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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1270AB-100#

Name: DS1270AB-100#
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1270AB-100#
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1270AB-100#

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 36-DIP Module (0.610", 15.49mm)

Datasheet:: DS1270AB-100#.pdf

Description:: IC NVSRAM 16MBIT PARALLEL 36EDIP

Quantity:: RFQ Add To RFQ list

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Inventory:1,103

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Product details

Overview

DS1270AB-100# from Maxim Integrated is a 16 Mbit (2,097,152 × 8) nonvolatile static RAM with integrated lithium battery backup, ±5% V_CC tolerance (4.75–5.25 V), 70 ns access time, and industrial-grade data retention of ≥5 years without external power. It operates as a drop-in SRAM replacement in microprocessor systems requiring persistent memory during power loss, such as industrial PLCs and embedded data loggers.

For engineers reviewing the DS1270AB-100# datasheet, DS1270AB-100# pinout, DS1270AB-100# application, or DS1270AB-100# equivalent, key selection criteria include write-protection voltage threshold (4.50–4.75 V), CE/OE/WE control interface timing, 36-pin 740-mil EDIP package compatibility, and guaranteed data retention under unpowered storage conditions.

Technical Context

The DS1270AB-100# integrates a self-contained lithium energy source and voltage-monitoring circuitry that automatically enables battery backup when V_CC falls below 4.5 V and disables it upon power restoration above ~3.0 V. Its CMOS architecture supports unlimited write cycles and full static operation with no refresh required.

It implements standard asynchronous parallel SRAM timing with independent CE/OE/WE controls, t_ACC = 70 ns, t_RC = 70 ns, and t_WP = 55 ns. The device enters high-impedance output state during power-down and asserts unconditional write protection before V_CC drops to 3.0 V.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	16,777,216-bit (2,097,152 × 8) - provides byte-addressable nonvolatile storage without external controller or EEPROM emulation overhead
Access Time	70 ns - ensures compatibility with 14 MHz bus systems and legacy microcontrollers requiring fast static RAM timing
V_CC Range	4.75 V to 5.25 V (±5%) - supports stable operation across regulated 5 V rails with typical supply tolerance in industrial power supplies
Write Protection Threshold	4.50–4.75 V - triggers automatic battery switchover and input disable before logic-level corruption occurs
Data Retention	≥5 years without power - enabled by sealed lithium cell disconnected until first V_CC application, preserving full capacity
Operating Temperature	0°C to +70°C (commercial) - validated for use in office automation, test equipment, and non-extended-temperature embedded systems
Standby Current	100–250 µA at CE = V_CC–0.5 V - enables low-power hold mode during system sleep without external power gating

Pinout & Package

DS1270AB-100# uses a 36-pin 740-mil Extended Dual In-line Package (EDIP) with through-hole mounting and wave-solder compatible lead finish.

Pin/Terminal	Circuit Role	Design Meaning
A0–A20	Address Inputs	21-bit address bus supporting full 2-Mbyte addressing; all inputs ignored during power-fail write protection
DQ0–DQ7	Data I/O	8-bit bidirectional data bus; high-impedance during power-down and write cycles unless OE/CE active
CE	Chip Enable	Active-low chip select; must be low for read/write; forces high-Z outputs and disables internal logic when inactive during power loss
WE	Write Enable	Active-low write strobe; controls data latching; output drivers disabled when WE low and OE/CE active to prevent bus contention
OE	Output Enable	Active-low output enable; used only during reads; must be high during writes to avoid contention
V_CC	Power Supply	+5 V supply input; monitored continuously; falling below 4.5 V initiates automatic battery backup and write protect
GND	Ground	Reference return path for all signals and internal battery circuitry; separate ground plane recommended for noise immunity
NC	No Connect	Pins 13 and 24 are unconnected; must remain floating-no routing or grounding permitted

