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Analog Devices Inc./Maxim Integrated DS1350ABP-70IND
- Part No.:
- DS1350ABP-70IND
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 34-PowerCap™ Module
- Datasheet:
-
DS1350ABP-70IND.pdf
- Description:
- IC NVSRAM 4MBIT PAR 34PWRCAP
- Quantity:
- Payment:
- Shipping:
Inventory:4,986
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Product details
Overview
DS1350ABP-70IND from Maxim Integrated is a 4,194,304-bit (524,288 × 8) nonvolatile SRAM with integrated lithium backup, ±5% VCC tolerance (4.75V–5.25V), 70ns access time, and industrial temperature rating (–40°C to +85°C). It provides automatic write protection during power loss, battery monitoring, and reset signaling for embedded data logging systems requiring persistent memory without external support circuitry.
For engineers reviewing the DS1350ABP-70IND datasheet, DS1350ABP-70IND pinout, DS1350ABP-70IND application, or DS1350ABP-70IND equivalent, key selection criteria include its PowerCap Module (PCM) package compatibility with DS9034PC+, open-drain RST/BW outputs, guaranteed 10-year data retention, and self-contained power-fail detection logic that eliminates need for external supervisors or backup controllers.
Technical Context
The DS1350ABP-70IND integrates static RAM, lithium battery switching circuitry, VCC monitor, battery voltage tester, and open-drain RST/BW outputs in a single 34-pin PCM package. Its power-fail response triggers write protection at VTP = 4.50–4.75V and connects the lithium source below ~2.7V, ensuring data integrity without host intervention.
It operates in three distinct modes: normal read/write (VCC ≥ 4.75V), data retention (VCC < 2.7V), and transitional protection (2.7V ≤ VCC < 4.75V). Battery monitoring executes daily via 1-second 1MΩ load test; BW asserts if voltage drops below 2.6V and remains active until replacement or recovery confirmation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4,194,304 bits (524,288 × 8) - supports byte-wide interface with full addressability across 19 address lines (A0–A18) |
| Access Time | 70 ns - enables direct replacement of standard 512k×8 SRAMs in legacy 70ns timing-critical designs |
| VCC Operating Range | 4.75V to 5.25V (±5%) - ensures stable operation across industrial-grade 5V rails with minimal regulation overhead |
| Data Retention | 10 years minimum without external power - achieved via sealed lithium cell and zero-battery-leakage activation on first power-up |
| Temperature Range | –40°C to +85°C - qualified for industrial control, transportation, and outdoor telemetry applications |
| Standby Current | 50 µA typical - reduces system-level quiescent power in battery-backed sleep states |
| Write Endurance | Unlimited - no wear-out mechanism as write cycles do not degrade nonvolatile storage |
Pinout & Package
DS1350ABP-70IND uses a 34-pin PowerCap Module (PCM) package - a surface-mountable module designed for reflow soldering prior to snap-on attachment of DS9034PC+ or DS9034PCI+ PowerCap. The PCM includes dedicated battery contacts and standardized pinout shared across Maxim's NV SRAM family.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0 – A18 | Address Inputs | 19-bit address bus supporting full 524,288-word decoding; compatible with standard microcontroller/microprocessor address buses |
| DQ0 – DQ7 | Data I/O | Bi-directional 8-bit data bus with high-impedance tri-state control via CE/OE; matches industry-standard SRAM data interface |
| CE | Chip Enable | Active-low chip select enabling memory access only when asserted; controls standby current draw (ICCS2 = 50 µA) |
| WE | Write Enable | Active-low write strobe; initiates write cycle on falling edge concurrent with CE; disables outputs when OE is active |
| OE | Output Enable | Active-low output enable controlling DQ drivers; must be high during writes to prevent bus contention |
| RST | Reset Output | Open-drain output asserting during VCC ramp-up (200ms nominal) and power failure; requires external pull-up for system reset generation |
| BW | Battery Warning | Open-drain output asserting when internal Li battery voltage falls below 2.6V after daily 1s test; remains active until verified recovery |
| VCC | Power Supply | +5V supply input with ±5% tolerance; powers SRAM core and monitoring circuitry; triggers write protection at 4.50–4.75V |
| GND | Ground | Reference return path for all digital and analog functions; two GND pins (pins 16 and 34) reduce ground bounce in high-speed access |
Key Features
| Feature | Design Value |
|---|---|
| Self-contained lithium backup | Lithium cell electrically disconnected until first VCC application - preserves shelf life and guarantees >10-year retention from power-on date |
| Automatic power-fail protection | Hardware-level write protection triggered at VTP (4.50–4.75V); inputs become "don't care" and outputs go high-Z within 1.5µs of VCC decay |
| Daily battery health check | Automated 1-second 1MΩ load test every 24 hours post-VCC rise; BW assertion indicates end-of-life or marginal battery condition |
| Integrated system supervisor | RST output holds processor in reset for 200ms on power-up and asserts during VCC failure - replaces discrete reset ICs in compact designs |
| Standardized PCM pinout | 34-pin footprint compatible across Maxim's NV SRAM family - simplifies BOM consolidation and design reuse for 512k×8 to 4M×8 upgrades |
Applications
| Industrial Data Logger | Medical Device Memory Backup |
|---|---|
|
Use Scenario: Continuous acquisition of sensor readings in programmable logic controllers with infrequent power cycles and long field deployment. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing configuration, calibration tables, and last-known operational state during mains outage. Use Value: Eliminates need for EEPROM write endurance management or Flash erase latency; retains data for ≥10 years without refresh or external battery management. |
Use Scenario: Patient parameter history storage in portable diagnostic equipment where power interruptions occur during battery swaps or charging. IC Role / Device Role / Timing Role: Fail-safe memory buffer preserving critical waveform snapshots and alarm logs during transient brownouts. Use Value: Guarantees sub-millisecond write protection activation and zero-data-loss retention - meeting IEC 62304 Class C software safety requirements. |
| Telecom Base Station Control | Avionics Configuration Storage |
