Semtech Corporation GS2975ACNTE3Z

Overview

GS2975ACNTE3Z from Semtech is a Transient Diverting Suppressor (TDS) designed for high-energy EOS protection of 22V-rated power or I/O lines, featuring ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), 27.5–28V clamping voltage at 40A, and 20mΩ dynamic resistance. It protects USB PD and Type-C VBus lines in industrial and portable electronics.

For engineers reviewing the GS2975ACNTE3Z datasheet, pinout, applications, or equivalent options, key selection criteria include clamping stability across temperature and current, low dynamic resistance for minimal voltage overshoot, DFN-6 package footprint constraints, and compatibility with 22V bus architectures requiring robust surge immunity per IEC 61000-4-5.

Technical Context

The GS2975ACNTE3Z uses a surge-rated FET as its primary protection element, activated by a precision trigger circuit that senses overvoltage events. Unlike conventional TVS diodes, its clamping voltage remains nearly constant-27.5–28V-across 24A to 40A peak pulse currents due to decreasing R_DS(on) under surge conditions.

It operates from −40°C to +125°C with stable clamping performance and exhibits only 175pF junction capacitance at 22V reverse bias. The device achieves ±4kV EFT immunity per IEC 61000-4-4 and maintains <600nA leakage at 22V, enabling low-power system integration without signal integrity compromise.

Key Specifications

Pinout & Package

GS2975ACNTE3Z is housed in a Pb-free, RoHS-compliant DFN-6 package measuring 1.6mm × 1.6mm × 0.55mm with exposed thermal pad (not electrically connected). The compact footprint saves >50% board area versus SOIC-8 TVS alternatives.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMAJ22A and TPD2E001DRYR, GS2975ACNTE3Z uniquely delivers 22V standoff, 40A surge capacity, and flat 27.5V clamping in a 1.6mm² DFN-making it the only option among the three capable of protecting 22V power rails in USB PD, industrial load switches, and storage systems without redesigning layout or relaxing safety margins.

Availability

GS2975ACNTE3Z is available at Aetrix Electronics and suitable for USB Power Delivery interfaces, industrial load switch inputs, and IoT edge node power buses requiring stable component supply, long-term lifecycle support, and guaranteed RoHS/WEEE compliance.

Supply support for GS2975ACNTE3Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semtech Corporation is a U.S.-based fabless semiconductor company specializing in analog and mixed-signal ICs for precision sensing, protection, and connectivity solutions.

The Transient Diverting Suppressor (TDS) product line-including GS2975ACNTE3Z-is engineered specifically for high-reliability EOS protection in 12–36V power domains where conventional TVS performance degrades with temperature and current.

FAQ

What is the primary protection function of GS2975ACNTE3Z?

GS2975ACNTE3Z functions as a transient diverting suppressor that shunts high-energy electrical overstress (EOS) events-such as ESD, lightning-induced surges, and EFT-to ground using an active FET-based architecture. Unlike passive TVS diodes, GS2975ACNTE3Z maintains a stable 27.5–28V clamping voltage across its full 40A surge rating and operating temperature range, making it ideal for safeguarding 22V power rails in USB PD, industrial, and storage applications.

Does GS2975ACNTE3Z require external bias or control signals to operate?

No, GS2975ACNTE3Z is fully autonomous and requires no external power, enable signals, or configuration. Its internal precision trigger circuit activates the shunt FET automatically when input voltage exceeds the breakdown threshold (~27.9V), initiating clamping within nanoseconds. This self-contained operation makes GS2975ACNTE3Z drop-in compatible with existing PCB layouts designed for TVS diodes, provided pinout and thermal layout guidelines are followed.

Can GS2975ACNTE3Z be used on high-speed data lines such as USB 3.x or PCIe?

No, GS2975ACNTE3Z is not suitable for high-speed data line protection due to its 175pF junction capacitance at 22V, which would severely degrade signal integrity on differential pairs operating above 480 Mbps. It is expressly intended for 22V power or low-frequency I/O lines. For USB 3.x SuperSpeed lanes, Semtech recommends low-capacitance devices like RClamp3371ZC (<0.25pF), used in conjunction with GS2975ACNTE3Z for comprehensive USB-C interface protection.

How does GS2975ACNTE3Z compare to standard TVS diodes in temperature performance?

GS2975ACNTE3Z clamps at 27–28V across −40°C to +125°C, with negligible variation-unlike standard TVS diodes whose clamping voltage rises linearly with both peak current and temperature. At 125°C and 40A, a typical 22V TVS may clamp above 38V, risking damage to 24V-rated components. GS2975ACNTE3Z avoids this by leveraging a low-R_DS(on) FET, ensuring consistent protection margins regardless of ambient conditions-a critical advantage in automotive, industrial, and outdoor deployments.

What PCB layout practices are essential for optimal GS2975ACNTE3Z performance?

To achieve rated 40A surge capability, all three GND pins (1, 2, 3) and all three IN pins (4, 5, 6) of GS2975ACNTE3Z must be connected with short, wide copper traces directly to solid ground and protected-line planes. Place the device within 5mm of the connector entry point, use ≥4 vias per GND pin to the internal ground plane, and avoid stubs or splits in the protected line trace. These practices minimize parasitic inductance, ensuring fast response and full energy diversion-critical for meeting IEC 61000-4-5 and -4-2 test requirements.