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Infineon Technologies IDB09E60ATMA1
- Part No.:
- IDB09E60ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IDB09E60ATMA1.pdf
- Description:
- DIODE GP 600V 19.3A TO263-3-2
- Quantity:
- Payment:
- Shipping:
Inventory:3,881
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Product details
Overview
IDB09E60ATMA1 from Infineon Technologies is a 600 V, 9 A fast-switching Emitter Controlled (EmCon) diode in PG-TO263-3 package, featuring 1.5 V forward voltage at 9 A and 175 °C maximum junction temperature. It delivers soft recovery with 75 ns reverse recovery time, 343 nC reverse recovery charge, and low peak reverse current (10.2 A) - optimized for high-frequency PFC and solar inverter boost stages.
For engineers reviewing the IDB09E60ATMA1 datasheet, IDB09E60ATMA1 pinout, IDB09E60ATMA1 application, or IDB09E60ATMA1 equivalent, key selection criteria include EmCon technology's low Qrr/VF trade-off, thermal robustness up to 175 °C, soft switching behavior for EMI reduction, and validated performance under 800 A/µs di/dt at 125 °C junction temperature.
Technical Context
This EmCon diode uses a proprietary emitter-controlled structure that modulates carrier lifetime without lifetime-killing dopants, enabling simultaneous low VF (1.5 V @ 9 A, 25 °C) and fast, soft recovery (trr = 75 ns, S = 4 @ 25 °C). Its design eliminates minority-carrier tail current, reducing switching losses and EMI in hard-commutated topologies.
The device operates with a thermal resistance RthJC of 2.6 K/W and supports continuous forward current up to 13 A at TC = 90 °C. Its reverse recovery softness factor increases with temperature (S = 5.7 @ 150 °C), maintaining controlled turn-off across industrial operating ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - blocks line transients in 400 V AC input PFC stages without derating |
| IF (rated) | 9 A - continuous conduction mode current rating at Tj = 150 °C, matching typical interleaved PFC phase-leg sizing |
| VF @ 9 A, 25 °C | 1.5 V - reduces conduction loss to ~13.5 W per diode in 12 kW PFC designs |
| trr @ 25 °C | 75 ns - enables >100 kHz switching in totem-pole PFC while limiting di/dt-induced voltage overshoot |
| Qrr @ 25 °C | 343 nC - cuts turn-off energy by >40% vs. standard FRD counterparts, lowering MOSFET voltage stress |
| S @ 25 °C | 4 - soft recovery slope limits EMI generation and snubber losses in unclamped circuits |
| RthJC | 2.6 K/W - allows direct heatsink mounting for thermal management in compact 3U power supplies |
Pinout & Package
PG-TO263-3 (D²PAK) package with isolated tab (Pin 2 = Cathode, Pin 3 = Anode, Pin 1 = NC). The thermally enhanced leadframe provides low-inductance, high-current paths and direct case-to-heatsink thermal coupling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | No Connect | Electrically isolated; no internal connection - must remain unconnected or floating in PCB layout |
| Pin 2 | Cathode | Main current return path; electrically and thermally tied to exposed metal tab for heatsinking |
| Pin 3 | Anode | Forward current entry point; routed with low-inductance trace to minimize switching loop area |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled (EmCon) technology | Enables intrinsic carrier lifetime control - eliminates need for platinum/gold diffusion, preserving long-term VF stability |
| Soft reverse recovery (S ≥ 4) | Reduces di/dt-induced voltage spikes and radiated emissions without external snubbers in bridge rectifiers |
| 175 °C maximum junction temperature | Supports operation in sealed industrial enclosures or high-ambient solar inverters without forced air cooling |
| Low Qrr (343–612 nC, 25–150 °C) | Lowers turn-off loss in synchronous rectification and bidirectional DC/DC converters with shared gate drivers |
| RoHS-compliant, MSL1 reflow profile | Enables single-pass lead-free reflow assembly on standard FR4 PCBs with 6 cm² copper pour |
Applications
| Industrial PFC Modules | Solar Inverter Boost Stages |
|---|---|
Use Scenario: Active front-end rectifier in 10–15 kW motor drives with 400 V AC input and >98% efficiency target. IC Role / Device Role / Timing Role: Fast-recovery boost diode in continuous conduction mode (CCM) totem-pole PFC stage. Use Value: 75 ns trr and 343 nC Qrr reduce MOSFET turn-on loss and voltage overshoot, enabling 120 kHz operation without snubbers. | Use Scenario: DC-link boost diode in string-level solar inverters operating at 1000 V DC bus and ambient up to 70 °C. IC Role / Device Role / Timing Role: High-voltage, high-temperature freewheeling diode in interleaved boost converter. Use Value: 175 °C Tjmax and 2.6 K/W RthJC allow derating-free operation on passive heatsinks, extending field lifetime in desert deployments. |
| Server PSU Rectification | EV Onboard Charger (OBC) PFC |
