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Analog Devices Inc./Maxim Integrated DS1265W-100IND

Part No.:
DS1265W-100IND
Manufacturer:
Analog Devices Inc./Maxim Integrated
Category:
Memory
Package:
36-DIP Module (0.610", 15.49mm)
Datasheet:
AetrixDS1265W-100IND.pdf
Description:
IC NVSRAM 8MBIT PARALLEL 36EDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,365

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Product details

Overview

DS1265W-100IND from Maxim Integrated (now Analog Devices) is an 8Mb nonvolatile SRAM with lithium-backed data retention, organized as 1,048,576 × 8 bits, operating at 3.3V with 100ns read/write access time and industrial temperature range (–40°C to +85°C). It provides automatic write protection during power loss and guarantees ≥10 years data retention without external power.

For engineers reviewing the DS1265W-100IND datasheet, DS1265W-100IND pinout, DS1265W-100IND application, or DS1265W-100IND equivalent, key selection considerations include its self-contained lithium backup, zero-write-cycle limit, 3.3V CMOS interface timing, industrial-grade VCC monitoring threshold (2.8V), and 36-pin 740mil EDIP package compatibility with standard microprocessor buses.

Technical Context

The DS1265W-100IND integrates a lithium battery, voltage monitor, and power-switching circuit in a monolithic 36-pin EDIP package. Its VCC supervision logic triggers automatic write protection when supply drops below 2.8V and switches to battery backup below ~2.5V - no external components required.

It supports standard asynchronous SRAM protocols: CE/OE/WE control enables read cycles (CE&OE low, WE high) and write cycles (CE&WE low), with tACC = tRC = tWC = 100ns, tOE = 50ns, and tCO = 100ns at VCC = 3.3V ±0.3V across –40°C to +85°C.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size8,388,608-bit (1,048,576 × 8) nonvolatile SRAM
Supply Voltage3.3V ±0.3V - operates fully functional above 3.0V, write-protects at ≤2.8V
Access Time100ns - defines minimum cycle time for reliable read/write under worst-case industrial temp
Data Retention≥10 years without power - enabled by internal lithium cell and automatic power-switching
Write CyclesUnlimited - no endurance degradation due to battery-backed architecture
Operating Temp–40°C to +85°C - qualified for industrial environments without derating
Standby Current100–250µA - ultra-low ICCS2 enables long-term battery-backed standby

Pinout & Package

DS1265W-100IND uses a 36-pin 740mil Extended Dual In-line Package (EDIP) with through-hole mounting and RoHS-compliant lead finish.

Pin/TerminalCircuit RoleDesign Meaning
A0–A19Address Inputs20-bit address bus supporting full 1M-word addressing; TTL/CMOS compatible
DQ0–DQ7Data I/O8-bit bidirectional data bus; high-impedance when CE/OE inactive or during write
CEChip EnableActive-low chip select; initiates read/write when low with OE/WE appropriately asserted
WEWrite EnableActive-low write strobe; controls data latching and output disable during writes
OEOutput EnableActive-low output enable; disables outputs when high to prevent bus contention
VCCPower Supply+3.3V primary supply; powers logic and enables lithium disconnect until first power-up
GNDGroundReference return path for all signals and internal switching circuitry
NCNo ConnectPins 13, 24, 35 - physically present but internally unconnected; must remain floating

Key Features

FeatureDesign Value
Automatic Power-Fail ProtectionMonitors VCC continuously; asserts unconditional write protection and high-Z outputs when VCC < 2.8V
Freshness SealLithium source electrically disconnected until first VCC application > VTP (2.8V), preserving full 10-year capacity
Zero External Support CircuitryIntegrated battery switch, voltage detector, and backup controller eliminate need for external capacitors, diodes, or supervisors
Asynchronous Bus InterfaceStandard CE/OE/WE timing compatible with legacy 8051, Z80, and 68K microprocessor buses without glue logic
Industrial Temperature QualificationFull DC/AC specs guaranteed over –40°C to +85°C, including tACC = 100ns and ICCS2 ≤ 150µA

Applications

Industrial Data LoggerMedical Device Memory

Use Scenario: Standalone environmental sensor node logging timestamped readings every 5 seconds, powered intermittently via solar charger.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing last 10,000 records; retains data during multi-day power outages between charge cycles.

Use Value: Eliminates need for EEPROM wear-leveling or flash programming delays; enables instant resume after power restoration with no data loss.

Use Scenario: Portable ECG monitor capturing real-time waveform buffers before wireless transmission to base station.

IC Role / Device Role / Timing Role: High-speed buffer memory holding up to 32 seconds of raw 1ksps analog samples; preserves critical diagnostic data during sudden battery swap.

Use Value: Guarantees zero data corruption during hot-swap events via sub-2µs VCC-fail detection and immediate write protect activation.

