Analog Devices Inc./Maxim Integrated DS2227-120
- Part No.:
- DS2227-120
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 72-SIMM
- Datasheet:
-
DS2227-120.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 72SIMM
- Quantity:
- Payment:

- Shipping:

Inventory:4,181
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Product details
Overview
DS2227-120 from Dallas Semiconductor (now Maxim Integrated) is a 4-Mbit nonvolatile static RAM module in a 72-pin SIP Stik format, organized as 512k × 8, 256k × 16, or 128k × 32 bits, with 120 ns access time, >10-year data retention without VCC, and integrated dual lithium batteries for seamless power-loss protection. It serves as drop-in NV SRAM replacement in industrial memory subsystems requiring persistent storage during brownouts or shutdown.
For engineers reviewing the DS2227-120 datasheet, DS2227-120 pinout, DS2227-120 application, or DS2227-120 equivalent, key selection considerations include JEDEC 72-pin SIMM compatibility, automatic write-protection below 4.25 V, battery status detection via read-write-verify sequence, and bank-select flexibility across four independent SRAM banks.
Technical Context
The DS2227-120 implements fully transparent nonvolatile operation: all backup logic, voltage monitoring, and lithium switching circuitry operate autonomously without host intervention. Its four independent memory banks each have dedicated CE/OE/WE pins, enabling configurable byte/word/long-word access granularity and flexible bus-width mapping.
Power management is hardware-driven: at VCC < 4.25 V, write protection activates; below ~3.0 V, internal power switch connects lithium source to retain data; above ~3.0 V on power-up, external VCC resumes control. Battery redundancy uses two isolated lithium cells with automatic selection of the higher-voltage cell.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Capacity | 4,194,304 bits (configurable as 512k × 8 / 256k × 16 / 128k × 32) |
| Access Time | 120 ns - defines maximum clock rate for synchronous read/write cycles |
| Data Retention | >10 years without VCC - guaranteed from date code, no external capacitor or supercap required |
| Write Protection Threshold | VCC < 4.25 V - automatic hardware lock prevents accidental writes during brownout |
| Supply Voltage Range | 4.5 V to 5.5 V - compatible with standard +5 V TTL systems |
| Battery Redundancy | Dual lithium cells with auto-switching - eliminates single-point battery failure risk |
| Operating Temperature | 0°C to 70°C - validated for commercial-grade embedded control and instrumentation |
Pinout & Package
DS2227-120 uses a 72-pin SIP (Single In-line Package) Stik form factor (4.25" × 0.85") compliant with JEDEC standard SIMM socket mounting. Pin layout supports four independent 128k × 8 SRAM banks, each with dedicated control and data terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 51, 72 | VCC / GND | Primary power and ground distribution across module; multiple pins reduce IR drop and noise |
| 2–9, 14–21, 26–33, 38–45 | Data I/O (D0–D7 per bank) | Four independent 8-bit data buses - enables flexible width configuration via external tying |
| 11, 23, 35, 47 | Bank CE (1–4) | Individual chip enable per 128k × 8 bank - allows interleaved or segmented addressing |
| 12, 24, 36, 48 | Bank OE (1–4) | Output enable per bank - supports selective output driving to avoid bus contention |
| 13, 25, 37, 49 | Bank WE (1–4) | Write enable per bank - enables atomic writes to individual banks without affecting others |
| 52–68 | A0–A16 | 17 address lines shared across all banks - supports full 128k depth per bank |
Key Features
| Feature | Design Value |
|---|---|
| Flexible Memory Organization | Runtime-configurable as 512k × 8, 256k × 16, or 128k × 32 via external signal tying - eliminates need for multiple part numbers |
| Automatic Power-Fail Write Protection | Hardware-enforced lockout below 4.25 V - prevents corruption during uncontrolled power collapse |
| Lithium Battery Status Detection | Verified via three-step read-write-verify sequence - enables field diagnostics without external test equipment |
| Dual-Battery Redundancy | Internal isolation switch selects higher-voltage cell - ensures >10-year retention even if one cell degrades |
| JEDEC 72-Pin SIMM Compatibility | Mounts directly into standard AMP 821824-8 socket - no adapter or PCB redesign needed |
Applications
| Industrial PLC Data Logging | Medical Device Configuration Storage |
|---|---|
Use Scenario: Retaining real-time sensor calibration tables and alarm thresholds during AC mains interruption in programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer that maintains volatile configuration state without battery-backed DRAM refresh overhead. Use Value: Eliminates need for EEPROM wear-leveling or flash programming delays; supports 100% write-cycle availability during runtime. | Use Scenario: Preserving patient-specific therapy parameters and device self-test results in infusion pumps and ECG monitors during battery swaps or power cycling. IC Role / Device Role / Timing Role: Fail-safe memory holding critical safety-critical settings with deterministic write latency and zero software intervention. Use Value: Meets IEC 62304 Class C software requirements by guaranteeing data integrity across unlimited power cycles. |
| Avionics Black Box Recorder | Telecom Base Station Configuration |
Use Scenario: Capturing flight control surface positions and engine telemetry in aircraft crash survivable recorders where power may be lost abruptly. IC Role / Device Role / Timing Role: High-reliability NV SRAM acting as last-state snapshot buffer with sub-120 ns write capture window. Use Value: Dual lithium cells ensure data retention through extended crash-induced power loss exceeding 10 years. | Use Scenario: Storing FPGA bitstreams, radio channel maps, and encryption keys in 4G/5G baseband units subject to frequent firmware updates and thermal cycling. IC Role / Device Role / Timing Role: Secure, fast-access nonvolatile storage for configuration data requiring immediate availability after cold boot. Use Value: 120 ns access time enables direct CPU read-after-reset without wait states; write-protection prevents corruption during RF interference events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK12C68 | 512k × 8 only; single lithium cell; 100 ns access; no battery status reporting | Lacks dual-battery redundancy and diagnostic verification sequence | Lower-cost option where 10-year retention is sufficient and field battery health monitoring is not required |
| DS1248 | 256k × 8; integrated RTC; 100 ns access; no bank-select flexibility | Includes real-time clock but fixed organization limits bus-width adaptability | Preferred when time-stamped logging is needed, but sacrifices configurability and bank-level control |
Compared with STK12C68 and DS1248, the DS2227-120 uniquely combines 4-bank selectability, dual-lithium redundancy, and battery health verification-making it optimal for high-availability systems where memory corruption risk must be minimized across decades of field operation.
