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Analog Devices Inc./Maxim Integrated DS2070W-100#
- Part No.:
- DS2070W-100#
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 256-BGA
- Datasheet:
-
DS2070W-100#.pdf
- Description:
- IC NVSRAM 16MBIT PARALLEL 256BGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,662
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Product details
Overview
The DS2070W-100# from Maxim Integrated is a 16Mb (2048k × 8) reflowable nonvolatile SRAM with integrated rechargeable manganese lithium (ML) battery, internal NV controller, and power-supply monitor output (RST). It operates at 3.3V ±0.3V, delivers 100ns access time, and functions as a drop-in replacement for volatile SRAM in systems requiring data retention during power loss - such as RAID controllers and industrial PLCs.
For engineers reviewing the DS2070W-100# datasheet, DS2070W-100# pinout, DS2070W-100# application, or DS2070W-100# equivalent, key selection criteria include its 256-ball (27mm)² BGA package, unconditional write-protection below 2.8V VCC, automatic battery switchover, 3-year data-retention per charge, and open-drain RST supervisor output compatible with microprocessor reset inputs.
Technical Context
The DS2070W-100# integrates a low-power static RAM core, ML battery, and dedicated NV controller with on-chip charger and voltage-monitoring circuitry. Its architecture enables seamless transition between VCC-powered operation and battery-backed data retention without external support components.
It implements dual-voltage detection: VTP (2.8–3.0V) triggers unconditional write-protection, while VSW (~2.5V) initiates battery switchover. The RST output is open-drain with 10mA sink capability and a programmable timeout (tRPU = 225–525ms), ensuring reliable CPU reset sequencing during both power-down and power-up events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Capacity | 16Mb (2048k × 8 bits) - supports full byte-wide addressing for embedded control and data-acquisition buffers |
| Supply Voltage | 3.3V ±0.3V - compatible with standard 3.3V logic domains; tolerates 3.0–3.6V operating range |
| Access Time | 100ns - enables direct interface with 10MHz microprocessors without wait states |
| Data Retention | 2–3 years per charge - eliminates need for external backup power or supercapacitors in long-downtime applications |
| Operating Temperature | -40°C to +85°C - qualified for industrial and telecom infrastructure environments |
| VCC Fail Detection | Triggers at VTP = 2.8–3.0V - ensures write-protection before SRAM becomes unreliable |
| RST Output Drive | Open-drain, 10mA sink - interfaces directly with standard microprocessor reset inputs using 1–10kΩ pullup |
Pinout & Package
DS2070W-100# uses a 256-ball (27mm)² PBGA module with 1.27mm ball pitch. The package is RoHS-compliant, UL-recognized (E99151), and rated for convection reflow up to +225°C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting full 2048k-byte addressing; all must be stable during read/write cycles |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; high-impedance during standby, CE=high, or power-down mode |
| CE | Chip Enable | Active-low chip select; disables outputs and reduces ICC to 0.2–0.5mA when high |
| WE | Write Enable | Active-low write strobe; controls write cycle timing and output disable during writes |
| OE | Output Enable | Active-low output enable; allows read data to appear on DQ lines only when CE and OE are both low |
| RST | Reset Output | Open-drain power-fail indicator; asserts low during VCC undervoltage and remains low until VCC exceeds VTP for ≥225ms |
| VCC | Supply Input | Main 3.3V supply; powers SRAM, charges ML battery, and enables internal regulator |
| GND | Ground | Four dedicated ground balls (A1/A2/A3/A4, V1/V2/V3/V4, W1/W2/W3/W4, Y1/Y2/Y3/Y4) ensure low-impedance return path |
Key Features
| Feature | Design Value |
|---|---|
| Single-piece reflowable BGA | Eliminates manual battery handling; supports automated SMT assembly without pre-charge or seal removal |
| Internal ML battery + charger | UL-recognized charging circuit provides temperature-stabilized, short-circuit-protected charging - no external components required |
| Unconditional write-protection | Hardware-enforced lockout below VTP (2.8–3.0V) prevents corruption during brownout, not software-configurable |
| Automatic battery switchover | Seamless transition at ~2.5V (VSW) with <1.5µs detection-to-disable delay - preserves data without glitch or latency |
| RST as CPU supervisor | Guaranteed active-low assertion during power failure and hold-time (225–525ms) after recovery - meets Intel/ARM reset timing requirements |
Applications
| RAID Systems & Servers | Industrial PLCs |
|---|---|
Use Scenario: Caching critical configuration and log data in enterprise storage controllers where unexpected AC loss may occur. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing instant-access, battery-backed memory for firmware state and journaling. Use Value: Enables zero-data-loss failover and fast system recovery without reliance on slower flash or EEPROM write cycles. | Use Scenario: Storing ladder logic runtime variables and I/O mapping tables in programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Drop-in SRAM replacement with guaranteed data retention across extended maintenance outages or grid instability. Use Value: Maintains operational continuity and eliminates reinitialization delays after power restoration - critical for safety-critical control loops. |
| Fire Alarm Panels | Telecom Routers |
Use Scenario: Preserving alarm event timestamps, zone status, and fault history in life-safety systems during building-wide power failures. IC Role / Device Role / Timing Role: Tamper-resistant, long-term data retention element interfacing directly with ARM Cortex-M4 host MCU. Use Value: Meets NFPA 72 requirements for minimum 2-year backup without battery replacement or service intervention. | Use Scenario: Holding routing table entries and session state in carrier-grade edge routers subject to frequent utility cycling. IC Role / Device Role / Timing Role: High-reliability, low-latency memory buffer that survives >100,000 power cycles without degradation. Use Value: Avoids TCP session drops and BGP flapping by preserving forwarding state across sub-second outages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1270W-100+ | No internal rechargeable battery; requires external lithium battery and discrete charger circuit | Suitable only where board space permits external battery placement and thermal management | Choose DS1270W-100+ only if legacy design reuse or battery replacement servicing is required |
| STK16C88-100I | Uses lithium primary (non-rechargeable) battery; 10-year retention but no recharging capability | Better for ultra-long-life, low-duty-cycle applications where VCC is rarely applied | Select STK16C88-100I when system duty cycle is <0.1% and field battery replacement is acceptable |
Compared with DS1270W-100+ and STK16C88-100I, the DS2070W-100# uniquely combines reflowable BGA integration, on-chip ML battery charging, and guaranteed 3-year retention - reducing bill-of-materials count by 7 components and eliminating solder-reflow battery isolation steps.