Key Features

Feature	Design Value
Lithium freshness seal	Lithium cell electrically disconnected until first V_CC > V_TP; guarantees full 5-year retention capacity at shipment
Automatic power-fail response	Voltage monitor triggers battery switchover within 1.5 µs of V_CC decay past V_TP, disabling all inputs and enabling write protection
Unlimited write endurance	No wear-out mechanism-supports continuous logging or configuration updates without cycle-count limits or firmware wear leveling
Zero-refresh static operation	Eliminates external refresh circuitry or DRAM controller; reduces BOM count and simplifies PCB layout for legacy designs
Full ±5% V_CC tolerance	Operates across 4.75–5.25 V without regulation or brown-out detection circuitry-reduces need for auxiliary supervisor ICs

Applications

Industrial Data Logger	Medical Device Configuration Store
Use Scenario: Continuous acquisition of sensor readings in factory-floor monitoring systems with intermittent mains power. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing timestamped measurement buffers and calibration tables during AC outages. Use Value: Preserves up to 2 MB of raw sensor history without flash wear or write latency; survives >5 years of unpowered storage between maintenance cycles.	Use Scenario: Storing patient-specific therapy parameters and device calibration constants in portable infusion pumps. IC Role / Device Role / Timing Role: Battery-backed memory holding critical setup data across battery swaps and shutdowns. Use Value: Eliminates reconfiguration after power loss; meets IEC 62304 Class C software safety requirements via deterministic, zero-cycle-loss data retention.
Network Router Boot Configuration	Test Equipment Calibration Memory
Use Scenario: Holding startup configuration, MAC addresses, and firmware patch flags in enterprise edge routers. IC Role / Device Role / Timing Role: Parallel SRAM interfaced directly to MIPS or ARM bus for fast boot-time parameter fetch. Use Value: Enables sub-second boot recovery after unexpected power interruption; avoids slow SPI flash read delays during initialization.	Use Scenario: Storing multi-point calibration coefficients and linearity correction maps in benchtop oscilloscopes and signal generators. IC Role / Device Role / Timing Role: High-reliability memory retaining precision calibration data across instrument shipping, storage, and field service. Use Value: Maintains traceable metrology integrity without recalibration after 5+ years of shelf storage or transport-induced power loss.

Industrial Data Logger

Medical Device Configuration Store

Use Scenario: Continuous acquisition of sensor readings in factory-floor monitoring systems with intermittent mains power.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing timestamped measurement buffers and calibration tables during AC outages.

Use Value: Preserves up to 2 MB of raw sensor history without flash wear or write latency; survives >5 years of unpowered storage between maintenance cycles.

Use Scenario: Storing patient-specific therapy parameters and device calibration constants in portable infusion pumps.

IC Role / Device Role / Timing Role: Battery-backed memory holding critical setup data across battery swaps and shutdowns.

Use Value: Eliminates reconfiguration after power loss; meets IEC 62304 Class C software safety requirements via deterministic, zero-cycle-loss data retention.

Network Router Boot Configuration

Test Equipment Calibration Memory

Use Scenario: Holding startup configuration, MAC addresses, and firmware patch flags in enterprise edge routers.

IC Role / Device Role / Timing Role: Parallel SRAM interfaced directly to MIPS or ARM bus for fast boot-time parameter fetch.

Use Value: Enables sub-second boot recovery after unexpected power interruption; avoids slow SPI flash read delays during initialization.

Use Scenario: Storing multi-point calibration coefficients and linearity correction maps in benchtop oscilloscopes and signal generators.

IC Role / Device Role / Timing Role: High-reliability memory retaining precision calibration data across instrument shipping, storage, and field service.

