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Analog Devices Inc./Maxim Integrated DS1265AB-70IND
- Part No.:
- DS1265AB-70IND
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 36-DIP Module (0.610", 15.49mm)
- Datasheet:
-
DS1265AB-70IND.pdf
- Description:
- IC NVSRAM 8MBIT PARALLEL 36EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,043
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Product details
Overview
DS1265AB-70IND from Maxim Integrated (now Analog Devices) is an 8M-bit nonvolatile static RAM with lithium battery backup, organized as 1,048,576 × 8, operating at 5V ±5%, with 70 ns read/write access time and industrial temperature range (-40°C to +85°C). It provides automatic write protection during power loss and guarantees 10-year data retention without external power.
For engineers reviewing the DS1265AB-70IND datasheet, DS1265AB-70IND pinout, DS1265AB-70IND application, or DS1265AB-70IND equivalent, key selection considerations include VTP = 4.50–4.75 V write-protection threshold, 36-pin 740-mil extended DIP package, standby current ≤200 µA (CE = VCC−0.5 V), and full compatibility with standard SRAM bus protocols.
Technical Context
The DS1265AB-70IND integrates a self-contained lithium energy source and voltage-monitoring circuitry that triggers automatic switchover to battery backup when VCC falls below 4.5 V, disabling all inputs and placing outputs in high-impedance state. Its CMOS architecture supports unlimited write cycles and eliminates need for external support circuitry.
It operates in three distinct modes: normal read/write (VCC ≥ 4.75 V), write-protected standby (4.5 V ≤ VCC < 4.75 V), and battery-retention mode (VCC < ~3.0 V), with deterministic timing parameters including tACC = 70 ns, tWC = 70 ns, and tPD = 1.5 µs fail-detect latency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 8,388,608 bits (1,048,576 × 8) - directly replaces standard 1-Mbyte SRAMs with no address decoding changes |
| Access Time | 70 ns - enables direct interface with 14 MHz microprocessors without wait states |
| VCC Range | 4.75 V to 5.25 V (±5%) - ensures stable operation across noisy industrial 5V rails |
| Write Protection Threshold | VTP = 4.50–4.75 V - initiates automatic data safeguarding before brownout-induced corruption |
| Data Retention | 10 years minimum without power - guaranteed by sealed lithium cell and internal power-switching logic |
| Operating Temperature | -40°C to +85°C - qualified for industrial control, metering, and automotive under-hood environments |
| Standby Current | ≤200 µA (CE = VCC−0.5 V) - enables low-power retention in battery-backed systems |
Pinout & Package
DS1265AB-70IND uses a 36-pin 740-mil extended dual in-line package (EDIP), RoHS-compliant (indicated by '+' suffix), with through-hole mounting and wave/hand-solder compatible leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1-Mbyte addressing; tolerant of slow-rising edges per tAW = 0 ns setup requirement |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; high-impedance on deselect or during write to prevent bus contention |
| CE | Chip Enable | Active-low chip select; controls device activation and participates in write-cycle timing (tWR2, tDH2) |
| WE | Write Enable | Active-low write strobe; determines write start/stop edges and disables outputs within tODW = 25 ns |
| OE | Output Enable | Active-low output control; enables data reads only when CE and WE are inactive (high) |
| VCC | Power Supply | +5V ±5% main supply; powers logic and enables lithium switch-on at first power-up (VTP threshold) |
| GND | Ground | Reference return path for all signals and internal switching circuitry |
| NC | No Connect | Pins 12, 24, and 35 are unconnected - must remain floating, not tied to VCC or GND |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Detection | Monitors VCC continuously and initiates write protection within 1.5 µs when falling below VTP |
| Lithium Freshness Seal | Lithium cell remains electrically disconnected until first VCC application > VTP, preserving full 10-year capacity |
| Unlimited Write Endurance | No wear-out mechanism - supports infinite SRAM-style writes without degradation or refresh overhead |
| Zero-External-Support Operation | Requires no external capacitors, supervisors, or backup controllers - fully autonomous NV-SRAM functionality |
| Industrial Temperature Qualification | Guaranteed AC/DC performance across -40°C to +85°C, including tACC, tWC, and VTP stability |
Applications
| Smart Energy Metering | Industrial PLC Data Logging |
|---|---|
Use Scenario: Storing tariff schedules, consumption history, and firmware configuration in electricity meters deployed in outdoor substations. IC Role / Device Role / Timing Role: Nonvolatile memory holding critical billing data during grid outages and cold starts. Use Value: Eliminates supercapacitor or external battery management, reducing BOM count while guaranteeing 10-year data integrity at -40°C. | Use Scenario: Capturing sensor readings and alarm timestamps in programmable logic controllers operating in factory automation cabinets. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving last-known state and diagnostic logs during unexpected AC loss. Use Value: Enables deterministic recovery after power interruption without software-initiated save routines or EEPROM wear leveling. |
| Medical Device Configuration Storage | Avionics Black Box Memory |
