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Analog Devices Inc./Maxim Integrated DS1270W-100#
- Part No.:
- DS1270W-100#
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 36-DIP Module (0.610", 15.49mm)
- Datasheet:
-
DS1270W-100#.pdf
- Description:
- IC NVSRAM 16MBIT PARALLEL 36EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,650
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Product details
Overview
DS1270W-100# from Maxim Integrated is a 3.3V, 8Mb nonvolatile SRAM (1,048,576 × 8) with lithium-backed data retention, 100ns read/write access time, and automatic write protection during power loss. It operates across industrial temperature range (–40°C to +85°C), supports unlimited write cycles, and requires no external support circuitry for microprocessor interfacing in embedded data-logging systems.
For engineers reviewing the DS1270W-100# datasheet, DS1270W-100# pinout, DS1270W-100# application, or DS1270W-100# equivalent, key selection considerations include VCC fail-detect threshold (2.8V–3.0V), battery-freshness seal activation at first power-up, tACC = 100ns timing compliance, and 36-pin 740mil extended DIP package compatibility with legacy board layouts.
Technical Context
The DS1270W-100# integrates a self-contained lithium energy source and voltage-monitoring control circuitry that triggers unconditional write protection when VCC falls below ~2.8V and switches to battery backup below ~2.5V. Its CMOS architecture enables low-power standby current (100–250µA) and full static operation without refresh.
It implements standard parallel SRAM interface logic: CE/WE/OE dual-active-low control, 20-bit address bus (A0–A19), and 8-bit bidirectional data bus (DQ0–DQ7). All inputs become "don't care" and outputs go high-impedance during data-retention mode, ensuring system-level isolation during power failure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 8,388,608 bits (1,048,576 × 8) - supports byte-wide microprocessor data bus without glue logic |
| Access Time | 100 ns - meets timing requirements for 10 MHz bus interfaces with zero wait states |
| VCC Operating Range | 3.0 V to 3.6 V - compatible with standard 3.3V LDOs and tolerant of ±10% supply variation |
| Write Protection Threshold | 2.8 V to 3.0 V - initiates automatic data safeguard before brownout-induced corruption occurs |
| Data Retention | 10 years minimum without external power - guaranteed after first power application, enabled by sealed lithium cell |
| Temperature Range | –40°C to +85°C (IND) - qualified for industrial control, transportation, and outdoor telemetry environments |
| Standby Current | 100 µA (CE = VCC – 0.2V) - enables ultra-low-power sleep modes in battery-backed systems |
Pinout & Package
DS1270W-100# uses a 36-pin 740mil extended dual in-line package (EDIP), RoHS-compliant, with through-hole mounting and wave/hand-solder compatible leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus enabling full 1MB addressing; TTL-compatible input thresholds |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus; high-impedance during write cycles when OE = high |
| CE | Chip Enable | Active-low chip select; must be stable before address setup; controls device enable/disable |
| WE | Write Enable | Active-low write strobe; falling edge (with CE) initiates write; disables outputs in tODW |
| OE | Output Enable | Active-low output control; kept high during writes to prevent bus contention |
| VCC | Power Supply | +3.3V primary supply; powers RAM core and control logic; monitored for fail detection |
| GND | Ground | Reference return path for all signals and internal switching circuits |
| NC | No Connect | Pins 12, 24, and 35 are unconnected internally; must remain floating or grounded per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Lithium freshness seal | Energy source electrically disconnected until first VCC application > VTP, preserving full 10-year retention capacity |
| Automatic VCC monitoring | Dedicated circuitry detects decay below 2.8V and asserts unconditional write protection within 1.5µs (tPD) |
| Zero-support-interface | No external capacitors, regulators, or control logic required-direct connection to 3.3V MPU bus |
| Unlimited write endurance | No wear-out mechanism; supports continuous logging or frequent configuration updates without degradation |
| High-impedance isolation | All outputs enter Hi-Z state during power-down and retention mode, preventing backfeeding or bus conflicts |
Applications
| Industrial Data Logger | Medical Device Memory Backup |
|---|---|
Use Scenario: Continuous sensor sampling in programmable logic controllers during mains interruption. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time process variables and event timestamps. Use Value: Guarantees 10-year data integrity without battery replacement; eliminates need for EEPROM wear leveling or flash erase cycles. | Use Scenario: Preserving patient therapy settings and calibration history in portable infusion pumps. IC Role / Device Role / Timing Role: Fail-safe memory holding critical configuration and audit trail data during power removal. Use Value: Meets IEC 62304 Class C software safety requirements via deterministic, zero-latency write protection at 2.8V threshold. |
| Avionics Black Box Recorder | Railway Signaling Controller |