Availability
DS2227-120 is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device configuration storage, and avionics black box recorders requiring stable component supply and long-term lifecycle support.
Supply support for DS2227-120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Dallas Semiconductor, acquired by Maxim Integrated in 2001, specialized in precision analog, nonvolatile memory, and real-time clock ICs for mission-critical embedded systems.
The DS2227-120 belongs to the Flexible NV SRAM Stik product line, designed specifically to replace volatile SRAM in legacy systems while delivering guaranteed data retention during indefinite power loss-targeting aerospace, medical, and industrial control applications.
FAQ
What is the memory organization flexibility of the DS2227-120?
The DS2227-120 supports three configurations: 512k × 8, 256k × 16, or 128k × 32 bits. This is achieved by externally tying data lines and control signals across its four independent 128k × 8 banks. No internal register programming is required-the DS2227-120's flexibility is purely hardware-wired, enabling reuse across multiple system architectures without firmware changes.
How does the DS2227-120 detect low battery voltage?
The DS2227-120 performs automatic battery voltage checking on every power-up. If the lithium supply falls below 2.0 V, the second memory access is inhibited. Users verify battery health via a three-step process: read any location, write new data to that location, then re-read-if the written value fails to appear, the DS2227-120 battery is depleted and data retention is no longer assured.
Does the DS2227-120 require external components for nonvolatile operation?
No. The DS2227-120 integrates all necessary circuitry-including voltage monitoring, lithium switching, and dual battery management-within the 72-pin SIP Stik package. Unlike discrete NV SRAM solutions, the DS2227-120 needs no external capacitors, regulators, or backup controllers to achieve >10-year data retention without VCC.
What is the significance of the "-120" suffix in DS2227-120?
The "-120" suffix denotes the access time specification: 120 ns maximum tACC and tRC. This distinguishes it from faster variants (DS2227-70 and DS2227-100) and confirms timing compliance for systems operating at up to ~8.3 MHz synchronous bus rates. All DS2227-120 units share identical pinout, organization, and nonvolatile functionality-only speed grade differs.
Can the DS2227-120 be used in place of standard SRAM without design changes?
Yes-the DS2227-120 is functionally transparent during normal operation: it behaves identically to a standard 512k × 8 SRAM with identical timing, pinout, and control protocol. The nonvolatile features activate automatically only during power loss, so existing SRAM interfaces, drivers, and timing constraints remain fully valid for the DS2227-120.
DS2227-120 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 72-SIMM
- Packaging:
- Bag
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 128K x 32, 256K x 16, 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 120ns
- Access Time:
- 120 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Socket
- Supplier Device Package:
- 72-SIMM
DS2227-120 FAQ
1.How can I place an order for DS2227-120 through Aetrix?
Please submit a Request for Quotation (RFQ) for DS2227-120 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS2227-120 reliable?
The price and inventory of DS2227-120 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS2227-120 is usually 5 days.
3.What payment methods are accepted for DS2227-120?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS2227-120 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS2227-120?
DS2227-120 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS2227-120 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS2227-120?
For technical support, including DS2227-120 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS2227-120 requirements.
6.How does Aetrix verify that DS2227-120 is sourced from the original manufacturer or authorized distributors?
All DS2227-120 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS2227-120 meets industry standards.
7.What is the process for return or replacement of DS2227-120?
All DS2227-120 units undergo pre-shipment inspection (PSI). If there is an issue with DS2227-120, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS2227-120 part is unused and in its original packaging.
Return procedure for DS2227-120:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS2227-120 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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