Avionics Black Box RecorderRailway Signaling Controller

Use Scenario: Crash-protected flight data recorder capturing engine parameters, attitude, and control inputs at 100Hz.

IC Role / Device Role / Timing Role: Primary nonvolatile storage for last 25 hours of telemetry; survives extreme thermal shock and vibration.

Use Value: Meets DO-160 Section 22 Category S requirements via –40°C to +85°C operation and 10-year retention without refresh.

Use Scenario: Wayside interlocking system logging signal state transitions and fault events for SIL-4 safety certification.

IC Role / Device Role / Timing Role: Tamper-proof event log memory with deterministic 100ns write latency and fail-safe power-down behavior.

Use Value: Enables EN 50129-compliant audit trail generation with guaranteed integrity even during grid brownouts or lightning-induced surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STK12C68-AW50I5V-only supply; 50ns access; 64K × 8 organization; no integrated lithium (requires external battery)Limited to 5V systems; requires external supervisor and backup diode networkChoose only if legacy 5V design mandates pin-compatible upgrade with minimal layout change
ISL71091SEHRadiation-hardened QML-V; 16Mb density; 150ns access; MIL-PRF-38535 Class V qualifiedTargeted for space-grade applications; higher cost and longer lead times; not industrial-temperature optimizedSelect when radiation tolerance, extended reliability testing, or space qualification outweighs cost and speed trade-offs

Compared with STK12C68-AW50I and ISL71091SEH, DS1265W-100IND uniquely delivers 3.3V operation, 100ns timing, and fully integrated lithium backup in a commercial-industrial dual-qualified package - making it optimal for cost-sensitive, high-reliability terrestrial embedded systems requiring zero external support components.

Availability

DS1265W-100IND is available at Aetrix Electronics and suitable for industrial data loggers, medical device buffers, avionics recorders, and railway signaling controllers requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.

Supply support for DS1265W-100IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices (via acquisition of Maxim Integrated) designs precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications markets.

The DS1265W-100IND belongs to Maxim's legacy nonvolatile SRAM product line, engineered specifically for mission-critical data retention in systems where power interruption is frequent or unpredictable.

FAQ

What is the guaranteed data retention period for DS1265W-100IND without external power?

The DS1265W-100IND guarantees ≥10 years of data retention in the absence of external power, measured cumulatively from the time VCC is first applied and the internal lithium energy source is activated. This specification is validated under industrial temperature conditions (–40°C to +85°C) and accounts for self-discharge characteristics of the integrated lithium cell.

Does DS1265W-100IND require external circuitry for battery backup operation?

No, DS1265W-100IND requires no external circuitry for battery backup operation. It integrates a lithium energy source, voltage monitor, and power-switching circuit. The lithium cell remains electrically disconnected until first VCC application exceeds 2.8V, ensuring full capacity retention at shipment.

What happens to DS1265W-100IND outputs during power failure?

During power failure, DS1265W-100IND automatically places all outputs in high-impedance state within 1.5µs of VCC falling below the detection threshold. Simultaneously, write protection is unconditionally enabled, address/data inputs become "don't care," and the lithium source powers the SRAM core to preserve data.

Can DS1265W-100IND be used in a 5V system?

No, DS1265W-100IND is strictly a 3.3V device with absolute maximum VCC of +4.6V. Operation at 5V violates Absolute Maximum Ratings and risks permanent damage. For 5V systems, consider legacy alternatives like STK12C68-AW50I - but note they lack integrated lithium and require external support components.

Is DS1265W-100IND pin-compatible with other DS1265W speed grades?

Yes, DS1265W-100IND shares identical 36-pin EDIP pinout and signal assignments with DS1265W-100+ (commercial grade) and DS1265W-120IND+, differing only in AC timing specifications and temperature qualification. All variants use the same footprint, address/data/control mapping, and power sequencing behavior.

DS1265W-100IND Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc./Maxim Integrated
Series:
-
Package/Case:
36-DIP Module (0.610", 15.49mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
8Mbit
Memory Organization:
1M x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
100ns
Access Time:
100 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
36-EDIP

DS1265W-100IND FAQ

1.How can I place an order for DS1265W-100IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1265W-100IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1265W-100IND reliable?

The price and inventory of DS1265W-100IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1265W-100IND is usually 5 days.

3.What payment methods are accepted for DS1265W-100IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1265W-100IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1265W-100IND?

DS1265W-100IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1265W-100IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1265W-100IND?

For technical support, including DS1265W-100IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1265W-100IND requirements.

6.How does Aetrix verify that DS1265W-100IND is sourced from the original manufacturer or authorized distributors?

All DS1265W-100IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1265W-100IND meets industry standards.

7.What is the process for return or replacement of DS1265W-100IND?

All DS1265W-100IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1265W-100IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1265W-100IND part is unused and in its original packaging.

Return procedure for DS1265W-100IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DS1265W-100IND Tags

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