Infineon Technologies FS3L30R07W2H3FB11BPSA1

Overview

FS3L30R07W2H3FB11BPSA1 from Infineon Technologies is a 650 V, 30 A EasyPACK™ IGBT module with integrated Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode, featuring PressFIT terminals and an NTC thermistor. It delivers low switching losses (Eon = 0.41 mJ, Eoff = 0.71 mJ at Tvj = 150°C), 1.05 K/W junction-to-case thermal resistance per IGBT, and supports 3-level inverter topologies in motor drives, solar inverters, and UPS systems.

For engineers reviewing the FS3L30R07W2H3FB11BPSA1 datasheet, FS3L30R07W2H3FB11BPSA1 pinout, FS3L30R07W2H3FB11BPSA1 application, or FS3L30R07W2H3FB11BPSA1 equivalent, key selection criteria include its 650 V VCES rating, 30 A nominal collector current, PressFIT mechanical interface, integrated NTC for temperature monitoring, and optimized performance in high-efficiency 3-level NPC and T-type converters.

Technical Context

This module integrates two IGBTs and three diodes in a single EasyPACK™ 2B housing for 3-level inverter leg implementation. Its IGBT3 die uses Trench/Fieldstop technology with gate charge QG = 0.30 µC and internal gate resistor RGint ≈ 0 Ω, enabling fast switching (td(on) = 0.031 µs, tf = 0.043 µs at Tvj = 150°C) while maintaining robust short-circuit withstand capability (ISC = 160 A, tP ≤ 10 µs).

The diode section includes a 650 V SiC Schottky diode (thinQ H series) and two silicon emitter-controlled diodes - one rated for 30 A continuous forward current (IF), another for 8 A - configured to support asymmetric conduction paths in 3-level topologies. Thermal management is enhanced by Al₂O₃ substrate (RthJC = 1.05 K/W per IGBT, 1.25–2.50 K/W per diode) and defined case-to-heatsink resistance (RthCH = 1.10–2.50 K/W).

Key Specifications

Pinout & Package

FS3L30R07W2H3FB11BPSA1 is housed in the EasyPACK™ 2B package (120 mm × 62 mm × 17 mm), featuring PressFIT solderless terminals for high-reliability board mounting and integrated clamping mechanism. The module contains 12 terminals: 2 main DC+ pins, 2 main DC− pins, 2 AC output pins, 2 gate drive pins (G1/G2), 2 emitter sense pins (E1/E2), 1 NTC terminal (T), and 1 auxiliary emitter (Eaux).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 3-level IGBT module applications.

Compared with FF300R07ME4 and BSM300GA120DN2, FS3L30R07W2H3FB11BPSA1 uniquely combines PressFIT assembly, integrated SiC freewheeling diode, and NTC in a compact 3-level-optimized package-enabling higher power density, lower system-level EMI, and simplified thermal monitoring without external sensors.

Availability

FS3L30R07W2H3FB11BPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for safety-critical applications.

Supply support for FS3L30R07W2H3FB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in IGBT, SiC, and GaN technologies for industrial and automotive markets.

This part belongs to Infineon's EasyPACK™ family of press-fit power modules, engineered specifically for high-reliability 3-level inverter applications in renewable energy and industrial automation where assembly simplicity, thermal performance, and system-level efficiency are critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RGon = 20 Ω and RGoff = 20 Ω for optimal switching performance at Tvj = 150°C. Using RG > 33 Ω increases Eon/Eoff significantly (Eoff rises ~40% at RG = 200 Ω), risking thermal runaway under high-frequency operation. For noise immunity, RC snubbers are preferred over excessive gate resistance.

Does the module include both silicon and SiC diodes, and how are they used?

Yes: it integrates three diodes - two silicon emitter-controlled diodes (rated 30 A and 8 A) for main and clamping paths, plus one 650 V thinQ H SiC Schottky diode for ultra-low-loss freewheeling. The SiC diode operates exclusively in the low-voltage, high-dv/dt freewheeling path, eliminating reverse recovery loss and associated EMI.

Can the NTC thermistor be used for closed-loop thermal protection?

Yes - the integrated 5.00 kΩ NTC (B25/100 = 3433 K) provides direct die temperature feedback. With proper calibration against RthJC and power loss models, it enables real-time junction temperature estimation within ±2.5°C accuracy, supporting dynamic derating and overtemperature shutdown in accordance with IEC 61800-5-1.

What is the mechanical mounting force specification for PressFIT terminals?

The module requires 40–80 N clamping force per integrated mounting clamp to ensure reliable electrical contact and thermal interface. Exceeding 80 N risks ceramic substrate cracking; below 40 N increases contact resistance and thermal impedance. Mounting must use specified torque-controlled fixtures per Infineon Application Note AN2015-04.