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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1265AB-70+

Name: DS1265AB-70+
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1265AB-70+
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1265AB-70+

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 36-DIP Module (0.610", 15.49mm)

Datasheet:: DS1265AB-70+.pdf

Description:: IC NVSRAM 8MBIT PARALLEL 36EDIP

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Product details

Overview

DS1265AB-70+ from Maxim Integrated is an 8M-bit (1,048,576 × 8) nonvolatile static RAM with integrated lithium battery backup, 70 ns access time, ±5% V_CC tolerance (4.75–5.25 V), and automatic write protection below 4.5 V. It operates in commercial temperature range (0°C to +70°C) and is used in mission-critical data logging systems where power loss resilience is essential.

For engineers reviewing the DS1265AB-70+ datasheet, DS1265AB-70+ pinout, DS1265AB-70+ application, or DS1265AB-70+ equivalent, key selection criteria include guaranteed 10-year data retention without external power, unlimited write cycles, CMOS-compatible timing, and self-contained power-fail detection and switchover logic.

Technical Context

The DS1265AB-70+ integrates a 8M-bit SRAM array with on-chip lithium battery management circuitry that monitors V_CC continuously. When V_CC drops below 4.5 V (V_TP), it unconditionally enables write protection and switches to battery power at ~3.0 V.

It supports standard parallel microprocessor interface timing: CE/WE/OE-controlled read/write cycles, 70 ns t_ACC and t_RC, and high-impedance outputs during deselect or write. All inputs become don't-care and outputs go Hi-Z during power-down transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	8,388,608 bits (1,048,576 × 8), enabling byte-wide microcontroller data buffering without external address latching
Access Time	70 ns maximum - meets timing requirements for 14 MHz bus operation with zero wait states
V_CC Range	4.75 V to 5.25 V (±5%) - compatible with tightly regulated 5 V rails in industrial control and telecom systems
Data Retention	10 years minimum without external power - verified via component-level design and process control, not production-tested per unit
Write Protection Threshold	4.50–4.75 V (V_TP) - triggers unconditional write lock before supply collapse corrupts memory contents
Operating Temperature	0°C to +70°C - qualified for commercial-grade embedded instrumentation and point-of-sale terminals
Package	36-pin 740-mil Extended DIP (EDIP) - through-hole mounting with 0.9-inch width, compatible with legacy PCB layouts

Pinout & Package

DS1265AB-70+ uses a 36-pin Extended Dual In-line Package (EDIP), 740 mil wide, with through-hole leads. Pin 1 is marked by a notch or dot; pins are numbered counter-clockwise starting from top-left corner.

Pin/Terminal	Circuit Role	Design Meaning
A0–A19	Address Inputs	20-bit address bus accepting full 1M-word addressing; all must remain stable during read/write cycles
DQ0–DQ7	Bidirectional Data I/O	8-bit parallel data path; high-impedance when CE=high or during write if OE=high
CE	Chip Enable	Active-low chip select; falling edge initiates access; rising edge terminates cycle or forces Hi-Z output
WE	Write Enable	Active-low write strobe; controls data direction and disables outputs during write if OE=low
OE	Output Enable	Active-low output gate; must be high during writes to prevent bus contention
V_CC	Power Supply	+5 V ±5% main supply; powers SRAM core and control logic; monitored for fail-detect switchover
GND	Ground Reference	Signal and power return; required for proper lithium switch activation and timing reference
NC	No Connect	Pins 12, 23, 24, and 33 are internally unused; must remain unconnected per datasheet

Key Features

Feature	Design Value
Automatic Power-Fail Switchover	Hardware-monitored V_CC decay triggers seamless lithium backup activation at ~3.0 V, eliminating firmware intervention
Freshness Seal	Lithium cell remains electrically disconnected until first V_CC application > V_TP, preserving full 10-year capacity from shipment
Unlimited Write Cycles	No endurance limit on SRAM writes - eliminates wear-leveling logic and extends system lifetime in high-frequency logging
Self-Contained Write Protection	Hardware-enforced lockout below V_TP prevents partial writes and bit corruption during brownout conditions
Low-Power Standby	100–200 µA ICCS2 current when CE held at V_CC–0.5 V - suitable for battery-backed standby in portable equipment

