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Analog Devices Inc./Maxim Integrated DS1270AB-70
- Part No.:
- DS1270AB-70
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 36-DIP Module (0.610", 15.49mm)
- Datasheet:
-
DS1270AB-70.pdf
- Description:
- IC NVSRAM 16MBIT PARALLEL 36EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,349
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Product details
Overview
DS1270AB-70 from Maxim Integrated is a 16 Mbit (2,097,152 × 8) nonvolatile static RAM with integrated lithium battery backup, 70 ns access time, ±5% VCC tolerance (4.75–5.25 V), and industrial temperature rating (-40°C to +85°C). It autonomously switches to battery power below ~3.0 V and enables unconditional write protection during power loss, used in mission-critical data logging and configuration storage.
For engineers reviewing the DS1270AB-70 datasheet, DS1270AB-70 pinout, DS1270AB-70 application, or DS1270AB-70 equivalent, key selection criteria include guaranteed 5-year data retention without external power, unlimited write cycles, automatic VCC monitoring, and compatibility with standard SRAM microprocessor interfaces requiring 36-pin EDIP packaging.
Technical Context
The DS1270AB-70 implements a self-contained power-fail detection circuit that triggers at VTP = 4.50–4.75 V, disconnecting VCC and enabling lithium backup within 1.5 µs. Its CMOS architecture supports full SRAM read/write timing compliance with tACC = 70 ns, tRC = 70 ns, and tWC = 70 ns under 5V ±5% operation.
It uses 21 address lines (A0–A20) and 8 bidirectional data lines (DQ0–DQ7) with three control signals (CE, WE, OE) for asynchronous parallel interface operation. All inputs become don't-care and outputs go high-impedance during power-down, eliminating bus contention without external logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,777,216-bit (2,097,152 × 8) - supports full byte-wide microprocessor data bus interfacing |
| Access Time | 70 ns - meets timing requirements for 14 MHz bus operation without wait states |
| VCC Range | 4.75 V to 5.25 V (±5%) - ensures stable operation across industrial-grade 5V supply rails |
| Data Retention | 5 years minimum without external power - enabled by sealed lithium cell and automatic power-switching circuit |
| Write Protection Threshold | VTP = 4.50–4.75 V - initiates unconditional write lock before VCC drops to unsafe levels |
| Operating Temperature | -40°C to +85°C (IND grade) - qualified for embedded industrial control and telecom infrastructure |
| Package | 36-pin 740-mil Extended DIP (EDIP) - through-hole mounting compatible with legacy PCB layouts |
Pinout & Package
DS1270AB-70 is housed in a 36-pin 740-mil Extended Dual In-line Package (EDIP), designed for wave or hand soldering only. The package includes two NC pins (pins 13 and 24) and supports standard SRAM bus interfacing with no external support circuitry required.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting full 2-Mbyte memory map; all must remain stable during read/write cycles |
| DQ0–DQ7 | Bidirectional Data I/O | 8-bit parallel data path; high-impedance when CE or OE inactive to prevent bus contention |
| CE | Chip Enable | Active-low chip select; falling edge initiates access; rising edge terminates cycle or forces high-Z output |
| WE | Write Enable | Active-low write strobe; falling edge starts write; rising edge ends write; disables outputs if OE active |
| OE | Output Enable | Active-low output enable; controls data bus drivers independently of CE/WE during reads |
| VCC | Power Supply | +5V ±5% main supply; powers logic and RAM core; monitored continuously for fail detection |
| GND | Ground Reference | Signal and power return; must be low-impedance to ensure noise immunity during fast transitions |
| NC | No Connect | Pins 13 and 24 are unconnected internally; must remain floating or tied to GND per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Response | Switches to lithium backup within 1.5 µs when VCC falls below VTP, ensuring zero-cycle data corruption |
| Freshness Seal | Lithium source electrically disconnected until first VCC application > VTP, preserving full 5-year retention capacity |
| Unlimited Write Cycles | No endurance limit on SRAM writes - eliminates wear-leveling firmware overhead in logging applications |
| Full VCC Monitoring | Continuous voltage supervision with internal comparator; no external reset IC or supervisor required |
| Low-Power Standby | ICCS2 = 100–250 µA at CE = VCC–0.5 V - enables energy-efficient hold mode in battery-backed systems |
Applications
| Industrial PLC Configuration Storage | Medical Device Calibration Data Retention |
|---|---|
Use Scenario: Storing firmware configuration, I/O mapping, and alarm thresholds in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-access, byte-addressable storage that survives AC mains failure or scheduled shutdowns. Use Value: Eliminates need for EEPROM write delays or flash erase cycles; retains data for ≥5 years without maintenance or refresh. | Use Scenario: Holding calibrated sensor offsets, patient-specific therapy parameters, and audit logs in portable diagnostic equipment. IC Role / Device Role / Timing Role: Battery-backed memory maintaining critical settings during battery swaps or low-power sleep modes. Use Value: Guarantees data integrity across power interruptions with no software intervention or checksum recovery logic. |
| Telecom Base Station Real-Time Logs | Avionics Flight Recorder Buffer |
