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Analog Devices Inc./Maxim Integrated DS1270Y-100#

Name: DS1270Y-100#
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1270Y-100#
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1270Y-100#

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 36-DIP Module (0.610", 15.49mm)

Datasheet:: DS1270Y-100#.pdf

Description:: IC NVSRAM 16MBIT PARALLEL 36EDIP

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Inventory:2,597

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Product details

Overview

DS1270Y-100# from Maxim Integrated is a 16Mbit (2,097,152 × 8) nonvolatile static RAM with integrated lithium battery backup, ±10% V_CC tolerance (4.5V–5.5V), 70ns access time, and automatic power-fail write protection. It serves as a drop-in SRAM replacement in systems requiring persistent data retention during main power loss-e.g., industrial PLCs, medical device configuration storage, and telecom base station real-time logs.

For engineers reviewing the DS1270Y-100# datasheet, DS1270Y-100# pinout, DS1270Y-100# application, or DS1270Y-100# equivalent, key selection criteria include guaranteed 5-year data retention without external power, full V_CC monitoring and autonomous lithium switchover at ~3.0V, and compatibility with standard parallel microprocessor bus interfaces using CE/OE/WE control.

Technical Context

The DS1270Y-100# implements a self-contained power-fail detection and battery switchover circuit that monitors V_CC continuously; when V_CC drops below 4.25V (V_TP min), it unconditionally enables write protection and transitions to high-impedance I/O states. At ~3.0V, the internal switch connects the lithium cell to maintain SRAM contents.

It operates as a fully static, asynchronous parallel memory with 21 address lines (A0–A20), 8 bidirectional data lines (DQ0–DQ7), and standard TTL-compatible control signals (CE, WE, OE). No external support circuitry-such as backup capacitors, supervisors, or external battery management-is required for nonvolatile operation.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	16,777,216 bits (2,097,152 × 8) - supports byte-wide microprocessor data buses without interleaving.
Access Time	70 ns - ensures compatibility with 14 MHz bus timing without wait states in standard 80Cxx/68K-based systems.
V_CC Operating Range	4.5V to 5.5V (±10%) - accommodates wide-tolerance power supplies common in legacy industrial designs.
Data Retention	≥5 years without external power - enabled by factory-fresh lithium cell disconnected until first power-up.
Write Protection Threshold	V_TP = 4.25V–4.5V - triggers unconditional write lock before V_CC reaches levels risking SRAM corruption.
Power Switching Threshold	~3.0V - activates lithium backup supply while maintaining CMOS-compatible logic thresholds during brownout.
Operating Temperature	0°C to +70°C (Commercial grade) - validated for use in controlled-environment embedded controllers and instrumentation.

Pinout & Package

DS1270Y-100# is housed in a 36-pin 740-mil Extended Dual In-line Package (EDIP), with lead finish RoHS-compliant (denoted by # suffix). The package includes internal hermetic sealing for long-term lithium cell integrity and is wave- or hand-solderable only.

Pin/Terminal	Circuit Role	Design Meaning
A0–A20	Address Inputs	21-bit address bus supporting full 2MB addressing; all inputs must remain stable during read/write cycles.
DQ0–DQ7	Bidirectional Data I/O	8-bit parallel data path; high-impedance during write cycles if OE is high, automatically tri-stated on power fail.
CE	Chip Enable	Active-low chip select; deassertion disables outputs and enters low-power standby (ICCS2 ≤ 250 µA).
WE	Write Enable	Active-low write strobe; falling edge initiates write cycle; must be held high ≥5 ns before next cycle (tWR1).
OE	Output Enable	Active-low output enable; controls data bus drivers independently of CE/WE; must be high during writes to avoid contention.
V_CC	Power Supply	+5V nominal supply; monitored continuously for voltage decay; powers SRAM core and control logic.
GND	Ground Reference	Signal and power ground reference; decoupling capacitor required within 1 cm of V_CC/GND pins.
NC	No Connect	Pins 12 and 24 are internally unused; must remain unconnected per datasheet layout guidance.

Key Features

Feature	Design Value
Automatic Power-Fail Response	Monitors V_CC in real time and switches to lithium backup within 1.5 µs (t_PD) of out-of-tolerance detection-no firmware or external supervisor needed.
Freshness Seal	Lithium cell electrically disconnected at shipment; activated only on first V_CC application > V_TP, preserving full 5-year retention capacity.
Unlimited Write Cycles	No endurance limitation on SRAM core-supports continuous logging or configuration updates without wear leveling or block management.
Full Bus Compatibility	TTL-level inputs and outputs, 70ns timing, and standard CE/OE/WE protocol enable direct replacement of volatile SRAMs like AS6C1008 or IS61LV25616.
Zero External Support Circuitry	Integrated voltage monitor, power switch, and lithium source eliminate need for external supervisors, diodes, or backup capacitors-reducing BOM count and PCB area.

