Infineon Technologies IDB18E120ATMA1

Overview

IDB18E120 from Infineon Technologies is a 1200 V, 18 A fast-switching emitter-controlled diode (ECD) optimized for high-efficiency soft-switching in industrial and renewable energy inverters. It delivers 1.65 V forward voltage at 18 A/25 °C, 195 ns reverse recovery time at 25 °C, and low 1880 nC reverse recovery charge - enabling reduced switching losses in three-phase motor drives and solar string inverters.

For engineers reviewing the IDB18E120 datasheet, IDB18E120 pinout, IDB18E120 application, or IDB18E120 equivalent, key selection criteria include its ECD topology for controlled turn-off behavior, softness factor (S = 5.5 at 25 °C), thermal resistance (RthJC = 1.1 K/W), and PG-TO263-3-2 package compatibility with high-power gate driver layouts.

Technical Context

The IDB18E120 implements Infineon's proprietary emitter-controlled diode architecture, eliminating minority-carrier tail current via integrated control electrode - resulting in inherently soft, low-noise turn-off without external snubbers. Its dynamic performance is characterized across temperature (trr up to 300 ns at 150 °C) and di/dt (up to 800 A/µs).

Thermal design is enabled by a low RthJC of 1.1 K/W and defined derating curves: continuous forward current drops from 31 A at TC = 25 °C to 19.8 A at TC = 90 °C, while power dissipation falls from 113 W to 54 W over the same range - supporting conduction loss management in forced-air or heatsink-cooled systems.

Key Specifications

Pinout & Package

Package: PG-TO263-3-2 - surface-mount, isolated tab, thermally enhanced variant of TO-263 with 3 terminals and internal isolation between collector and case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage fast-recovery diode applications.

Compared with IDW18E120, IDB18E120 trades 0.2 K/W higher RthJC for SMT manufacturability and footprint reduction; compared with STTH1612D, it delivers superior softness and lower Qrr at the expense of slightly higher VF - making it optimal for high-efficiency, high-frequency industrial inverters.

Availability

IDB18E120 is available at Aetrix Electronics and suitable for industrial motor drives, solar string inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant SMT packaging.

Supply support for IDB18E120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDB18E120 belongs to Infineon's Emitter Controlled Diode (ECD) product line, engineered specifically to replace conventional ultrafast diodes in high-efficiency, high-voltage inverter topologies where soft switching and low EMI are mandatory.

FAQ

What is the maximum junction temperature and how does it affect derating?

The IDB18E120 has a maximum junction temperature (Tjmax) of 150 °C. At this limit, its continuous forward current (IF) is rated at 18 A. Derating begins above TC = 25 °C: IF drops linearly to 19.8 A at TC = 90 °C and further to 18 A at TC = 100 °C per the datasheet curve. Thermal design must ensure RthJC × Pdiss + TC ≤ 150 °C.

Is Pin 1 truly unused, and what happens if it's connected?

Yes, Pin 1 is explicitly designated as "NC" (No Connection) in the official Infineon datasheet and internal die layout. Connecting it risks introducing parasitic capacitance or unintended current paths that may degrade soft recovery behavior or cause localized heating. It must remain electrically floating and un-soldered in PCB layout.

How does the ECD architecture differ from a standard ultrafast diode?

Unlike standard ultrafast diodes relying on lifetime control for fast recovery, the IDB18E120 uses an integrated control electrode to actively extract minority carriers during turn-off - eliminating tail current entirely. This yields deterministic softness (S ≥ 5.5), lower Qrr, and immunity to temperature-induced recovery variation, unlike diffusion-controlled devices.

Can IDB18E120 be paralleled, and what layout considerations apply?

Yes - the ECD architecture and matched VF characteristics enable straightforward paralleling. Key requirements include symmetrical PCB trace lengths (<1 mm mismatch), identical thermal vias under each device tab, and shared heatsink contact pressure. Layout must avoid ground loops between multiple devices' anode connections to prevent current imbalance.