Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS2227-070

Name: DS2227-070
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS2227-070
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: DS2227-070

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 72-SIMM

Datasheet:: DS2227-070.pdf

Description:: IC NVSRAM 4MBIT PARALLEL 72SIMM

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,319

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

DS2227-070 from Dallas Semiconductor (now Analog Devices) is a 4-Mbit nonvolatile static RAM module in a 72-pin SIP Stik format, organized as 512k × 8, 256k × 16, or 128k × 32 bits, with 70 ns access time, lithium-backed data retention >10 years without VCC, and JEDEC-standard SIMM interface-used in industrial control memory buffers requiring persistent state across power cycles.

For engineers reviewing the DS2227-070 datasheet, DS2227-070 pinout, DS2227-070 application, or DS2227-070 equivalent, key selection criteria include its self-contained NV backup architecture, simultaneous bank-select capability via discrete CE/OE/WE per bank, write-protection threshold at 4.25 V, and compatibility with standard 72-pin SIMM sockets such as AMP 821824-8.

Technical Context

The DS2227-070 integrates four independent SRAM banks (each 128k × 8), each with dedicated chip enable (CE), output enable (OE), and write enable (WE) pins, enabling flexible byte/word/long-word access without external logic. Its nonvolatile operation relies on dual lithium batteries with automatic isolation switching and precision battery voltage monitoring at power-up.

Data retention is managed by an internal power-switching circuit that engages lithium backup when VCC falls below ~3.0 V and disengages it when VCC rises above ~3.0 V, while guaranteeing write protection for VCC < 4.25 V and full functionality for VCC > 4.5 V. The device uses no external support circuitry and maintains high-impedance outputs and "don't care" inputs during brownout.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Capacity	4,194,304 bits (128k × 32 / 256k × 16 / 512k × 8 configurable)
Access Time	70 ns - defines minimum address-to-valid-data delay under full VCC (5V ±10%) and specified load
Data Retention	>10 years without VCC - enabled by dual lithium cells and automatic power-switching circuitry
Write Protection Threshold	4.25 V - device auto-enables write protection when VCC drops below this level to prevent corruption
Operating Voltage	4.5 V to 5.5 V - ensures reliable read/write operation and disables NV backup until VCC ≥ 4.5 V
Interface Standard	JEDEC 72-pin SIMM - enables plug-in compatibility with industry-standard sockets (e.g., AMP 821824-8)
Battery Monitoring	2.0 V threshold - second memory access inhibited if measured battery voltage < 2.0 V, indicating imminent failure

Pinout & Package

Package: 72-pin Single-In-Line Package (SIP) Stik, 4.250" × 0.850" × 0.400", perpendicular mount compatible.

Pin/Terminal	Circuit Role	Design Meaning
1, 51	VCC	Main +5 V supply input; powers SRAM core and control logic; triggers lithium disconnect above ~3.0 V
2–9, 14–21, 26–33, 38–45	D0–D7 (Bank 1–4)	Independent bidirectional data I/O per bank; allows parallel access or wired-OR configuration
11, 23, 35, 47	1-CE to 4-CE	Individual chip enables per bank; enables selective activation of one or more banks without decoding logic
12, 24, 36, 48	1-OE to 4-OE	Per-bank output enables; supports independent read timing and bus contention avoidance
13, 25, 37, 49	1-WE to 4-WE	Per-bank write enables; allows concurrent or staggered writes across banks with no shared timing constraints
52–68	A0–A16	17-bit address bus shared across all banks; selects 128k locations per bank
50, 72	GND	Power return paths; both required for stable noise margin and current distribution
10, 22, 34, 46, 69–71	NC	No-connect pins; must remain unconnected per datasheet; not internally bonded