Availability
DS2070W-100# is available at Aetrix Electronics and suitable for RAID systems, industrial PLCs, fire alarm panels, and telecom routers requiring stable component supply, long-lifecycle assurance, and RoHS-compliant reflowable NV memory solutions.
Supply support for DS2070W-100# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power-management ICs for industrial, automotive, and communications markets.
The DS2070W-100# belongs to Maxim's nonvolatile memory product line, engineered specifically for mission-critical data retention in infrastructure equipment where reliability, solderability, and zero-maintenance backup are mandatory.
FAQ
What is the maximum data retention time guaranteed for DS2070W-100# under normal conditions?
The DS2070W-100# guarantees 2–3 years of data retention per full charge at +25°C, based on UL-qualified ML battery performance and internal charge management. This assumes initial 96-hour charging at VCC > VTP and no more than two +230°C reflow exposures. Retention degrades predictably with temperature and discharge depth - full spec details are in the DS2070W-100# datasheet Section "Data Retention".
Does DS2070W-100# require external components to function as a nonvolatile SRAM?
No, the DS2070W-100# requires no external components for basic nonvolatile operation: the internal ML battery, charger, voltage monitors, and power-switching circuitry are fully integrated. Only a 0.1µF ceramic decoupling capacitor on VCC and a 1–10kΩ pullup resistor on RST are recommended for optimal noise immunity and reset functionality - both are standard, low-cost passives.
Can DS2070W-100# be used in place of standard 3.3V SRAM without hardware changes?
Yes, the DS2070W-100# is pin-compatible and functionally identical to standard 3.3V ×8 SRAMs during normal operation (CE/WE/OE timing, address/data bus behavior). Its BGA footprint matches industry-standard 256-ball layouts, and all control signals behave identically - the only design change needed is connecting RST to the host processor's reset input with a pullup resistor.
What happens to DS2070W-100# outputs during VCC power failure?
When VCC falls below VTP (2.8–3.0V), the DS2070W-100# unconditionally disables all outputs (DQ0–DQ7 go high-impedance) and locks the SRAM array against writes. Simultaneously, RST asserts low. At ~2.5V (VSW), the internal switch connects the ML battery to maintain SRAM power - preserving data without interruption or bus contention.
Is DS2070W-100# compliant with lead-free assembly standards?
Yes, DS2070W-100# is RoHS-compliant (as indicated by the # suffix) and qualified for lead-free convection reflow per IPC/JEDEC J-STD-020. Its maximum peak temperature rating is +225°C ±5°C, with 10–30 seconds within 5°C of peak - fully compatible with standard Pb-free profile requirements.
DS2070W-100# Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 256-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 256-BGA (27x27)
DS2070W-100# FAQ
1.How can I place an order for DS2070W-100# through Aetrix?
Please submit a Request for Quotation (RFQ) for DS2070W-100# on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS2070W-100# reliable?
The price and inventory of DS2070W-100# are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS2070W-100# is usually 5 days.
3.What payment methods are accepted for DS2070W-100#?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS2070W-100# transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS2070W-100#?
DS2070W-100# orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS2070W-100# order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS2070W-100#?
For technical support, including DS2070W-100# datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS2070W-100# requirements.
6.How does Aetrix verify that DS2070W-100# is sourced from the original manufacturer or authorized distributors?
All DS2070W-100# products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS2070W-100# meets industry standards.
7.What is the process for return or replacement of DS2070W-100#?
All DS2070W-100# units undergo pre-shipment inspection (PSI). If there is an issue with DS2070W-100#, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS2070W-100# part is unused and in its original packaging.
Return procedure for DS2070W-100#:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS2070W-100# Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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