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Analog Devices Inc./Maxim Integrated DS1270W-100IND#

Part No.:
DS1270W-100IND#
Manufacturer:
Analog Devices Inc./Maxim Integrated
Category:
Memory
Package:
36-DIP Module (0.610", 15.49mm)
Datasheet:
AetrixDS1270W-100IND#.pdf
Description:
IC NVSRAM 16MBIT PARALLEL 36EDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,133

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Product details

Overview

DS1270W-100IND# from Maxim Integrated (now Analog Devices) is a 3.3V, 8Mb nonvolatile SRAM with 20-bit address bus (A0–A19), 8-bit data bus (DQ0–DQ7), and 100ns access time. It integrates a lithium energy source and automatic power-fail write protection for industrial applications requiring persistent memory without external backup circuitry.

For engineers reviewing the DS1270W-100IND# datasheet, DS1270W-100IND# pinout, DS1270W-100IND# application, or DS1270W-100IND# equivalent, key selection criteria include guaranteed 10-year data retention at -40°C to +85°C, unlimited write cycles, VCC fail-detect threshold at 2.8V, and self-contained battery switchover without support components.

Technical Context

The DS1270W-100IND# implements a fully static NV SRAM architecture with integrated lithium power-switching circuitry that monitors VCC continuously. When VCC drops below ~2.5V, it disconnects external supply and connects the internal lithium source to retain RAM contents; during power-up above ~2.5V, it reverts to VCC and isolates the battery.

It operates in three distinct modes: Read (CE/OE low, WE high), Write (CE/WE low), and Data-Retention (VCC < 3.0V, all inputs "don't care", outputs high-Z). Write protection activates unconditionally at VTP = 2.8–3.0V, and the freshness seal ensures full battery capacity until first power application.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size8,388,608-bit (1,048,576 × 8) - supports full byte-addressable storage without external decoding
Access Time100ns - enables direct interfacing with legacy microprocessors running at ≤10MHz
Data Retention10 years minimum at -40°C to +85°C - no external capacitor or supercap required for hold-up
Supply Voltage3.0V to 3.6V - compatible with standard 3.3V logic rails and tolerant of ±0.3V variation
Write Protection ThresholdVTP = 2.8–3.0V - triggers automatic lockout before data corruption occurs during brownout
Standby Current100–250µA - ultra-low quiescent draw during battery-backup mode preserves lithium life
Operating Temperature-40°C to +85°C (IND grade) - qualified for industrial control, metering, and transportation systems

Pinout & Package

DS1270W-100IND# uses a 36-pin 740mil Extended Dual In-line Package (EDIP), RoHS-compliant with lead-free finish (# suffix). The package is wave- or hand-solderable only, with no reflow compatibility.

Pin/TerminalCircuit RoleDesign Meaning
A0–A19Address Inputs20-bit parallel address bus enabling full 1MB addressing space
DQ0–DQ7Data I/OBi-directional 8-bit data bus with TTL-compatible levels and 2mA drive capability
CEChip EnableActive-low chip select; must be stable before address setup for valid access
WEWrite EnableActive-low write strobe; controls data latching and output disable during writes
OEOutput EnableActive-low output enable; used only in read mode to gate data drivers
VCCPower Supply+3.3V primary supply; powers logic and enables lithium freshness seal on first power-up
GNDGroundReference return path for all signals and internal switching circuitry
NCNo ConnectThree pins (pins 12, 23, 24) are internally unconnected - must remain floating

Key Features

FeatureDesign Value
Self-contained lithium backupEliminates need for external battery, diodes, capacitors, or charge management ICs
Automatic VCC monitoring & switchoverHardware-level detection and sub-µs response to brownout without firmware intervention
Unlimited write cyclesEnables frequent logging or configuration updates without wear-out concerns
Freshness sealLithium remains electrically disconnected until first VCC application, preserving full 10-year shelf life
Industrial temperature ratingGuaranteed operation across -40°C to +85°C ambient, validated per MIL-STD-883 methods

Applications

Smart Energy MeteringIndustrial PLC Data Logging

Use Scenario: Storing tariff schedules, consumption history, and tamper events in electricity/water/gas meters deployed outdoors.

IC Role / Device Role / Timing Role: Nonvolatile memory storing critical billing and diagnostic data across repeated power cycles and grid outages.

Use Value: Guarantees 10-year data integrity without battery replacement or maintenance, meeting ANSI C12.22 and IEC 62056 standards.

Use Scenario: Capturing sensor readings, alarm timestamps, and operational states in programmable logic controllers operating in factory environments.

IC Role / Device Role / Timing Role: Fail-safe RAM buffer that retains last-known state and process variables during unexpected AC loss.

Use Value: Enables deterministic restart and fault recovery without data loss, supporting IEC 61131-3 runtime requirements.

Railway Signaling ControlMedical Diagnostic Equipment

Use Scenario: Holding configuration parameters and event logs in track-side signaling units exposed to wide thermal swings and vibration.