Use Scenario: Retaining calibration coefficients, user preferences, and audit trails in portable ultrasound and infusion pumps. IC Role / Device Role / Timing Role: Fail-safe memory ensuring regulatory-compliant data persistence across battery swaps and sterilization cycles. Use Value: Meets IEC 62304 requirements for Class C software with zero write-cycle limitations and validated 10-year retention. | Use Scenario: Recording flight parameters and system status in aircraft flight data recorders where power may be lost mid-flight. IC Role / Device Role / Timing Role: High-reliability nonvolatile buffer capturing real-time telemetry during emergency shutdown sequences. Use Value: Guarantees sub-microsecond VCC fail detection and immediate write lockout, preventing partial or corrupted frame writes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK12C68 | 5V ±10% operation, 100 ns access time, same 8M-bit density but higher standby current (1 mA typical) | Targeted at commercial-grade instrumentation; lacks industrial temp rating and tighter VTP tolerance | Select when cost sensitivity outweighs speed and temperature requirements |
| DS1248Y-120IND+ | 4M-bit density, 120 ns access, wider VCC range (4.5–5.5 V), same IND temp grade and lithium backup | Suitable for legacy designs requiring slower timing or lower memory footprint | Choose when board space or timing margin allows larger access time and reduced capacity suffices |
Compared with STK12C68 and DS1248Y-120IND+, the DS1265AB-70IND delivers faster 70 ns access, tighter ±5% VCC regulation, and lower standby current - making it optimal for new industrial designs demanding high-speed, low-power, and wide-temperature nonvolatile storage.
Availability
DS1265AB-70IND is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, and medical device configuration storage requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant through-hole packaging.
Supply support for DS1265AB-70IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (acquired by Analog Devices in 2021) is a U.S.-based semiconductor company specializing in high-performance analog, mixed-signal, and power management ICs for industrial, automotive, and communications markets.
The DS1265AB-70IND belongs to Maxim's nonvolatile SRAM product line, engineered specifically for mission-critical data retention in environments where power reliability cannot be assumed - emphasizing autonomy, longevity, and seamless microprocessor integration.
FAQ
What is the guaranteed data retention period for DS1265AB-70IND?
The DS1265AB-70IND guarantees a minimum 10-year data retention period in the absence of external power, measured cumulatively from first VCC application. This is ensured by factory-sealed lithium cell design, internal voltage monitoring, and power-switching circuitry - not extrapolated or estimated.
Does DS1265AB-70IND require external circuitry for battery backup operation?
No, the DS1265AB-70IND requires no external circuitry for battery backup operation. Its integrated lithium energy source and automatic power-fail detection logic handle switchover, write protection, and data retention autonomously - eliminating need for supervisors, capacitors, or charge controllers.
What is the write protection voltage threshold (VTP) for DS1265AB-70IND?
The DS1265AB-70IND has a write protection voltage threshold VTP of 4.50 V (min) to 4.75 V (max). When VCC drops below this range, the device automatically disables writes, places outputs in high-impedance, and prepares for lithium backup - a hardwired behavior confirmed in the datasheet's DATA RETENTION MODE section.
Is DS1265AB-70IND pin-compatible with standard 36-pin SRAMs?
Yes, the DS1265AB-70IND uses a standard 36-pin 740-mil EDIP footprint with identical pin assignments (A0–A19, DQ0–DQ7, CE, WE, OE, VCC, GND, NC) as industry-standard 8M-bit SRAMs - enabling drop-in replacement without PCB layout changes.
How does DS1265AB-70IND handle power-up sequencing?
During power-up, the DS1265AB-70IND waits until VCC exceeds ~3.0 V before connecting external supply to the RAM array and disconnecting the lithium source. Full functional operation resumes only after VCC stabilizes above 4.75 V, with tREC = 125 ms recovery time to end write protection - all internally managed without host intervention.
DS1265AB-70IND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 36-DIP Module (0.610", 15.49mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 36-EDIP
DS1265AB-70IND FAQ
1.How can I place an order for DS1265AB-70IND through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1265AB-70IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1265AB-70IND reliable?
The price and inventory of DS1265AB-70IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1265AB-70IND is usually 5 days.
3.What payment methods are accepted for DS1265AB-70IND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1265AB-70IND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1265AB-70IND?
DS1265AB-70IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1265AB-70IND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1265AB-70IND?
For technical support, including DS1265AB-70IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1265AB-70IND requirements.
6.How does Aetrix verify that DS1265AB-70IND is sourced from the original manufacturer or authorized distributors?
All DS1265AB-70IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1265AB-70IND meets industry standards.
7.What is the process for return or replacement of DS1265AB-70IND?
All DS1265AB-70IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1265AB-70IND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1265AB-70IND part is unused and in its original packaging.
Return procedure for DS1265AB-70IND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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