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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1270AB-70IND

Name: DS1270AB-70IND
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1270AB-70IND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1270AB-70IND

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 36-DIP Module (0.610", 15.49mm)

Datasheet:: DS1270AB-70IND.pdf

Description:: IC NVSRAM 16MBIT PARALLEL 36EDIP

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Product details

Overview

DS1270AB-70IND from Maxim Integrated is a 16M-bit (2,097,152 × 8) nonvolatile static RAM with integrated lithium battery backup, 70 ns access time, ±5% V_CC tolerance (4.75–5.25 V), and industrial temperature operation (–40°C to +85°C). It autonomously enables write protection and switches to battery power when V_CC drops below 4.5 V, ensuring data integrity in power-loss scenarios such as industrial PLC memory retention.

For engineers reviewing the DS1270AB-70IND datasheet, DS1270AB-70IND pinout, DS1270AB-70IND application, or DS1270AB-70IND equivalent, key selection criteria include guaranteed 5-year data retention without external power, unlimited write cycles, full CMOS compatibility, and self-contained power-fail detection with no support circuitry required.

Technical Context

The DS1270AB-70IND implements a fully static NV SRAM architecture with on-chip voltage monitoring, automatic lithium source activation at ~3.0 V, and hardware-enforced write protection triggered at V_TP = 4.50–4.75 V. Its control logic ensures CE/WE/OE timing compliance per JEDEC-standard parallel SRAM protocols.

All 21 address lines (A0–A20) and 8 bidirectional data lines (DQ0–DQ7) operate under strict DC and AC specifications: t_ACC = 70 ns, t_WC = 70 ns, I_CCS2 = 100–250 µA in standby, and V_IL/V_IH thresholds compatible with TTL and CMOS microcontrollers.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	16,777,216 bits (2,097,152 × 8) - supports byte-wide microprocessor interfaces without address decoding overhead
Access Time	70 ns - enables direct connection to 14 MHz bus systems with zero wait states
V_CC Range	4.75 V to 5.25 V (±5%) - matches standard 5 V industrial power rails with margin for ripple
Data Retention	≥5 years without external power - achieved via sealed lithium cell and automatic disconnect until first power-up
Operating Temp	–40°C to +85°C - qualified for embedded control in harsh environments including factory automation and energy metering
Write Protection Threshold	V_TP = 4.50–4.75 V - initiates unconditional write lock before V_CC reaches critical levels for SRAM stability
Standby Current	100–250 µA at V_CC–0.5 V - enables low-power hold mode during extended brownout conditions

Pinout & Package

DS1270AB-70IND uses a 36-pin 740-mil Extended Dual In-line Package (EDIP), RoHS-compliant, wave- or hand-solderable only.

Pin/Terminal	Circuit Role	Design Meaning
A0–A20	Address Inputs	21-bit address bus supporting full 2-Mbyte addressing; latched internally on CE/WE transitions
DQ0–DQ7	Bidirectional Data I/O	CMOS-compatible 8-bit data path; high-impedance when OE inactive or during write cycles
CE	Chip Enable	Active-low chip select; must be stable before address setup; controls internal power state during power-down
WE	Write Enable	Active-low write strobe; determines write start/stop edges jointly with CE; disables outputs when asserted
OE	Output Enable	Active-low output control; enables read data drivers only when CE and WE are inactive
V_CC	Power Supply	+5 V ±5% main supply; monitored continuously for fail-detect; powers RAM and control logic
GND	Ground	Reference return for all signals and internal switching circuits
NC	No Connect	Pins 13 and 24 - physically present but unconnected internally; must remain floating

Key Features

Feature	Design Value
Automatic Power-Fail Response	Switches to lithium backup and locks writes within 1.5 µs of V_CC falling below V_TP, preventing corruption during brownouts
Freshness Seal	Lithium source electrically disconnected until first V_CC application > V_TP, preserving full 5-year retention capacity
Unlimited Write Cycles	No endurance wear-out mechanism - supports continuous logging or configuration updates over product lifetime
Zero-Support-Logic Interface	Direct connection to 8-bit microcontrollers or FPGAs without glue logic, level shifters, or external supervisors
Industrial Temperature Qualification	Full AC/DC specs guaranteed across –40°C to +85°C, validated per Maxim's industrial reliability standards

