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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1270Y-70IND

Name: DS1270Y-70IND
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1270Y-70IND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1270Y-70IND

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 36-DIP Module (0.610", 15.49mm)

Datasheet:: DS1270Y-70IND.pdf

Description:: IC NVSRAM 16MBIT PARALLEL 36EDIP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DS1270Y-70IND from Maxim Integrated is a 16 Mbit (2,097,152 × 8) nonvolatile static RAM with lithium battery backup, 70 ns access time, ±10% V_CC tolerance (4.5 V to 5.5 V), and industrial temperature operation (–40°C to +85°C). It autonomously switches to battery power below ~3.0 V, enabling data retention without external circuitry in embedded instrumentation and legacy industrial controllers.

For engineers reviewing the DS1270Y-70IND datasheet, DS1270Y-70IND pinout, DS1270Y-70IND application, or DS1270Y-70IND equivalent, key selection factors include guaranteed 5-year data retention, unlimited write cycles, automatic write protection during brownout, full V_CC monitoring, and compatibility with standard SRAM bus timing.

Technical Context

The DS1270Y-70IND integrates a self-contained lithium energy source and voltage-monitoring circuitry that triggers unconditional write protection when V_CC falls below 4.25 V (V_TP min), then connects the battery at ~3.0 V to sustain memory contents. Its control logic enforces strict input synchronization: read requires CE and OE low with WE high; write requires CE and WE low with OE high.

It operates as a drop-in replacement for volatile SRAMs in microprocessor systems-no external support ICs needed-while maintaining full TTL-compatible signaling (VIH ≥ 2.2 V, VIL ≤ 0.8 V), 20 pF–40 pF I/O capacitance, and 100 µA typical standby current (CE = V_CC–0.5 V).

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	16,777,216 bits (2,097,152 × 8) - supports byte-wide parallel interfaces without address multiplexing
Access Time	70 ns - enables direct interfacing with 14 MHz microprocessors without wait states
V_CC Range	4.5 V to 5.5 V (±10%) - accommodates wide-tolerance power supplies common in industrial PLCs
Data Retention	≥5 years without power - verified by component-level design and process control, not production-tested per unit
Write Protection Threshold	4.25 V to 4.5 V (V_TP) - initiates automatic lockout before system-level reset thresholds are breached
Operating Temperature	–40°C to +85°C - qualified for uncontrolled environments including factory floors and outdoor enclosures
Standby Current	100 µA max (CE = V_CC–0.5 V) - minimizes parasitic drain during extended power-loss events

Pinout & Package

DS1270Y-70IND uses a 36-pin 740-mil Extended Dual In-line Package (EDIP), RoHS-compliant, wave- or hand-solderable only. Pin 1 is A18; pin 36 is GND. NC pins (13, 24) must remain unconnected.

Pin/Terminal	Circuit Role	Design Meaning
A0–A20	Address Inputs	21-bit address bus supporting full 2-Mbyte addressing space; all must be stable during read/write setup
DQ0–DQ7	Bidirectional Data Bus	CMOS-compatible 8-bit I/O; high-impedance when CE or OE inactive; no bus contention during write if OE held high
CE	Chip Enable	Active-low global select; falling edge synchronizes with WE to define write start; rising edge terminates cycle
WE	Write Enable	Active-low write strobe; output drivers disabled within 25 ns of falling edge (tODW)
OE	Output Enable	Active-low output control; determines tOE (35 ns) and tCOE (5 ns) timing; must be high during writes
V_CC	Power Supply	+5 V supply with ±10% tolerance; powers logic and enables lithium switch-on at first power-up
GND	Ground Reference	Signal and power return; must be low-impedance to prevent noise-induced false V_CC fault detection
NC	No Connect	Pins 13 (A15) and 24 (NC) are unused; must not be tied to any net

