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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1270Y-70

Name: DS1270Y-70
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1270Y-70
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1270Y-70

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 36-DIP Module (0.610", 15.49mm)

Datasheet:: DS1270Y-70.pdf

Description:: IC NVSRAM 16MBIT PARALLEL 36EDIP

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Inventory:2,583

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Product details

Overview

DS1270Y-70 from Maxim Integrated is a 16 Mbit (2,097,152 × 8) nonvolatile static RAM with integrated lithium battery backup, ±10% V_CC tolerance (4.5V–5.5V), 70 ns access time, and industrial-grade temperature support (-40°C to +85°C) in a 36-pin 740-mil extended DIP package. It autonomously switches to battery power below ~3.0 V to preserve data without external circuitry.

For engineers reviewing the DS1270Y-70 datasheet, DS1270Y-70 pinout, DS1270Y-70 application, or DS1270Y-70 equivalent, key selection criteria include guaranteed 5-year data retention during power loss, unlimited write cycles, automatic write protection at V_TP = 4.25–4.5 V, CMOS-compatible timing, and full industrial temperature operation.

Technical Context

The DS1270Y-70 implements a self-monitoring power-fail detection circuit that triggers lithium source activation when V_CC drops below ~3.0 V and enforces unconditional write protection when V_CC falls below its specified V_TP (4.25–4.5 V). All address (A0–A20) and data (DQ0–DQ7) lines remain functional during normal operation, with CE/WE/OE controlling read/write state transitions.

Its architecture eliminates need for external backup controllers or capacitors: the internal switch disconnects the lithium cell until first V_CC application, preserving shelf life. During power-up, the device reverts to V_CC supply above ~3.0 V and resumes full SRAM functionality once V_CC exceeds 4.5 V.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	16,777,216-bit (2,097,152 × 8) - supports byte-wide microprocessor interfaces without address decoding overhead
Access Time	70 ns - enables direct connection to 14 MHz bus systems with no wait states
V_CC Range	4.5 V to 5.5 V (±10%) - tolerates wide input variation in industrial power rails
Data Retention	5 years minimum without external power - verified by component-level design and process control, not production-tested per unit
Write Protection Threshold	V_TP = 4.25–4.5 V - initiates automatic lockout before critical logic levels degrade
Operating Temperature	-40°C to +85°C (IND grade) - qualified for embedded control and telemetry systems in harsh environments
Standby Current	100–250 µA (CE = V_CC−0.5 V) - enables low-power monitoring modes in battery-backed systems

Pinout & Package

DS1270Y-70 is housed in a 36-pin 740-mil Extended Dual In-line Package (EDIP), RoHS-compliant (suffix #), wave- or hand-solderable only. Pin 1 is marked with a notch or dot; NC pins are internally unconnected and must remain floating.

Pin/Terminal	Circuit Role	Design Meaning
A0–A20	Address Inputs	21-bit address bus supporting full 2-Mbyte addressing; all must be stable during read/write setup
DQ0–DQ7	Data I/O	Bidirectional 8-bit data bus; high-impedance when CE or OE inactive; bus contention avoided via OE/WE coordination
CE	Chip Enable	Active-low chip select; falling edge initiates cycle; rising edge terminates write if earlier than WE
WE	Write Enable	Active-low write strobe; falling edge defines write start; rising edge defines write end if earlier than CE
OE	Output Enable	Active-low output control; must be high during writes to prevent bus contention
V_CC	Power Supply	+5 V ±10%; powers logic and RAM core; switching circuit connects lithium source when V_CC < ~3.0 V
GND	Ground	Reference return path for all signals and power; must be low-impedance to avoid noise-induced corruption
NC	No Connect	Two pins (12 and 24) are unconnected; must not be soldered or tied to any net