Use Scenario: Output rectification in 3.3 kW server power supply with dual-phase interleaved PFC and LLC resonant stage. IC Role / Device Role / Timing Role: Low-VF, low-Qrr output diode replacing SiC Schottky in cost-sensitive 48 V output rails. Use Value: 1.5 V VF at 9 A lowers conduction loss by 18% vs. standard FRD, improving full-load efficiency by 0.4%. | Use Scenario: AC/DC front-end diode in 11 kW OBC with bidirectional capability and IEC 61851 compliance. IC Role / Device Role / Timing Role: EmCon diode in active clamp PFC stage handling regenerative braking energy return. Use Value: Soft recovery (S = 5.5 @ 125 °C) prevents gate driver shoot-through during reverse conduction transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-recovery diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDW10G65C5XKSA1 | 650 V SiC Schottky; zero Qrr, 1.7 V VF @ 10 A; higher cost, no reverse recovery | Better for >200 kHz designs where zero recovery loss justifies premium; not suitable for hard-commutated snubberless layouts | Select when EMI budget is tight and system can absorb higher VF-related conduction loss |
| STTH12R06DJF | 600 V FRED; 1.85 V VF @ 12 A; 110 ns trr, 520 nC Qrr; lower Tjmax (175 °C same), higher RthJC (3.2 K/W) | Higher conduction and switching loss; requires larger heatsink; less soft recovery (S ≈ 2.5) | Select only if EmCon availability is constrained and thermal margin exists for 0.35 V VF penalty |
Compared with IDW10G65C5XKSA1, IDB09E60ATMA1 offers lower VF and proven soft switching in cost-sensitive 100 kHz PFC, while STTH12R06DJF trades off recovery performance for broader legacy compatibility and lower unit cost.
Availability
IDB09E60ATMA1 is available at Aetrix Electronics and suitable for industrial PFC modules, solar inverter boost stages, and EV onboard charger designs requiring stable component supply, high-temperature reliability, and repeatable soft-switching behavior.
Supply support for IDB09E60ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.
IDB09E60ATMA1 belongs to Infineon's EmCon diode product line, engineered specifically for high-efficiency, high-power-factor AC/DC conversion in industrial and renewable energy systems where soft recovery and thermal resilience are critical.
FAQ
What is the function of Pin 1 on IDB09E60ATMA1?
Pin 1 is a no-connect (NC) terminal with no internal electrical connection. It must remain unconnected in PCB layout and should not be tied to ground, power, or any signal net. Its presence supports mechanical alignment and thermal pad clearance in the PG-TO263-3 footprint but carries zero functional role.
Does IDB09E60ATMA1 require a heatsink in standard operation?
Yes - the device dissipates up to 57.7 W at TC = 25 °C and requires a heatsink to maintain Tj ≤ 175 °C. With RthJC = 2.6 K/W, even at 13 A (TC = 90 °C), junction temperature exceeds 150 °C without thermal interface material and a minimum 6 cm² copper pour per Infineon's recommended layout.
How does EmCon technology differ from standard fast recovery diodes?
EmCon uses an integrated emitter-controlled structure to dynamically modulate carrier lifetime during turn-off - achieving soft recovery without lifetime-killing dopants like platinum. This preserves long-term VF stability and eliminates parameter drift seen in conventional FRDs subjected to high-temperature aging.
Can IDB09E60ATMA1 replace a standard 600 V ultrafast diode in existing designs?
Yes, with layout verification: its PG-TO263-3 footprint matches industry-standard D²PAK, and soft recovery reduces snubber requirements. However, due to lower VF (1.5 V vs. ~1.8 V) and higher di/dt tolerance, gate drive timing and voltage clamping may need validation to avoid overvoltage during fast turn-off transitions.
IDB09E60ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 19.3A
- Voltage - Forward (Vf) (Max) @ If:
- 2 V @ 9 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 75 ns
- Current - Reverse Leakage @ Vr:
- 50 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDB09E60ATMA1 FAQ
1.How can I place an order for IDB09E60ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDB09E60ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDB09E60ATMA1 reliable?
The price and inventory of IDB09E60ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDB09E60ATMA1 is usually 5 days.
3.What payment methods are accepted for IDB09E60ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDB09E60ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDB09E60ATMA1?
IDB09E60ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDB09E60ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDB09E60ATMA1?
For technical support, including IDB09E60ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDB09E60ATMA1 requirements.
6.How does Aetrix verify that IDB09E60ATMA1 is sourced from the original manufacturer or authorized distributors?
All IDB09E60ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDB09E60ATMA1 meets industry standards.
7.What is the process for return or replacement of IDB09E60ATMA1?
All IDB09E60ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDB09E60ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDB09E60ATMA1 part is unused and in its original packaging.
Return procedure for IDB09E60ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDB09E60ATMA1 Tags
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