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Analog Devices Inc./Maxim Integrated DS1265W-100IND+
- Part No.:
- DS1265W-100IND+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 36-DIP Module (0.610", 15.49mm)
- Datasheet:
-
DS1265W-100IND+.pdf
- Description:
- IC NVSRAM 8MBIT PARALLEL 36EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:1,000
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Product details
Overview
DS1265W-100IND+ from Maxim Integrated (now Analog Devices) is an 8Mb nonvolatile SRAM with lithium-backed data retention, organized as 1,048,576 × 8 bits, operating at 3.3V, featuring 100ns read/write access time and industrial temperature range (-40°C to +85°C). It autonomously switches to battery backup when VCC drops below ~2.5V and guarantees ≥10 years data retention without external power.
For engineers reviewing the DS1265W-100IND+ datasheet, DS1265W-100IND+ pinout, DS1265W-100IND+ application, or DS1265W-100IND+ equivalent, key selection criteria include write-protection voltage (2.8–3.0V), standby current (100–250µA), tRC/tWC = 100ns timing, and EDIP-36 package compatibility in mission-critical industrial memory systems.
Technical Context
The DS1265W-100IND+ integrates a self-contained lithium energy source and voltage-monitoring circuitry that triggers unconditional write protection when VCC falls below 2.8V and activates battery backup below ~2.5V. Its CMOS architecture supports unlimited write cycles and requires no external support circuitry for microprocessor interfacing.
It operates in three distinct modes: standard read/write (VCC > 3.0V), automatic write-protect (2.5V < VCC < 3.0V), and battery-retention mode (VCC < 2.5V). All inputs become "don't care" and outputs go high-impedance during power-down transitions, ensuring data integrity without host intervention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 8,388,608-bit (1,048,576 × 8) - supports full byte-wide addressing for legacy 8-bit bus systems |
| Access Time | 100ns - enables direct interface with 10MHz microcontrollers without wait states |
| Supply Voltage | 3.0V to 3.6V - compatible with standard 3.3V logic rails and tolerant of ±0.3V variation |
| Write Protection Threshold | 2.8V to 3.0V - ensures early lockout before critical logic levels degrade |
| Data Retention | ≥10 years without power - guaranteed from first power-on, enabled by freshness-sealed lithium cell |
| Operating Temperature | -40°C to +85°C - qualified for industrial control, railway, and outdoor embedded applications |
| Standby Current | 100–250µA - minimizes system-level power draw during extended sleep or brownout conditions |
Pinout & Package
DS1265W-100IND+ uses a 36-pin Extended Dual In-line Package (EDIP), 740mil width, with through-hole mounting and wave/hand-solderable leads per UL E99151 recognition.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word decoding; all must remain stable during write cycles |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; high-impedance during write if OE = VIH, disabled on power loss |
| CE | Chip Enable | Active-low chip select; falling edge initiates read/write; rising edge terminates cycle with tWR recovery |
| WE | Write Enable | Active-low write strobe; controls data latching; output drivers disabled when WE low and OE active |
| OE | Output Enable | Active-low output control; determines tOE (50ns) or tCO (100ns) access timing path |
| VCC | Power Supply | +3.3V supply input; monitored continuously; triggers battery switchover at ~2.5V |
| GND | Ground | Reference return path for all signals and internal lithium circuitry |
| NC | No Connect | Three pins (13, 23, 24) are unconnected - must be left floating, not tied |
Key Features
| Feature | Design Value |
|---|---|
| Lithium freshness seal | Lithium cell electrically disconnected until first VCC application > VTP, preserving full 10-year capacity |
| Automatic VCC monitoring | Dedicated analog comparator detects VCC decay and initiates write-protect within 1.5µs (tPD) |
| Unlimited write endurance | No wear-out mechanism - supports continuous logging or firmware update buffers without degradation |
| Zero-support-circuitry interface | Direct connection to 8-bit microprocessor buses; no external capacitors, regulators, or supervisors required |
| High-impedance fail-safe outputs | All DQ lines go Hi-Z during power transition, preventing bus contention or back-driving |
Applications
| Industrial PLC Data Logging | Railway Signaling Event Recorder |
|---|---|
Use Scenario: Continuous timestamped sensor and status data capture during mains power interruption. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer storing up to 1MB of operational history with autonomous battery switchover. Use Value: Guarantees zero-data-loss recording across unpredictable brownouts, validated for -40°C to +85°C operation. | Use Scenario: Storing critical fault codes and train position events in wayside signaling controllers. IC Role / Device Role / Timing Role: Fail-safe memory holding last-known safe state and diagnostic logs during power failure. Use Value: Meets EN 5012x requirements via 10-year retention and UL E99151 recognition without external backup. |
| Medical Infusion Pump Memory | Energy Meter Firmware Storage |
Use Scenario: Retaining dosage history, calibration offsets, and alarm logs during battery-only operation. IC Role / Device Role / Timing Role: Primary nonvolatile storage for audit-trail data with deterministic 100ns access for real-time updates. Use Value: Eliminates EEPROM wear-out concerns and satisfies IEC 62304 Class C data integrity requirements. | Use Scenario: Storing tariff tables, consumption counters, and firmware patches in smart electricity meters. IC Role / Device Role / Timing Role: High-reliability memory for field-upgradable parameters requiring >10-year archival stability. Use Value: Avoids supercapacitor aging issues and provides guaranteed retention under wide-temperature grid deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK12C68-AI50 | 5V supply only; 50ns access; 64K × 8 organization; no integrated lithium (requires external battery) | Limited to legacy 5V systems; lacks autonomous voltage monitoring and seamless switchover | Select only for cost-sensitive 5V designs where external battery management is already implemented |
| AS6C8008-100TIN | Standard 8Mb SRAM (no NV); 3.3V; 100ns; same EDIP-36 footprint but no battery or protection circuitry | Requires external NV controller or backup power solution; no built-in data retention | Choose when full SRAM speed is needed and external NV infrastructure (e.g., FRAM + supervisor) is preferred |
Compared with STK12C68-AI50 and AS6C8008-100TIN, DS1265W-100IND+ uniquely delivers integrated lithium backup, autonomous VCC monitoring, and guaranteed 10-year retention in a single 3.3V, industrial-grade package-eliminating design complexity and validation overhead for safety-critical memory retention.