Key Features

Feature	Design Value
Automatic Power-Fail Response	Switches to lithium backup within 1.5 µs of V_CC failure detection, ensuring zero-cycle data loss
Freshness Seal	Lithium cell electrically disconnected until first V_CC application > V_TP, preserving full energy capacity for 10+ years shelf life
Unlimited Write Cycles	No endurance limit on SRAM core - eliminates wear-leveling firmware and write-count tracking
Self-Contained Backup	Zero external components required for nonvolatility - reduces BOM count, PCB area, and qualification effort
Industrial Voltage Tolerance	Operates across full 4.5–5.5 V range while maintaining 70 ns timing - simplifies power supply design in variable-rail systems

Applications

Industrial Data Logger	Medical Device Configuration Storage
Use Scenario: Continuous environmental monitoring in remote substations with intermittent AC power and frequent brownouts. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time sensor readings and calibration tables between power cycles. Use Value: Guarantees 5-year data integrity without supercapacitors or external battery management, reducing field maintenance.	Use Scenario: Storing patient-specific therapy parameters and usage logs in portable infusion pumps. IC Role / Device Role / Timing Role: Battery-backed memory retaining critical configuration even during battery replacement or charging interruptions. Use Value: Eliminates risk of parameter loss during power transitions, meeting IEC 62304 safety requirements for Class C software.
Avionics Black Box Recorder	Programmable Logic Controller (PLC) State Memory
Use Scenario: Crash-protected flight data recording where power may fail abruptly during impact or fire. IC Role / Device Role / Timing Role: Primary volatile memory with instantaneous lithium switchover upon V_CC collapse. Use Value: Meets DO-160 Section 22 crash survivability by writing final state within 1.5 µs of power loss detection.	Use Scenario: Retaining ladder logic execution state and I/O mapping during factory line power resets. IC Role / Device Role / Timing Role: Nonvolatile work RAM enabling seamless resume after unexpected mains interruption. Use Value: Prevents machine downtime and product scrap by avoiding PLC reboot and reinitialization sequences.

Industrial Data Logger

Medical Device Configuration Storage

Use Scenario: Continuous environmental monitoring in remote substations with intermittent AC power and frequent brownouts.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time sensor readings and calibration tables between power cycles.

Use Value: Guarantees 5-year data integrity without supercapacitors or external battery management, reducing field maintenance.

Use Scenario: Storing patient-specific therapy parameters and usage logs in portable infusion pumps.

IC Role / Device Role / Timing Role: Battery-backed memory retaining critical configuration even during battery replacement or charging interruptions.

Use Value: Eliminates risk of parameter loss during power transitions, meeting IEC 62304 safety requirements for Class C software.

Avionics Black Box Recorder

Programmable Logic Controller (PLC) State Memory

Use Scenario: Crash-protected flight data recording where power may fail abruptly during impact or fire.

IC Role / Device Role / Timing Role: Primary volatile memory with instantaneous lithium switchover upon V_CC collapse.

Use Value: Meets DO-160 Section 22 crash survivability by writing final state within 1.5 µs of power loss detection.

Use Scenario: Retaining ladder logic execution state and I/O mapping during factory line power resets.

IC Role / Device Role / Timing Role: Nonvolatile work RAM enabling seamless resume after unexpected mains interruption.

Use Value: Prevents machine downtime and product scrap by avoiding PLC reboot and reinitialization sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1270AB-70IND#	Narrower V_CC tolerance (±5%, 4.75–5.25 V); higher V_TP (4.5–4.75 V); identical pinout, speed, and package	Better suited for stable 5 V regulated supplies; less tolerant of voltage sag during brownouts	Select DS1270AB-70IND# only if system V_CC remains within ±5% and brownout duration is short
STK16C88-70I	Same density and 70 ns speed, but uses external capacitor backup; no integrated lithium; requires external controller for power-fail detection	Higher BOM cost and board space; longer qualification path due to external analog circuitry	Choose STK16C88-70I only if lithium-free compliance (e.g., aviation transport) overrides reliability and integration benefits

Compared with DS1270AB-70IND#, DS1270Y-70 offers wider voltage margin for brownout resilience; compared with STK16C88-70I, it delivers true single-chip nonvolatility without external components or timing-critical controller firmware.