Key Features

Feature	Design Value
Flexible Memory Organization	Configurable as 128k × 32, 256k × 16, or 512k × 8 via external data bus wiring-eliminates need for multiplexers or glue logic
Dual Lithium Battery Redundancy	Two isolated batteries with automatic voltage-based selection-ensures uninterrupted data retention even if one cell depletes
Automatic Write Protection	Hardware-level VCC monitoring triggers immediate write disable below 4.25 V-no firmware or external supervisor required
Transparent Nonvolatile Operation	All NV control circuitry operates autonomously; host sees only standard SRAM timing and protocol-no driver or register programming needed
Bank-Isolated Control Signals	Four independent CE/OE/WE sets allow true concurrent access or selective bank disabling-enables memory partitioning and fault containment

Applications

Industrial PLC Data Logging	Medical Device Configuration Storage
Use Scenario: Retaining runtime parameters, calibration coefficients, and event logs across unplanned power loss in programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer interfacing directly to microcontroller data bus with zero software overhead. Use Value: Guarantees >10-year data integrity without supercapacitors or external battery management, reducing BOM count and field failure risk.	Use Scenario: Storing patient-specific therapy settings and device calibration data in portable infusion pumps and diagnostic monitors. IC Role / Device Role / Timing Role: Fail-safe memory element with battery health monitoring to meet IEC 62304 Class C safety requirements. Use Value: Dual-battery redundancy and 2.0 V low-battery detection enable predictive maintenance alerts before data loss occurs.
Avionics Black Box Memory	Telecom Base Station Configuration
Use Scenario: Capturing flight-critical telemetry and fault records in aircraft data acquisition units exposed to wide thermal and voltage transients. IC Role / Device Role / Timing Role: Self-contained NV SRAM with brownout immunity and write-protection at 4.25 V-operates through 100 ms dips to 3.5 V. Use Value: Eliminates need for external voltage supervisors or backup regulators, simplifying DO-160G Section 21 compliance testing.	Use Scenario: Preserving radio frequency channel maps, antenna tilt settings, and licensing keys in outdoor macrocell base stations. IC Role / Device Role / Timing Role: JEDEC 72-pin SIMM-compatible module enabling hot-swap-capable field-replaceable memory cards. Use Value: Standard socket interface allows rapid firmware recovery and configuration restoration without board rework or soldering.

Industrial PLC Data Logging

Medical Device Configuration Storage

Use Scenario: Retaining runtime parameters, calibration coefficients, and event logs across unplanned power loss in programmable logic controllers.

IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer interfacing directly to microcontroller data bus with zero software overhead.

Use Value: Guarantees >10-year data integrity without supercapacitors or external battery management, reducing BOM count and field failure risk.

Use Scenario: Storing patient-specific therapy settings and device calibration data in portable infusion pumps and diagnostic monitors.

IC Role / Device Role / Timing Role: Fail-safe memory element with battery health monitoring to meet IEC 62304 Class C safety requirements.

Use Value: Dual-battery redundancy and 2.0 V low-battery detection enable predictive maintenance alerts before data loss occurs.

Avionics Black Box Memory

Telecom Base Station Configuration

Use Scenario: Capturing flight-critical telemetry and fault records in aircraft data acquisition units exposed to wide thermal and voltage transients.

IC Role / Device Role / Timing Role: Self-contained NV SRAM with brownout immunity and write-protection at 4.25 V-operates through 100 ms dips to 3.5 V.

Use Value: Eliminates need for external voltage supervisors or backup regulators, simplifying DO-160G Section 21 compliance testing.

Use Scenario: Preserving radio frequency channel maps, antenna tilt settings, and licensing keys in outdoor macrocell base stations.

IC Role / Device Role / Timing Role: JEDEC 72-pin SIMM-compatible module enabling hot-swap-capable field-replaceable memory cards.

Use Value: Standard socket interface allows rapid firmware recovery and configuration restoration without board rework or soldering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STK12C68	2-Mbit capacity (256k × 8), 100 ns access, single lithium cell, no battery voltage monitoring	Lacks dual-battery redundancy and 2.0 V fail-safe detection; suitable only for lower-reliability, cost-sensitive designs	Select STK12C68 only when memory size and retention duration requirements are halved and battery health diagnostics are unnecessary
DS1249Y-120	4-Mbit NV SRAM in 28-pin DIP, 120 ns access, no bank-select flexibility, JEDEC SIMM interface absent	Requires PCB footprint redesign and external address/data demultiplexing; incompatible with SIMM socket infrastructure	Choose DS1249Y-120 only for legacy DIP-based systems where SIP Stik mechanical integration is impossible

Compared with STK12C68 and DS1249Y-120, the DS2227-070 uniquely delivers bank-isolated control, JEDEC SIMM compatibility, and dual-battery monitoring-making it the only option supporting modular, field-upgradeable, and safety-critical NV memory in space-constrained industrial platforms.