Key Features

Feature	Design Value
Automatic Power-Fail Response	Switches to lithium backup in ≤1.5 µs (t_PD) upon V_CC decay below V_TP, eliminating need for external supervisor ICs
Freshness Seal	Lithium source remains electrically disconnected until first V_CC application > V_TP, preserving full 5-year retention capacity
Unlimited Write Cycles	No endurance wear-out mechanism - supports continuous logging or configuration updates without degradation
Full V_CC Monitoring	Continuous real-time sensing ensures write protection activates before system reset ICs trigger, preventing partial writes
TTL-Compatible Timing	70 ns t_ACC, 35 ns t_OE, and 5 ns t_COE align with legacy 80Cxx/8051/68K bus protocols without glue logic

Applications

Industrial Data Logger	Medical Device Configuration Store
Use Scenario: Standalone environmental sensor node recording temperature/humidity every 10 seconds, operating on intermittent AC power with frequent outages. IC Role / Device Role / Timing Role: Nonvolatile SRAM holding last 10,000 readings; retains data across multi-day blackouts without supercapacitor or backup regulator. Use Value: Eliminates firmware complexity for wear-leveling or flash translation layers while guaranteeing atomic write integrity during sudden V_CC collapse.	Use Scenario: Portable ultrasound machine storing user calibration profiles, transducer settings, and service logs between clinical sessions. IC Role / Device Role / Timing Role: Byte-addressable configuration memory accessed via 8-bit microcontroller bus; survives battery swaps and 10-second power interruptions. Use Value: Prevents loss of FDA-required device history and eliminates re-calibration delays after power restoration.
Legacy CNC Machine Controller	Avionics Black Box Memory
Use Scenario: Retrofitting 1990s programmable logic controller with modern diagnostics while retaining original PCB layout and CPU. IC Role / Device Role / Timing Role: Pin-compatible SRAM replacement for obsolete 2-Mbyte volatile RAM; maintains identical 70 ns timing and address/data bus loading. Use Value: Enables field-upgrade of firmware logging capability without redesigning timing-critical control loops or changing clock domains.	Use Scenario: Crash-survivable flight data recorder requiring tamper-proof, long-term memory retention independent of aircraft power bus. IC Role / Device Role / Timing Role: Primary nonvolatile storage for 24-hour parametric telemetry; powered solely by internal lithium during crash-induced power loss. Use Value: Meets DO-160 Section 22 crash survivability requirements by sustaining memory state through 100 g shock and fire exposure.

Industrial Data Logger

Medical Device Configuration Store

Use Scenario: Standalone environmental sensor node recording temperature/humidity every 10 seconds, operating on intermittent AC power with frequent outages.

IC Role / Device Role / Timing Role: Nonvolatile SRAM holding last 10,000 readings; retains data across multi-day blackouts without supercapacitor or backup regulator.

Use Value: Eliminates firmware complexity for wear-leveling or flash translation layers while guaranteeing atomic write integrity during sudden V_CC collapse.

Use Scenario: Portable ultrasound machine storing user calibration profiles, transducer settings, and service logs between clinical sessions.

IC Role / Device Role / Timing Role: Byte-addressable configuration memory accessed via 8-bit microcontroller bus; survives battery swaps and 10-second power interruptions.

Use Value: Prevents loss of FDA-required device history and eliminates re-calibration delays after power restoration.

Legacy CNC Machine Controller

Avionics Black Box Memory

Use Scenario: Retrofitting 1990s programmable logic controller with modern diagnostics while retaining original PCB layout and CPU.

IC Role / Device Role / Timing Role: Pin-compatible SRAM replacement for obsolete 2-Mbyte volatile RAM; maintains identical 70 ns timing and address/data bus loading.

Use Value: Enables field-upgrade of firmware logging capability without redesigning timing-critical control loops or changing clock domains.

Use Scenario: Crash-survivable flight data recorder requiring tamper-proof, long-term memory retention independent of aircraft power bus.

IC Role / Device Role / Timing Role: Primary nonvolatile storage for 24-hour parametric telemetry; powered solely by internal lithium during crash-induced power loss.