Applications

Industrial PLC Configuration Storage	Medical Device Calibration Data Retention
Use Scenario: Storing user-defined I/O mapping, PID tuning parameters, and alarm thresholds in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-access, byte-addressable storage that survives AC mains interruption or emergency shutdown. Use Value: Eliminates reliance on EEPROM write delays or flash erase cycles-ensures sub-70ns parameter updates and guaranteed 5-year retention without battery replacement.	Use Scenario: Holding factory-calibrated sensor offsets, patient-specific therapy settings, and audit logs in portable infusion pumps and diagnostic monitors. IC Role / Device Role / Timing Role: Fail-safe memory buffer that retains critical calibration data during battery swaps or power cycling in Class II medical equipment. Use Value: Meets IEC 62304 data persistence requirements with no external backup components-reducing risk of calibration drift or data loss during maintenance.
Telecom Base Station Real-Time Logs	Avionics Flight Recorder Buffer Memory
Use Scenario: Capturing timestamped event logs, signal strength metrics, and handover statistics in cellular BTS hardware operating in remote or grid-unstable locations. IC Role / Device Role / Timing Role: High-speed parallel memory acting as circular buffer for transient operational telemetry, backed by autonomous lithium switchover. Use Value: Sustains uninterrupted logging during brownouts lasting seconds to minutes-enabling root-cause analysis without external UPS or supercapacitor hold-up.	Use Scenario: Serving as short-term volatile buffer for flight parameter capture prior to transfer to hardened nonvolatile storage in aircraft black box recorders. IC Role / Device Role / Timing Role: Low-latency, radiation-tolerant SRAM stage ensuring zero-data-loss capture during rapid power collapse (e.g., engine failure). Use Value: Guarantees retention of last 30+ seconds of critical flight data even after total electrical failure-meeting DO-178C traceability and ED-112A crash survivability expectations.

Industrial PLC Configuration Storage

Medical Device Calibration Data Retention

Use Scenario: Storing user-defined I/O mapping, PID tuning parameters, and alarm thresholds in programmable logic controllers deployed in factory automation environments.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-access, byte-addressable storage that survives AC mains interruption or emergency shutdown.

Use Value: Eliminates reliance on EEPROM write delays or flash erase cycles-ensures sub-70ns parameter updates and guaranteed 5-year retention without battery replacement.

Use Scenario: Holding factory-calibrated sensor offsets, patient-specific therapy settings, and audit logs in portable infusion pumps and diagnostic monitors.

IC Role / Device Role / Timing Role: Fail-safe memory buffer that retains critical calibration data during battery swaps or power cycling in Class II medical equipment.

Use Value: Meets IEC 62304 data persistence requirements with no external backup components-reducing risk of calibration drift or data loss during maintenance.

Telecom Base Station Real-Time Logs

Avionics Flight Recorder Buffer Memory

Use Scenario: Capturing timestamped event logs, signal strength metrics, and handover statistics in cellular BTS hardware operating in remote or grid-unstable locations.

IC Role / Device Role / Timing Role: High-speed parallel memory acting as circular buffer for transient operational telemetry, backed by autonomous lithium switchover.

Use Value: Sustains uninterrupted logging during brownouts lasting seconds to minutes-enabling root-cause analysis without external UPS or supercapacitor hold-up.

Use Scenario: Serving as short-term volatile buffer for flight parameter capture prior to transfer to hardened nonvolatile storage in aircraft black box recorders.

IC Role / Device Role / Timing Role: Low-latency, radiation-tolerant SRAM stage ensuring zero-data-loss capture during rapid power collapse (e.g., engine failure).

