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Analog Devices Inc./Maxim Integrated DS1265W-100+
- Part No.:
- DS1265W-100+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 36-DIP Module (0.610", 15.49mm)
- Datasheet:
-
DS1265W-100+.pdf
- Description:
- IC NVSRAM 8MBIT PARALLEL 36EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,849
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Product details
Overview
DS1265W-100+ from Maxim Integrated (now Analog Devices) is a 3.3V, 8Mb nonvolatile SRAM with 1,048,576 × 8 organization, 100ns read/write access time, and integrated lithium battery backup enabling 10-year data retention without external power. It operates across 0°C to +70°C and features automatic write protection during VCC decay below 2.8V, used in industrial control memory logging and embedded system configuration storage.
For engineers reviewing the DS1265W-100+ datasheet, DS1265W-100+ pinout, DS1265W-100+ application, or DS1265W-100+ equivalent, key selection criteria include guaranteed 10-year data retention, 100ns timing compliance, industrial-grade voltage monitoring (VTP = 2.8–3.0V), and self-contained lithium energy source with freshness seal activation on first power-up.
Technical Context
The DS1265W-100+ integrates a CMOS SRAM core with autonomous power-fail detection circuitry that monitors VCC continuously; when voltage drops below ~2.5V, it switches to lithium backup and places all I/Os in high-impedance state while enabling unconditional write protection. Its control logic requires no external support components for microprocessor interfacing.
Read operation initiates when CE and OE are low and WE is high, delivering valid DQ outputs within tACC = 100ns after address stabilization; write operation triggers on the later falling edge of CE or WE, with tWP = 75ns minimum pulse width and tWR = 5/20ns recovery depending on signal edge origin.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 8,388,608-bit (1,048,576 × 8) - supports full byte-wide microprocessor data bus interface |
| Access Time | 100ns - meets timing requirements for 10MHz bus systems with zero wait states |
| Data Retention | 10 years without power - enabled by sealed lithium cell and automatic switchover at ~2.5V |
| Voltage Threshold | VTP = 2.8–3.0V - defines precise write-protection activation point during brownout |
| Supply Voltage | VCC = 3.0–3.6V - compatible with standard 3.3V logic rails and tolerant of ±0.3V variation |
| Operating Temp | 0°C to +70°C - commercial grade suitable for indoor industrial and telecom equipment |
| Standby Current | ICCS2 = 100–150µA at CE = VCC−0.2V - enables ultra-low-power retention mode |
Pinout & Package
DS1265W-100+ uses a 36-pin 740mil Extended Dual In-line Package (EDIP) with through-hole mounting and RoHS-compliant lead finish. The package includes two NC pins (pins 13 and 24) and supports wave or hand soldering only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus accepting full 1M-word range; TTL-compatible input thresholds |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus with 2mA drive strength and 35ns high-Z transition |
| CE | Chip Enable | Active-low chip select; controls device activation and participates in write-cycle timing |
| WE | Write Enable | Active-low write strobe; determines write start/stop edges with CE per tWP and tWR specs |
| OE | Output Enable | Active-low output control; enables DQ drivers during read, must be high during write |
| VCC | Power Supply | +3.3V supply input; monitored for fail-detect; powers RAM and control logic above 3.0V |
| GND | Ground | Reference return path for all signals and internal switching circuits |
| NC | No Connect | Pins 13 and 24 are unconnected internally; must remain floating or grounded per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Self-contained lithium backup | Eliminates need for external battery management circuitry or supercapacitors |
| Freshness seal activation | Lithium source remains electrically disconnected until first VCC > VTP application, preserving full capacity |
| Automatic write protection | Unconditional enable below 2.8V - prevents corruption during power collapse without software intervention |
| Unlimited write cycles | SRAM core allows infinite endurance versus flash or EEPROM wear-out limitations |
| Low-power CMOS design | 100–250µA standby current enables long-term battery-backed operation in off-grid systems |
Applications
| Industrial Data Logger | Medical Device Configuration Store |
|---|---|
Use Scenario: Continuous recording of sensor readings in programmable logic controllers during mains failure. IC Role / Device Role / Timing Role: Nonvolatile memory buffer retaining last 10 minutes of operational history without host CPU involvement. Use Value: Guarantees 10-year data integrity post-power-loss using integrated lithium source and automatic VCC-fail switchover. | Use Scenario: Storing calibration coefficients and user preferences in portable ultrasound units between clinical sessions. IC Role / Device Role / Timing Role: Byte-addressable NV SRAM providing instant read/write access during boot and runtime configuration updates. Use Value: Enables unlimited rewrites of critical settings without endurance degradation, unlike flash-based alternatives. |
| Telecom Base Station Clock Sync | Avionics Flight Recorder Buffer |
Use Scenario: Holding GPS-derived time-of-day and oscillator drift compensation values during brief AC outages. IC Role / Device Role / Timing Role: Low-latency (100ns) memory holding real-time clock metadata with deterministic access timing. Use Value: Maintains synchronization accuracy across power interruptions via seamless lithium backup activation below 2.5V. | Use Scenario: Capturing pre-crash flight parameters in black box recorders where power may be lost abruptly. IC Role / Device Role / Timing Role: Fail-safe memory capturing last 30 seconds of sensor data with hardware-triggered write protection. Use Value: Ensures forensic data integrity via autonomous write-lock on VCC decay, independent of host controller response time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK12C68-AW50 | 5V supply, 50ns access, no built-in lithium - requires external battery and charge control | Suitable for legacy 5V systems but lacks autonomous power-fail response and freshness seal | Select only if existing 5V infrastructure prohibits 3.3V redesign and external battery management is acceptable |
| AS6C8016-100TIN | Standard 8Mb SRAM (no NV), 100ns, 3.3V - zero data retention without external backup | Lower cost for volatile-only use cases; requires separate battery-backed controller or supercapacitor circuit | Choose when nonvolatility is handled externally and BOM cost reduction outweighs integration benefit |
Compared with STK12C68-AW50 and AS6C8016-100TIN, DS1265W-100+ uniquely delivers fully integrated lithium backup, automatic VCC-fail detection, and 10-year retention without external components - reducing board area, qualification effort, and field failure risk in safety-critical memory logging.
