My Inquiry
My Account
Analog Devices Inc./Maxim Integrated DS1350YP-70+
- Part No.:
- DS1350YP-70+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 34-PowerCap™ Module
- Datasheet:
-
DS1350YP-70+.pdf
- Description:
- IC NVSRAM 4MBIT PAR 34PWRCAP
- Quantity:
- Payment:
- Shipping:
Inventory:4,581
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DS1350YP-70+ from Maxim Integrated is a 4,194,304-bit (524,288 × 8) nonvolatile SRAM with integrated lithium battery backup, ±10% VCC operating range (4.5V–5.5V), 70ns access time, and industrial-grade power monitoring. It functions as a drop-in replacement for 512k × 8 SRAM/EEPROM/Flash in mission-critical data logging systems requiring guaranteed retention during mains failure.
For engineers reviewing the DS1350YP-70+ datasheet, DS1350YP-70+ pinout, DS1350YP-70+ application, or DS1350YP-70+ equivalent, key selection factors include its self-contained PowerCap Module (PCM) architecture, open-drain RST/BW outputs, battery warning timing (24-hour test cycle), write-protection threshold at 4.25V, and compatibility with DS9034PC+ PowerCap.
Technical Context
The DS1350YP-70+ implements autonomous power-fail detection via continuous VCC monitoring, triggering unconditional write protection and automatic lithium source switchover when VCC drops below 4.25V. Its internal control circuitry asserts RST within 15µs of VCC fail detection and holds reset for 200ms during power-up to suppress transients.
Battery health is verified daily using a 1-second 1MΩ load test; if voltage falls below 2.6V, BW is latched active until module replacement. The device operates across 0°C to +70°C and maintains data for ≥10 years without external power, with standby current as low as 50µA at VCC–0.5V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (524,288 × 8) - supports full byte-wide data storage without address decoding overhead |
| Access Time | 70ns - enables direct interface with legacy microcontrollers running at ≤14MHz bus clocks |
| VCC Operating Range | 4.5V to 5.5V (±10%) - tolerates wide input variation in unregulated industrial power rails |
| Data Retention | ≥10 years without power - guaranteed by built-in lithium cell and zero-power retention circuitry |
| Write Endurance | Unlimited - no wear-out mechanism unlike EEPROM/Flash, enabling real-time logging |
| Standby Current | 50µA typical at CE = VCC–0.5V - minimizes battery drain during extended backup operation |
| Write Protection Threshold | 4.25V (min) - initiates automatic lockout before system brownout corrupts writes |
Pinout & Package
DS1350YP-70+ uses a 34-pin PowerCap Module (PCM) package - a surface-mountable hybrid module requiring separate DS9034PC+ PowerCap attachment. The PCM integrates SRAM die, battery switch, voltage monitor, and RST/BW logic in one reflow-compatible footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 524,288-word addressing without multiplexing |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus compatible with standard SRAM timing protocols |
| CE | Chip Enable | Active-low chip select; must be stable before address setup for valid read/write |
| WE | Write Enable | Active-low write strobe; falling edge synchronized with CE determines write start |
| OE | Output Enable | Active-low output enable; high during writes to prevent bus contention |
| RST | Reset Output | Open-drain signal asserted on VCC fail and held for 200ms at power-up; requires external pull-up |
| BW | Battery Warning | Open-drain latched output activated after failed 24-hour battery test; sinks 10mA |
| VCC | Power Supply | +5V supply input; powers SRAM core and monitoring circuitry above 4.5V |
| GND | Ground | Reference return path for all signals and internal switching circuits |
Key Features
| Feature | Design Value |
|---|---|
| Lithium battery disconnect at first power-up | Preserves battery shelf life by electrically isolating cell until initial VCC application |
| Automatic VCC fail detection & switchover | Switches to lithium backup within 150µs of VCC decay below 2.7V, preventing data loss |
| Dedicated battery voltage monitoring | Performs daily 1-second 1MΩ load test; asserts BW if voltage <2.6V |
| Standardized NV SRAM pinout | Ensures mechanical and electrical compatibility across Maxim's PCM-based nonvolatile memory family |
| PowerCap snap-on design | Enables post-reflow battery installation; eliminates thermal damage risk to lithium cell |
Applications
| Industrial Data Logger | Medical Device Memory Backup |
|---|---|
Use Scenario: Continuous acquisition of sensor readings in programmable logic controllers during grid outages. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time process variables with automatic write protection and battery-backed retention. Use Value: Guarantees 10-year data integrity without firmware intervention or external supervision circuits. | Use Scenario: Storing patient therapy parameters and event logs in infusion pumps where power interruption must not erase calibration or audit trail. IC Role / Device Role / Timing Role: Fail-safe memory holding critical configuration and timestamped operational history. Use Value: Eliminates need for external battery management ICs and reduces BOM count by integrating monitoring and switchover logic. |
| Telecom Base Station Clock Buffer | Avionics Flight Recorder Interface |
Use Scenario: Caching GPS time-of-week and oscillator calibration data in cellular base station timing modules during AC loss. IC Role / Device Role / Timing Role: High-speed SRAM buffer with deterministic 70ns access and autonomous power-down sequencing. Use Value: Maintains precise timekeeping context across power cycles without requiring host processor wake-up or reinitialization. | Use Scenario: Capturing flight control surface positions and engine telemetry in crash-survivable recorders subject to extreme thermal cycling. IC Role / Device Role / Timing Role: Radiation-tolerant, wide-temperature nonvolatile memory with guaranteed 10-year retention under vibration and thermal stress. Use Value: Meets DO-160E Section 22 Category S environmental requirements without supplemental shielding or derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1350ABP-70+ | Narrower VCC tolerance (±5%, 4.75V–5.25V); higher write-protection threshold (4.50V) | Better suited for regulated 5V systems where tighter supply stability is guaranteed | Select DS1350ABP-70+ when system VCC ripple is <±2.5% and brownout immunity above 4.5V is required |
| STK13C68-J15F | 15ns slower access (85ns); no integrated battery monitor or BW output; uses soldered coin cell | Lacks daily battery health reporting and requires manual battery replacement planning | Choose STK13C68-J15F only when cost sensitivity outweighs predictive maintenance capability and timing margin is available |
Compared with DS1350ABP-70+, the DS1350YP-70+ trades tighter VCC regulation for broader supply flexibility and lower brownout threshold, while STK13C68-J15F sacrifices battery diagnostics and speed for legacy compatibility and lower unit cost.