Use Scenario: Capturing real-time network performance metrics, error counters, and session history in cellular baseband units operating in remote sites. IC Role / Device Role / Timing Role: High-speed SRAM buffer with autonomous failover to lithium backup during brownouts or generator switchover events. Use Value: Sustains 70 ns read/write performance during transient power loss, preventing log gaps in regulatory-compliant reporting. | Use Scenario: Acting as pre-crash data buffer in flight data recorders where deterministic write latency and long-term retention are mandated. IC Role / Device Role / Timing Role: Nonvolatile memory capturing last-second aircraft telemetry before power loss, with guaranteed 5-year archival integrity. Use Value: Meets DO-160E Section 22 crash survivability requirements via sealed lithium integration and no external support components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1270Y-70IND# | Wider VCC range (4.5–5.5 V, ±10%), lower VTP (4.25–4.5 V); identical pinout, speed, and package | Better suited for systems with noisy or loosely regulated 5V supplies; slightly reduced write-protection margin | Select DS1270Y-70IND# if supply variation exceeds ±5%; otherwise DS1270AB-70IND# provides tighter voltage control |
| STK16C88-SI35 | 32K × 8 NV SRAM (256 Kbit), 35 ns access, SOIC-28 package; no integrated lithium - requires external battery and controller | Limited capacity and external power management increase BOM count and board area; not drop-in compatible | Choose only if lower density and surface-mount packaging are prioritized over autonomy and retention assurance |
Compared with DS1270Y-70IND#, DS1270AB-70 offers tighter VCC regulation and higher write-protection threshold, improving robustness in stable 5V systems; versus STK16C88-SI35, DS1270AB-70 delivers 64× more capacity, fully integrated backup, and guaranteed 5-year retention without external components.
Availability
DS1270AB-70 is available at Aetrix Electronics and suitable for industrial PLC configuration storage, medical device calibration data retention, and telecom base station real-time logs requiring stable component supply, long-life data integrity, and RoHS-compliant through-hole packaging.
Supply support for DS1270AB-70 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for industrial, medical, and communications markets.
The DS1270AB-70 belongs to Maxim's nonvolatile SRAM product line, engineered to replace battery-backed DRAM and EEPROM in applications demanding instant-on, unlimited-write, and maintenance-free data retention.
FAQ
What is the guaranteed data retention period for DS1270AB-70 when external power is removed?
The DS1270AB-70 guarantees a minimum of 5 years of data retention in the absence of external power, measured from the time VCC is first applied by the user. This is ensured by the sealed lithium energy source and internal power-switching circuitry, with no external components required to maintain retention.
Does DS1270AB-70 require external circuitry to manage battery backup or write protection?
No, DS1270AB-70 requires no external circuitry for battery backup or write protection. Its integrated lithium cell, voltage monitor, and power-switching logic autonomously activate backup and enforce write lock when VCC falls below 4.5 V, making DS1270AB-70 a complete, self-contained nonvolatile SRAM solution.
What is the operating temperature range specified for DS1270AB-70?
The DS1270AB-70 is rated for industrial temperature operation from -40°C to +85°C, as indicated by the "IND" suffix in its ordering code DS1270AB-70IND#. All DC and AC electrical specifications, including 70 ns access time and 4.75–5.25 V VCC, are guaranteed across this full range.
How does DS1270AB-70 handle bus contention during power transitions?
During power-down, DS1270AB-70 forces all outputs to high-impedance and treats all inputs as don't-care within 1.5 µs of VCC decay, eliminating bus contention. On power-up, it remains in write-protected high-Z state until VCC exceeds 4.75 V and stabilizes, ensuring DS1270AB-70 never drives invalid data onto the bus.
Is DS1270AB-70 pin-compatible with other members of the DS1270 family?
Yes, DS1270AB-70 is pin-compatible with DS1270Y-70, DS1270AB-70#, and DS1270Y-70IND# - all share identical 36-pin EDIP pinout, address/data/control signal assignments, and timing behavior. Voltage tolerance (±5% vs ±10%) and VTP thresholds differ, but mechanical and logical interface compatibility is maintained.
DS1270AB-70 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 36-DIP Module (0.610", 15.49mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 36-EDIP
DS1270AB-70 FAQ
1.How can I place an order for DS1270AB-70 through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1270AB-70 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1270AB-70 reliable?
The price and inventory of DS1270AB-70 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1270AB-70 is usually 5 days.
3.What payment methods are accepted for DS1270AB-70?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1270AB-70 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1270AB-70?
DS1270AB-70 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1270AB-70 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1270AB-70?
For technical support, including DS1270AB-70 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1270AB-70 requirements.
6.How does Aetrix verify that DS1270AB-70 is sourced from the original manufacturer or authorized distributors?
All DS1270AB-70 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1270AB-70 meets industry standards.
7.What is the process for return or replacement of DS1270AB-70?
All DS1270AB-70 units undergo pre-shipment inspection (PSI). If there is an issue with DS1270AB-70, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1270AB-70 part is unused and in its original packaging.
Return procedure for DS1270AB-70:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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