Analog Devices Inc./Maxim Integrated DS2045W-100#

Overview

DS2045W-100# from Maxim Integrated is a 1Mb (128k × 8) reflowable nonvolatile SRAM with integrated rechargeable manganese lithium (ML) battery, internal NV controller, and power-supply monitor output RST. It operates at 3.3V ±0.3V, delivers 100ns access time, and provides unconditional write protection when VCC drops below 2.8V - used in RAID systems, industrial controllers, and data-acquisition systems requiring persistent memory without external backup circuitry.

For engineers reviewing the DS2045W-100# datasheet, DS2045W-100# pinout, DS2045W-100# application, or DS2045W-100# equivalent, key selection criteria include its 256-ball 27mm² BGA package, 3-year data retention per charge, open-drain RST supervisor output, industrial temperature range (–40°C to +85°C), and compatibility with standard convection reflow soldering.

Technical Context

The DS2045W-100# integrates SRAM, ML battery, and NV controller on a single BGA substrate, enabling autonomous power-fail detection and seamless switchover to battery backup within 1.5µs. Its internal voltage reference (VTP = 2.8–3.0V) triggers unconditional write protection and high-impedance I/O states before VCC falls below 2.5V (VSW).

It features an open-drain RST output with 10mA sink capability, requiring an external pullup resistor, and supports full read/write operation under 3.3V ±0.3V supply with 100ns cycle timing - compliant with standard parallel SRAM interface protocols for microprocessor interfacing without glue logic.

Key Specifications

Pinout & Package

DS2045W-100# uses a 256-ball, 27mm² PBGA module with 17 address inputs (A0–A16), 8 bidirectional data lines (DQ0–DQ7), and standard control signals (CE, WE, OE). Ground and no-connect balls are distributed across perimeter rows to support thermal and mechanical reliability during reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with DS1245W-100+ and STK15C88-3LF1, DS2045W-100# uniquely combines reflowability, integrated rechargeable battery, and UL-recognized charging - reducing system complexity while enabling multi-cycle field deployment without battery replacement.

Availability

DS2045W-100# is available at Aetrix Electronics and suitable for RAID systems, industrial controllers, and fire alarm systems requiring stable component supply, long-life data retention, and RoHS-compliant reflow assembly.

Supply support for DS2045W-100# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, computing, and communications applications.

The DS2045W-100# belongs to Maxim's nonvolatile SRAM product line, engineered specifically for systems demanding seamless, maintenance-free memory persistence across unpredictable power conditions - targeting mission-critical infrastructure where data integrity cannot be compromised.

FAQ

What is the maximum data retention time for DS2045W-100# under typical operating conditions?

The DS2045W-100# provides up to 3 years of data retention per full charge at +25°C, based on accumulated time without VCC. This assumes initial 96-hour charging period and two prior reflow exposures. Retention scales inversely with temperature and discharge depth - at +85°C, expected retention drops to ~1 year. DS2045W-100# does not require periodic refresh or external power to sustain stored data.

Does DS2045W-100# require external components to function as a nonvolatile SRAM?

No, DS2045W-100# operates as a complete nonvolatile SRAM solution with no external components required for basic functionality. Only an external pullup resistor (1kΩ–10kΩ) on the RST pin is needed for proper reset signaling. Decoupling capacitors (e.g., 0.1µF ceramic) are recommended but not mandatory for stable operation. DS2045W-100# integrates SRAM, ML battery, charger, and power-monitor logic into one BGA module.

Can DS2045W-100# be soldered using standard lead-free reflow profiles?

Yes, DS2045W-100# is rated for convection reflow up to 225°C peak temperature and is qualified per IPC/JEDEC J-STD-020. Its internal ML battery is designed to withstand multiple reflow cycles without degradation. The device ships with a freshness seal and ~60% initial charge - full capacity is achieved after 96 hours of operation at VCC > VTP. DS2045W-100# eliminates the need for post-soldering battery installation or activation.

How does the RST output of DS2045W-100# behave during power-up and power-down events?

During power-down, RST asserts low within 3.0µs after VCC falls below VTP and remains active until VCC drops below the internal battery voltage. During power-up, RST stays low for 225–525ms after VCC exceeds VTP to ensure SRAM readiness - longer than the 125ms tREC recovery window. DS2045W-100#'s RST is open-drain and requires an external pullup; it functions as a reliable CPU supervisor without additional timing circuitry.

Is DS2045W-100# compatible with existing DS1245W-100+ PCB layouts?

No, DS2045W-100# is not pin-compatible with DS1245W-100+. Although both share the same 1Mb × 8 organization and parallel interface timing, DS2045W-100# uses a 256-ball BGA footprint versus DS1245W-100+'s 28-pin SOIC package. Layout redesign is required to accommodate the BGA, thermal pads, and revised power/ground ball distribution. DS2045W-100# offers functional equivalence with superior integration - not mechanical drop-in replacement.