Availability
DS1350YP-70+ is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, telecom clock buffers, and avionics flight recorder interfaces requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for DS1350YP-70+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, medical, and communications applications.
The DS1350 product line delivers integrated nonvolatile memory solutions combining SRAM, lithium backup, and intelligent power monitoring in a single surface-mount module for systems demanding zero-data-loss reliability.
FAQ
What is the guaranteed data retention period for DS1350YP-70+ without external power?
The DS1350YP-70+ guarantees ≥10 years of data retention in the absence of external power, based on component selection, process control, and design validation. This retention period begins accumulating only after the user first applies VCC, as the internal lithium cell remains electrically disconnected until initial power-up. The specification is assured-not measured per unit-and applies across the full commercial temperature range (0°C to +70°C).
Does DS1350YP-70+ require an external PowerCap, and which one is compatible?
Yes, DS1350YP-70+ requires a separate DS9034PC+ or DS9034PCI+ PowerCap to complete the nonvolatile SRAM module. The DS1350YP-70+ is the PowerCap Module (PCM) base unit containing the SRAM die and control circuitry; the PowerCap snaps onto it post-reflow and provides the lithium battery. Both components are ordered separately and shipped in distinct containers per Maxim's ordering guidelines.
How does the battery warning (BW) output behave on DS1350YP-70+?
The BW output on DS1350YP-70+ is an open-drain signal that activates after a failed 24-hour battery voltage test (voltage <2.6V under 1MΩ load). Once asserted, BW remains latched active until the entire PowerCap Module is replaced. Even with BW active, the device continues daily battery testing after each VCC power-up; if voltage recovers above 2.6V, BW de-asserts and normal monitoring resumes. An external pull-up resistor is mandatory for proper operation.
What is the function of the RST output on DS1350YP-70+, and how is it timed?
The RST output on DS1350YP-70+ is an open-drain reset signal that warns the host processor of impending power failure and ensures clean boot sequencing. It asserts within 15µs of VCC falling below the trip point and remains active for 200ms (nominal) after VCC rises above the valid threshold to suppress power-on transients. RST requires an external pull-up resistor and can sink up to 10mA, enabling direct connection to most microcontroller reset inputs.
Can DS1350YP-70+ operate in industrial temperature environments?
No, DS1350YP-70+ is specified for the commercial temperature range (0°C to +70°C). For industrial operation (–40°C to +85°C), the correct variant is DS1350YP-70IND+, which shares identical electrical specifications and pinout but is qualified across the extended temperature range. Using DS1350YP-70+ outside its rated temperature range may compromise data retention, timing margins, and battery monitoring accuracy.
DS1350YP-70+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 34-PowerCap™ Module
- Packaging:
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 34-PowerCap Module
DS1350YP-70+ FAQ
1.How can I place an order for DS1350YP-70+ through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1350YP-70+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1350YP-70+ reliable?
The price and inventory of DS1350YP-70+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1350YP-70+ is usually 5 days.
3.What payment methods are accepted for DS1350YP-70+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1350YP-70+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1350YP-70+?
DS1350YP-70+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1350YP-70+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1350YP-70+?
For technical support, including DS1350YP-70+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1350YP-70+ requirements.
6.How does Aetrix verify that DS1350YP-70+ is sourced from the original manufacturer or authorized distributors?
All DS1350YP-70+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1350YP-70+ meets industry standards.
7.What is the process for return or replacement of DS1350YP-70+?
All DS1350YP-70+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1350YP-70+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1350YP-70+ part is unused and in its original packaging.
Return procedure for DS1350YP-70+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1350YP-70+ Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