Use Scenario: Capturing flight parameters during emergency power loss in certified avionics units. IC Role / Device Role / Timing Role: Primary volatile memory with seamless lithium switchover for crash-data preservation. Use Value: UL E99151 recognition and –40°C to +85°C qualification support DO-160 environmental compliance. | Use Scenario: Storing interlocking logic state and fault logs in wayside signaling cabinets exposed to rail-side thermal cycling. IC Role / Device Role / Timing Role: Industrial-grade NV SRAM retaining last-valid operational state across repeated grid dips. Use Value: Eliminates supercapacitor-based backup subsystems, reducing BOM count and field failure modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK12C68-AW50 | 5V-only supply; 50ns access time; 64K × 8 organization; no integrated lithium (requires external battery) | Legacy 5V systems with faster timing needs but lower density and higher external component count | Select only if existing 5V infrastructure prohibits 3.3V redesign and density < 1MB is acceptable |
| FM24CL64B | I²C interface; 64Kb FRAM; 3.3V; 1M write cycles (not unlimited); no lithium-retention relies on capacitor charge | Low-pin-count designs where serial interface suffices and data volume is ≤8KB | Prefer for space-constrained PCBs needing I²C simplicity, but avoid for high-frequency logging or >10-year retention demands |
Compared with STK12C68-AW50 and FM24CL64B, DS1270W-100# uniquely delivers 8Mb density, true unlimited writes, integrated lithium with freshness seal, and deterministic 2.8V–3.0V write-protection window-making it the only option for long-life, high-throughput, drop-in parallel SRAM replacement in industrial and safety-critical systems.
Availability
DS1270W-100# is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, and railway signaling controllers requiring stable component supply over extended production lifecycles.
Supply support for DS1270W-100# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in precision analog, mixed-signal, and high-reliability ICs for industrial, automotive, and communications markets.
The DS1270W-100# belongs to the DS1265W family of nonvolatile SRAMs designed specifically for mission-critical data retention in environments where power interruption is common and data integrity is non-negotiable.
FAQ
What is the guaranteed data retention period for DS1270W-100#?
The DS1270W-100# guarantees a minimum of 10 years of data retention in the absence of external power, measured cumulatively from the moment VCC is first applied and the lithium energy source is activated. This specification assumes proper handling per the freshness seal protocol and operation within rated temperature limits.
Does DS1270W-100# require external components for battery backup functionality?
No, DS1270W-100# does not require external components for battery backup. It integrates a sealed lithium energy source and voltage-monitoring control circuitry. The lithium cell remains electrically disconnected until first power-up, and automatic switchover occurs below ~2.5V-no capacitors, regulators, or discrete protection devices are needed.
What is the function of the VTP parameter in DS1270W-100#?
VTP (Write Protection Voltage) for DS1270W-100# is specified as 2.8V to 3.0V. When VCC drops to or below this threshold, the device unconditionally enables write protection to prevent data corruption. This parameter defines the precise voltage window at which the internal control logic initiates fail-safe behavior-critical for reliable brownout response.
Can DS1270W-100# operate with a 3.0V supply?
Yes, DS1270W-100# is fully functional at 3.0V, which is its absolute minimum operating VCC per the Recommended DC Operating Conditions. At 3.0V, it maintains 100ns access time, valid logic thresholds (VIH ≥ 2.2V), and correct write-protection activation-ensuring robust operation across the full 3.0V–3.6V range.
Is DS1270W-100# pin-compatible with other DS1265W speed grades?
Yes, DS1270W-100# shares identical pinout, package (36-pin 740mil EDIP), and signal definitions with all DS1265W variants including DS1265W-120# and DS1265W-150#. Speed grade differences affect only AC timing parameters (e.g., tACC), not pin assignment or DC behavior-enabling direct substitution where timing margins allow.
DS1270W-100# Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 36-DIP Module (0.610", 15.49mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 36-EDIP
DS1270W-100# FAQ
1.How can I place an order for DS1270W-100# through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1270W-100# on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1270W-100# reliable?
The price and inventory of DS1270W-100# are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1270W-100# is usually 5 days.
3.What payment methods are accepted for DS1270W-100#?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1270W-100# transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1270W-100#?
DS1270W-100# orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1270W-100# order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1270W-100#?
For technical support, including DS1270W-100# datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1270W-100# requirements.
6.How does Aetrix verify that DS1270W-100# is sourced from the original manufacturer or authorized distributors?
All DS1270W-100# products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1270W-100# meets industry standards.
7.What is the process for return or replacement of DS1270W-100#?
All DS1270W-100# units undergo pre-shipment inspection (PSI). If there is an issue with DS1270W-100#, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1270W-100# part is unused and in its original packaging.
Return procedure for DS1270W-100#:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1270W-100# Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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AT24C04C-SSHM-T
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