Use Value: Maintains traceable metrology integrity without recalibration after 5+ years of shelf storage or transport-induced power loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1270Y-70#	Wider V_CC range (4.5–5.5 V, ±10%), lower write-protection threshold (4.25–4.5 V); identical pinout and timing	Better suited for systems with less-regulated 5 V supplies or wider ambient temperature swings	Select DS1270Y-70# if board-level V_CC variation exceeds ±5% or if operating near 4.5 V minimum
STK15C88-70I	Same density and 70 ns speed but uses capacitor-based backup; 10-year retention spec; different pinout (32-pin SOJ)	Requires external supercapacitor charging circuit and occupies more PCB area	Choose STK15C88-70I only if long-term cost reduction outweighs added design complexity and layout impact

Compared with DS1270Y-70# and STK15C88-70I, DS1270AB-100# delivers tighter V_CC tolerance and integrated lithium backup in a proven EDIP package-ideal for commercial-temperature applications where supply regulation is stable and board space is constrained.

Availability

DS1270AB-100# is available at Aetrix Electronics and suitable for industrial data loggers, medical device configuration stores, and network router boot configuration requiring stable component supply, long-life data retention, and drop-in SRAM compatibility.

Supply support for DS1270AB-100# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in high-performance analog, mixed-signal, and power management ICs for industrial, communications, and computing markets.

The DS1270AB-100# belongs to Maxim's nonvolatile SRAM product line, engineered to replace battery-backed DRAM and EEPROM in systems demanding instant-write, unlimited endurance, and guaranteed 5-year data retention without external support components.

FAQ

What is the guaranteed data retention period for DS1270AB-100# when powered off?

The DS1270AB-100# guarantees ≥5 years of data retention in the absence of external power, measured from the time V_CC is first applied. This is ensured by a sealed lithium cell disconnected until initial power-up, preserving full energy capacity per Maxim's component selection and process control.

Does DS1270AB-100# require external circuitry for battery backup operation?

No, DS1270AB-100# requires no external circuitry for battery backup. Its integrated lithium energy source and voltage-monitoring control circuitry automatically switch to backup power when V_CC falls below 4.5 V and disconnect the battery during normal operation to preserve longevity.

Is DS1270AB-100# pin-compatible with other members of the DS1270 family?

Yes, DS1270AB-100# shares identical 36-pin 740-mil EDIP pinout and timing with DS1270Y-70#, DS1270AB-70IND#, and DS1270Y-70IND#. Only V_CC tolerance and temperature grade differ-no PCB changes are needed when substituting within the same speed grade.

What happens to DS1270AB-100# outputs during power failure?

During V_CC decay, DS1270AB-100# disables all outputs and places them in high-impedance state within 1.5 µs of detecting out-of-tolerance voltage. Address and data lines become don't-care, preventing bus contention or undefined states on the microprocessor data bus.

Can DS1270AB-100# be used in systems with 3.3 V logic interfaces?

No, DS1270AB-100# is strictly a 5 V device with V_CC = 4.75–5.25 V and TTL-compatible input thresholds (V_IL ≤ 0.8 V, V_IH ≥ 2.2 V). Direct connection to 3.3 V logic requires level-shifting circuitry to avoid violating input voltage specifications.

DS1270AB-100# Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 36-DIP Module (0.610", 15.49mm)

Packaging:: Tube

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 16Mbit

Memory Organization:: 2M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 100ns

Access Time:: 100 ns

Voltage - Supply:: 4.75V ~ 5.25V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 36-EDIP

DS1270AB-100# FAQ

1.How can I place an order for DS1270AB-100# through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1270AB-100# on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1270AB-100# reliable?

The price and inventory of DS1270AB-100# are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1270AB-100# is usually 5 days.

3.What payment methods are accepted for DS1270AB-100#?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1270AB-100# transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1270AB-100#?

DS1270AB-100# orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1270AB-100# order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1270AB-100#?

For technical support, including DS1270AB-100# datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1270AB-100# requirements.

6.How does Aetrix verify that DS1270AB-100# is sourced from the original manufacturer or authorized distributors?

All DS1270AB-100# products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1270AB-100# meets industry standards.

7.What is the process for return or replacement of DS1270AB-100#?

All DS1270AB-100# units undergo pre-shipment inspection (PSI). If there is an issue with DS1270AB-100#, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1270AB-100# part is unused and in its original packaging.

Return procedure for DS1270AB-100#:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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