Availability

DS2227-070 is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device configuration storage, and avionics black box memory requiring stable component supply, long-term lifecycle support, and guaranteed nonvolatile performance.

Supply support for DS2227-070 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Dallas Semiconductor, now part of Analog Devices, specializes in high-reliability mixed-signal ICs for data integrity, timing, and power management in harsh environments.

The DS2227-070 belongs to the Flexible NV SRAM Stik product line, engineered for plug-in nonvolatile memory replacement in systems where battery-backed RAM must operate without external support circuitry or firmware intervention.

FAQ

What is the memory organization flexibility of the DS2227-070?

The DS2227-070 supports three configurations: 128k × 32 bits, 256k × 16 bits, or 512k × 8 bits. This is achieved by externally wiring data lines and control signals across its four internal banks-no internal mode registers or configuration fuses are required. The DS2227-070 maintains identical 70 ns access timing across all configurations.

How does the DS2227-070 handle power failure and data retention?

When VCC drops below ~3.0 V, the DS2227-070 automatically switches to lithium backup power and places all outputs in high-impedance state. Data remains intact for >10 years without external power. The DS2227-070 also enforces hardware write protection below 4.25 V to prevent corruption during brownout conditions.

Does the DS2227-070 require external circuitry for nonvolatile operation?

No. The DS2227-070 integrates all necessary nonvolatile circuitry-including dual lithium batteries, voltage monitoring comparators, power-switching logic, and backup SRAM control-within the 72-pin SIP Stik package. The DS2227-070 operates as a drop-in replacement for standard SRAM modules without additional components.

What is the purpose of separate CE, OE, and WE pins per bank in the DS2227-070?

Separate control pins per bank allow independent activation, read, and write operations across the four internal 128k × 8 banks. This enables memory partitioning, concurrent access, and fault isolation-critical for real-time systems where one bank's failure or update must not affect others. The DS2227-070 leverages this to support flexible bus-width configurations without external logic.

How is battery health monitored in the DS2227-070?

The DS2227-070 performs automatic battery voltage measurement at every power-up using an on-chip precision comparator. If the measured voltage is below 2.0 V, the DS2227-070 inhibits the second memory access to signal imminent data loss. Users can detect this condition via a three-step read-write-verify sequence, making battery status observable without external test equipment.

DS2227-070 Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 72-SIMM

Packaging:: Bag

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 4Mbit

Memory Organization:: 128K x 32, 256K x 16, 512K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Socket

Supplier Device Package:: 72-SIMM

DS2227-070 FAQ

1.How can I place an order for DS2227-070 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS2227-070 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS2227-070 reliable?

The price and inventory of DS2227-070 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS2227-070 is usually 5 days.

3.What payment methods are accepted for DS2227-070?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS2227-070 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS2227-070?

DS2227-070 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS2227-070 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS2227-070?

For technical support, including DS2227-070 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS2227-070 requirements.

6.How does Aetrix verify that DS2227-070 is sourced from the original manufacturer or authorized distributors?

All DS2227-070 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS2227-070 meets industry standards.

7.What is the process for return or replacement of DS2227-070?

All DS2227-070 units undergo pre-shipment inspection (PSI). If there is an issue with DS2227-070, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS2227-070 part is unused and in its original packaging.

Return procedure for DS2227-070:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-14 Open Collector vs Open Drain vs Push-Pull Outputs: Circuit Design Guide

An engineering guide to open-collector, open-drain and push-pull outputs, including pull-up resistor limits, rise-time calculations, wired logic, voltage translation and power-off checks.

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…