|
Use Scenario: Storing FPGA configuration bitstreams and real-time network settings in remote radio units exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: Industrial-temperature NV SRAM interfacing directly with ARM-based baseband processors via parallel bus. Use Value: Delivers 70ns access time across –40°C to +85°C without derating, while RST output synchronizes firmware initialization with power stabilization. |
Use Scenario: Retaining flight control parameters and maintenance logs in airborne computing modules subject to DO-160 environmental stress testing. IC Role / Device Role / Timing Role: UL-recognized (E99151) nonvolatile memory providing deterministic data hold during rapid power cycling and EMI events. Use Value: Meets RTCA/DO-160 Section 22 lightning-induced transient immunity via hardware-level write lockout and battery isolation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1350YP-70IND+ | Wider VCC tolerance (±10%, 4.5V–5.5V); lower write-protection threshold (4.25–4.5V); identical pinout, timing, and PCM packaging | Better suited for unregulated 5V supplies with higher ripple or aging power supplies where tighter VCC regulation is impractical | Select DS1350YP-70IND+ when system VCC variation exceeds ±5%; otherwise DS1350ABP-70IND offers tighter voltage margin for precision rail designs. |
| STK13C68-J15F | 4Mbit NV SRAM in 32-pin SOIC; 150ns access time; no integrated battery monitor or RST output; requires external supervisor | Lacks autonomous power-fail signaling and daily battery diagnostics - increases system component count and firmware complexity | Choose STK13C68-J15F only when board space constraints prohibit PCM height or when legacy SOIC footprint must be retained. |
Compared with DS1350YP-70IND+, the DS1350ABP-70IND provides stricter VCC regulation tolerance ideal for stable 5V rails, while STK13C68-J15F trades integrated supervision for smaller footprint but demands external reset and battery monitoring circuitry.
Availability
DS1350ABP-70IND is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, and telecom base station control requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for DS1350ABP-70IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications applications.
The DS1350ABP-70IND belongs to Maxim's nonvolatile SRAM product line, engineered to replace battery-backed SRAM modules with integrated power-fail protection, battery monitoring, and system reset functionality in space-constrained industrial systems.
FAQ
What is the guaranteed data retention period for DS1350ABP-70IND?
The DS1350ABP-70IND guarantees a minimum 10-year data retention period in the absence of external power. This specification is assured by component selection, process control, and design - beginning from the time VCC is first applied by the user. The lithium cell remains electrically disconnected until initial power-up, preserving shelf life and ensuring the full 10-year window starts only upon deployment.
Does DS1350ABP-70IND require an external PowerCap, and which one?
Yes, DS1350ABP-70IND requires a separate DS9034PC+ or DS9034PCI+ PowerCap to form a complete nonvolatile SRAM module. The DS1350ABP-70IND is the PowerCap Module (PCM) base unit containing the SRAM and control circuitry; the PowerCap snaps onto it post-reflow and provides the lithium battery. Both components are ordered separately and shipped in distinct containers.
How does the battery monitoring function work in DS1350ABP-70IND?
The DS1350ABP-70IND performs automated battery voltage testing once every 24 hours, starting within tREC (125ms) after VCC rises above VTP. During each test, the internal 1MΩ resistor loads the battery for 1 second. If voltage falls below 2.6V, the BW pin asserts and remains active until the next successful test confirms recovery. BW is an open-drain output requiring an external pull-up resistor.
What is the role of the RST pin on DS1350ABP-70IND?
The RST pin on DS1350ABP-70IND is an open-drain output that holds the host processor in reset for 200ms (nominal) during power-up to prevent operation during transients, and asserts again during VCC failure to signal impending power loss. It sinks up to 10mA and requires an external pull-up resistor. RST activation is hardware-controlled and independent of firmware, ensuring deterministic reset behavior.
Can DS1350ABP-70IND operate across the full industrial temperature range?
Yes, DS1350ABP-70IND is fully specified and tested for continuous operation from –40°C to +85°C. All DC and AC electrical characteristics - including 70ns access time, 50µA standby current, and VTP thresholds - are validated across this range per Note 10 in the datasheet. The PCM package construction and internal thermal design ensure reliable performance under extended industrial thermal stress.
DS1350ABP-70IND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 34-PowerCap™ Module
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 34-PowerCap Module
DS1350ABP-70IND FAQ
1.How can I place an order for DS1350ABP-70IND through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1350ABP-70IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1350ABP-70IND reliable?
The price and inventory of DS1350ABP-70IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1350ABP-70IND is usually 5 days.
3.What payment methods are accepted for DS1350ABP-70IND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1350ABP-70IND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1350ABP-70IND?
DS1350ABP-70IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1350ABP-70IND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1350ABP-70IND?
For technical support, including DS1350ABP-70IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1350ABP-70IND requirements.
6.How does Aetrix verify that DS1350ABP-70IND is sourced from the original manufacturer or authorized distributors?
All DS1350ABP-70IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1350ABP-70IND meets industry standards.
7.What is the process for return or replacement of DS1350ABP-70IND?
All DS1350ABP-70IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1350ABP-70IND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1350ABP-70IND part is unused and in its original packaging.
Return procedure for DS1350ABP-70IND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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