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Analog Devices Inc./Maxim Integrated DS1350WP-100IND+
- Part No.:
- DS1350WP-100IND+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 34-PowerCap™ Module
- Datasheet:
-
DS1350WP-100IND+.pdf
- Description:
- IC NVSRAM 4MBIT PAR 34PWRCAP
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
DS1350WP-100IND+ from Maxim Integrated is a 4,194,304-bit (512k × 8) nonvolatile SRAM with integrated lithium backup, 3.3V supply, 100ns access time, industrial temperature range (–40°C to +85°C), and PowerCap Module (PCM) package. It functions as a drop-in replacement for volatile SRAM, EEPROM, or Flash in systems requiring guaranteed data retention during power loss-e.g., industrial PLCs, medical data loggers, and telecom base station configuration storage.
For engineers reviewing the DS1350WP-100IND+ datasheet, DS1350WP-100IND+ pinout, DS1350WP-100IND+ application, or DS1350WP-100IND+ equivalent, key selection considerations include its self-contained battery monitoring, automatic write protection at VCC < 2.8 V, open-drain RST/BW outputs, 50 µA standby current, and standardized 34-pin PCM pinout compatible with DS9034PCI+ PowerCap.
Technical Context
The DS1350WP-100IND+ integrates static RAM, lithium battery switching logic, VCC supervision, and autonomous battery health monitoring into a single surface-mountable module. Its power-fail detection circuitry asserts RST within 15 µs of VCC falling below 2.8 V and enables battery backup when VCC drops below ~2.5 V.
It implements dual-mode output control: OE/CE/WE timing governs standard read/write cycles (tACC = 100 ns, tWC = 100 ns), while RST and BW operate as open-drain status signals requiring external pull-ups and capable of sinking 10 mA. Battery voltage is tested daily via 1-second load application across a 1 MΩ internal resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (524,288 × 8), directly replaces 512k × 8 SRAM/EEPROM/Flash |
| Access Time | 100 ns - ensures compatibility with high-speed microcontrollers and FPGAs operating at ≤10 MHz bus clocks |
| Data Retention | 10 years minimum without external power - enabled by factory-fresh lithium battery disconnected until first VCC application |
| Supply Voltage | 3.0 V to 3.6 V - operates across full 3.3V ±0.3V tolerance; write protection activates at 2.8–3.0 V (VTP) |
| Standby Current | 50 µA typical - supports ultra-low-power battery-backed operation in always-on edge nodes |
| Temperature Range | –40°C to +85°C (IND grade) - qualified for industrial control, transportation, and outdoor infrastructure |
| Battery Warning | BW asserts low if battery voltage falls below 2.6 V during daily 1-second test - provides field-replaceable battery status indication |
Pinout & Package
DS1350WP-100IND+ uses the 34-pin PowerCap Module (PCM) package: a surface-mountable base that mates with DS9034PCI+ PowerCap. The PCM enables reflow soldering of the SRAM base before snap-on battery attachment, preventing thermal damage to the lithium cell.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 524,288-word addressing; no address latching required |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus with TTL-compatible levels and 2.0 mA sink capability |
| CE | Chip Enable | Active-low chip select; controls device enable and participates in write cycle timing (tWR2 measured from CE high) |
| WE | Write Enable | Active-low write strobe; write cycle initiated on later falling edge of CE or WE |
| OE | Output Enable | Active-low output control; enables data drivers only during reads (must be high during writes) |
| RST | Reset Output | Open-drain reset signal asserted during VCC ramp-up (200 ms nominal) and power failure; requires external pull-up |
| BW | Battery Warning | Open-drain output asserted when battery voltage < 2.6 V during daily test; remains active until module replacement |
| VCC | Power Supply | +3.3 V supply input; powers SRAM and control logic; triggers battery connection/disconnection at ~2.5 V threshold |
| GND | Ground | Reference return for all signals and power; two dedicated pins (pins 17 and 34) reduce ground bounce |
| NC | No Connect | Pin 16 is unconnected - must not be tied to any net or plane |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Write Protection | Unconditionally enables at VCC < 2.8 V, preventing corruption during brownout - no external supervisor IC needed |
| Daily Battery Self-Test | Applies 1 MΩ load for 1 second every 24 hours; detects end-of-life before data retention risk occurs |
| Freshness Seal | Lithium battery electrically disconnected at shipment; full capacity preserved until first VCC application |
| Standardized PCM Pinout | 34-pin layout shared across Maxim's nonvolatile SRAM family - simplifies PCB design reuse and component substitution |
| PowerFail Reset Assertion | RST pulses low within 15 µs of VCC decay, giving host processor time to execute controlled shutdown before data loss |
Applications
| Industrial Data Logger | Medical Diagnostic Equipment |
|---|---|
Use Scenario: Continuous acquisition of sensor readings (temperature, pressure, ECG) in standalone field-deployed units with intermittent power. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing raw waveform buffers and calibration coefficients; retains data across grid outages or battery swaps. Use Value: Eliminates need for wear-leveling firmware or EEPROM endurance management; 10-year retention ensures archival integrity without periodic refresh. | Use Scenario: Storing patient session parameters, fault logs, and calibration history in portable ultrasound or infusion pumps. IC Role / Device Role / Timing Role: Primary configuration memory with battery-backed write protection; RST signal triggers safe state entry during power interruption. Use Value: Meets IEC 62304 safety requirements for data persistence; BW output alerts clinical staff to replace module before battery depletion. |
| Telecom Base Station Controller | Programmable Logic Controller (PLC) |