Use Value: Guarantees retention of last 30+ seconds of critical flight data even after total electrical failure-meeting DO-178C traceability and ED-112A crash survivability expectations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STK16C85-70I	Same 16M×8 organization, 70ns speed, but uses external lithium coin cell and requires external power-fail controller (e.g., MAX690); no built-in V_CC monitor or automatic switchover.	Suitable where board space allows discrete battery holder and supervisor IC; not drop-in compatible due to different pinout and control interface.	Select STK16C85-70I only if existing design already includes external supervisor and battery footprint-requires PCB redesign for DS1270Y-100# migration.
ISL71090SEH	Radiation-hardened 16Mb NV SRAM with SEU mitigation; 100ns access time; operates over -55°C to +125°C; requires external 3.3V supply and separate backup battery management.	Targeted at space-grade applications (MIL-PRF-38535 Class V); significantly higher cost and longer lead time; incompatible voltage and timing specs for commercial/industrial use.	Choose ISL71090SEH only for satellite or high-reliability aerospace deployments-not viable for cost-sensitive terrestrial systems using DS1270Y-100#.

Compared with STK16C85-70I and ISL71090SEH, the DS1270Y-100# delivers true single-chip nonvolatility with no external components, tighter timing (70ns vs. 100ns), and lower system-level BOM cost-making it optimal for industrial, medical, and telecom applications where integration, reliability, and time-to-market are prioritized.

Availability

DS1270Y-100# is available at Aetrix Electronics and suitable for industrial PLCs, medical device calibration storage, and telecom base station logging requiring stable component supply, long-lifecycle availability, and RoHS-compliant sourcing.

Supply support for DS1270Y-100# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a U.S.-based semiconductor company specializing in high-performance analog, mixed-signal, and power management ICs for industrial, automotive, and communications markets.

The DS1270Y-100# belongs to Maxim's legacy nonvolatile SRAM product line, engineered specifically to replace battery-backed SRAM modules with monolithic, self-contained solutions for mission-critical data retention in power-unstable environments.

FAQ

What is the guaranteed data retention period for DS1270Y-100# without external power?

The DS1270Y-100# guarantees ≥5 years of data retention in the absence of external power, measured from the time V_CC is first applied. This is ensured by a factory-fresh lithium cell disconnected until initial power-up and validated through component selection and process control-not production-tested per unit.

Does DS1270Y-100# require external circuitry for battery backup operation?

No, the DS1270Y-100# requires no external circuitry for nonvolatile operation. Its integrated lithium energy source, voltage monitor, and power-switching circuit autonomously manage backup activation, write protection, and SRAM retention-eliminating the need for external supervisors, diodes, or capacitors.

What is the V_TP (write protection voltage) range for DS1270Y-100#?

The DS1270Y-100# has a write protection threshold (V_TP) of 4.25V to 4.5V. When V_CC falls below this range, the device unconditionally enables write protection, places all inputs in "don't care" state, and forces outputs to high-impedance-preventing data corruption during brownout.

Can DS1270Y-100# be used as a direct replacement for standard volatile SRAMs?

Yes, the DS1270Y-100# is pin- and function-compatible with standard 36-pin 2MB × 8 SRAMs (e.g., AS6C1008, CY62167). Its TTL-compatible interface, 70ns timing, and identical CE/OE/WE protocol allow drop-in replacement-provided the host system tolerates the slight increase in standby current (≤250 µA) and does not drive NC pins.

Is DS1270Y-100# RoHS-compliant and what does the '#' suffix indicate?

Yes, DS1270Y-100# is RoHS-compliant-the '#' suffix explicitly denotes compliance under EU RoHS Directive 2011/65/EU, including exemption for lead in high-melting-temperature solder alloys. The device meets UL recognition file E99151 and is rated for wave or hand soldering only.

DS1270Y-100# Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 36-DIP Module (0.610", 15.49mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 16Mbit

Memory Organization:: 2M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 100ns

Access Time:: 100 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 36-EDIP

DS1270Y-100# FAQ

1.How can I place an order for DS1270Y-100# through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1270Y-100# on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1270Y-100# reliable?

The price and inventory of DS1270Y-100# are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1270Y-100# is usually 5 days.

3.What payment methods are accepted for DS1270Y-100#?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1270Y-100# transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1270Y-100#?

DS1270Y-100# orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1270Y-100# order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1270Y-100#?

For technical support, including DS1270Y-100# datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1270Y-100# requirements.

6.How does Aetrix verify that DS1270Y-100# is sourced from the original manufacturer or authorized distributors?

All DS1270Y-100# products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1270Y-100# meets industry standards.

7.What is the process for return or replacement of DS1270Y-100#?

All DS1270Y-100# units undergo pre-shipment inspection (PSI). If there is an issue with DS1270Y-100#, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1270Y-100# part is unused and in its original packaging.

Return procedure for DS1270Y-100#:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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