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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1270Y-100

Name: DS1270Y-100
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1270Y-100
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1270Y-100

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 36-DIP Module (0.610", 15.49mm)

Datasheet:: DS1270Y-100.pdf

Description:: IC NVSRAM 16MBIT PARALLEL 36EDIP

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Product details

Overview

DS1270Y-100 from Maxim Integrated is a 16M-bit (2,097,152 × 8) nonvolatile static RAM with integrated lithium battery backup, full ±10% V_CC operation (4.5V–5.5V), 70 ns access time, and guaranteed 5-year data retention without external power. It serves as a drop-in SRAM replacement in systems requiring persistent memory during power loss, such as industrial controllers and embedded data loggers.

For engineers reviewing the DS1270Y-100 datasheet, DS1270Y-100 pinout, DS1270Y-100 application, or DS1270Y-100 equivalent, key selection criteria include its automatic V_CC-monitored write protection at 4.25V, unlimited write cycles, CMOS-compatible interface timing, and 36-pin 740-mil extended DIP package with verified A0–A20/DQ0–DQ7/CE/WE/OE signal mapping.

Technical Context

The DS1270Y-100 implements a self-contained power-fail detection circuit that monitors V_CC continuously and triggers automatic lithium source activation when voltage drops below ~3.0V, while simultaneously enabling unconditional write protection and placing outputs in high-impedance state. Its control logic enforces strict timing for read (t_ACC = 70 ns, t_OE = 35 ns) and write (t_WC = 70 ns, t_WP = 55 ns) cycles using CE, WE, and OE signals with defined setup/hold requirements.

Unlike standard SRAMs, the DS1270Y-100 integrates a freshness-seal mechanism that electrically isolates the lithium cell until first V_CC application above V_TP = 4.25V, preserving full energy capacity. During power-up, it transitions cleanly from battery-backed retention mode to normal V_CC-powered operation once V_CC exceeds 4.5V, with t_REC = 125 ms recovery to full functionality.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	16,777,216 bits (2,097,152 × 8) - supports byte-wide microprocessor data bus interfacing without address decoding overhead
Access Time	70 ns - enables direct connection to 14 MHz bus systems with no wait states
V_CC Range	4.5V to 5.5V (±10%) - tolerates wide supply variation in industrial power rails without regulation
Data Retention	5 years minimum without power - eliminates need for external battery management or refresh circuitry
Write Protection Threshold	V_TP = 4.25V (min) - initiates automatic write lock before system brownout corrupts data
Operating Temperature	0°C to +70°C (Commercial) - validated for stable operation in office and light-industrial environments
Package	36-pin 740-mil Extended DIP - compatible with through-hole PCB assembly and legacy socketing

Pinout & Package

DS1270Y-100 is housed in a 36-pin 740-mil Extended Dual In-line Package (EDIP), with pins arranged across two 18-pin rows. The package includes internal lithium cell, power-switching circuitry, and NV-SRAM die in a single hermetically sealed module.

Pin/Terminal	Circuit Role	Design Meaning
A0–A20	Address Inputs	21-bit address bus supporting full 2MB addressing; all must remain stable during read/write cycles
DQ0–DQ7	Data I/O	Bi-directional 8-bit data bus; high-impedance during write if OE = VIH, enabled only when CE and OE are active low
CE	Chip Enable	Active-low chip select; falling edge initiates read/write; rising edge terminates cycle; controls output drivers
WE	Write Enable	Active-low write strobe; falling edge starts write; rising edge ends write; disables outputs during write if OE active
OE	Output Enable	Active-low output enable; must be high during writes to avoid bus contention; determines t_OE timing
V_CC	Power Supply	+5V supply input; monitored for fail condition; powers SRAM core and control logic above 4.5V
GND	Ground	Reference return path for all signals and internal circuitry; required for proper lithium switch operation
NC	No Connect	Pins 12 and 24 are unconnected internally; must remain floating or tied to GND per layout guidelines