Use Scenario: Maintaining real-time configuration, alarm thresholds, and last-known operational state in remote radio units exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: Industrial-grade NV SRAM interfacing directly with ARM Cortex-M7 controller; operates reliably from –40°C to +85°C. Use Value: Avoids Flash programming delays and EEPROM write-cycle bottlenecks during rapid parameter updates; 100 ns access enables deterministic response in control loops. | Use Scenario: Preserving ladder logic runtime variables, I/O mapping, and recipe data across factory floor power cycling or emergency stops. IC Role / Device Role / Timing Role: Drop-in replacement for legacy 512k × 8 SRAM; CE/OE/WE timing matches standard parallel bus protocols used in legacy PLC backplanes. Use Value: Enables seamless upgrade of aging control hardware without PCB redesign; PCM modularity allows field replacement of battery-only without replacing entire memory subsystem. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK14CA8-330I5F | 4 Mbit (512k × 8), 3.3V, 35 ns access, SOIC-28 package; no integrated battery monitor or BW output | Lacks daily battery self-test and open-drain warning output; requires external supervisor for RST-like functionality | Choose when board space is constrained and battery health monitoring is handled externally |
| AS7C34098B-10PCN | 4 Mbit (512k × 8), 3.3V, 10 ns access, TSOP-44; volatile SRAM requiring external battery + controller IC | No integrated power management; needs discrete lithium switch, voltage monitor, and reset generator (e.g., MAX6369) | Choose when maximum speed (10 ns) is critical and system-level power management already exists |
Compared with STK14CA8-330I5F and AS7C34098B-10PCN, DS1350WP-100IND+ delivers integrated battery supervision, autonomous write protection, and field-serviceable PowerCap architecture - reducing BOM count, eliminating external timing-critical components, and enabling predictive maintenance via BW output.
Availability
DS1350WP-100IND+ is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic equipment, telecom base station controllers, programmable logic controllers, and embedded instrumentation requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for DS1350WP-100IND+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, automotive, communications, and computing applications.
The DS1350W series targets mission-critical data retention in harsh environments, combining nonvolatile SRAM with intelligent power monitoring and battery management in a modular, rework-friendly package.
FAQ
What is the role of the BW pin on the DS1350WP-100IND+?
The BW (Battery Warning) pin on the DS1350WP-100IND+ is an open-drain output that asserts low when the internal lithium battery voltage falls below 2.6 V during its daily 1-second self-test. Once asserted, BW remains low until the DS1350WP-100IND+ module is replaced. This provides a field-visible indicator of imminent battery end-of-life, allowing proactive maintenance before data retention capability degrades. External pull-up is required for proper operation.
Does the DS1350WP-100IND+ require external components to function as a nonvolatile memory?
The DS1350WP-100IND+ requires only external pull-up resistors on RST and BW (both open-drain) and a DS9034PCI+ PowerCap snapped onto the PCM base to complete the nonvolatile memory system. No external supervisors, battery switches, or voltage monitors are needed - all power-fail detection, battery switching, write protection, and self-test logic are fully integrated within the DS1350WP-100IND+ die and PCM structure.
How does the DS1350WP-100IND+ handle power-up sequencing?
On power-up, the DS1350WP-100IND+ holds RST active for 200 ms nominal to prevent system operation during VCC transients. It also enforces a 125 ms recovery period (tREC) after VCC exceeds VTP before normal read/write operations resume. During this interval, the device completes internal initialization, disconnects the lithium battery, and validates VCC stability - ensuring reliable memory access only after supply conditions meet specification.
Can the DS1350WP-100IND+ be reflow soldered without damaging the battery?
Yes - the DS1350WP-100IND+ uses a two-part PowerCap Module (PCM) architecture: the SRAM base is reflow soldered first at up to +260°C, and the DS9034PCI+ PowerCap (containing the lithium cell) is snapped on afterward at room temperature. This eliminates thermal exposure of the battery, preserving its capacity and safety certification. The PCM design is explicitly qualified for lead-free reflow per J-STD-020.
What is the significance of the "IND" suffix in DS1350WP-100IND+?
The "IND" suffix in DS1350WP-100IND+ denotes industrial temperature grade, certifying full functional operation from –40°C to +85°C across all electrical specifications including access time (100 ns), standby current (50 µA), and battery monitoring accuracy. This qualification meets extended environmental requirements for deployment in factory automation, outdoor infrastructure, and transportation systems where commercial-grade (0°C to +70°C) parts would fail.
DS1350WP-100IND+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 34-PowerCap™ Module
- Packaging:
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 34-PowerCap Module
DS1350WP-100IND+ FAQ
1.How can I place an order for DS1350WP-100IND+ through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1350WP-100IND+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1350WP-100IND+ reliable?
The price and inventory of DS1350WP-100IND+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1350WP-100IND+ is usually 5 days.
3.What payment methods are accepted for DS1350WP-100IND+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1350WP-100IND+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1350WP-100IND+?
DS1350WP-100IND+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1350WP-100IND+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1350WP-100IND+?
For technical support, including DS1350WP-100IND+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1350WP-100IND+ requirements.
6.How does Aetrix verify that DS1350WP-100IND+ is sourced from the original manufacturer or authorized distributors?
All DS1350WP-100IND+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1350WP-100IND+ meets industry standards.
7.What is the process for return or replacement of DS1350WP-100IND+?
All DS1350WP-100IND+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1350WP-100IND+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1350WP-100IND+ part is unused and in its original packaging.
Return procedure for DS1350WP-100IND+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1350WP-100IND+ Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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