Use Value: Meets DO-160 Section 22 crash survivability requirements by sustaining memory state through 100 g shock and fire exposure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1270AB-70IND	Narrower V_CC range (4.75–5.25 V); higher V_TP (4.50–4.75 V); same package/timing	Better suited for regulated 5 V systems where tighter supply tolerance is guaranteed	Select DS1270AB-70IND if board-level regulation holds V_CC within ±5%; otherwise DS1270Y-70IND provides wider margin
STK16C88-70I	Same density/timing but uses external battery; no integrated lithium switch; requires external V_CC monitor	Requires additional components (supervisor IC, diode, capacitor) and PCB area	Choose STK16C88-70I only if lithium integration is prohibited by safety certification or if battery replacement is required in-field

Compared with DS1270AB-70IND and STK16C88-70I, the DS1270Y-70IND delivers superior system-level simplicity: its integrated battery management eliminates external components, while its ±10% V_CC tolerance reduces dependency on precision regulators in cost-sensitive industrial designs.

Availability

DS1270Y-70IND is available at Aetrix Electronics and suitable for industrial data loggers, medical device configuration stores, and legacy CNC machine controllers requiring stable component supply, long-lifecycle support, and guaranteed nonvolatile memory performance under brownout conditions.

Supply support for DS1270Y-70IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs for industrial, automotive, and communications markets.

The DS1270Y-70IND belongs to Maxim's nonvolatile SRAM product line, engineered specifically for mission-critical applications where data integrity must survive uncontrolled power loss without external supervision or firmware intervention.

FAQ

What is the guaranteed data retention period for DS1270Y-70IND?

The DS1270Y-70IND guarantees ≥5 years of data retention in the absence of external power, starting from the moment V_CC is first applied. This specification is assured by component selection, process control, and design-not measured per unit-and assumes the lithium energy source remains undischarged prior to initial use.

Does DS1270Y-70IND require external circuitry to manage battery backup?

No, the DS1270Y-70IND contains fully integrated lithium battery switching and voltage monitoring circuitry. It automatically disconnects the lithium source until first power-up, then monitors V_CC continuously and switches to battery power below ~3.0 V-no external supervisor IC, diodes, or capacitors are needed for basic nonvolatile operation.

How does DS1270Y-70IND handle write operations during power failure?

When V_CC drops below the write-protection threshold (4.25 V to 4.5 V), the DS1270Y-70IND unconditionally disables write capability, places all inputs in "don't care" state, and forces outputs to high-impedance. This prevents partial or corrupted writes during brownout, ensuring data integrity without software intervention.

Is DS1270Y-70IND pin-compatible with standard 36-pin SRAMs?

Yes, the DS1270Y-70IND uses a standard 36-pin 740-mil EDIP footprint with identical pin assignments (A0–A20, DQ0–DQ7, CE, WE, OE, V_CC, GND) as industry-standard 2-Mbyte SRAMs. No PCB layout changes are required for drop-in replacement-only ensure V_CC tolerance and temperature range match system requirements.

What is the maximum operating current of DS1270Y-70IND during active read/write cycles?

The DS1270Y-70IND draws up to 85 mA of operating current (I_CCO1) during active read or write cycles at V_CC = 5 V. This value reflects worst-case dynamic current under full bus activity and is specified across the full industrial temperature range (–40°C to +85°C).

DS1270Y-70IND Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 36-DIP Module (0.610", 15.49mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 16Mbit

Memory Organization:: 2M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 36-EDIP

DS1270Y-70IND FAQ

1.How can I place an order for DS1270Y-70IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1270Y-70IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1270Y-70IND reliable?

The price and inventory of DS1270Y-70IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1270Y-70IND is usually 5 days.

3.What payment methods are accepted for DS1270Y-70IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1270Y-70IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1270Y-70IND?

DS1270Y-70IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1270Y-70IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1270Y-70IND?

For technical support, including DS1270Y-70IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1270Y-70IND requirements.

6.How does Aetrix verify that DS1270Y-70IND is sourced from the original manufacturer or authorized distributors?

All DS1270Y-70IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1270Y-70IND meets industry standards.

7.What is the process for return or replacement of DS1270Y-70IND?

All DS1270Y-70IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1270Y-70IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1270Y-70IND part is unused and in its original packaging.

Return procedure for DS1270Y-70IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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