Availability
DS1265W-100+ is available at Aetrix Electronics and suitable for industrial data loggers, medical device configuration stores, telecom base station clock sync modules, and avionics flight recorder buffers requiring stable component supply and long-term lifecycle support.
Supply support for DS1265W-100+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices (via acquisition of Maxim Integrated) designs precision analog, mixed-signal, and nonvolatile memory solutions for high-reliability industrial, automotive, and communications systems.
The DS1265W-100+ belongs to Maxim's legacy nonvolatile SRAM product line, engineered specifically for applications demanding autonomous data retention during unpredictable power loss without firmware or external supervision.
FAQ
What is the guaranteed data retention period for DS1265W-100+ under zero-power conditions?
The DS1265W-100+ guarantees 10 years of data retention in the absence of external power, measured cumulatively from the moment VCC is first applied and the lithium energy source is activated. This specification assumes proper handling, storage within -40°C to +85°C, and operation within recommended DC conditions. The internal power-switching circuit ensures seamless transition to battery backup when VCC falls below ~2.5V.
Does DS1265W-100+ require external circuitry to manage its lithium backup source?
No, DS1265W-100+ does not require external circuitry for lithium backup management. It contains fully integrated control logic that autonomously monitors VCC, disconnects the lithium cell until first power-up (freshness seal), and switches to battery power during supply decay. All voltage thresholds-including VTP = 2.8–3.0V and switchover at ~2.5V-are implemented on-die.
What are the timing constraints for write operations on DS1265W-100+?
DS1265W-100+ requires a minimum write pulse width (tWP) of 75ns, measured from the later falling edge of CE or WE to the earlier rising edge. Write recovery times are tWR1 = 5ns (from WE high) and tWR2 = 20ns (from CE high). Address must remain stable throughout the cycle, and OE must be held high during writes to prevent bus contention.
Can DS1265W-100+ operate in industrial temperature range (-40°C to +85°C)?
No, DS1265W-100+ is specified for 0°C to +70°C (commercial grade). For industrial temperature operation, the pin-compatible DS1265W-100IND+ variant must be used - it shares identical electrical specifications and timing but is qualified across -40°C to +85°C with the same 36-pin EDIP package.
How does DS1265W-100+ handle power-up and power-down transitions?
During power-down, DS1265W-100+ detects VCC decay via internal comparators and activates write protection within 1.5µs (tPD). At ~2.5V, it connects the lithium source and places all I/Os in high-impedance. During power-up, it disconnects lithium and resumes normal operation once VCC exceeds 3.0V, with full functionality restored after tREC = 125ms for write-protection release.
DS1265W-100+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 36-DIP Module (0.610", 15.49mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 36-EDIP
DS1265W-100+ FAQ
1.How can I place an order for DS1265W-100+ through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1265W-100+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1265W-100+ reliable?
The price and inventory of DS1265W-100+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1265W-100+ is usually 5 days.
3.What payment methods are accepted for DS1265W-100+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1265W-100+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1265W-100+?
DS1265W-100+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1265W-100+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1265W-100+?
For technical support, including DS1265W-100+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1265W-100+ requirements.
6.How does Aetrix verify that DS1265W-100+ is sourced from the original manufacturer or authorized distributors?
All DS1265W-100+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1265W-100+ meets industry standards.
7.What is the process for return or replacement of DS1265W-100+?
All DS1265W-100+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1265W-100+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1265W-100+ part is unused and in its original packaging.
Return procedure for DS1265W-100+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1265W-100+ Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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