Applications

Industrial PLC Data Logging	Smart Energy Meter Memory
Use Scenario: Storing real-time energy consumption profiles and tariff schedules during grid outages. IC Role / Device Role / Timing Role: Nonvolatile SRAM holding meter firmware variables and billing data with autonomous power switchover. Use Value: Guarantees 5-year data retention without supercapacitors or external battery management, reducing BOM cost and board space.	Use Scenario: Maintaining tamper-proof event logs (e.g., lid opens, voltage sags) in utility-grade meters. IC Role / Device Role / Timing Role: Byte-addressable, write-protected memory that captures timestamped events even during rapid power loss. Use Value: Eliminates need for EEPROM wear-leveling algorithms and extends field life beyond 15 years with no write-cycle limits.
Railway Signaling Controller Memory	Medical Infusion Pump Configuration Storage
Use Scenario: Preserving safety-critical operational parameters and fault history in wayside signaling units exposed to wide ambient swings. IC Role / Device Role / Timing Role: Industrial-temperature NV SRAM providing deterministic 70 ns read/write timing under EMI-heavy rail environments. Use Value: Meets EN 50121-3-2 immunity requirements by avoiding external clock sources or complex power sequencing.	Use Scenario: Storing calibrated dosing profiles, user preferences, and audit trails in battery-powered infusion devices. IC Role / Device Role / Timing Role: Low-quiescent-current (100–250 µA) nonvolatile memory enabling multi-year operation on primary cells. Use Value: Reduces standby current by >90% versus discrete SRAM + external supervisor solutions, extending battery service intervals.

Industrial PLC Data Logging

Smart Energy Meter Memory

Use Scenario: Storing real-time energy consumption profiles and tariff schedules during grid outages.

IC Role / Device Role / Timing Role: Nonvolatile SRAM holding meter firmware variables and billing data with autonomous power switchover.

Use Value: Guarantees 5-year data retention without supercapacitors or external battery management, reducing BOM cost and board space.

Use Scenario: Maintaining tamper-proof event logs (e.g., lid opens, voltage sags) in utility-grade meters.

IC Role / Device Role / Timing Role: Byte-addressable, write-protected memory that captures timestamped events even during rapid power loss.

Use Value: Eliminates need for EEPROM wear-leveling algorithms and extends field life beyond 15 years with no write-cycle limits.

Railway Signaling Controller Memory

Medical Infusion Pump Configuration Storage

Use Scenario: Preserving safety-critical operational parameters and fault history in wayside signaling units exposed to wide ambient swings.

IC Role / Device Role / Timing Role: Industrial-temperature NV SRAM providing deterministic 70 ns read/write timing under EMI-heavy rail environments.

Use Value: Meets EN 50121-3-2 immunity requirements by avoiding external clock sources or complex power sequencing.

Use Scenario: Storing calibrated dosing profiles, user preferences, and audit trails in battery-powered infusion devices.

IC Role / Device Role / Timing Role: Low-quiescent-current (100–250 µA) nonvolatile memory enabling multi-year operation on primary cells.

Use Value: Reduces standby current by >90% versus discrete SRAM + external supervisor solutions, extending battery service intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1270Y-70IND	Wider V_CC range (4.5–5.5 V, ±10%), lower V_TP (4.25–4.5 V); otherwise identical pinout, timing, and retention	Better suited for systems with higher input ripple or legacy 5 V supplies lacking tight regulation	Select DS1270Y-70IND if V_CC tolerance exceeds ±5%; DS1270AB-70IND preferred for tightly regulated 5 V rails
STK16C88-70I	Same density and 70 ns speed, but uses external capacitor-based backup; no integrated lithium; requires external supervisor	Lower component cost but adds design complexity, layout area, and qualification burden for backup circuitry	Choose STK16C88-70I only when lithium-free compliance (e.g., aviation transport) overrides reliability and integration benefits

Compared with DS1270Y-70IND and STK16C88-70I, the DS1270AB-70IND delivers superior system-level simplicity through its self-contained lithium switch and tighter V_CC window-reducing validation effort and eliminating external components while maintaining full industrial temperature performance.