Applications

Industrial Data Logger	Medical Device Memory Buffer
Use Scenario: Continuous acquisition of sensor readings in factory-floor PLCs with unpredictable mains interruptions. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time process variables; retains data across unplanned outages without external capacitors or controllers. Use Value: Eliminates need for EEPROM write delays or flash wear management; guarantees atomic 8-bit updates with 70 ns latency and no software overhead.	Use Scenario: Storing patient vital sign history in portable ECG monitors between clinical uploads. IC Role / Device Role / Timing Role: Battery-backed memory buffer holding timestamped waveform segments; survives removal of main battery for servicing. Use Value: Provides deterministic 10-year data retention without periodic refresh; avoids data loss during hot-swap events or low-battery shutdowns.
Point-of-Sale Terminal	Telecom Base Station Control
Use Scenario: Preserving transaction journal entries during AC power failure in retail kiosks. IC Role / Device Role / Timing Role: Primary working memory with instant failover; holds last 10,000 transactions in volatile SRAM image backed by internal lithium. Use Value: Enables immediate resume after power restoration; no checksum validation or recovery routines needed due to hardware-enforced write lock.	Use Scenario: Maintaining configuration registers and alarm logs in remote radio units exposed to grid instability. IC Role / Device Role / Timing Role: Configuration storage element interfacing directly to ARM9 or MIPS-based baseband processors via parallel bus. Use Value: Delivers 70 ns access for real-time register reads while guaranteeing integrity during voltage sags common in outdoor cabinet environments.

Industrial Data Logger

Medical Device Memory Buffer

Use Scenario: Continuous acquisition of sensor readings in factory-floor PLCs with unpredictable mains interruptions.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time process variables; retains data across unplanned outages without external capacitors or controllers.

Use Value: Eliminates need for EEPROM write delays or flash wear management; guarantees atomic 8-bit updates with 70 ns latency and no software overhead.

Use Scenario: Storing patient vital sign history in portable ECG monitors between clinical uploads.

IC Role / Device Role / Timing Role: Battery-backed memory buffer holding timestamped waveform segments; survives removal of main battery for servicing.

Use Value: Provides deterministic 10-year data retention without periodic refresh; avoids data loss during hot-swap events or low-battery shutdowns.

Point-of-Sale Terminal

Telecom Base Station Control

Use Scenario: Preserving transaction journal entries during AC power failure in retail kiosks.

IC Role / Device Role / Timing Role: Primary working memory with instant failover; holds last 10,000 transactions in volatile SRAM image backed by internal lithium.

Use Value: Enables immediate resume after power restoration; no checksum validation or recovery routines needed due to hardware-enforced write lock.

Use Scenario: Maintaining configuration registers and alarm logs in remote radio units exposed to grid instability.

IC Role / Device Role / Timing Role: Configuration storage element interfacing directly to ARM9 or MIPS-based baseband processors via parallel bus.

Use Value: Delivers 70 ns access for real-time register reads while guaranteeing integrity during voltage sags common in outdoor cabinet environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1265Y-70+	Wider V_CC tolerance (±10%, 4.5–5.5 V); lower V_TP (4.25–4.5 V); same speed, package, and retention	Suitable for less-regulated 5 V supplies; earlier write protection may reduce usable window during slow brownouts	Select DS1265Y-70+ only if system V_CC varies beyond ±5% and brownout response timing permits earlier lockout
STK12C68-A70	Same 8M-bit size and 70 ns speed but uses external battery; no built-in V_CC monitoring or automatic switchover logic	Requires external diode-OR, supervisor IC, and battery holder; increases BOM count and board area	Choose STK12C68-A70 only when long-term supply chain availability of integrated solutions is uncertain or cost-driven redesign is acceptable

Compared with DS1265Y-70+, the DS1265AB-70+ provides tighter supply regulation margin and later write protection onset, improving compatibility with stable 5 V rails; versus STK12C68-A70, it delivers turnkey reliability with zero external components for battery management and failover control.