Availability

DS1270Y-70 is available at Aetrix Electronics and suitable for industrial data loggers, medical device configuration storage, and avionics black box recorders requiring stable component supply with guaranteed long-term data retention and industrial temperature performance.

Supply support for DS1270Y-70 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in precision analog, mixed-signal, and high-reliability ICs for industrial, medical, and automotive applications.

The DS1270Y-70 belongs to Maxim's nonvolatile SRAM product line, designed specifically for systems needing instant, autonomous, and maintenance-free data retention during unpredictable power failures.

FAQ

What is the guaranteed data retention period for DS1270Y-70 when external power is removed?

The DS1270Y-70 guarantees a minimum of 5 years of data retention in the absence of external power, based on component selection, process control, and design assurance-not per-unit production testing. This retention begins from the moment V_CC is first applied and the lithium cell is activated; the DS1270Y-70 freshness seal ensures full battery capacity is preserved until initial power-on.

Does DS1270Y-70 require external circuitry to enable nonvolatile operation?

No, the DS1270Y-70 requires no external components for nonvolatile operation. Its integrated lithium energy source and power-fail detection circuitry automatically switch to battery backup when V_CC drops below ~3.0 V and enforce write protection below V_TP (4.25–4.5 V). The DS1270Y-70 functions as a drop-in replacement for standard SRAMs without modifying existing address/data/control routing.

How does the DS1270Y-70 handle simultaneous CE and WE transitions during a write cycle?

When CE and WE fall simultaneously or near-simultaneously, the DS1270Y-70 defines the write start using the later transition and ends the cycle at the earlier rising edge. If CE rises before or with WE, outputs remain high-impedance; if WE rises before or with CE, outputs disable after tODW (25 ns). These behaviors ensure deterministic bus behavior and prevent metastability-critical for reliable operation in the DS1270Y-70.

What is the meaning of "IND" in DS1270Y-70IND# and how does it affect DS1270Y-70 specifications?

The "IND" suffix in DS1270Y-70IND# denotes qualification for the industrial temperature range (-40°C to +85°C), which applies to all DC and AC electrical characteristics including 70 ns access time, V_TP, and standby current. The DS1270Y-70IND# variant is fully tested across this range; the base DS1270Y-70# (without IND) is rated only for 0°C to +70°C and must not be used in extended-temperature applications.

Can DS1270Y-70 be used in systems requiring UL recognition?

Yes, DS1270Y-70 modules are recognized by Underwriters Laboratories under file E99151. This UL recognition covers the entire nonvolatile SRAM module-including the integrated lithium cell, switching circuitry, and encapsulation-supporting compliance efforts for end equipment in industrial and medical markets where third-party safety certification is mandatory. The DS1270Y-70 maintains this recognition across both commercial and IND temperature grades.

DS1270Y-70 Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 36-DIP Module (0.610", 15.49mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 16Mbit

Memory Organization:: 2M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 36-EDIP

DS1270Y-70 FAQ

1.How can I place an order for DS1270Y-70 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1270Y-70 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1270Y-70 reliable?

The price and inventory of DS1270Y-70 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1270Y-70 is usually 5 days.

3.What payment methods are accepted for DS1270Y-70?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1270Y-70 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1270Y-70?

DS1270Y-70 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1270Y-70 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1270Y-70?

For technical support, including DS1270Y-70 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1270Y-70 requirements.

6.How does Aetrix verify that DS1270Y-70 is sourced from the original manufacturer or authorized distributors?

All DS1270Y-70 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1270Y-70 meets industry standards.

7.What is the process for return or replacement of DS1270Y-70?

All DS1270Y-70 units undergo pre-shipment inspection (PSI). If there is an issue with DS1270Y-70, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1270Y-70 part is unused and in its original packaging.

Return procedure for DS1270Y-70:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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