Availability
DS1265W-100IND+ is available at Aetrix Electronics and suitable for industrial PLC data logging, railway event recording, and medical infusion pump memory systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant through-hole packaging.
Supply support for DS1265W-100IND+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices (via acquisition of Maxim Integrated) designs high-reliability analog, mixed-signal, and nonvolatile memory solutions for harsh-environment applications.
The DS1265W product line delivers self-contained, lithium-backed SRAMs engineered for zero-maintenance data retention in industrial, transportation, and medical systems where power continuity cannot be guaranteed.
FAQ
What is the minimum VCC level required for normal operation of DS1265W-100IND+?
DS1265W-100IND+ requires VCC ≥ 3.0V for full functional operation including read and write cycles. Below 3.0V, it enters write-protected mode; below ~2.5V, the internal lithium source powers the SRAM to retain data. The device remains fully operational down to 3.0V and does not require derating at the lower end of its 3.0–3.6V supply range.
Does DS1265W-100IND+ require external circuitry to manage battery backup?
No, DS1265W-100IND+ contains fully integrated lithium energy source, voltage monitoring, and power-switching circuitry. No external capacitors, supervisors, or battery management ICs are needed. The lithium cell is factory-freshness sealed and automatically engages upon first power application above VTP (2.8–3.0V), making DS1265W-100IND+ a true single-component NV SRAM solution.
How does DS1265W-100IND+ behave during power-up and power-down transitions?
During power-down, DS1265W-100IND+ detects VCC decay within 1.5µs (tPD), disables writes, and switches to lithium power at ~2.5V. During power-up, it reconnects VCC and disconnects lithium once VCC exceeds ~2.5V, then resumes full operation after VCC > 3.0V. All DQ lines go high-impedance during transitions to prevent bus conflicts - behavior confirmed in DS1265W-100IND+ timing diagrams and power-cycle test reports.
Is DS1265W-100IND+ pin-compatible with other 36-pin EDIP SRAMs?
DS1265W-100IND+ uses a standard 36-pin EDIP footprint (740mil width) with industry-typical signal assignments (A0–A19, DQ0–DQ7, CE/WE/OE/VCC/GND), but its integrated lithium and protection logic make it functionally distinct. While physical mounting matches many EDIP-36 memories, electrical behavior-including automatic write-protect and battery switchover-is unique to DS1265W-100IND+ and not replicated in generic SRAMs.
What is the expected data retention lifetime for DS1265W-100IND+?
DS1265W-100IND+ guarantees ≥10 years of data retention in the absence of external power, measured from the time VCC is first applied (activating the lithium cell). This specification is validated under worst-case conditions and applies across the full -40°C to +85°C industrial temperature range. Retention time is unaffected by write cycle count due to unlimited endurance.
DS1265W-100IND+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 36-DIP Module (0.610", 15.49mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 36-EDIP
DS1265W-100IND+ FAQ
1.How can I place an order for DS1265W-100IND+ through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1265W-100IND+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1265W-100IND+ reliable?
The price and inventory of DS1265W-100IND+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1265W-100IND+ is usually 5 days.
3.What payment methods are accepted for DS1265W-100IND+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1265W-100IND+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1265W-100IND+?
DS1265W-100IND+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1265W-100IND+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1265W-100IND+?
For technical support, including DS1265W-100IND+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1265W-100IND+ requirements.
6.How does Aetrix verify that DS1265W-100IND+ is sourced from the original manufacturer or authorized distributors?
All DS1265W-100IND+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1265W-100IND+ meets industry standards.
7.What is the process for return or replacement of DS1265W-100IND+?
All DS1265W-100IND+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1265W-100IND+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1265W-100IND+ part is unused and in its original packaging.
Return procedure for DS1265W-100IND+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1265W-100IND+ Tags
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