nonvolatile functionality. Its integrated lithium cell, voltage monitor, and automatic power-switching circuit eliminate the need for backup capacitors, supervisors, or write-protect latches-only VCC, GND, address, data, and control signals are needed.
How does DS1258Y-100# handle partial power failure or brownout conditions?
When VCC falls below 4.25 V, the DS1258Y-100# immediately disables writes and places all I/O pins in high-impedance state. At ~3.0 V, it seamlessly switches to lithium power and maintains data integrity-no software intervention or external detection circuitry is required.
Can DS1258Y-100# be used interchangeably with DS1258AB-100# on the same PCB?
Yes, DS1258Y-100# and DS1258AB-100# share identical pinout, package, timing, and logic interface-but differ in VCC tolerance (±10% vs ±5%) and write-protection threshold (4.25 V vs 4.50 V). Swapping requires verification that system VCC remains ≥4.5 V under worst-case conditions.
Is DS1258Y-100# RoHS compliant and lead-free?
Yes, DS1258Y-100# is RoHS compliant and lead-free, as indicated by the "#" suffix in the part number per Maxim's ordering nomenclature. It meets EU Directive 2011/65/EU and subsequent amendments, including exemption 7a for lead in high-melting-temperature type solders.
DS1258Y-100# Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 40-DIP Module (0.610", 15.495mm)
- Packaging:
- Box
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 40-EDIP
DS1258Y-100# FAQ
1.How can I place an order for DS1258Y-100# through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1258Y-100# on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1258Y-100# reliable?
The price and inventory of DS1258Y-100# are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1258Y-100# is usually 5 days.
3.What payment methods are accepted for DS1258Y-100#?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1258Y-100# transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1258Y-100#?
DS1258Y-100# orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1258Y-100# order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1258Y-100#?
For technical support, including DS1258Y-100# datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1258Y-100# requirements.
6.How does Aetrix verify that DS1258Y-100# is sourced from the original manufacturer or authorized distributors?
All DS1258Y-100# products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1258Y-100# meets industry standards.
7.What is the process for return or replacement of DS1258Y-100#?
All DS1258Y-100# units undergo pre-shipment inspection (PSI). If there is an issue with DS1258Y-100#, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1258Y-100# part is unused and in its original packaging.
Return procedure for DS1258Y-100#:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1258Y-100# Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An engineering guide to open-collector, open-drain and push-pull outputs, including pull-up resistor limits, rise-time calculations, wired logic, voltage translation and power-off checks.
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