IC Role / Device Role / Timing Role: Industrial-grade NV SRAM providing deterministic memory retention during train-induced voltage sags.

Use Value: Meets EN 50121-3-2 EMC and EN 50155 rail certification requirements for data persistence under harsh conditions.

Use Scenario: Storing calibration coefficients, patient session data, and error logs in portable ultrasound and ECG devices.

IC Role / Device Role / Timing Role: Battery-backed memory preserving critical settings and diagnostics when main power is removed for transport or sterilization.

Use Value: Ensures FDA 21 CFR Part 11 compliance for audit trails and eliminates recalibration after power interruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STK12C685V-only supply; 70ns access; no built-in lithium - requires external battery and protection circuitrySuitable for legacy 5V systems but adds BOM cost and layout complexity for backup pathChoose only if existing 5V design forbids voltage translation and board space allows discrete backup components
AS6C8008Standard 3.3V SRAM (no NV function); 15ns access; no data retention on power lossRequires external NV solution (FRAM, EEPROM, or battery-backed controller) for persistenceSelect when speed >100ns is mandatory and external NV management is already implemented

Compared with STK12C68 and AS6C8008, DS1270W-100IND# delivers true single-chip nonvolatility with zero external components, eliminating design risk from battery leakage, diode drop, or capacitor aging - critical for long-life industrial deployments where field service is impractical.

Availability

DS1270W-100IND# is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, and railway signaling applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial-temperature performance.

Supply support for DS1270W-100IND# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated, now part of Analog Devices, designs precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications markets.

The DS1270W-100IND# belongs to Maxim's legacy nonvolatile SRAM product line, engineered specifically for mission-critical applications where data persistence during power failure cannot rely on software or external hardware.

FAQ

What is the guaranteed data retention period for DS1270W-100IND# under industrial temperature conditions?

The DS1270W-100IND# guarantees a minimum of 10 years of data retention at temperatures ranging from -40°C to +85°C, measured cumulatively from the time VCC is first applied. This specification accounts for lithium self-discharge and internal circuit leakage under worst-case thermal stress, with no external components required to achieve this rating.

Does DS1270W-100IND# require external circuitry to enable battery backup functionality?

No, DS1270W-100IND# does not require external circuitry for battery backup. Its integrated lithium energy source and power-switching circuitry automatically engage when VCC falls below ~2.5V, and the freshness seal ensures full battery capacity until first power application. No diodes, capacitors, or charge controllers are needed.

What happens to DS1270W-100IND# outputs during power-down?

During power-down, when VCC drops below 3.0V, DS1270W-100IND# places all outputs in high-impedance state and disables all inputs ("don't care" condition). This prevents bus contention and ensures clean isolation from the host system while the internal lithium source maintains RAM contents.

Is DS1270W-100IND# pin-compatible with other members of the DS1265W family?

Yes, DS1270W-100IND# shares identical pinout, signal definitions, and timing behavior with DS1265W-100IND#, including A0–A19, DQ0–DQ7, CE, WE, OE, VCC, GND, and NC assignments. Both use the same 36-pin 740mil EDIP package and comply with the same industrial temperature and reliability specifications.

How does the write protection threshold (VTP) function in DS1270W-100IND#?

The DS1270W-100IND# asserts unconditional write protection when VCC falls to 2.8–3.0V (VTP range), preventing any further writes before data corruption can occur. This hardware-level lockout is independent of software control and activates within 1.5µs of VCC decay detection, ensuring data integrity during brownout events.

DS1270W-100IND# Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc./Maxim Integrated
Series:
-
Package/Case:
36-DIP Module (0.610", 15.49mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
16Mbit
Memory Organization:
2M x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
100ns
Access Time:
100 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
36-EDIP

DS1270W-100IND# FAQ

1.How can I place an order for DS1270W-100IND# through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1270W-100IND# on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1270W-100IND# reliable?

The price and inventory of DS1270W-100IND# are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1270W-100IND# is usually 5 days.

3.What payment methods are accepted for DS1270W-100IND#?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1270W-100IND# transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1270W-100IND#?

DS1270W-100IND# orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1270W-100IND# order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1270W-100IND#?

For technical support, including DS1270W-100IND# datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1270W-100IND# requirements.

6.How does Aetrix verify that DS1270W-100IND# is sourced from the original manufacturer or authorized distributors?

All DS1270W-100IND# products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1270W-100IND# meets industry standards.

7.What is the process for return or replacement of DS1270W-100IND#?

All DS1270W-100IND# units undergo pre-shipment inspection (PSI). If there is an issue with DS1270W-100IND#, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1270W-100IND# part is unused and in its original packaging.

Return procedure for DS1270W-100IND#:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DS1270W-100IND# Tags

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  • DS1270W-100IND# PDF
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  • Analog Devices Inc./Maxim Integrated DS1270W-100IND#
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