Analog Devices Inc./Maxim Integrated DS3070W-100#

Overview

DS3070W-100# from Maxim Integrated is a 3.3V, 16Mb (2048k × 8) nonvolatile SRAM with integrated year-2000-compliant real-time clock (RTC), internal rechargeable manganese lithium (ML) battery, and power-fail management circuitry in a 256-ball 27mm × 27mm BGA module. It delivers unconditional write protection, automatic battery switchover, RST supervision, and IRQ/FT interrupt/wake-up capability for mission-critical data logging and timekeeping in industrial control and network infrastructure.

For engineers reviewing the DS3070W-100# datasheet, DS3070W-100# pinout, DS3070W-100# application, or DS3070W-100# equivalent, this page provides verified functional identity, validated BGA pin mapping, confirmed 100ns access timing, industrial temperature support (–40°C to +85°C), and two documented alternative parts for NV SRAM+RTC integration - all derived from Maxim's official DS3070W datasheet Rev 1 (10/06).

Technical Context

The DS3070W-100# integrates three co-located subsystems on a single BGA substrate: a 2048k × 8 static SRAM array, a full-function RTC with century/year/month/date/hour/minute/second BCD registers and alarm/watchdog logic, and an ML battery with UL-recognized charging circuitry. Its dual-chip-select architecture (CE for SRAM, CS for RTC) enables independent byte-wide access without bus contention.

Power management is hardware-automated: VCC monitoring triggers unconditional write protection at 2.8V–3.0V (VTP), seamless battery switchover below ~2.5V (VSW), and 125ms recovery delay (tREC) before resuming operation. The open-drain RST and IRQ/FT outputs support CPU supervision and wake-up via external pull-ups, with guaranteed 8.0mA and 7.0mA sink capability respectively.

Key Specifications

Pinout & Package

DS3070W-100# uses a 256-ball, 27mm × 27mm BGA package with 1.27mm ball pitch. Pin functions are validated per Maxim DS3070W datasheet Rev 1 (pages 9–10). All GND balls (A1–A4, V1–V4, W1–W4, Y1–Y4, A17–A20, W17–W20, Y17–Y20) provide low-inductance grounding; VCC balls (F1–F4, A10–D10) enable distributed power delivery.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM with integrated RTC applications.

Compared with DS1270W-100+ and STK15C88-3LF35, DS3070W-100# uniquely integrates RTC, charger, and battery in a reflow-ready BGA - reducing bill-of-materials count, eliminating field-replaceable batteries, and guaranteeing 2+ years data retention without external components.

Availability

DS3070W-100# is available at Aetrix Electronics and suitable for RAID systems, industrial controllers, and POS terminals requiring stable component supply, long-life data retention, and certified timekeeping under extended temperature stress.

Supply support for DS3070W-100# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, communications, and computing applications.

The DS3070W-100# belongs to Maxim's nonvolatile memory product line, designed specifically to replace battery-backed SRAM modules in systems demanding high-reliability, long-term data integrity, and integrated timekeeping without external support circuitry.

FAQ

What is the guaranteed data retention period for DS3070W-100# when VCC is removed?

The DS3070W-100# guarantees ≥2 years of data retention per full charge cycle at +25°C, based on internal manganese lithium battery capacity and optimized power management. This specification assumes initial VCC application for ≥96 hours to achieve full charge and accounts for up to two convection reflow exposures. Actual retention may extend to 3 years under optimal conditions, as confirmed in the DS3070W datasheet Section "DATA RETENTION".

How does DS3070W-100# handle power failure detection and write protection?

The DS3070W-100# monitors VCC continuously and triggers unconditional write protection when voltage falls below 2.8V–3.0V (VTP), as specified in DC Electrical Characteristics. At ~2.5V (VSW), it automatically switches to internal battery power while maintaining RTC and SRAM operation. This hardware-enforced sequence - documented in "POWER-DOWN/POWER-UP TIMING" - prevents data corruption without software intervention or external circuitry.

Can DS3070W-100# be used as a CPU supervisor or watchdog timer?

Yes. The DS3070W-100# provides two dedicated outputs: RST serves as a reset supervisor asserting on VCC failure (tRPD ≤ 3.0µs), and IRQ/FT functions as a programmable watchdog timer with configurable timeouts (1/16s to 124s) and alarm wake-up capability. Both outputs are open-drain and require external pull-ups, as detailed in Note 1 and the "Using the Watchdog Timer" section of the datasheet.

What is the pin compatibility status of DS3070W-100# with other Maxim NV SRAM devices?

The DS3070W-100# shares the same 256-ball BGA footprint and core SRAM interface (CE, WE, OE, A0–A20, DQ0–DQ7) with the DS1270W series, but adds CS, IRQ/FT, and RST pins not present on DS1270W. It is not pin-compatible with DS1270W due to these additional signals and different internal routing - PCB layout must accommodate the full DS3070W-100# pinout per page 9 of the datasheet.

Does DS3070W-100# support Y2K-compliant date calculations including leap years?

Yes. The DS3070W-100# RTC implements full year-2000-compliant (Y2KC) calendar logic with automatic day-of-month and leap-year corrections. Century, year, month, date, day, hour, minute, and second are stored in BCD format across 16 registers, and the hardware handles February 29 adjustments for all valid leap years without host processor involvement, as described in the "Detailed Description" and "Clock Operations" sections.