Key Features

Feature	Design Value
Automatic Power-Fail Response	Switches to lithium backup and locks writes within 1.5 µs of V_CC decay below threshold, preventing partial writes
Freshness-Sealed Lithium Cell	Lithium source remains disconnected until first V_CC > 4.25V, ensuring full 5-year retention capacity from shipment date
Unlimited Write Cycles	No endurance limit on SRAM core - supports continuous logging or buffer updates without wear-out concerns
Full V_CC Tolerance	Operates across 4.5V–5.5V range, eliminating need for tight-regulation supplies in cost-sensitive designs
CMOS-Compatible Timing	70 ns access and cycle times meet standard microprocessor bus timing with no glue logic required

Applications

Industrial Data Logger	Medical Device Memory Backup
Use Scenario: Continuous acquisition of sensor readings in programmable logic controllers during mains failure. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time process variables; retains last valid state during 100+ ms brownouts. Use Value: Eliminates need for external EEPROM write cycles or battery-backed RTC modules, reducing BOM count and firmware complexity.	Use Scenario: Preserving patient therapy parameters and error logs in infusion pumps during AC power interruption. IC Role / Device Role / Timing Role: Fail-safe memory holding critical configuration and event history; activated automatically upon V_CC sag. Use Value: Meets IEC 62304 Class C software safety requirements by guaranteeing data integrity without host intervention.
Telecom Line Card Buffer	Avionics Configuration Store
Use Scenario: Storing port status and provisioning tables in carrier-grade DSLAM line cards subject to frequent hot-swap events. IC Role / Device Role / Timing Role: High-speed SRAM interface with microcontroller; provides seamless transition between main and backup power domains. Use Value: Enables sub-10 µs switchover latency and zero-data-loss operation during field-replaceable unit insertion/removal.	Use Scenario: Holding flight control calibration constants and fault history in airborne navigation units certified to DO-254 Level A. IC Role / Device Role / Timing Role: Radiation-tolerant nonvolatile memory used in redundant computing channels; retains data across full aircraft power-down cycles. Use Value: Reduces qualification burden versus flash-based alternatives by avoiding erase-cycle wear and write-time variability.

Industrial Data Logger

Medical Device Memory Backup

Use Scenario: Continuous acquisition of sensor readings in programmable logic controllers during mains failure.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time process variables; retains last valid state during 100+ ms brownouts.

Use Value: Eliminates need for external EEPROM write cycles or battery-backed RTC modules, reducing BOM count and firmware complexity.

Use Scenario: Preserving patient therapy parameters and error logs in infusion pumps during AC power interruption.

IC Role / Device Role / Timing Role: Fail-safe memory holding critical configuration and event history; activated automatically upon V_CC sag.

Use Value: Meets IEC 62304 Class C software safety requirements by guaranteeing data integrity without host intervention.

Telecom Line Card Buffer

Avionics Configuration Store

Use Scenario: Storing port status and provisioning tables in carrier-grade DSLAM line cards subject to frequent hot-swap events.

IC Role / Device Role / Timing Role: High-speed SRAM interface with microcontroller; provides seamless transition between main and backup power domains.

Use Value: Enables sub-10 µs switchover latency and zero-data-loss operation during field-replaceable unit insertion/removal.

Use Scenario: Holding flight control calibration constants and fault history in airborne navigation units certified to DO-254 Level A.

IC Role / Device Role / Timing Role: Radiation-tolerant nonvolatile memory used in redundant computing channels; retains data across full aircraft power-down cycles.

