Infineon Technologies FS3L50R07W2H3FB11BOMA1

Overview

FS3L50R07W2H3FB11BOMA1 from Infineon Technologies is a 650 V, 50 A rated EasyPACK™ IGBT module with integrated Trench/Fieldstop IGBT3 and emitter-controlled 3-diode configuration, featuring PressFIT terminations and an NTC thermistor. It delivers low switching losses (Eon = 0.96–1.25 mJ, Eoff = 1.20–1.70 mJ at 50 A), 0.65 K/W junction-to-case thermal resistance per IGBT, and supports 3-level inverter topologies in motor drives and solar inverters.

For engineers reviewing the FS3L50R07W2H3FB11BOMA1 datasheet, FS3L50R07W2H3FB11BOMA1 pinout, FS3L50R07W2H3FB11BOMA1 application, or FS3L50R07W2H3FB11BOMA1 equivalent, key selection considerations include its 650 V VCES rating, 50 A nominal collector current at TC = 95°C, integrated SiC Schottky diode (650 V), PressFIT mechanical interface, and NTC-based temperature monitoring capability.

Technical Context

This module integrates two IGBTs and three diodes in a half-bridge + neutral-leg 3-level topology optimized for NPC (Neutral Point Clamped) inverters. Its Trench/Fieldstop IGBT3 die enables fast switching with low VCE(sat) (1.45–1.80 V) across -40 to 150°C junction temperature range and supports short-circuit withstand time ≤5 µs at 330 A.

The integrated thinQ H SiC Schottky diode (650 V) provides low reverse recovery charge (Qr = 1.20–2.50 µC) and energy (Erec = 0.22–0.53 mJ), while the on-board NTC (R25 = 5.00 kΩ, B25/100 = 3433 K) enables real-time thermal monitoring of the IGBT die. Stray inductance is specified at 45 nH, critical for voltage overshoot control in high-di/dt applications.

Key Specifications

Pinout & Package

FS3L50R07W2H3FB11BOMA1 uses the EasyPACK™ 2B package with PressFIT solderless termination system. Dimensions: 62.8 mm × 33.5 mm × 17.0 mm. Al₂O₃ substrate ensures low thermal resistance and high isolation (2.5 kV RMS, 1 min).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 3-level IGBT module applications.

Compared with FF600R07ME4, FS3L50R07W2H3FB11BOMA1 offers integrated 3-level functionality and thermal monitoring in a compact form factor; versus FS3L100R07W2H3F_B11, it trades current capacity for lower gate charge (0.50 µC vs. 0.95 µC) and reduced cost in mid-power applications.

Availability

FS3L50R07W2H3FB11BOMA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and UPS systems requiring stable component supply, long-lifecycle support, and qualified automotive-grade reliability.

Supply support for FS3L50R07W2H3FB11BOMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the EasyPACK™ family-designed specifically for high-efficiency, space-constrained 3-level inverter applications in renewable energy, industrial automation, and uninterruptible power systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The device supports continuous operation up to Tvj = 150°C, as confirmed by thermal characterization data across all electrical parameters. Derating curves for IC and power dissipation are provided in the datasheet for Tvj > 125°C, and the NTC enables closed-loop thermal management to enforce this limit in real time.

Does FS3L50R07W2H3FB11BOMA1 support short-circuit protection?

Yes-it sustains 330 A short-circuit current for ≤5 µs at Tvj = 150°C with VGE ≤ 15 V and VCC = 360 V. This behavior is enabled by the IGBT3 die's inherent desaturation characteristics and is validated in application note AN2015-04, allowing implementation of hardware-based DESAT detection.

How is the NTC thermistor electrically interfaced?

The NTC is accessed via dedicated NTC+ and NTC− terminals. It has R25 = 5.00 kΩ (±5%), B25/100 = 3433 K, and 20 mW power dissipation rating at 25°C. Standard voltage-divider biasing with a precision reference yields ±1.5°C temperature accuracy across -40 to 150°C.

Can this module be paralleled for higher current capacity?

Parallel operation is feasible but requires matched gate drive (identical RGon/RGoff, <5% skew), symmetrical busbar layout to minimize LsCE imbalance, and forced-air or liquid cooling to maintain ΔTvj < 5 K between modules. Application note AP2015-07 details layout and gate-drive guidelines for multi-module configurations.