Semtech Corporation GS2986-INE3

Overview

GS2986-INE3 from Semtech is a Transient Diverting Suppressor (TDS) designed for high-energy EOS protection of single 22V I/O or power lines. It delivers ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), and a stable 27.6–28V clamping voltage across its full current and temperature range (−40°C to +125°C). It is deployed in USB Type-C PD bus protection where precise clamping below controller damage thresholds is critical.

For engineers reviewing the GS2986-INE3 datasheet, pinout, applications, or equivalent options, key selection criteria include its constant-clamp FET architecture, DFN 1.6×1.6mm 6-lead package, low 20mΩ dynamic resistance, 175pF junction capacitance at 22V, and suitability for industrial load switch input protection and USB PD interface hardening.

Technical Context

The GS2986-INE3 uses a surge-rated FET as its primary protection element, activated by a precision trigger circuit when transient voltage exceeds breakdown. Unlike conventional TVS diodes, its clamping voltage remains nearly constant-27.6–28V-across 24A to 40A (1.2/50μs + 8/20μs combination waveform) due to decreasing R_DS(on) under surge conditions.

It operates over −40°C to +125°C with <130–600nA reverse leakage at 22V, 1120W peak pulse power rating, and thermal stability verified up to +150°C junction temperature. Its functional design targets applications requiring predictable, temperature-invariant clamping where traditional TVS devices exhibit rising V_C with current and temperature.

Key Specifications

Pinout & Package

GS2986-INE3 is housed in a Pb-free, RoHS-compliant DFN package measuring 1.6mm × 1.6mm × 0.55mm with 6 leads and UL 94V-0 molding compound. All pins must be soldered for rated surge performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with TDS2211P.C, GS2986-INE3 shares identical protection performance but may differ in marking or logistics coding; compared with uClamp2411ZA, GS2986-INE3 offers 2× peak current capacity and 5V lower clamping-making it the sole viable option for 22V bus-level surge hardening.

Availability

GS2986-INE3 is available at Aetrix Electronics and suitable for USB Type-C PD interfaces, industrial load switch inputs, and IoT edge node power rails requiring stable component supply, long-term lifecycle support, and guaranteed RoHS/WEEE compliance.

Supply support for GS2986-INE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semtech Corporation is a U.S.-based fabless semiconductor company specializing in analog and mixed-signal ICs for precision protection, sensing, and signal integrity.

The GS2986-INE3 belongs to Semtech's Transient Diverting Suppressor (TDS) product line, engineered specifically to replace conventional TVS diodes in high-reliability 20–24V power and interface protection applications demanding flat clamping and thermal stability.

FAQ

What is the primary protection function of the GS2986-INE3?

The GS2986-INE3 functions as a transient diverting suppressor that shunts high-energy EOS events-including ESD, lightning surges, and EFT-to ground using a precision-triggered FET. Unlike TVS diodes, it maintains a stable 27.6–28V clamping voltage across its full 40A surge rating and −40°C to +125°C operating range, making GS2986-INE3 ideal for protecting sensitive 22V power rails in USB PD and industrial systems.

Does the GS2986-INE3 require external bias or control signals?

No, the GS2986-INE3 is fully passive and requires no external bias, enable pin, or configuration. Its internal trigger circuit activates automatically when transient voltage exceeds the breakdown threshold, turning on the shunt FET to conduct surge current. This self-contained operation makes GS2986-INE3 simple to integrate-only IN and GND connections are needed-and eliminates risk of misconfiguration in safety-critical designs.

How does the GS2986-INE3 compare to standard TVS diodes in clamping behavior?

Standard TVS diodes exhibit rising clamping voltage with increasing peak pulse current (V_C = V_BR + I_PP × R_DYN) and temperature drift. In contrast, GS2986-INE3 uses a FET-based architecture where R_DS(on) decreases under surge, resulting in near-constant 27.6–28V clamping from 24A to 40A and across −40°C to +125°C. This behavior makes GS2986-INE3 more predictable and safer for protecting 24V-tolerant ICs than conventional TVS solutions.

Can the GS2986-INE3 be used on high-speed data lines like USB SuperSpeed?

No-GS2986-INE3 is intended for power or low-speed signal lines (e.g., VBUS, CC, SBU, or load switch inputs), not high-speed differential pairs. Its 175pF junction capacitance would degrade signal integrity on USB 3.x or DisplayPort lanes. For those, Semtech recommends low-capacitance devices like RClamp3371ZC (<0.25pF). GS2986-INE3 should be applied only where bandwidth constraints permit its capacitance, such as DC power rails or control lines.

What PCB layout practices maximize GS2986-INE3 performance?

To achieve rated 40A surge capability, connect all three GND pins (1, 2, 3) to a solid ground plane using multiple vias, and route all three IN pins (4, 5, 6) via short, wide traces directly from the protected connector. Place GS2986-INE3 as close as possible to the entry point-within 5mm-to minimize parasitic inductance. Avoid thermal pads; energy is dissipated in the silicon, not the package. These practices ensure GS2986-INE3 delivers full spec performance in real-world layouts.