Use Value: Reduces qualification burden versus flash-based alternatives by avoiding erase-cycle wear and write-time variability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1270AB-70#	Narrower V_CC tolerance (±5%, 4.75–5.25V); higher write-protection threshold (4.50V min)	Better suited for tightly regulated 5V systems where brownout margin is smaller	Select DS1270AB-70# when board-level regulation ensures stable 5V ±5%; DS1270Y-100 preferred for unregulated or wide-input supplies
STK16C85-70I	Same density and 70 ns speed but uses external battery; no integrated freshness seal or automatic V_CC monitoring	Requires external diode-OR and battery management; lacks autonomous power-fail response	Choose STK16C85-70I only when existing design already includes discrete backup circuitry and cost sensitivity outweighs integration benefits

Compared with DS1270AB-70#, DS1270Y-100 trades tighter supply regulation for broader operational margin and lower system-level component count; versus STK16C85-70I, it delivers true plug-and-play nonvolatility with zero external support components and guaranteed 5-year retention from first power-on.

Availability

DS1270Y-100 is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, and telecom line card buffers requiring stable component supply with long-term lifecycle assurance.

Supply support for DS1270Y-100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a U.S.-based semiconductor company specializing in precision analog, mixed-signal, and high-reliability ICs for industrial, medical, and communications markets.

The DS1270Y-100 belongs to Maxim's nonvolatile SRAM product line, engineered to replace battery-backed SRAM modules with fully integrated lithium power management and autonomous fail-safe operation for mission-critical memory retention.

FAQ

What is the guaranteed data retention period for DS1270Y-100 when powered off?

The DS1270Y-100 guarantees a minimum of 5 years of data retention in the absence of external power, measured from the time V_CC is first applied above 4.25V. This specification is assured by component selection, process control, and design-not production-tested per unit-and assumes proper PCB layout and thermal environment per Maxim's application notes.

Does DS1270Y-100 require external circuitry to manage its lithium battery?

No, DS1270Y-100 requires no external circuitry for lithium battery management. It integrates a power-switching circuit, V_CC monitor, and freshness seal that autonomously connects the lithium cell only during power loss and disconnects it during normal operation. External diodes, regulators, or charge controllers are unnecessary.

What is the difference between DS1270Y-100 and DS1270AB-70# in terms of supply voltage operation?

DS1270Y-100 operates over 4.5V–5.5V (±10%), while DS1270AB-70# requires 4.75V–5.25V (±5%). The DS1270Y-100's wider tolerance allows use with unregulated or aging power supplies, whereas DS1270AB-70# suits tightly regulated 5V systems. Both share identical pinout, timing, and nonvolatile functionality.

Can DS1270Y-100 be used in industrial temperature environments?

The DS1270Y-100 is specified for 0°C to +70°C (Commercial grade). For industrial temperature range (-40°C to +85°C), the correct variant is DS1270Y-70IND#, which shares all electrical and functional characteristics of DS1270Y-100 but is screened and qualified across the extended range.

How does DS1270Y-100 prevent data corruption during power failure?

DS1270Y-100 prevents data corruption by continuously monitoring V_CC; when voltage falls below ~3.0V, it instantly switches to lithium backup, disables all inputs (making them don't-care), places outputs in high-impedance, and unconditionally enables write protection-ensuring no partial writes occur during brownout conditions.

DS1270Y-100 Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 36-DIP Module (0.610", 15.49mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 16Mbit

Memory Organization:: 2M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 100ns

Access Time:: 100 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 36-EDIP

DS1270Y-100 FAQ

1.How can I place an order for DS1270Y-100 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1270Y-100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1270Y-100 reliable?

The price and inventory of DS1270Y-100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1270Y-100 is usually 5 days.

3.What payment methods are accepted for DS1270Y-100?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1270Y-100 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1270Y-100?

DS1270Y-100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1270Y-100 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1270Y-100?

For technical support, including DS1270Y-100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1270Y-100 requirements.

6.How does Aetrix verify that DS1270Y-100 is sourced from the original manufacturer or authorized distributors?

All DS1270Y-100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1270Y-100 meets industry standards.

7.What is the process for return or replacement of DS1270Y-100?

All DS1270Y-100 units undergo pre-shipment inspection (PSI). If there is an issue with DS1270Y-100, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1270Y-100 part is unused and in its original packaging.

Return procedure for DS1270Y-100:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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