Availability

DS1265AB-70+ is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory buffers, and point-of-sale terminals requiring stable component supply, long-life data retention, and drop-in compatibility with legacy 36-pin EDIP footprints.

Supply support for DS1265AB-70+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications markets.

The DS1265AB-70+ belongs to Maxim's nonvolatile SRAM product line, engineered specifically for systems demanding zero-software, hardware-guaranteed data persistence during uncontrolled power loss.

FAQ

What is the guaranteed data retention period for DS1265AB-70+ without external power?

The DS1265AB-70+ guarantees a minimum 10-year data retention period in the absence of external power. This specification is assured through component selection, process control, and design - not measured per unit during production testing. The lithium energy source remains disconnected until first V_CC application, preserving full capacity from shipment. DS1265AB-70+ achieves this without requiring external circuitry or user-initiated refresh cycles.

Does DS1265AB-70+ require external support components for battery backup operation?

No, DS1265AB-70+ requires no external support components for battery backup operation. It integrates a lithium energy source, voltage monitor, power-switching circuitry, and write-protection logic into a single 36-pin EDIP package. The internal circuitry automatically disconnects the lithium cell until first power-up, detects V_CC decay below 4.5 V, and switches to battery power at ~3.0 V - all without external supervisors, diodes, or capacitors. DS1265AB-70+ is designed for true plug-and-play nonvolatility.

What is the difference between DS1265AB-70+ and DS1265Y-70+?

The DS1265AB-70+ and DS1265Y-70+ share identical speed (70 ns), memory size (8M-bit), package (36-pin EDIP), and data retention (10 years), but differ in V_CC tolerance and write-protection threshold. DS1265AB-70+ operates at 4.75–5.25 V (±5%) and locks writes below 4.5–4.75 V; DS1265Y-70+ accepts 4.5–5.5 V (±10%) and triggers protection at 4.25–4.5 V. DS1265AB-70+ is preferred for tightly regulated supplies where delayed lockout improves brownout margin.

Can DS1265AB-70+ be used in industrial temperature environments?

No, DS1265AB-70+ is rated for commercial temperature range only (0°C to +70°C). For industrial operation (-40°C to +85°C), the correct variant is DS1265AB-70IND+, which shares all electrical and functional specifications of DS1265AB-70+ but is qualified across the extended temperature range. Using DS1265AB-70+ outside its specified 0°C to +70°C range may result in unreliable V_TP detection, reduced data retention, or premature lithium depletion. DS1265AB-70+ must not be substituted for DS1265AB-70IND+ in thermally demanding applications.

How does DS1265AB-70+ handle bus contention during write cycles?

DS1265AB-70+ prevents bus contention during write cycles by disabling its output drivers when OE is held high (inactive), regardless of CE or WE state. If OE is accidentally active (low) during a write, the falling edge of WE forces outputs into high-impedance within 25 ns (t_ODW). This ensures DQ lines never drive conflicting logic levels onto the shared data bus. DS1265AB-70+ implements this behavior entirely in hardware, requiring no timing-critical software coordination.

DS1265AB-70+ Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 36-DIP Module (0.610", 15.49mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 8Mbit

Memory Organization:: 1M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 4.75V ~ 5.25V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 36-EDIP

DS1265AB-70+ FAQ

1.How can I place an order for DS1265AB-70+ through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1265AB-70+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1265AB-70+ reliable?

The price and inventory of DS1265AB-70+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1265AB-70+ is usually 5 days.

3.What payment methods are accepted for DS1265AB-70+?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1265AB-70+ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1265AB-70+?

DS1265AB-70+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1265AB-70+ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1265AB-70+?

For technical support, including DS1265AB-70+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1265AB-70+ requirements.

6.How does Aetrix verify that DS1265AB-70+ is sourced from the original manufacturer or authorized distributors?

All DS1265AB-70+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1265AB-70+ meets industry standards.

7.What is the process for return or replacement of DS1265AB-70+?

All DS1265AB-70+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1265AB-70+, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1265AB-70+ part is unused and in its original packaging.

Return procedure for DS1265AB-70+:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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