Availability

DS1270AB-70IND is available at Aetrix Electronics and suitable for industrial PLC data logging, smart energy meter memory, and railway signaling controller memory requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for DS1270AB-70IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications applications.

The DS1270AB-70IND belongs to Maxim's nonvolatile SRAM product line, engineered specifically for mission-critical memory retention in infrastructure equipment where power reliability cannot be assumed.

FAQ

What is the guaranteed data retention period for DS1270AB-70IND without external power?

The DS1270AB-70IND guarantees ≥5 years of data retention in the absence of external power, measured from the time V_CC is first applied. This is achieved via an integrated, hermetically sealed lithium energy source that remains electrically disconnected until initial power-up, preserving full capacity. The specification is assured by component selection, process control, and design-not production-tested per unit.

Does DS1270AB-70IND require external circuitry to manage battery backup or power-fail detection?

No, DS1270AB-70IND requires no external circuitry. It integrates a voltage monitor, lithium power switch, and write-protection logic. When V_CC falls below 4.5 V, it automatically disconnects the main supply, enables the lithium source, and places all inputs in "don't care" state and outputs in high-impedance-fully protecting data without support components.

What is the difference between DS1270AB-70IND and DS1270Y-70IND?

The DS1270AB-70IND operates over V_CC = 4.75–5.25 V (±5%) with write protection activating at 4.50–4.75 V, while DS1270Y-70IND supports 4.5–5.5 V (±10%) and triggers protection at 4.25–4.5 V. Both share identical pinout, timing (70 ns), package, temperature range, and retention-making them functionally interchangeable where supply tolerance permits.

Can DS1270AB-70IND be used with microcontrollers that lack dedicated battery-backup control signals?

Yes, DS1270AB-70IND is designed for seamless integration with standard 8-bit microcontrollers. Its autonomous power-fail response eliminates the need for external interrupt signals, GPIO supervision, or software-driven backup enablement. The device handles all transitions-power-down, battery switchover, and power-up recovery-entirely in hardware.

Is DS1270AB-70IND RoHS-compliant and suitable for industrial reflow processes?

Yes, DS1270AB-70IND is RoHS-compliant (denoted by "#" suffix) and qualified for wave or hand soldering only. Its 36-pin 740-mil EDIP package is not rated for reflow due to internal lithium cell constraints; per Maxim's documentation, exposure to peak temperatures above 260°C or reflow profiles may compromise seal integrity and retention performance.

DS1270AB-70IND Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 36-DIP Module (0.610", 15.49mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 16Mbit

Memory Organization:: 2M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 4.75V ~ 5.25V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 36-EDIP

DS1270AB-70IND FAQ

1.How can I place an order for DS1270AB-70IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1270AB-70IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1270AB-70IND reliable?

The price and inventory of DS1270AB-70IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1270AB-70IND is usually 5 days.

3.What payment methods are accepted for DS1270AB-70IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1270AB-70IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1270AB-70IND?

DS1270AB-70IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1270AB-70IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1270AB-70IND?

For technical support, including DS1270AB-70IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1270AB-70IND requirements.

6.How does Aetrix verify that DS1270AB-70IND is sourced from the original manufacturer or authorized distributors?

All DS1270AB-70IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1270AB-70IND meets industry standards.

7.What is the process for return or replacement of DS1270AB-70IND?

All DS1270AB-70IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1270AB-70IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1270AB-70IND part is unused and in its original packaging.

Return procedure for DS1270AB-70IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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