Infineon Technologies HFA15TB60PBF

Overview

HFA15TB60PBF from International Rectifier is an ultrafast, ultrasoft recovery diode rated for 600 V reverse voltage, 15 A continuous forward current at TC = 100°C, and 84 nC reverse recovery charge at 25°C - optimized as a companion diode for IGBTs and MOSFETs in high-frequency power conversion stages of industrial inverters and motor drives.

For engineers reviewing the HFA15TB60PBF datasheet, HFA15TB60PBF pinout, HFA15TB60PBF application, or HFA15TB60PBF equivalent, key selection criteria include soft recovery behavior (di(rec)M/dt = 188 A/µs), low Qrr, low IRRM, and TO-220AC package thermal performance (RθJC = 1.7 K/W) for snubbing reduction and switching loss minimization.

Technical Context

This diode employs epitaxial construction to achieve ultrafast recovery (trr = 19 ns typ. at 25°C, 74 ns at 125°C) with ultrasoft turn-off - eliminating snap-off during tb recovery phase and suppressing EMI generation. Its low Qrr (84–241 nC) and controlled di(rec)M/dt (188 A/µs at 25°C) directly reduce switching losses in both the diode and co-switching transistor.

Designed for hard-switched topologies operating up to several hundred kHz, it delivers stable reverse leakage (<10 µA at rated VR, <1000 µA at 125°C), low forward voltage (1.3–1.7 V at 15 A), and robust thermal capability (TJ = –55 to +150°C) without requiring external snubbers in many PFC and inverter designs.

Key Specifications

Pinout & Package

Package: TO-220AC - single-diode configuration with isolated tab (cathode-connected case), standard through-hole mounting, 3.0 mm lead spacing, and 1.6 mm lead length reference point per JEDEC outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast, soft-recovery diode applications.

Compared with STTH1606D and IXYS MUR1560, the HFA15TB60PBF delivers superior softness (lower di(rec)M/dt), lowest Qrr, and tighter VF distribution - making it preferred for high-frequency, low-EMI inverter and PFC stages where switching loss and noise are design-critical.

Availability

HFA15TB60PBF is available at Aetrix Electronics and suitable for motor drives, solar inverters, and industrial SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for HFA15TB60PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies since 2015) was a pioneer in power semiconductor innovation, specializing in high-performance diodes, MOSFETs, and IGBTs for industrial and automotive systems.

The HFA ultrafast diode product line targets high-efficiency, high-frequency power conversion - specifically engineered to replace conventional fast recovery diodes in IGBT/MOSFET companion roles where soft switching and EMI control are essential.

FAQ

Is HFA15TB60PBF suitable for use with 650 V silicon carbide MOSFETs?

Yes - its 600 V VR rating provides sufficient margin for 650 V SiC MOSFETs operating within datasheet limits (e.g., 600 V DC bus). However, system-level overvoltage transients must remain below 600 V to avoid avalanche conduction; clamping or layout optimization is recommended for edge cases.

What is the maximum recommended mounting torque for the TO-220AC package?

The datasheet specifies a mounting torque of 6.0 kg-cm (5.0 lbf·in) for the TO-220AC package. Exceeding this may deform the case or compromise thermal interface integrity; use calibrated torque screwdrivers and thermal grease (RθCS = 0.50 K/W typical) for optimal heat transfer.

Does HFA15TB60PBF require a heatsink in all applications?

Yes - even at 15 A continuous current, junction temperature rises rapidly without heatsinking. At TC = 100°C, RθJC = 1.7 K/W implies ~25.5 W power dissipation; ambient operation above 40°C mandates a heatsink sized to maintain TJ ≤ 150°C per thermal calculations using RθJA = 80 K/W (unmounted) or system-specific RθCA.

How does the di(rec)M/dt specification impact PCB layout?

A di(rec)M/dt of 188 A/µs demands minimized loop inductance in the diode's current path. Layout must use short, wide traces, ground-plane stitching near the cathode tab, and symmetric routing to reduce parasitic inductance - otherwise, voltage spikes exceeding VR may occur during recovery, risking device failure.